M. Aumer

发表

Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures

S. Bedair, M. Aumer, S. LeBoeuf, 2000 .

In situ chemical sensing in AlGaN∕GaN metal organic chemical vapor deposition process for precision film thickness metrology and real-time advanced process control

G. Rubloff, M. Aumer, D. Partlow, 2005 .

Realization of InAlN/GaN Unstrained HEMTs on SiC Substrates with a 75 Å Barrier Layer J. K. Gillespie, G. H. Jessen, G. D. Via, A. Crespo, and D. Langley Sensors Directorate, Air Force Research Laboratory Wright-Patterson Air Force Base, OH 45433

H. G. Henry, M. Aumer, D. Partlow, 2007 .

Validating gallium nitride growth kinetics using a precursor delivery showerhead as a novel chemical reactor

G. Rubloff, R. Adomaitis, M. Aumer, 2006 .

Self-assembled AlInGaN quaternary superlattice structures

N. El-Masry, J. Roberts, S. Bedair, 2001 .

Growth and Characterization of AllnGaN/InGaN Heterostructures

F. G. McIntosh, N. El-Masry, J. Roberts, 1996 .

PVT Growth at High Temperature: Wide Bandgap Semiconductors

D. Kahler, D. Knuteson, A. Berghmans, 2006 .

In situ chemical sensing in AlGaN/GaN high electron mobility transistor metalorganic chemical vapor deposition process for real-time prediction of product crystal quality and advanced process control

G. Rubloff, R. Adomaitis, M. Aumer, 2005 .

Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system

F. G. McIntosh, N. El-Masry, J. Roberts, 1997 .

Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire

F. G. McIntosh, N. El-Masry, J. Roberts, 1996 .

A Model for Indium Incorporation in the Growth of InGaN Films

F. G. McIntosh, N. El-Masry, J. Roberts, 1996 .

Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures

Salah M. Bedair, Baxter Moody, K. B. Nam, 2002 .

Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells

S. Bedair, M. Aumer, S. LeBoeuf, 2001 .

RF Power Measurements of InAlN/GaN Unstrained HEMTs on SiC Substrates at 10 GHz

A. Crespo, H. G. Henry, D. Langley, 2007, IEEE Electron Device Letters.

High optical quality AlInGaN by metalorganic chemical vapor deposition

Salah M. Bedair, F. G. McIntosh, S. F. LeBoeuf, 1999 .

Earbud-based sensor for the assessment of energy expenditure, HR, and VO2max.

Steven Francis Leboeuf, Michael E Aumer, William E Kraus, 2014, Medicine and science in sports and exercise.

Real-time material quality prediction, fault detection, and contamination control in AlGaN/GaN high electron mobility transistor metalorganic chemical vapor deposition process using in situ chemical sensing

G. Rubloff, M. Aumer, D. Partlow, 2005 .

Effect of H2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1-yNy (0≤y≤0.08)

N. El-Masry, J. Roberts, S. Bedair, 2002 .

Exploring the effects of tensile and compressive strain on two-dimensional electron gas properties within InGaN quantum wells

S. Bedair, M. Aumer, S. LeBoeuf, 2000 .

Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1−xN (0≤x≤0.13)

M. J. Reed, C. A. Parker, S. Bedair, 2002 .