J. Lin

发表

Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures

S. Bedair, M. Aumer, S. LeBoeuf, 2000 .

Effects of electron mass anisotropy on Hall factors in 6H‐SiC

J. Lin, Hongxing Jiang, Guang-de Chen, 1996 .

Effect of silver nitrate concentration of silver nanowires synthesized using a polyol method and their application as transparent conductive films

J. Lin, Yu-Lee Hsueh, Jung-Jie Huang, 2015 .

Persistent photoconductivity in a two-dimensional electron gas system formed by an AlGaN/GaN heterostructure

M. Khan, J. Lin, Hongxing Jiang, 1997 .

Effect of nickel coating and inhibitors on hydrogen permeation in steel

C. L. Chen, J. Lin, Jiann-Kuo Wu, 1993 .

Two-dimensional electron gas in AlGaN/GaN heterostructures

Hongxing Jiang, M. Khan, J. Lin, 1997 .

Dynamics of Hydrides on Hydrogen-Terminated Silicon (111)−(1×1) Surface

J. Lin, T. Bok, J. S. Pan, 1999 .

Optical and electrical properties of Mg-doped p-type AlxGa1−xN

Mim Lal Nakarmi, Tom Oder, Hongxing Jiang, 2002 .

Electrical and optical properties of Mg-doped Al0.7Ga0.3N alloys

Mim Lal Nakarmi, Zhaoyang Fan, Hongxing Jiang, 2005 .

The origins of leaky characteristics of Schottky diodes on p-GaN

J. Lin, Hongxing Jiang, D. Qiao, 2003 .

Electrical transport properties of Si-doped hexagonal boron nitride epilayers

J. Lin, Hongxing Jiang, J. Li, 2013 .

Formation and dissolution of microcrystalline graphite in carbon-implanted GaN

Z. J. Yang, S. T. Wang, J. Lin, 2000 .

Evidence for bistable defects in 6H-SiC

J. Lin, Hongxing Jiang, Jingyu Lin, 1994 .

Growth and deep ultraviolet picosecond time-resolved photoluminescence studies of AlN/GaN multiple quantum wells

K. H. Kim, J. Lin, Hongxing Jiang, 2001 .

Optical Properties of Mg-GaN, GaN/AlGaN SCH structures, and GaN on ZnO Substrates

D. C. Reynolds, H. Morkoç, A. Salvador, 1995 .

Hexagonal boron nitride and 6H-SiC heterostructures

J. Lin, Hongxing Jiang, J. Li, 2013 .

Epitaxial growth and demonstration of hexagonal BN/AlGaN p-n junctions for deep ultraviolet photonics

Rajendra Dahal, Hongxing Jiang, S. Majety, 2012 .

Time-resolved electroluminescence studies of III-nitride ultraviolet photonic-crystal light-emitting diodes

Hongxing Jiang, J. Shakya, J. Lin, 2004 .

Observation of optical gain in Er-Doped GaN epilayers

J. Lin, N. Vinh, Y. Wang, 2020, Journal of Luminescence.

III-Nitride Photonic Crystal LEDs for Lighting Applications

J. Lin, T. Oder, H. Jiang, 2014 .

Piezoelectric effects on the optical properties of GaN/AlxGa1−xN multiple quantum wells

H. Morkoç, J. Lin, Hongxing Jiang, 1998 .

A low-temperature specific heat study of giant dielectric constant materials

H. D. Yang, C. P. Sun, J. Lin, 2007, 0712.0129.

Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition

S. Pearton, J. Lin, Hongxing Jiang, 2007 .

Ultraviolet photoluminescence from Gd-implanted AlN epilayers

S. Pearton, G. Thaler, J. Lin, 2006 .

Using double layer CoSi2 nanocrystals to improve the memory effects of nonvolatile memory devices

S. Sze, J. Lin, Ting‐Chang Chang, 2007 .

Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes

Michael S. Shur, Christian Kisielowski, M. Asif Khan, 1997 .

Chapter 6 – Persistent photoconductivity in III-nitrides

J. Lin, H. Jiang, 2000 .

First-order phase transition in the ternary sulfide NiV2S4

J. Lin, Y. Kuo, K. Sivakumar, 2007 .

Growth and optical studies of two-dimensional electron gas of Al-rich AlGaN/GaN heterostructures

J. Lin, Hongxing Jiang, M. Nakarmi, 2002 .

Propagation properties of light in AlGaN/GaN quantum-well waveguides

J. Lin, Hongxing Jiang, T. Oder, 2001 .

Anisotropic Photoexcited Carrier Dynamics in (100)-, (001)-, and (110)-Oriented YBCO Films by Polarized Ultrafast Optical Spectroscopy

J. Lin, C. Luo, K. Wu, 2003 .

Dynamics of bound-exciton energy transformation to edge-luminescence centers in CdS

J. Lin, Hongxing Jiang, D. Baum, 1990 .

Excitation mechanisms of Er optical centers in GaN epilayers

J. Lin, J. Zavada, N. Vinh, 2015, 1507.05119.

Effects of alloy disorder on the transport properties of AlxGa1−xN epilayers probed by persistent photoconductivity

J. Lin, Hongxing Jiang, K. Zeng, 2000 .

Persistent photoconductivity in Ga1−xInxNyAs1−y

S. Kurtz, J. Lin, Hongxing Jiang, 1999 .

Fe2O3nanowires for thermoelectric nitrogen dioxide gas sensor

J. Lin, S. Huang, A. J. Zhang, 2018, AIP Advances.

Persistent photoconductivity in II‐VI and III‐V semiconductor alloys and a novel infrared detector

J. Lin, Hongxing Jiang, Jingyu Lin, 1991 .

Optical transitions in Pr-implanted GaN

R. Dupuis, J. Lin, Hongxing Jiang, 1999 .

Fabrication and optical studies of AlGaN/GaN quantum-well waveguides

J. Lin, Hongxing Jiang, T. Oder, 2001 .

Mode spacing ``anomaly'' in InGaN blue lasers

J. Lin, Hongxing Jiang, 1999 .

Thermoelectric Properties of In_x_Ga_1-x_N Alloys

J. Lin, Hongxing Jiang, R. Dahal, 2008 .

Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates

Z. Mi, J. Lin, Hongxing Jiang, 2014 .

Polarization-resolved Er emission in Er doped GaN bulk crystals

J. Lin, T. Smith, J. Li, 2020 .

A conductive AFM study of carbon-rich hexagonal (BN)C semiconductor alloys

J. Lin, J. Li, H. Jiang, 2022, MRS Communications.

Anisotropic index of refraction and structural properties of hexagonal boron nitride epilayers probed by spectroscopic ellipsometry

J. Lin, J. Li, H. Jiang, 2020 .

Probing the surface oxidation process in hexagonal boron nitride epilayers

J. Lin, J. Li, H. Jiang, 2020 .

Lateral charge carrier transport properties of B-10 enriched hexagonal BN thick epilayers

J. Lin, J. Li, H. Jiang, 2019, Applied Physics Letters.

Critical thickness of hexagonal GaBN/BN heterostructures

J. Lin, J. Li, H. Jiang, 2019, Journal of Applied Physics.

Charge collection and trapping mechanisms in hexagonal boron nitride epilayers

J. Lin, J. Li, H. Jiang, 2021, Applied Physics Letters.

Charge collection in h-BN neutron detectors at elevated temperatures

J. Lin, J. Li, H. Jiang, 2021, Applied Physics Letters.

Effects of surface recombination on the charge collection in h-BN neutron detectors

J. Lin, J. Li, H. Jiang, 2019, Journal of Applied Physics.

Hexagonal boron nitride neutron detectors with high detection efficiencies

J. Lin, Hongxing Jiang, Jingyu Lin, 2018 .

First-order phase transition in the ternary sulfide NiV2S4

J. Lin, Y. Kuo, K. Sivakumar, 2007 .

Enhanced magnetization in erbium doped GaN thin films due to strain induced electric fields

J. Lin, Hongxing Jiang, J. Zavada, 2011 .

AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors (MOSHFETs) with the Delta-Doped Barrier Layer

J. Lin, Hongxing Jiang, J. Bardwell, 2002 .

Erbium-Doped GaN Optical Amplifiers Operating at 1.54 Micrometers

J. Lin, Hongxing Jiang, J. Zavada, 2009 .

Unique nanostructures in NiCo alloy nanowires

L. H. Van, J. Ding, J. Lin, 2009 .

Exciton-phonon interaction in InGaN/GaN and GaN/AlGaN multiple quantum wells

Hadis Morkoç, Andrei Botchkarev, Hongxing Jiang, 1997 .

Optical transitions in GaN/AlxGa1−xN multiple quantum wells grown by molecular beam epitaxy

H. Morkoç, A. Salvador, M. Smith, 1996 .

Steady‐state temperature profiles in thermally thin substrates induced by arbitrarily shaped laser beams

J. Lin, S. Allen, K. Imen, 1989 .

Temperature dependence of the energy bandgap of two-dimensional hexagonal boron nitride probed by excitonic photoluminescence

J. Lin, Hongxing Jiang, J. Edgar, 2014 .

Phase separation and persistent magnetic memory effect in La0.625Ca0.375MnO3 and La0.375Pr0.25Ca0.375MnO3 films

J. Lin, C. Hsieh, C. Luo, 2009 .

Metallic percolation in La0.67Ca0.33MnO3 thin films

J. Lin, Shu-hsia Chen, J. Juang, 2003 .

Colossal electroresistance and colossal magnetoresistance in spinel multiferroic CdCr2S4

H. D. Yang, C. P. Sun, J. Lin, 2010, 1003.0960.

Precession of Kepler’s orbit

J. Lin, Hongxing Jiang, 1985 .

Synthesis, characterizations, and field emission studies of crystalline Na2V6O16 nanobelt paper

C. Sow, J. Lin, Yanwu Zhu, 2006 .

200nm deep ultraviolet photodetectors based on AlN

J. Lin, Hongxing Jiang, Zhaoyang Fan, 2006 .

Cluster size and composition variations in yellow and red light-emitting InGaN thin films upon thermal annealing

K. H. Kim, J. Lin, Hongxing Jiang, 2004 .

Effects of rapid thermal annealing on the structural properties of TiO2 nanotubes

J. Lin, Y. Chou, M. Yang, 2011 .

The influence of lanthanum doping position in ultra-thin HfO2 films for high-k gate dielectrics

J. Lin, P. Juan, Chuan-Hsi Liu, 2010 .

The incorporation of Nickel and Phosphorus dopants into Boron-Carbon alloy thin films

J. Lin, D. Mcilroy, P. Dowben, 1998 .

Improvements on Electrical Properties of Ultra-Thin Silicon Oxides Grown by Microwave Afterglow Oxygen Plasma

H. Hwang, J. Lin, P. C. Chen, 1994 .

Room temperature intrinsic optical transition in GaN epilayers: The band-to-band versus excitonic transitions

M. Khan, M. Smith, J. Lin, 1997 .

Direct hydrogen gas generation by using InGaN epilayers as working electrodes

J. Lin, J. Li, H. Jiang, 2008 .

Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44–360nm: Photoemission assessments

U. Kroth, M. Richter, J. Lin, 2008 .

Compositional changes in erbium-implanted GaN films due to annealing

J. Lin, J. Zavada, R. Wilson, 2003 .

Diameter effect of silver nanowire doped in activated carbon as thin film electrode for high performance supercapacitor

J. Lin, Yu-Lee Hsueh, Jung-Jie Huang, 2017, Applied Surface Science.

Anomalous magnetic ordering in b-axis-oriented orthorhombic HoMnO3 thin films

C. Hsu, J. Lin, C. Hsieh, 2008 .

Three‐step growth method for high quality AlN epilayers

J. Lin, B. Cai, M. Nakarmi, 2012 .

Growth and optical properties of a‐plane AlN and Al rich AlN/AlxGa1–xN quantum wells grown on r‐plane sapphire substrates

J. Lin, Hongxing Jiang, T. Tahtamouni, 2008 .

Metal-insulator transition in semiconductor alloys probed by persistent photoconducfivity

M. Smith, J. Lin, H. Jiang, 2011 .

Temperature dependence of the energy bandgap of multi-layer hexagonal boron nitride

J. Lin, Hongxing Jiang, Jingyu Lin, 2017 .

Effective mass of two-dimensional electron gas in an Al0.2Ga0.8N/GaN heterojunction

J. Lin, Hongxing Jiang, Y. H. Chang, 2001 .

Transport Properties of a Quasi-1D Wigner Solid on Liquid Helium Confined in a Microchannel with Periodic Potential

J. Lin, D. Konstantinov, J. Lin, 2018, Journal of Low Temperature Physics.

Magnetic field dependence of low-temperature specific heat of the spinel oxide superconductor LiTi2O4

H. D. Yang, C. P. Sun, J. Lin, 2004, cond-mat/0407695.

Collective effects of interface roughness and alloy disorder in InxGa1−xN/GaN multiple quantum wells

M. Smith, J. Lin, Hongxing Jiang, 1998 .

Well Thickness And Doping Effects, And Room Temperature emission mechanisms in InGaN/GaN And GaN/AlGaN Multiple Quantum Wells

H. Morkoç, A. Salvador, M. Khan, 1997 .

Comprehensive description of the dynamical screening of the internal electric fields of AlGaN / GaN quantum wells in time-resolved photoluminescence experiments

J. Lin, T. Oder, H. Jiang, 2014 .

Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells

H. Morkoç, A. Salvador, J. Lin, 1997 .

Polarization-dependent x-ray absorption spectroscopy of hexagonal and orthorhombic TbMnO3 thin films

J. M. Chen, C. K. Chen, J. Lin, 2010 .

Properties of Co-, Cr-, or Mn-implanted AlN

R. M. Frazier, S. Pearton, G. Thaler, 2003 .

A novel NO2 gas sensor based on Hall effect operating at room temperature

J. Lin, Wei-yang Xie, X. L. He, 2016, Applied Physics A.

Wide‐Range Tuning of the Mo Oxidation State in La1–xSrxFe2/3Mo1/3O3 Perovskites

J. M. Chen, J. Lin, M. Lobanov, 2016 .

III-nitride micro-emitter arrays: development and applications

Hongxing Jiang, Zhaoyang Fan, Jingyu Lin, 2008 .

Comparative analysis of specific heat of YNi$_{2}$B$_{2}$C using nodal and two-gap models

H. D. Yang, C. P. Sun, J. Lin, 2005, cond-mat/0512291.

Fabrication of n-type nickel doped B5C1+δ homojunction and heterojunction diodes

J. Lin, Hongxing Jiang, D. Mcilroy, 1997 .

Order parameter of MgB(2): a fully gapped superconductor.

H. D. Yang, J. Lin, J. Lin, 2001, Physical review letters.

Stability and local electronic properties ofAl3M(M=Zr,Hf): An NMR study

J. Lin, C. Lue, S. Horng, 2005 .

NMR study of the ternary carbidesM2AlC(M=Ti,V,Cr)

J. Lin, C. Lue, B. Xie, 2006 .

Electronic structure and magnetic anisotropies in orthorhombic multiferroic YMnO3 thin films

J. Lin, C. Hsieh, C. Luo, 2009 .

Thermally stable Schottky contacts on n-type GaN using ZrB 2

Pamela J. Martin, J. Lin, Hongxing Jiang, 2006 .

Metamagnetic behaviour and effect of field cooling on sharp magnetization jumps in multiferroic Y2CoMnO6

H. D. Yang, J. Lin, A. Venimadhav, 2014, 1407.8276.

Thermoelectric properties of quaternary Heusler alloysFe2VAl1−xSix

J. Lin, Y. Kuo, C. Lue, 2007 .

Optical properties of AlN and GaN in elevated temperatures

K. B. Nam, Hongxing Jiang, J. Lin, 2004 .

AIN Epitaxial Layers for UV Photonics

J. Lin, H. Jiang, 2005 .

A study of titanium silicide formation by multiple arsenic-ion-implantation

H. Hwang, J. Lin, Po‐Chun Chen, 1993 .

The unconventional doping in YBa2Cu3O7−x/La0.7Ca0.3MnO3 heterostructures by termination control.

J. M. Chen, J. M. Lee, J. Lee, 2017 .

Pr-induced superconductivity suppression in YxPr1−xBa2Cu4O8 probed by soft-X-ray absorption spectroscopy: a comparative studies of YxPr1−xBa2Cu4O8 and YxPr1−xBa2Cu3O7

J. Lee, J. Lin, Jin-Ming Chen, 2003 .

Structure and superconductivity of Y (Ba1−xRx)2Cu3O7−δ (R=La, Pr, and Nd)

H. D. Yang, J. Lin, H. Tsay, 1996 .

Transport properties of CrO2 (110) films grown on TiO2 buffered Si substrates by chemical vapor deposition

J. Lin, J. Juang, K. Wu, 2002 .

Pressure effects on the transition temperature of superconducting MgCxNi3

H. D. Yang, J. Lin, P. Ho, 2003, cond-mat/0308197.

Direct detection of rare earth ion distributions in gallium nitride and its influence on growth morphology

J. Lin, V. Dierolf, Y. Kawakami, 2020 .

Origin of the significantly enhanced optical transitions in layered boron nitride

J. Lin, Hongxing Jiang, Bing Huang, 2012 .

Optoelectronic properties of hexagonal boron nitride epilayers

J. Y. Lin, H. X. Jiang, X. K. Cao, 2013, Photonics West - Optoelectronic Materials and Devices.

Mercury cadmium tellurium photodetectors fabricated by liquid phase epitaxy and double boron implantation for fiber optic communication

H. Hwang, J. Lin, H. Y. Chen, 1994 .

X-ray diffraction analysis of the defect structure in AlxGa1 − xN films grown by metalorganic chemical vapor deposition

J. J. Lee, J. Lin, T. Kang, 2004 .

Time-resolved photoluminescence studies of AlxGa1−xN alloys

Jun Li, Jun Yu Li, R. A. Mair, 2000 .

Antisite disorder driven spontaneous exchange bias effect in La2−xSrxCoMnO6 (0 ⩽ x ⩽ 1)

H. D. Yang, J. Lin, A. Venimadhav, 2015, Journal of physics. Condensed matter : an Institute of Physics journal.

Metastable Giant Moments in Gd-Implanted GaN, Si, and Sapphire

J. Lin, C. Timm, H. Jiang, 2011, 1103.5322.

Optical properties of Na0.68CoO2 thin film

J. Lin, Hsiang-Lin Liu, W. Chang, 2007 .

GaN-based waveguide devices for long-wavelength optical communications

Rongqing Hui, Hongxing Jiang, Yueting Wan, 2003 .

Fabrication and properties of film-under-gate field emission arrays with SnO2 emitters for flat lamp

J. Lin, T. Guo, Yongfan Zhang, 2010 .

Band structure and ultraviolet optical transitions in ErN

J. Lin, J. Edgar, J. Li, 2021 .

Excitonic luminescence linewidths in AlGaN alloys with high aluminum concentrations

J. Lin, Hongxing Jiang, J. Li, 2002 .

Determination of energy-band offsets between GaN and AlN using excitonic luminescence transition in AlGaN alloys

J. Lin, Hongxing Jiang, R. T. Senger, 2006 .

Development of microLED

Jing Yu Lin, Hongxing Jiang, J. Lin, 2020 .

Photoluminescence studies of band‐edge transitions in GaN epitaxial layers grown by plasma‐assisted molecular beam epitaxy

Hadis Morkoç, Guangde Chen, Hongxing Jiang, 1996 .

Dynamics of a band‐edge transition in GaN grown by molecular beam epitaxy

Hadis Morkoç, Guangde Chen, Andrei Botchkarev, 1995 .

Growth and optical properties of InxAlyGa1−x−yN quaternary alloys

K. B. Nam, Hongxing Jiang, K. H. Kim, 2001 .

III-nitride ultraviolet light-emitting diodes with delta doping

K. H. Kim, Hongxing Jiang, J. Lin, 2003 .

AlGaN∕GaN∕AlN quantum-well field-effect transistors with highly resistive AlN epilayers

J. Lin, Hongxing Jiang, Zhaoyang Fan, 2006 .

Semiconductor superlattices with periodic disorder

J. Lin, Hongxing Jiang, 1988 .

Band structure of superlattice with graded interfaces

J. Lin, Hongxing Jiang, 1987 .

Time-resolved photoluminescence studies of InGaN epilayers

Guangde Chen, M. Asif Khan, Hongxing Jiang, 1996 .

High efficiency hexagonal boron nitride neutron detectors with 1 cm2 detection areas

J. Lin, J. Li, H. Jiang, 2020 .

A novel NO2 gas sensor based on Hall effect operating at room temperature

J. Lin, Wei-yang Xie, X. L. He, 2016 .

Toward achieving cost-effective hexagonal BN semi-bulk crystals and BN neutron detectors via halide vapor phase epitaxy

J. Lin, J. Li, H. Jiang, 2023, Applied Physics Letters.

Boron nitride neutron detector with the ability for detecting both thermal and fast neutrons

J. Lin, J. Li, H. Jiang, 2022, Applied Physics Letters.

High sensitivity hexagonal boron nitride lateral neutron detectors

J. Lin, J. Li, H. Jiang, 2019, Applied Physics Letters.

p-Type AlN nanowires and AlN nanowire light emitting diodes on Si

Z. Mi, J. Lin, I. Shih, 2015, 2015 IEEE Summer Topicals Meeting Series (SUM).

Ferromagnetism in ZnO Nanowires Derived from Electro‐deposition on AAO Template and Subsequent Oxidation

J. Ding, J. Lin, T. Liu, 2008 .

Hexagonal boron nitride for deep ultraviolet photonic devices

Hongxing Jiang, Jingyu Lin, J. Lin, 2014 .

Room-temperature ferromagnetism in carbon-doped ZnO.

L. H. Van, J. Lin, J. Yin, 2007, Physical review letters.

Realizing InGaN monolithic solar-photoelectrochemical cells for artificial photosynthesis

J. Lin, Hongxing Jiang, R. Dahal, 2014 .

THE STRUCTURE AND MAGNETIC PROPERTIES OF METAL AND ALLOY NANOWIRES VIA AAO TEMPLATE

L. H. Van, J. Ding, J. Lin, 2009 .

Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers

Rajendra Dahal, Hongxing Jiang, S. Majety, 2012 .

Unintentionally doped n-type Al0.67Ga0.33N epilayers

Neeraj Nepal, Mim Lal Nakarmi, Hongxing Jiang, 2005 .

Silicon doping dependence of highly conductive n-type Al0.7Ga0.3N

K. H. Kim, J. Lin, Hongxing Jiang, 2004 .

Large-scale growth of ultrathin MgO nanowires and evaluate their field emission properties

J. Lin, T. Guo, Yongai Zhang, 2009 .

Birefringence of GaN/AlGaN optical waveguides

R. Hui, J. Lin, Hongxing Jiang, 2003 .

Effect of nanostructured morphologies of SnO2 on field emission properties

J. Lin, T. Guo, Y. Ye, 2012 .

AlxGa1−xN/GaN band offsets determined by deep-level emission

Yung-Ting Chen, Hongxing Jiang, J. Lin, 2001 .

Recent advances in III-nitride ultraviolet photonic materials and devices

J. Lin, Hongxing Jiang, 2003 .

Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures

Salah M. Bedair, Baxter Moody, K. B. Nam, 2002 .

Photoresponsivity of ultraviolet detectors based on InxAlyGa1−x−yN quaternary alloys

Tom Oder, Hongxing Jiang, J. Lin, 2000 .

Comparative Analysis of Temperature-dependent Raman Spectra of GaN and GaN/Mg Films

J. Lin, H. Jiang, Guangde Chen, 2006 .

Growth of III-nitride photonic structures on large area silicon substrates

Hongxing Jiang, J. Lin, Hongxing Jiang, 2006 .

Ultrafast photoinduced mechanical strain in epitaxial BiFeO3 thin films

Takayoshi Kobayashi, J. Lin, Y. Chu, 2012 .

Thermoelectric properties of InxGa1−xN alloys

Rajendra Dahal, Hongxing Jiang, B. N. Pantha, 2008 .

Nitride micro-LEDs and beyond--a decade progress review.

H X Jiang, J Y Lin, J. Lin, 2013, Optics express.

Full-scale self-emissive blue and green microdisplays based on GaN micro-LED arrays

J. Day, J. Li, D. Y. C. Lie, 2012, OPTO.

Size dependence of III-nitride microdisk light-emitting diode characteristics

Hongxing Jiang, J. Shakya, J. Lin, 2001 .

Comparison of optical transitions in InGaN quantum well structures and microdisks

Hongxing Jiang, Lun Dai, J. Lin, 2001 .

Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys

A. Steckl, J. Lin, Hongxing Jiang, 2009 .

Dramatic enhancement of 1.54 μm emission in Er doped GaN quantum well structures

J. Lin, Hongxing Jiang, J. Li, 2015 .

Growth and fabrication of GaN/Er:GaN/GaN core-cladding planar waveguides

J. Lin, T. Smith, J. Li, 2019, Applied Physics Letters.

Realization of all-crystalline GaN/Er:GaN/GaN core-cladding optical fiber structures

J. Lin, J. Li, H. Jiang, 2022, Applied Physics Letters.

Band structure and infrared optical transitions in ErN

J. Lin, J. Edgar, J. Li, 2020 .

Emission and absorption cross-sections of an Er:GaN waveguide prepared with metal organic chemical vapor deposition

R. Hui, J. Lin, Hongxing Jiang, 2011 .

Carrier lifetime in erbium-doped GaN waveguide emitting in 1540 nm wavelength

R. Hui, J. Lin, Hongxing Jiang, 2010 .

Erbium-doped GaN bulk crystals as a gain medium for eye-safe high energy lasers

H. X. Jiang, Z. Y. Sun, Q. W. Wang, 2018, OPTO.

1.54 μm emitters based on erbium doped InGaN p-i-n junctions

J. Lin, Hongxing Jiang, J. Zavada, 2010 .

Erbium energy levels in GaN grown by hydride vapor phase epitaxy

J. Lin, T. Smith, J. Li, 2020 .

Excitation dynamics of the 1.54μm emission in Er doped GaN synthesized by metal organic chemical vapor deposition

J. Lin, Hongxing Jiang, J. Zavada, 2007 .

Formation energy and optical excitation mechanisms of Er in GaN semi-bulk crystals

J. Lin, J. Li, H. Jiang, 2022, Applied Physics Letters.

Room-Temperature Lasing Action in GaN Quantum Wells in the Infrared 1.5 μm Region

J. Lin, Hongxing Jiang, J. Zavada, 2018, 1802.10456.

Temperature dependence studies of Er optical centers in GaN epilayers grown by MOCVD

J. Lin, Hongxing Jiang, J. Zavada, 2017 .

Photoluminescence quantum efficiency of Er optical centers in GaN epilayers

J. Lin, J. Zavada, N. Vinh, 2016, Scientific Reports.

Optical excitation of Er centers in GaN epilayers grown by MOCVD

John M. Zavada, J. Y. Lin, Matthew Hawkins, 2016, SPIE OPTO.

Photonic properties of erbium doped InGaN alloys grown on Si (001) substrates

J. Lin, Hongxing Jiang, J. Zavada, 2011 .

1.54 μm emitter and optical amplifier based on Er doped InGaN/GaN

R. Dahal, J. Y. Lin, Hongxing Jiang, 2010, OPTO.

Photoluminescence properties of erbium doped InGaN epilayers

J. Lin, Hongxing Jiang, J. Zavada, 2009 .

Current-injected 1.54μm light emitting diodes based on erbium-doped GaN

J. Lin, Hongxing Jiang, J. Zavada, 2008 .

High-efficiency and high-sensitivity thermal neutron detectors based on hexagonal BN epilayers

H. X. Jiang, J. Y. Lin, A. Maity, 2017, Optical Engineering + Applications.

Band-edge transitions in hexagonal boron nitride epilayers

Rajendra Dahal, Hongxing Jiang, S. Majety, 2012 .

Free nucleation of aluminum nitride single crystals in HPBN crucible by sublimation

J. Lin, Hongxing Jiang, M. Dudley, 2005 .

Bulk AlN crystal growth by direct heating of the source using microwaves

J. Lin, Hongxing Jiang, M. Kuball, 2004 .

Effects of the Wave Function Localization in AlInGaN Quaternary Alloys

Su-Huai Wei, Jian-Bai Xia, Hongxing Jiang, 2007 .

Fabrication and field emission characteristics of SnO2 electron sources based on planar-gate-type cathode arrays

J. Lin, Chaoxing Wu, T. Guo, 2010 .

Optical resonance modes in InGaN/GaN multiple-quantum-well microring cavities

Hongxing Jiang, K. C. Zeng, J. Lin, 1999 .

Optical modes within III-nitride multiple quantum well microdisk cavities

K. C. Zeng, Bei-Wei Zhang, R. A. Mair, 1998 .

MOCVD growth of GaBN on 6H-SiC (0001) substrates

J. Lin, J. Edgar, H. Jiang, 2000 .

III-Nitride Quantum Devices—Microphotonics

J. Lin, H. Jiang, 2003 .

Magnetoresistance of La0.7Ca0.3MnO3 thin film biepitaxial step junctions

J. Lin, J. Juang, K. Wu, 2003 .

Anisotropic magnetoresistance of La0.7Ca0.3MnO3 thin film biepitaxial step junctions

J. Lin, C. Hsieh, J. Juang, 2006 .

A hall effect hydrogen-selective gas sensor based on SnO2 nanowires operating at low temperature

J. Lin, A. J. Zhang, X. L. He, 2019, Journal of Materials Science: Materials in Electronics.

Single phase InxGa1−xN(0.25≤x≤0.63) alloys synthesized by metal organic chemical vapor deposition

Hongxing Jiang, B. N. Pantha, J. Lin, 2008 .

Effects of an Ag overlayer on the magnetic properties of ultrathin Co/Cu(111) films

Y. Yao, J. Lin, J. Tsay, 2001 .

Transition metal ion implantation into AlGaN

R. M. Frazier, S. Pearton, G. Thaler, 2003 .

Effects of plasma treatment on the Ohmic characteristics of Ti∕Al∕Ti∕Au contacts to n-AlGaN

Hongxing Jiang, Xian-An Cao, S. LeBoeuf, 2006 .

Well-width dependence of the quantum efficiencies of GaN/AlxGa1−xN multiple quantum wells

J. Lin, Hongxing Jiang, J. Li, 2000 .

Metastability and persistent photoconductivity in Mgdoped ptype

M. Khan, J. Lin, H. Jiang, 2014 .

Stresses experienced by AlN films grown on sapphire

M. Khan, J. Lin, Hongxing Jiang, 2005 .

Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31

Chih-Chung Yang, Kung-Jen Ma, Shih-Wei Feng, 2003 .

Effects of e-beam deposited gate dielectric layers with atmospheric pressure plasma treatment for IGZO thin-film transistors

J. Lin, G. M. Wu, A. Sahoo, 2016 .

Acceptor-bound exciton transition in Mg-doped AlN epilayer

J. Lin, Hongxing Jiang, N. Nepal, 2004 .

Atomic Oxidation of Ultra Thin SiGe Using Afterglow Oxygen Plasma

H. Hwang, J. Lin, P. C. Chen, 1992 .

Thermal neutron detectors based on hexagonal boron nitride epilayers

Jing Li, Hongxing Jiang, J. Y. Lin, 2016, Optical Engineering + Applications.

Nitride microlens arrays for blue and ultraviolet wavelength applications

J. Lin, Hongxing Jiang, J. Shakya, 2003 .

Achieving p-InxGa1-xN alloys with high In contents

J. Y. Lin, Hongxing Jiang, B. N Pantha, 2010, OPTO.

III-nitride nanostructures for energy generation

J. Y. Lin, Hongxing Jiang, B. N. Pantha, 2010, OPTO.

Free excitonic transitions in GaN, grown by metal‐organic chemical‐vapor deposition

M. Khan, J. Lin, Hongxing Jiang, 1996 .

First principles prediction of materials for spintronics: From bulk to nano

J. Lin, J. Yi, L. Shen, 2010, 2010 8th International Vacuum Electron Sources Conference and Nanocarbon.

Delta-doped AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with high breakdown voltages

J. Lin, Hongxing Jiang, Zhaoyang Fan, 2002 .

Structural properties of ZnO grown on GaN/sapphire templates : The transition from nanorods to thin films

J. Lin, S. Chua, H. Pan, 2007 .

Persistent photoconductivity in InxAlyGa1−x−yN quaternary alloys

J. Lin, Hongxing Jiang, Wei-hsin Chen, 2003 .

Semiconducting hexagonal boron nitride for deep ultraviolet photonics

Rajendra Dahal, Hongxing Jiang, Jing Li, 2012, OPTO.

Optical properties of a high-quality insulating GaN epilayer

J. Lin, Hongxing Jiang, Wei Yang, 1999 .

Low‐temperature epitaxial growth and photoluminescence characterization of GaN

J. Lin, Hongxing Jiang, Z. J. Yu, 1994 .

Temperature-Dependent Photoluminescence and Electron Field Emission Properties of AIN Nanotip Arrays

S. Lau, J. Lin, Hongxing Jiang, 2009 .

Near-field optical study of AlGaN/GaN quantum-well waveguide

Hongxing Jiang, J. Shakya, J. Lin, 2004 .

Surfactant effects of gallium on quality of AlN epilayers grown via metal-organic chemical-vapour deposition on SiC substrates

J. Lin, J. Li, H. Jiang, 2012 .

Memory characteristics of Co nanocrystal memory device with HfO

S. M. Sze, S. Sze, J. Lin, 2007 .

Ab initio study of F- and Cl-functionalized single wall carbon nanotubes

J. Lin, H. Pan, Y. Feng, 2006 .

Surface chemical and electronic properties of plasma‐treated n‐type Al0.5Ga0.5N

J. Lin, Hongxing Jiang, X. Cao, 2007 .

Stable field emission from planar-gate electron source with MWNTs by electrophoretic deposition

J. Lin, Chaoxing Wu, T. Guo, 2012 .

Metal-semiconductor-metal neutron detectors based on hexagonal boron nitride epitaxial layers

H. X. Jiang, S. Majety, J. Li, 2012, Optics & Photonics - Optical Engineering + Applications.

AlGaN and InAlGaN alloys : epitaxial growth optical and electrical properties, and applications

Hongxing Jiang, J. Lin, Hongxing Jiang, 2002 .

Delta-doped AlGaN/GaN Heterostructure Field-Effect Transistors with Incorporation of AlN Epilayers

J. Lin, Hongxing Jiang, Zhaoyang Fan, 2003 .

Effects of persistent photoconductivity on the characteristic performance of an AlGaN/GaN heterostructure ultraviolet detector

Hongxing Jiang, M. Khan, J. Lin, 1998 .

Barrier-width dependence of quantum efficiencies of GaN/AlxGa1−xN multiple quantum wells

J. Lin, Hongxing Jiang, J. Li, 2000 .

Fundamental electrical properties of fluorinated and N2O plasma‐annealed ultrathin silicon oxides grown by microwave plasma afterglow oxidation at low temperatures

H. Hwang, J. Lin, P. C. Chen, 1994 .