H. Miki

发表

Increasing threshold voltage variation due to random telegraph noise in FETs as gate lengths scale to 20 nm

D. Frank, W. Haensch, M. Rooks, 2006, 2009 Symposium on VLSI Technology.

Voltage and temperature dependence of random telegraph noise in highly scaled HKMG ETSOI nFETs and its impact on logic delay uncertainty

D. Frank, D. Park, M. Yamaoka, 2012, 2012 Symposium on VLSI Technology (VLSIT).

Impact of threshold voltage fluctuation due to random telegraph noise on scaled-down SRAM

M. Yamaoka, N. Tega, H. Miki, 2008, 2008 IEEE International Reliability Physics Symposium.

Thermodynamical Calculation and Experimental Confirmation of the Density of Hole Traps in SiO2 Films

Kunihiro Asada, Hiroshi Miki, Yuzuru Ohji, 1991 .

Reduction of random telegraph noise in High-к / metal-gate stacks for 22 nm generation FETs

D. Frank, W. Haensch, M. Guillorn, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Impact of HK / MG stacks and future device scaling on RTN

D. Frank, W. Haensch, M. Guillorn, 2011, 2011 International Reliability Physics Symposium.

Anomalously Large Threshold Voltage Fluctuation by Complex Random Telegraph Signal in Floating Gate Flash Memory

A. Kotabe, N. Tega, H. Miki, 2006, 2006 International Electron Devices Meeting.

Understanding short-term BTI behavior through comprehensive observation of gate-voltage dependence of RTN in highly scaled high-κ / metal-gate pFETs

D. Frank, W. Haensch, M. Guillorn, 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

Electrode‐induced degradation of Pb(ZrxTi1−x)O3 (PZT) polarization hysteresis characteristics in Pt/PZT/Pt ferroelectric thin‐film capacitors

Yoshihisa Fujisaki, Hiroshi Miki, Kazuyoshi Torii, 1996 .

H2 DAMAGE OF FERROELECTRIC PB(ZR,TI)O3 THIN-FILM CAPACITORS : THE ROLE OF CATALYTIC AND ADSORPTIVE ACTIVITY OF THE TOP ELECTRODE

Yasuhiro Shimamoto, Yoshihisa Fujisaki, Hiroshi Miki, 1997 .

Quantitative Analysis of Random Telegraph Signals as Fluctuations of Threshold Voltages in Scaled Flash Memory Cells

A. Kotabe, T. Osabe, H. Kurata, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

Degradation-free ferroelectric Pb(Zr, Ti)O3 thin film capacitors with IrO2 top electrode

H. Miki, Y. Fujisaki, K. Kushida-Abdelghafar, 1998 .

The effects of the catalytic nature of capacitor electrodes on the degradation of ferroelectric Pb(Zr,Ti)O3 thin films during reductive ambient annealing

H. Miki, Y. Fujisaki, K. Kushida-Abdelghafar, 1997 .

H. Miki, K. Torii, Y. Fujisaki, 1997 .

Uniform Ultra-Thin Pb(Zr,Ti)O3 Films Formed by Metal-Organic Chemical Vapor Deposition and Their Electrical Characteristics

Y. Ohji, H. Miki, 1994 .

Suppression of Leakage Current of Metal–Insulator–Semiconductor Ta2O5 Capacitors with Al2O3/SiON Buffer Layer

H. Miki, K. Takeda, O. Tonomura, 2011 .

Pt/PbZrxTi1−xO3 interfacial reaction and Schottky barrier formation studied by x-ray photoelectron spectroscopy: Effect of H2 and O2 annealing

H. Miki, K. Torii, K. Kushida-Abdelghafar, 1999 .

1.2-kV SiC Trench-Etched Double-Diffused MOS (TED-MOS)

D. Hisamoto, N. Tega, H. Miki, 2019, Materials Science Forum.

IrO2/Pb(ZrxTi1-x)O3(PZT)/Pt Ferroelectric Thin-Film Capacitors Resistant to Hydrogen-Annealing Damage

H. Miki, K. Kushida-Abdelghafar, Yoshihisa Fujisaki Yoshihisa Fujisaki, 1997 .

Highly reliable MIS capacitors with plasma nitridation and doubled dielectric-constant tantalum pentoxide

H. Miki, R. Furukawa, Y. Shimamoto, 2005, IEEE Transactions on Electron Devices.

Rutile-type TiO2 thin film for high-k gate insulator

Yasuhiro Shimamoto, Hiroshi Miki, Toshihide Nabatame, 2003 .

Effects of Post-Annealing Temperatures and Ambient Atmospheres on the Electrical Properties of Ultrathin (Ba,Sr)TiO3 Capacitors

H. Miki, Y. Fujisaki, Y. Matsui, 1998 .

Properties of ultra-thin lead zirconate titanate thin films prepared by ozone jet reactive evaporation

H. Miki, K. Torii, K. Kushida, 1997 .

Hysteretic drain-current behavior due to random telegraph noise in Scaled-down FETs with high-κ/metal-gate stacks

Yu Zhu, Michael A. Guillorn, Wilfried Haensch, 2010, 2010 International Electron Devices Meeting.

Leakage-current mechanism of a tantalum-pentoxide capacitor on rugged Si with a CVD-TiN plate electrode for high-density DRAMs

Y. Ohji, R. Furukawa, T. Kisu, 1999, 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325).

Accurate screening of defective oxide on SiC using consecutive multiple threshold-voltage measurements

H. Miki, Y. Mori, K. Asaka, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS).

Statistical measurement of random telegraph noise and its impact in scaled-down high-κ/metal-gate MOSFETs

M. Kobayashi, M. Yamaoka, E. Leobandung, 2012, 2012 International Electron Devices Meeting.

Evaluation of gate oxide reliability in 3.3 kV 4H-SiC DMOSFET with J-Ramp TDDB methods

H. Miki, Y. Mori, A. Shima, 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

A 3.3 kV / 800 A Ultra-High Power Density SiC Power Module

H. Miki, R. Yamada, T. Ishigaki, 2018 .

3.3 kV/450 A Full-SiC nHPD2 (next High Power Density Dual) with Smooth Switching

T. Masuda, N. Tega, H. Miki, 2017 .

Strain-imaging observation of the polarization freezing of the domains under the electrode of a Pb(Zr, Ti)O3 film

Yoshihisa Fujisaki, Hiroshi Miki, Kazuyoshi Torii, 1999 .

Ta/sub 2/O/sub 5/ capacitors' dielectric material for giga-bit DRAMs

Y. Kawamoto, H. Miki, K. Torii, 1995, Proceedings of International Electron Devices Meeting.