Y. Qiu

New observations on complex RTN in scaled high-κ/metal-gate MOSFETs — The role of defect coupling under DC/AC condition

Weihai Bu, Hanming Wu, P. Ren, 2013, 2013 IEEE International Electron Devices Meeting.

A novel Si tunnel FET with 36mV/dec subthreshold slope based on junction depleted-modulation through striped gate configuration

Ru Huang, Yangyuan Wang, Y. Qiu, 2012, 2012 International Electron Devices Meeting.

Performance improvement of Si Pocket-Tunnel FET with steep subthreshold slope and high ION/IOFF ratio

Ru Huang, Yangyuan Wang, Y. Qiu, 2012, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology.

Device physics and design of T-gate Schottky barrier tunnel FET with adaptive operation mechanism

Ru Huang, Yangyuan Wang, Y. Qiu, 2014 .

A Comparative Study on the Impacts of Interface Traps on Tunneling FET and MOSFET

Runsheng Wang, Ru Huang, Y. Qiu, 2014, IEEE Transactions on Electron Devices.

Experimental study on the oxide trap coupling effect in metal oxide semiconductor field effect transistors with HfO2 gate dielectrics

P. Ren, Runsheng Wang, Xiaobo Jiang, 2014 .

Study on the Ge1−xSnx/HfO2 interface and its impacts on Ge1−xSnx tunneling transistor

Runsheng Wang, Ru Huang, Y. Qiu, 2014 .

Anticrosstalk characteristics correlated with the set process for α-Fe2O3/Nb–SrTiO3 stack-based resistive switching device

Xiaohui Liu, R. Han, Jinfeng Kang, 2010 .

Self-depleted T-gate Schottky barrier tunneling FET with low average subthreshold slope and high ION/IOFF by gate configuration and barrier modulation

Ru Huang, Yingxin Qiu, Yangyuan Wang, 2011, 2011 International Electron Devices Meeting.