S. Yokogawa

发表

Single-charge-based modeling of transistor characteristics fluctuations based on statistical measurement of RTN amplitude

K. Takeuchi, T. Nagumo, S. Yokogawa, 2006, 2009 Symposium on VLSI Technology.

Statistics of breakdown field and time-dependent dielectric breakdown in contact-to-poly modules

S. Yokogawa, S. Uno, I. Kato, 2011, 2011 International Reliability Physics Symposium.

Direct observation of RTN-induced SRAM failure by accelerated testing and its application to product reliability assessment

K. Takeuchi, T. Nagumo, S. Yokogawa, 2010, 2010 Symposium on VLSI Technology.

Analysis of Al Doping Effects on Resistivity and Electromigration of Copper Interconnects

S. Yokogawa, H. Tsuchiya, Y. Kakuhara, 2008, IEEE Transactions on Device and Materials Reliability.

Liner- and barrier-free NiAl metallization: A perspective from TDDB reliability and interface status

S. Yokogawa, D. Ando, Y. Sutou, 2019 .

Joule heating effects on electromigration in Cu/low-κ interconnects

S. Yokogawa, H. Tsuchiya, Y. Kakuhara, 2009, 2009 IEEE International Reliability Physics Symposium.

Bayesian inference of a lifetime distribution parameter on the time-dependent dielectric breakdown with clustering defects

S. Yokogawa, Kyosuke Kunii, Shun Endo, 2019, Japanese Journal of Applied Physics.

Full-0.56 /spl mu/m pitch copper interconnects for a high performance 0.15-/spl mu/m CMOS logic device

S. Yokogawa, K. Sugai, A. Nishizawa, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

Vth fluctuations due to random telegraph signal on work function control in Hf-doped silicate gate stack

S. Yokogawa, I. Kato, T. Shimizu, 2009, 2009 IEEE International Reliability Physics Symposium.

Statistical characteristics of lifetime distribution based on defect clustering for time-dependent dielectric breakdown in middle- and back-end-of-line

S. Yokogawa, 2015 .

Simulation study for lifetime distribution of middle-of-line time-dependent dielectric breakdown affected by global and local spacing variations

S. Yokogawa, 2016 .

Effects of Al doping on the electromigration performance of damascene Cu interconnects

S. Yokogawa, H. Tsuchiya, 2007 .

Moisture absorption impact on Cu alloy/low-k reliability during process queue time

T. Usami, S. Yokogawa, H. Tsuchiya, 2013 .

Statistical Analysis of Lifetime Distribution of Time-Dependent Dielectric Breakdown in Cu/Low-k Interconnects by Incorporation of Overlay Error Model

S. Yokogawa, H. Tsuchiya, 2010 .

Prediction of early failure due to non-visual defect on time-dependent dielectric breakdown of low-k dielectrics: Experimental verification of a yield-reliability model

S. Yokogawa, H. Tsuchiya, T. Taiji, 2008, 2008 IEEE International Reliability Physics Symposium.

Statistical evaluation method for lifetime distribution in field-accelerated time-dependent dielectric breakdown using two-step probability plot and multilink test scheme

S. Yokogawa, Kazuki Tate, 2018 .

Two-step probability plot for parameter estimation of lifetime distribution affected by defect clustering in time-dependent dielectric breakdown

S. Yokogawa, 2017 .

Role of Impurity Segregation into Cu/Cap Interface and Grain Boundary in Resistivity and Electromigration of Cu/Low-k Interconnects

S. Yokogawa, Y. Kakuhara, 2011 .

Comparison of Lifetime Improvements in Electromigration between Ti Barrier Metal and Chemical Vapor Deposition Co Capping

S. Yokogawa, K. Ueno, Y. Kakuhara, 2010 .

Suppression of Electromigration Early Failure of Cu/Porous Low-k Interconnects Using Dummy Metal

S. Yokogawa, K. Ueno, Y. Kakuhara, 2009 .

Lifetime prediction for stress-induced voiding in nose-shape lines by using a stress-diffusion analytical model

S. Yokogawa, 2014, 2014 IEEE International Reliability Physics Symposium.

Stress relaxation in dual-damascene Cu interconnects to suppress stress-induced voiding

S. Yokogawa, T. Saitoh, K. Ueno, 2003, Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695).

Highly reliable enhanced nitride interface process of barrier low-k using ultra-thin SiN with moisture blocking capability

T. Usami, S. Yokogawa, H. Tsuchiya, 2013 .

Analytical Study of Impurity Doping Effects on Electromigration of CU Interconnects by Employing Comprehensive Scattering Model

S. Yokogawa, H. Tsuchiya, Y. Kakuhara, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

Electromigration Performance of Multi-level Damascene Copper Interconnects

N. Okada, S. Yokogawa, Y. Kakuhara, 2001, Microelectron. Reliab..

Survey of critical failure events in on-chip interconnect by fault tree analysis

S. Yokogawa, Kyousuke Kunii, 2018 .

Applications of lifetime distribution functions with two shape parameters for reliability analysis in advanced interconnect technologies: a brief review

Shinji Yokogawa, S. Yokogawa, 2020, Japanese Journal of Applied Physics.

A Simple Prediction Method for Chip-Level Electromigration Lifetime Using Generalized Gamma Distribution

Shinji Yokogawa, Kyosuke Kunii, S. Yokogawa, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Lifetime prediction model of stress-induced voiding in Cu/low-κ interconnects

S. Yokogawa, 2014 .

Humidity reliability of commercial flash memories for long-term storage

S. Yokogawa, K. Ueno, P. Gomasang, 2020, Japanese Journal of Applied Physics.

Lifetime prediction model of Cu-based metallization against moisture under temperature and humidity accelerations

S. Yokogawa, K. Ueno, P. Gomasang, 2019, Japanese Journal of Applied Physics.

Development of selective Co CVD capping process for reliability improvement of advanced Cu interconnect

S. Yokogawa, M. Sekine, Y. Kakuhara, 2009 .

New analysis methods for comprehensive understanding of Random Telegraph Noise

K. Takeuchi, K. Imai, Y. Hayashi, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

A Novel Resistivity Measurement Technique for Scaled-down Cu Interconnects Implemented to Reliability-focused Automobile Applications

T. Takewaki, N. Kawahara, Y. Kakuhara, 2006, 2006 International Electron Devices Meeting.

Tradeoff Characteristics Between Resistivity and Reliability for Scaled-Down Cu-Based Interconnects

T. Takewaki, N. Kawahara, Y. Kakuhara, 2008, IEEE Transactions on Electron Devices.