K. Imai

Single-charge-based modeling of transistor characteristics fluctuations based on statistical measurement of RTN amplitude

K. Takeuchi, T. Nagumo, S. Yokogawa, 2006, 2009 Symposium on VLSI Technology.

Direct observation of RTN-induced SRAM failure by accelerated testing and its application to product reliability assessment

K. Takeuchi, T. Nagumo, S. Yokogawa, 2010, 2010 Symposium on VLSI Technology.

A 45nm High Performance Bulk Logic Platform Technology (CMOS6) using Ultra High NA(1.07) Immersion Lithography with Hybrid Dual-Damascene Structure and Porous Low-k BEOL

S. Takahashi, S. Yamada, S. Muramatsu, 2006, 2006 International Electron Devices Meeting.

New analysis methods for comprehensive understanding of Random Telegraph Noise

K. Takeuchi, K. Imai, Y. Hayashi, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).