S. Horiguchi

发表

Fabrication technique for Si single-electron transistor operating at room temperature

Yasuo Takahashi, M. Nagase, H. Namatsu, 1995 .

Fabrication of a silicon quantum wire surrounded by silicon dioxide and its transport properties

Yasuo Takahashi, H. Namatsu, K. Kurihara, 1994 .

ELECTRONIC STRUCTURES AND PHONON-LIMITED ELECTRON MOBILITY OF DOUBLE-GATE SILICON-ON-INSULATOR SI INVERSION LAYERS

S. Horiguchi, Masanari Shoji, 1999 .

Phonon-limited inversion layer electron mobility in extremely thin Si layer of silicon-on-insulator metal-oxide-semiconductor field-effect transistor

S. Horiguchi, Masanari Shoji, 1997 .

Ultimately thin double-gate SOI MOSFETs

T. Ouisse, G. Ghibaudo, T. Ernst, 2003 .

Two-dimensional simulation of pattern-dependent oxidation of silicon nanostructures on silicon-on-insulator substrates

Yasuo Takahashi, Kenji Shiraishi, Masao Nagase, 2004 .

Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics

Yasuo Takahashi, S. Horiguchi, H. Inokawa, 2008 .

Fabrication of one-dimensional nanowire structures utilizing crystallographic orientation in silicon and their conductance characteristics

M. Nagase, H. Namatsu, K. Kurihara, 1997 .

Fabrication of Si single-electron transistors with precise dimensions by electron-beam nanolithography

Kenji Yamazaki, Hideo Namatsu, A. Fujiwara, 2003 .

Fabrication of SiO2/Si/SiO2 Double Barrier Diodes using Two-Dimensional Si Structures

Yasuo Takahashi, H. Namatsu, S. Horiguchi, 1997 .

Subband structure and anomalous valley splitting in ultra-thin silicon-on-insulator MOSFET's

T. Ouisse, Yasuo Takahashi, S. Horiguchi, 1998 .

A silicon bi-layer system

Yasuo Takahashi, S. Horiguchi, A. Fujiwara, 2004 .

Quantized conductance of a silicon wire fabricated by separation-by-implanted-oxygen technology

Yasuo Takahashi, H. Namatsu, K. Kurihara, 1995 .

New model of electron free path in multiple layers for Monte Carlo simulation

S. Horiguchi, Toshio Kobayashi, H. Yoshino, 1981 .

Theoretical Investigation of Effective Quantum Dots Induced by Strain in Semiconductor Wires

K. Shiraishi, M. Nagase, S. Horiguchi, 1998 .

Subhalf-micrometer p-channel MOSFET's with 3.5-nm gate Oxide fabricated using X-ray lithography

M. Miyake, T. Kobayashi, S. Horiguchi, 1987, IEEE Electron Device Letters.

Ultimately thin SOI MOSFETs: special characteristics and mechanisms

Sorin Cristoloveanu, Yasuo Takahashi, T. Ernst, 1999, 1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345).

Validity of effective mass theory for energy levels in Si quantum wires

S. Horiguchi, Seiji Horiguchi, 1996 .

Co-tunneling current in very small Si single-electron transistors

Yasuo Takahashi, S. Horiguchi, K. Murase, 1996 .

Quantum-mechanical effects on the threshold voltage of ultrathin-SOI nMOSFETs

S. Horiguchi, Y. Omura, S. Horiguchi, 1993, IEEE Electron Device Letters.

Evaluation of interface potential barrier heights between ultrathin silicon oxides and silicon

Hideo Yoshino, S. Horiguchi, Seiji Horiguchi, 1985 .

Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation

Yasuo Takahashi, Kenji Shiraishi, Masao Nagase, 2001 .