J. Lee

发表

Resonant tunneling through a double GaAs/AlAs superlattice barrier, single quantum well heterostructure

M. Reed, J. Lee, H. Tsai, 1986 .

Microstructure fabrication and transport through quantum dots

M. Reed, J. Lee, J. Randall, 1988 .

Electron cyclotron resonance plasma etching of oxides and SrS and ZnS-based electroluminescent materials for flat panel displays

S. Pearton, P. Holloway, A. Davydov, 1998 .

Comparison of plasma chemistries for dry etching thin film electroluminescent display materials

S. Pearton, P. Holloway, J. Lee, 1998 .

ETCH CHARACTERISTICS OF GAN USING INDUCTIVELY COUPLED CL2/AR AND CL2/BCL3 PLASMAS

J. Lee, G. Yeom, H. S. Kim, 1998 .

Spatial quantization in GaAs–AlGaAs multiple quantum dots

M. Reed, J. Lee, W. Frensley, 1986 .

Comparison of dry etching of AlGaAs and InGaP in a planar inductively coupled BCl3 plasma

S. Pearton, J. Lee, W. Lim, 2003 .

Inductively coupled plasma etching of III–V semiconductors in BCl3-based chemistries: II. InP, InGaAs, InGaAsP, InAs and AlInAs

S. J. Pearton, W. S. Hobson, C. R. Abernathy, 1999 .

Magnetized inductively coupled plasma etching of GaN in Cl2/BCl3 plasmas

Y. J. Sung, J. Lee, G. Yeom, 2000 .

Oxygen diffusion into SiO2-capped GaN during annealing

S. J. Pearton, Hyun Cho, R. G. Wilson, 1999 .

Dry etch damage in InN, InGaN, and InAlN

R. J. Shul, Stephen J. Pearton, C. R. Abernathy, 1995 .

Hydrogen passivation of Ca acceptors in GaN

J. Zolper, S. Pearton, J. Lee, 1996 .

Etching of InP at ≳1 μm/min in Cl2/Ar plasma chemistries

S. J. Pearton, S. Pearton, J. Lee, 1996 .

Unintentional hydrogenation of GaN and related alloys during processing

F. Ren, S. Pearton, J. Lee, 1996 .

Wet chemical etching of AlN and InAlN in KOH solutions

John C. Zolper, R. J. Shul, Stephen J. Pearton, 1996 .

Etching processes for fabrication of GaN/InGaN/AlN microdisk laser structures

J. Zolper, S. Pearton, J. Lee, 1996 .

Cl2/Ar and CH4/H2/Ar dry etching of III–V nitrides

S. Pearton, J. Lee, C. Abernathy, 1996 .

HIGH-DENSITY PLASMA ETCHING OF COMPOUND SEMICONDUCTORS

R. J. Shul, Stephen J. Pearton, C. R. Abernathy, 1997 .

Plasma etching of III-nitrides in ICl/Ar and IBr/Ar plasmas

S. Pearton, J. Lee, C. Abernathy, 1997 .

Electron cyclotron resonance etching of III-V nitrides in IBr/Ar plasmas

S. Pearton, J. Lee, C. Abernathy, 1997 .

Inductively coupled plasma etching of III-V nitrides in CH{sub 4}/H{sub 2}/Ar and CH{sub 4}/H{sub 2}/N{sub 2} chemistries

S. Pearton, J. Lee, C. Abernathy, 1997 .

Comparison of plasma etch techniques for III–V nitrides

G. A. Vawter, R. J. Shul, Stephen J. Pearton, 1998 .

GaN Etching in BCl 3 /Cl 2 Plasmas

C. G. Willison, S. Pearton, J. Lee, 1998 .

Selective inductively coupled plasma etching of group-III nitrides in Cl2- and BCl3-based plasmas

Luke F. Lester, R. J. Shul, Stephen J. Pearton, 1998 .

Dry etching of GaN and related materials: comparison of techniques

G. A. Vawter, R. J. Shul, Stephen J. Pearton, 1998 .

Plasma etching of III–V semiconductors in BCl3 chemistries: Part I: GaAs and related compounds

S. J. Pearton, W. S. Hobson, C. R. Abernathy, 1997 .

Transparent Thin Film Transistors Based on InZnO for Flexible Electronics

Yu-Lin Wang, F. Ren, S. Pearton, 2008 .

Effect of Ar addition in ECR CH4/H2/Ar plasma etching of GaAs, InP and InGaP

W. S. Hobson, F. Ren, S. Pearton, 1996 .

Temperature dependence of ballistic mobility in a metamorphic InGaAs/InAlAs high electron mobility transistor

J. Lee, Jong Min Kim, Y. Jo, 2014 .

Dry etch damage in inductively coupled plasma exposed GaAs/AlGaAs heterojunction bipolar transistors

F. Ren, S. Pearton, J. Lee, 1997 .

Dry etching of GaSb and InSb in

S. Pearton, J. Lee, E. Lambers, 1997 .

Reactive Ion Beam Etching of GaAs and Related Compounds in an Inductively Coupled Plasma of Cl(2)-Ar Mixture

G. A. Vawter, S. Pearton, J. Lee, 1999 .

Photoluminescence and x‐ray properties of heteroepitaxial gallium arsenide on silicon

J. Lee, R. Matyi, H. Y. Liu, 1986 .

High-density plasma etch selectivity for the III–V nitrides

C. G. Willison, S. Pearton, J. Lee, 1998 .

Comparison of H+ and He+ implant isolation of GaAs‐based heterojunction bipolar transistors

F. Ren, S. Pearton, J. Lee, 1995 .

Damage to III–V devices during electron cyclotron resonance chemical vapor deposition

F. Ren, S. Pearton, J. Lee, 1999 .

Temperature-dependent Cl2/Ar plasma etching of bulk single-crystal ZnO

Eun Seong Lee, S. Pearton, D. Norton, 2003 .

Progress in the co-evaporation technologies developed for high performance REBa 2 Cu 3 O 7-δ films and coated conductors

J. Lee, S. Yoo, 2012 .

Anisotropic magnetic properties of Zn1–xCoxO thin films grown by pulsed laser deposition

J. Lee, S. Yamada, K. Takita, 2006 .

Anisotropy of magnetization and magnetoresistance of (Zn,Co)O films grown by pulsed laser deposition

H. Akinaga, J. Lee, F. Takano, 2006 .

Polarity control of ZnO films on (0001) Al2O3 by Cr-compound intermediate layers

J. Lee, S. Park, T. Hanada, 2007 .

Structural and optical investigations of periodically polarity inverted ZnO heterostructures on (0001) Al2O3

J. Lee, S. Park, T. Goto, 2009 .

Unconventional exchange bias in oxide-coated manganese nanoparticles

J. Lee, Zhidong Zhang, E. Brück, 2005 .

New cubic Cd1−xMnxS epilayers grown on GaAs (100) substrates by hot-wall epitaxy

J. Lee, T. Kang, D-J. Kim, 2010 .

Ultrafast and low temperature laser annealing for crystalline TiO2 nanostructures patterned by electro-hydrodynamic lithography

J. Lee, D. Kang, Jong Min Kim, 2013 .

High efficiency GaN-based light-emitting diodes fabricated on dielectric mask-embedded structures

R. Dupuis, J. Lee, C. Sone, 2009 .

Electron Cyclotron Resonance Plasma Etching of AlGaN in Cl2/Ar and BCl3/Ar Plasmas

S. Pearton, D. Greve, J. Lee, 1997 .

Microstructural stability of ohmic contacts to InxGa1−xN

F. Ren, S. Pearton, P. Holloway, 1996 .

Pt/Ti/p‐In0.53Ga0.47As low‐resistance nonalloyed ohmic contact formed by rapid thermal processing

R. L. Brown, S. G. Napholtz, J. Lee, 1989 .

Comparison of ICl and IBr for Dry Etching of III-Nitrides

S. Pearton, J. Lee, C. Abernathy, 1996 .

Selective etching of GaAs over Al0.2Ga0.8As semiconductor in pulsed DC BCl3/SF6 plasmas

S. Pearton, J. Lee, D. Park, 2012 .

In-situ monitoring of etch by-products during reactive ion beam etching of GaAs in chlorine/argon

G. A. Vawter, S. Pearton, J. Lee, 1997 .

Comparison of plasma chemistries for inductively coupled plasma etching of InGaAlP alloys

W. S. Hobson, S. Pearton, J. Lee, 1998 .

Advanced study of various characteristics found in RHEED patterns during the growth of InAs quantum dots on GaAs (0 0 1) substrate by molecular beam epitaxy

J. Lee, M. Bichler, G. Abstreiter, 2004 .

Minority‐carrier‐enhanced reactivation of hydrogen‐passivated Mg in GaN

S. Pearton, J. Lee, C. Yuan, 1996 .

Effect of hydrogen on Ca and Mg acceptors in GaN

J. Zolper, S. Pearton, J. Lee, 1996 .

Passivation of dopants in InGaP using ECR hydrogenation

W. S. Hobson, F. Ren, S. Pearton, 1996 .

Damage Introduction in Ingap and Aigaas by Electron Cyclotron Resonance ar Plasmas

W. S. Hobson, F. Ren, S. Pearton, 1996 .

Damage introduction in InGaP by electron cyclotron resonance Ar plasmas

W. S. Hobson, F. Ren, S. Pearton, 1995 .

Initial growth of gallium arsenide on silicon by organometallic vapor phase epitaxy

J. Lee, John C. C. Fan, S. J. Rosner, 1988 .

Diffusion and interdiffusion in Zn-disordered AlAs-GaAs superlattices

J. Lee, W. Laidig, 1984 .

Comparison of planar inductively coupled plasma etching of GaAs in BCl3, BCl3/Ar, and BCl3/Ne

J. Lee, J. Leem, I. Baek, 2004 .

Planar Inductively Coupled BCl3 Plasma Etching of III-V Semiconductors

S. Pearton, J. Lee, W. Lim, 2004 .

Role of inert gas additive on dry etch patterning of InGaP in planar inductively coupled BCl3 plasmas

S. Pearton, J. Lee, W. Lim, 2004 .

Effects of H2 plasma exposure on GaAsAlGaAs heterojunction bipolar transistors

F. Ren, S. Pearton, J. Lee, 1997 .

Dry etching of InGaP and AlInP in CH4/H2/Ar

W. S. Hobson, F. Ren, S. Pearton, 1996 .

Investigation of masking materials for high-ion-density plasma etching of GaAs

S. Pearton, J. Lee, 1996 .

Elastic Stresses in InGaAsP Heterostructures with Alloyed Contact Metallizations

J. Lee, J. Lopata, V. Swaminathan, 1986 .

Deposition of Low-Stress Encapsulants on InP and GaAs

S. Pearton, J. Lee, K. Short, 1986 .

Selective dry etching of InGaP over GaAs in inductively coupled plasmas

C. R. Abernathy, S. Pearton, J. Lee, 2000 .

Dry etching of InGaAlP alloys in Cl2/Ar high ion density plasmas

F. Ren, S. Pearton, J. Lee, 1996 .

Cl2-Based ECR Etching of InGaP, AlInP and AIGaP

F. Ren, S. Pearton, J. Lee, 1996 .

Plasma-induced damage and hydrogenation of AlxGa1−xP

S. Pearton, J. Lee, C. Abernathy, 1996 .

Investigation of wet etching solutions for In0.5Ga0.5P

C. R. Abernathy, F. Ren, J. Lee, 1995 .

Comparison of GaN, InN and AlN powders for susceptor-based rapid annealing of group III nitride materials

J. Zolper, S. Pearton, J. Lee, 1997 .

Deposition of zirconium boride thin films by direct current triode sputtering

J. Lee, W. C. Dautremont-Smith, U. Chakrabarti, 1987 .

Study of stable p-type conductivity in bismuth-doped ZnO films grown by pulsed-laser deposition

J. Lee, J. C. Lee, N. G. Subramaniam, 2011 .

Lattice curvature induced substrate X-ray line broadening in InGaP/GaAs heterostructures

J. Y. Kim, J. Lee, Tai-kyung Kim, 1994 .

Patterning of LiGaO 2 and LiAlO 2 by Wet and Dry Etching

F. Ren, S. Pearton, J. Lee, 1996 .

Disorder of an InxGa1−xAs‐GaAs superlattice by Zn diffusion

S. Bedair, J. Lee, W. Laidig, 1983 .

Device degradation during low temperature ECR-CVD. Part II: GaAs/AlGaAs HBTs

C. R. Abernathy, F. Ren, S. Pearton, 1998 .

Electron cyclotron resonance plasma etching of materials for magneto-resistive random access memory applications

J. Childress, J. Lee, A. T. Hurst, 1997 .

Wet Etching of (0001) GaN/Al2O3 grown by MOVPE

J. Lee, Y. Park, T. I. Kim, 1998 .

Growth of InGaAs/InP quantum well structures by low-pressure metalorganic chemical vapor deposition

J. Lee, G. Livescu, S. Chu, 1992 .

Etch-induced damage in single crystal Si trench etching by planar inductively coupled Cl2/N2 and Cl2/HBr plasmas

Y. J. Lee, J. Lee, J. Lee, 1999 .

Enhancement of heat dissipation in well-faceted {{100}} diamond thin film

J. Lee, W. Yun, H. Park, 1996 .

Chapter 5 – Hydrogen in wide bandgap semiconductors

S. Pearton, J. Lee, 2001 .

Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates

J. Lee, H. Tsai, R. Matyi, 1987 .

AuBe/p‐InGaAsP contact formed by rapid thermal processing

J. Lee, S. Chu, W. C. Dautremont-Smith, 1989 .

Thermal Stability of Ohmic Contacts to n-InxGa1−xN

F. Ren, S. Pearton, P. Holloway, 1995 .

Understanding of etch mechanism and etch depth distribution in inductively coupled plasma etching of GaAs

F. Ren, S. Pearton, J. Lee, 2001 .

Surface Protection during Plasma Hydrogenation for Acceptor Passivation in InP

S. Pearton, J. Lee, H. Luftman, 1989 .

Si, Be, and C ion implantation in GaAs0.93P0.07

J. Zolper, S. Pearton, J. Lee, 1996 .

Substrate orientation and processing effects on GaAs/Si misorientation in GaAs-on-Si grown by MBE

J. Lee, R. Matyi, H. Schaake, 1988 .

Passivation of acceptors in InP resulting from CH4/H2 reactive ion etching

J. Lee, H. Luftman, W. C. Dautremont-Smith, 1989 .

Effects of N2 or Ar plasma exposure on GaAs/AlGaAs heterojunction bipolar transistors

C. R. Abernathy, F. Ren, J. Lee, 2001 .

Hydrogenation and Defect Creation in GaAs-Based Devices During High Density Plasma Processing

F. Ren, S. Pearton, J. Lee, 1998 .

Defect structures at the GaAs/Si interface after annealing

J. Lee, H. Tsai, 1987 .

Self-aligned process for emitter- and base-regrowth GaN HBTs and BJTs

F. Ren, S. Pearton, J. Lee, 2001 .

Comparison of masking materials for high microwave power CH4/H2/Ar etching of III–V semiconductors

S. Pearton, J. Lee, R. V. Crockett, 1996 .

Pt/Ti/p‐InGaAsP nonalloyed ohmic contact formed by rapid thermal processing

R. L. Brown, J. Lee, W. C. Dautremont-Smith, 1989 .

Chapter 10 - The Properties of Hydrogen in GaN and Related Alloys

S. Pearton, J. Lee, 1999 .

Comparison of dry etching of PMMA and polycarbonate in diffusion pump-based O2 capacitively coupled plasma and inductively coupled plasma

S. H. Lee, S. Pearton, J. Lee, 2010 .

Inductively coupled plasma etching of III–V semiconductors in Cl2-based chemistries

F. Ren, J. Lee, C. Abernathy, 1998 .

Optimization of gas flow and etch depth uniformity for plasma etching of large area GaAs wafers

Stephen J. Pearton, Mike Devre, J. W. Lee, 2002 .

Etching of Ga-based III - V semiconductors in inductively coupled Ar and ?-based plasma chemistries

S. Pearton, J. Lee, C. Abernathy, 1997 .

Characteristics of inductively coupled Cl2/BCl3 plasmas during GaN etching

H. S. Kim, Geun Young Yeom, J. Lee, 1999 .

Investigation of quantum well and tunnel barrier growth by resonant tunneling

A. E. Wetsel, M. Reed, J. Lee, 1986 .

Effects of plasma conditions on the etch properties of AlGaN

J. Lee, D. Lee, G. Yeom, 2000 .

A study of lead zirconate titanate etching characteristics using magnetized inductively coupled plasmas

Y. J. Lee, J. Lee, G. Yeom, 2000 .

Continuous (300 K) photopumped laser operation of AlxGa1−xAs‐GaAs quantum well heterostructures grown on strained‐layer GaAs on Si

N. Holonyak, D. Nam, J. Lee, 1987 .

Advanced selective dry etching of GaAs/AlGaAs in high density inductively coupled plasmas

Stephen J. Pearton, D. D. Johnson, Mike Devre, 2000 .

Low Temperature Silicon Nitride and Silicon Dioxide Film Processing by Inductively Coupled Plasma Chemical Vapor Deposition

Stephen J. Pearton, D. D. Johnson, J. W. Lee, 2000 .

Electrical transport properties of a nanorod GaN p-n homojunction grown by molecular-beam epitaxy

Y. S. Park, J. Lee, T. Kang, 2008 .

SiO x Nanowires Produced on Molybdenum-Coated Si Substrates

J. Lee, Jae-Hak Yang, H. W. Kim, 2008 .

Study of ferroelectric and reproducible bistable switching properties in CdMnS thin films for nonvolatile memory applications

J. Lee, T. Kang, J. C. Lee, 2007 .

Development of SiNx and AlNx passivation layers

J. Lee, S-C. N. Cheng, 2000 .

Influences of substrate surface orientation on misfit accommodation in InGaP/GaAs heterostructures

J. Lee, Tai-kyung Kim, M. Oh, 1995 .

Local modification of the thin YBa2Cu3O7−y microstrips by the voltage-biased atomic force microscope tip

J. Lee, Byong-man Kim, J. Sok, 2000 .

Comparison Of Defects In GaAs Epilayers Grown On Si by MBE and OMCVD: As-Grown And After Rapid Thermal Annealing (RTA)

S. Sharan, J. Narayan, J. W. Lee, 1988, Other Conferences.

Enhancement of diamond film uniformity in a biased microwave-plasma-enhanced chemical vapor deposition system

J. W. Lee, J. Lee, W. Yun, 1997 .

Effect of the cyclic growth/etching time ratio on the [lcub]100[rcub]-oriented texture growth of a diamond film

S. H. Kim, I. Han, J. Lee, 1996 .

Chlorine-Based Plasma Etching of GaN

R. D. Briggs, S. Pearton, J. Lee, 1996 .

Embedded‐mirror semiconductor laser

P. J. Caldwell, J. Lee, W. Laidig, 1984 .

Stability of hydrogen in ScAlMgO4

F. Ren, S. Pearton, J. Lee, 1997 .

Size and density estimation of self‐assembled InAs quantum dots on GaAs(001) substrate through the analysis of RHEED patterns

J. Lee, G. Abstreiter, D. Schuh, 2003 .

Development of advanced plasma process with an optical emission spectroscopy-based end-point technique for etching of AlGaAs over GaAs in manufacture of heterojunction bipolar transistors

S. Pearton, J. Lee, M. Jeon, 2002 .

Cl2‐Based Dry Etching of GaAs, AlGaaAs, and GaP

S. Pearton, J. Lee, C. Abernathy, 1996 .

Comparison of dry etch damage in GaAs/AlGaAs heterojunction bipolar transistors exposed to ECR and ICP Ar plasmas

Stephen J. Pearton, J. W. Lee, Randy J. Shul, 1998 .

Comparison of ECR plasma chemistries for etching of InGaP and AlGaP

C. R. Abernathy, J. Lee, J. Hong, 1997 .

Investigation of GaAs Dry Etching in a Planar Inductively Coupled BCl3 Plasma

I. Baek, S. Pearton, J. Lee, 2004 .

Dry etching of GaAs in high pressure, capacitively coupled BCl3∕N2 plasmas

J. K. Kim, S. Pearton, J. Lee, 2009 .

Inductively Coupled Plasma Etching of III-V Semiconductors in BCl(3)-Based Chemistries: Part 1: GaAs, GaN, GaP, GaSb and AlGaAs

S. J. Pearton, R. J. Shul, W. S. Hobson, 1998 .

Effect of ion damage on the electrical and optical behavior of p-type GaAs and InGap

J. Lee, C. Abernathy, K. N. Lee, 1997 .

The Application of a Low Temperature GaN Buffer Layer to Thick GaN Film Growth on ZnO/Si Substrate

J. Lee, S. W. Park, Jae Wook Lee, 1999 .

High selectivity Inductively Coupled Plasma etching of GaAs over InGaP

L. C. Meyer, F. Ren, S. Pearton, 2000 .

Recessed gate GaN field effect transistor

F. Ren, S. Pearton, J. Lee, 1997 .

Effect of BCl3 Dry Etching on InAlN Surface Properties

C. R. Abernathy, F. Ren, S. Pearton, 1996 .

Sputtered AlN encapsulant for high‐temperature annealing of GaN

Albert G. Baca, John C. Zolper, Stephen J. Pearton, 1996 .

Dopant loss of ultrashallow junction by wet chemical cleaning

U. Chung, T. Park, J. Moon, 2006 .

Effect of high density H2 plasmas on InGaP/GaAs and AlGaAs/GaAs HEMTs

R. F. Kopf, J. M. Kuo, S. J. Pearton, 1998 .

Attenuation losses in electron cyclotron resonance plasma etched AlGaAs waveguides

S. Pearton, J. Lee, C. Sullivan, 1995 .

Copper Dry Etching with Cl2 / Ar Plasma Chemistry

F. Ren, S. Pearton, J. Childress, 1998 .

Investigation of crystal structure and optical properties of Cd1−xMnxS epilayers

J. Lee, D. J. Kim, Y. Choi, 2011 .

Development of Low Temperature Silicon Nitride and Silicon Dioxide Films by Inductively-Coupled Plasma Chemical Vapor Deposition

F. Ren, S. Pearton, J. Lee, 1999 .

Formation of dry etched gratings in GaN and InGaN

C. R. Abernathy, P. Sciortino, J. Lee, 1997 .

Patterning of GaN in High-Density Cl 2 - and BCl 3 -Based Plasmas

R. D. Briggs, S. Pearton, M. Ludowise, 1997 .

Etching And Hydrogen Incorporation In ScAlMgO 4

F. Ren, S. Pearton, J. Lee, 1997 .

The incorporation of hydrogen into III-V nitrides during processing

C. R. Abernathy, J. Lee, C. Vartuli, 1996 .

Resonant Tunneling In Double Barrier Heterostructures

Mark A. Reed, Robert T. Bate, J. W. Lee, 1987, Other Conferences.

Role of C, O and H in III-V Nitrides

J. Zolper, S. Pearton, J. Lee, 1995 .

Wet chemical etching of NiFe, NiFeCo AND NiMnSb for magnetic device fabrication

S. Pearton, J. Lee, X. Cao, 1998 .

High Performacne InGaZnO4-based Thin film Transistors Fabricated at Low Temperature

Yu-Lin Wang, F. Ren, S. Pearton, 2008, ECS Transactions.