T. Yoshitomi

发表

A 40 nm gate length n-MOSFET

H. Iwai, C. Fiegna, T. Ohguro, 1995 .

Sub-50 nm gate length n-MOSFETs with 10 nm phosphorus source and drain junctions

C. Fiegna, T. Ohguro, M. Ono, 1993, Proceedings of IEEE International Electron Devices Meeting.

0.18 /spl mu/m low voltage/low power RF CMOS with zero Vth analog MOSFETs made by undoped epitaxial channel technique

T. Morimoto, H. Iwai, E. Morifuji, 1997, International Electron Devices Meeting. IEDM Technical Digest.

1.5 nm direct-tunneling gate oxide Si MOSFET's

H. Iwai, T. Ohguro, M. Ono, 1996 .

Analysis of resistance behavior in Ti- and Ni-salicided polysilicon films

Hiroshi Iwai, Tatsuya Ohguro, Yukihiro Ushiku, 1994 .

Study of the manufacturing feasibility of 1.5-nm direct-tunneling gate oxide MOSFETs: uniformity, reliability, and dopant penetration of the gate oxide

T. Morimoto, H. Iwai, E. Morifuji, 1998 .

Hot-carrier reliability of ultra-thin gate oxide CMOS

T. Morimoto, H. Iwai, E. Morifuji, 2000 .

A study of flicker noise in n- and p-MOSFETs with ultra-thin gate oxide in the direct-tunneling regime

Y. Miyahara, T. Ohguro, H. Kimijima, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

A study of hot-carrier degradation in n- and p-MOSFETs with ultra-thin gate oxides in the direct-tunneling regime

T. Ohguro, E. Morifuji, T. Yoshitomi, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Tunneling gate oxide approach to ultra-high current drive in small geometry MOSFETs

Hiroshi Iwai, Tatsuya Ohguro, Hisayo Sasaki Momose, 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

Influence of high substrate doping concentration on the hot-carrier and other characteristics of small-geometry CMOS transistors down to the 0.1 /spl mu/m generation

H. Iwai, C. Fiegna, T. Ohguro, 1994, Proceedings of 1994 VLSI Technology Symposium.

Thermal Stability of CoSi Film for CMOS Salicide

T. Morimoto, H. Iwai, E. Morifuji, 2000 .

Process induced damage on RFCMOS

T. Ohguro, H. Kimijima, E. Morifuji, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

P-MOSFET's with ultra-shallow solid-phase-diffused drain structure produced by diffusion from BSG gate-sidewall

Y. Akasaka, H. Hara, H. Iwai, 1993 .

High performance MIM capacitor for RF BiCMOS/CMOS LSIs

Hiroshi Iwai, T. Ohguro, H. S. Momose, 1999, Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024).

An 0.18-/spl mu/m CMOS for mixed digital and analog applications with zero-volt-V/sub th/ epitaxial-channel MOSFETs

Hiroshi Iwai, H. Kimijima, Hiroshi Naruse, 1999 .

Undoped epitaxial Si channel n-MOSFET grown by UHV-CVD with preheating

Hiroshi Iwai, H. Kimijima, Tatsuya Ohguro, 1998 .

The influence of oxygen at epitaxial Si/Si substrate interface for 0.1 /spl mu/m epitaxial Si channel N-MOSFETs grown by UHV-CVD

Hiroshi Iwai, Tatsuya Ohguro, Hisayo Sasaki Momose, 1995, 1995 Symposium on VLSI Technology. Digest of Technical Papers.

0.15-/spl mu/m buried-channel p-MOSFETs with ultrathin boron-doped epitaxial Si layer

H. Iwai, N. Sugiyama, T. Ohguro, 1998 .

Cutoff frequency and propagation delay time of 1.5-nm gate oxide CMOS

Hiroshi Iwai, Tatsuya Ohguro, Hisayo Sasaki Momose, 2001 .

Fabrication of sub‐50‐nm gate length n‐metal–oxide–semiconductor field effect transistors and their electrical characteristics

Hiroshi Iwai, Claudio Fiegna, Tatsuya Ohguro, 1995 .

High-frequency AC characteristics of 1.5 nm gate oxide MOSFETs

E. Morifuji, T. Yoshitomi, Y. Katsumata, 1996, International Electron Devices Meeting. Technical Digest.

High efficiency 2 GHz power Si-MOSFET design under low supply voltage down to 1 V

T. Ohguro, E. Morifuji, T. Yoshitomi, 1996, International Electron Devices Meeting. Technical Digest.

A study on hot carrier effects on N-MOSFETs under high substrate impurity concentration

Hiroshi Iwai, C. Fiegna, Tatsuya Ohguro, 1995 .