H. Noge

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Fabrication of 10-Nanometer-scale GaAs Dot Structures by In Situ Selective Gas Etching with Self-Assembled InAs Dots as a Mask

T. Someya, H. Sakaki, T. Suga, 1995 .

Fabrication of interdigitated back-contact silicon heterojunction solar cells on a 53-µm-thick crystalline silicon substrate by using the optimized inkjet printing method for etching mask formation

H. Noge, M. Kondo, Kimihiko Saito, 2017 .

Transport properties of two-dimensional electron gas in AlGaAs/GaAs selectively doped heterojunctions with embedded InAs quantum dots

T. Someya, T. Noda, H. Sakaki, 1995 .

Selective Epitaxy for Ridge and Edge Quantum Wire Structures: Morphology and Purity Issues

H. Sakaki, Y. Ohno, H. Noge, 1995 .

MBE Growth of GaAs on an Exactly (001)-Oriented Si Substrate and Selective Epitaxial Growth for Fabrication of Modulation-Doped Fet's

H. Noge, H. Kano, Hashimoto Masafumi, 1988 .

Flexible bifacial amorphous Si quintuple‐ and sextuple‐junction solar cells for Internet of Things devices

H. Noge, M. Konagai, R. Ishikawa, 2020, Progress in Photovoltaics: Research and Applications.

Light-Emitting Diodes Using Semiconducting Oligothiophenes

H. Sakaki, H. Noge, S. Hotta, 1993 .

Molecular beam epitaxial growth of a GaAs layer free from antiphase domains on an exactly (100)-oriented Si substrate preheated at 1000°C

H. Noge, T. Kato, H. Kano, 1987 .

Illumination intensity dependence of the performance of interdigitated back contact heterojunction silicon solar cells and the effects of front surface field

H. Noge, M. Kondo, Kimihiko Saito, 2017 .

Two-dimensional simulation of interdigitated back contact silicon heterojunction solar cells having overlapped p/i and n/i a-Si:H layers

H. Noge, M. Kondo, T. Kaneko, 2015 .

Formation of Two-Dimensional Electron Gas in N-AlGaAs/GaAs Heterojunctions on (111)B Microfacets Grown by Molecular Beam Epitaxy on a Patterned (001) Substrate

M. Tsuchiya, H. Noge, Yusui Nakamura, 1993 .

Detection of oxygen incorporated in molecular‐beam epitaxy grown GaAs‐on‐AlAs interfaces and AlAs layers by secondary ion mass spectrometry

T. Someya, H. Sakaki, H. Akiyama, 1993 .

Ultraclean etching of GaAs by HCl gas and in situ overgrowth of (Al)GaAs by molecular beam epitaxy

H. Sakaki, H. Noge, Y. Kadoya, 1998 .

Electron beam‐enhanced etching of InAs in Cl2 gas and novel in situ patterning of GaAs with an InAs mask layer

H. Sakaki, H. Noge, Y. Kadoya, 1993 .

Antiphase domains in GaAs grown on a (001)‐oriented Si substrate by molecular‐beam epitaxy

H. Noge, M. Hashimoto, H. Kano, 1988 .

Structure of pentacene/tetracene superlattices deposited on glass substrate

H. Sakaki, H. Noge, T. Inoshita, 1993 .

Theoretical studies of silicon hetero-junction solar cells with rib structure

H. Noge, M. Konagai, Y. Osawa, 2019, AIP Advances.

Ultrahigh-Vacuum In-Situ Patterning and MBE Overgrowth of GaAs and AlGaAs Using an InAs Mask Laser

H. Sakaki, H. Noge, Y. Kadoya, 1994 .

Nanostructures and Quantum Effects

H. Sakaki, H. Noge, 1994 .

Single electron transport and current quantization in a novel quantum dot structure

Junichi Motohisa, Hiroyuki Sakaki, Leo P. Kouwenhoven, 1994 .

Control of ridge shape for the formation of nanometer-scale GaAs ridge quantum wires by molecular beam epitaxy

H. Sakaki, D. Vvedensky, H. Noge, 1995 .

Formation of GaAs ridge quantum wire structures by molecular beam epitaxy on patterned substrates

Masahiro Tsuchiya, Kazumi Wada, Hidefumi Akiyama, 1994 .

A comparison of deep levels in rapidly thermal-processed GaAs films grown by molecular beam epitaxy on Si and GaAs substrates

H. Noge, A. Usami, A. Kitagawa, 1989 .

Effects of Rapid Thermal Processing on Mbe GaAs on Si

H. Noge, A. Usami, A. Kitagawa, 1989 .

Surface diffusion processes in molecular beam epitaxial growth of GaAs and AlAs as studied on GaAs (001)‐(111)B facet structures

T. Noda, H. Sakaki, M. Tsuchiya, 1994 .

MBE growth of GaAs nanometer-scale ridge quantum wire structures and their structural and optical characterizations

T. Someya, H. Sakaki, H. Akiyama, 1994 .

Formation of N-AlGaAs/GaAs edge quantum wire on (111)B micro facet by MBE and magnetic depopulation of quasi-one-dimensional electron gas

H. Sakaki, M. Tsuchiya, H. Noge, 1994 .

Surface Smoothness and Step Bunching on GaAs (111)B Facets Formed by Molecular Beam Epitaxy

H. Sakaki, H. Noge, Y. Nakamura, 1996 .

Modulation of one‐dimensional electron density in n‐AlGaAs/GaAs edge quantum wire transistor

H. Sakaki, H. Noge, Yusui Nakamura, 1994 .

Fabrication of N-AlGaAs/GaAs Edge Quantum Wires on (118)B Facets with Gate-Electrode and Density Modulation of One-Dimensional Electrons

H. Sakaki, H. Noge, J. Motohisa, 1994 .

Ultrahigh vacuum atomic force microscope study of 10–30 nm scale GaAs ridge structure formation by molecular beam epitaxy

H. Sakaki, H. Noge, Yusui Nakamura, 1997 .

Self-formation of 100 nm scale wire structures during molecular beam epitaxial growth of AlGaAs on patterned substrates

H. Sakaki, H. Noge, Y. Kadoya, 1995 .

MBE Growth of Quantum-Wire Structures on Top of Sharp Riges Using a Mesa-Patterned Substrate

H. Sakaki, H. Akiyama, H. Noge, 1994 .

Formation of high mobility two-dimensional electron gas at etch-regrown AlGaAs/GaAs interface prepared by chlorine gas etching and MBE in an UHV multichamber system

H. Sakaki, H. Noge, Y. Kadoya, 1993 .

Molecular‐beam‐epitaxial growth of n‐AlGaAs on clean Cl2‐gas etched GaAs surfaces and the formation of high mobility two‐dimensional electron gas at the etch‐regrown interfaces

H. Sakaki, H. Noge, Y. Kadoya, 1992 .

Electroluminescence from thin film of a semiconducting oligothiophene deposited in ultrahigh vacuum

H. Sakaki, H. Noge, S. Hotta, 1994 .

Fabrication of Interdigitated Back Contact Silicon Heterojunction Solar Cells by Inkjet Patterning

K. Saito, H. Noge, M. Kondo, 2014 .

Thermalization effect on radiative decay of excitons in quantum wires.

Nakamura, Akiyama, Wada, 1994, Physical review letters.