J. Han

发表

Ultra-submicrometer-gate AlGaAs/GaAs HEMTs

D. Ferry, J. Han, P. Newman, 1990, IEEE Electron Device Letters.

Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage

Joan M. Redwing, S. J. Pearton, K. P. Lee, 2001 .

Inductively coupled plasma etching of III–V semiconductors in BCl3-based chemistries: II. InP, InGaAs, InGaAsP, InAs and AlInAs

S. J. Pearton, W. S. Hobson, C. R. Abernathy, 1999 .

Threshold-voltage instability of polymer thin-film transistor under gate-bias and drain-bias stresses

P. Lai, J. Han, Y.R. Liu, 2008, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits.

High voltage GaN Schottky rectifiers

A. P. Zhang, J. Chyi, F. Ren, 1999 .

GaN Bipolar Junction Transistors with Regrown Emitters

A. P. Zhang, F. Ren, S. Pearton, 2001 .

Role of annealing conditions and surface treatment on ohmic contacts to p-GaN and p-Al0.1Ga0.9N/GaN superlattices

A. P. Zhang, F. Ren, S. Pearton, 2001 .

Current Gain Simulation of Npn AlGaN/GaN Heterojunction Bipolar Transistors

F. Ren, S. Pearton, J. Han, 2000 .

Processing And Device Performance Of GaN Power Rectifiers

A. P. Zhang, J. Chyi, T. Nee, 2000 .

Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers

A. P. Zhang, J. Chyi, T. Nee, 2000 .

High breakdown voltage Au/Pt/GaN Schottky diodes

Stephen J. Pearton, Gou-Chung Chi, R. G. Wilson, 2000 .

Device Processing for GaN High Power Electronics

A. P. Zhang, J. Chyi, F. Ren, 2000 .

Processing and Device Performance of GaN Power Rectifiers

A. P. Zhang, J. Chyi, T. Nee, 1999 .

GaN Etching in BCl 3 /Cl 2 Plasmas

C. G. Willison, S. Pearton, J. Lee, 1998 .

Selective inductively coupled plasma etching of group-III nitrides in Cl2- and BCl3-based plasmas

Luke F. Lester, R. J. Shul, Stephen J. Pearton, 1998 .

Dry etching of GaN and related materials: comparison of techniques

G. A. Vawter, R. J. Shul, Stephen J. Pearton, 1998 .

The Effect of Hydrogen Carrier Gas on the Morphological Evolution and Material Properties of GaN on Sapphire

R. M. Biefeld, J. Zolper, J. Han, 1997 .

High-density plasma etch selectivity for the III–V nitrides

C. G. Willison, S. Pearton, J. Lee, 1998 .

Rapid Thermal Processing of Implanted GaN Up to 1500°C

J. Zolper, S. Pearton, J. A. Sekhar, 1998 .

Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN

J. Zolper, S. Pearton, J. A. Sekhar, 1999 .

Ultra High Temperature Rapid Thermal Annealing of GaN

J. Zolper, S. Pearton, J. A. Sekhar, 1998 .

Group-III Nitride ETCH Selectivity IN BCl /Cl ICP Plasmas

Lester, C. G. Willison, S. Pearton, 1999 .

Group-III Nitride Etch Selectivity in BCl 3 /Cl 2 ICP Plasmas

C. G. Willison, S. Pearton, J. Han, 1998 .

High resolution pattern transfer in III-nitrides using BCl3/Ar inductively coupled plasmas

S. Pearton, J. Han, C. Abernathy, 1998 .

300°C GaN/AlGaN Heterojunction Bipolar Transistor

F. Ren, S. Pearton, R. Kopf, 1998 .

Direct-current characteristics of pnp AlGaN/GaN heterojunction bipolar transistors

A. P. Zhang, F. Ren, S. Pearton, 2000 .

MBE Growth of Oxides for III–N MOSFETs

F. Ren, J. Han, C. Abernathy, 1999 .

Comparison of ICl- and IBr-based plasma chemistries for inductively coupled plasma etching of GaN, InN and AlN

S. Pearton, J. Han, C. Abernathy, 1999 .

Cl2-based dry etching of the AlGaInN system in inductively coupled plasmas

S. Pearton, J. Han, C. Abernathy, 1998 .

Cl{sub 2}-based dry etching of the AlGaInN system in inductively coupled plasmas

S. Pearton, J. Han, C. Abernathy, 1997 .

Oxygen implant isolation of n-GaN field-effect transistor structures

F. Ren, S. Pearton, J. Han, 1999 .

Comparison of implant isolation species for GaN field-effect transistor structures

F. Ren, S. Pearton, J. Han, 1999 .

Thermal stability of 2H-implanted n- and p-type GaN

S. Pearton, J. Han, J. Zavada, 1998 .

Nondestructive Characterization of GaN Films Grown at Low and High Temperatures

J. Han, J. Zavada, P. Chow, 1999 .

GaN electronics for high power, high temperature applications

A. P. Zhang, J. Chyi, T. Nee, 2000 .

Ultrahigh Si+ implant activation efficiency in GaN using a high-temperature rapid thermal process system

R. J. Shul, J. C. Zolper, Stephen J. Pearton, 1998 .

Interaction of Cavities and Dislocations in Semiconductors

J. Han, J. Reno, D. Follstaedt, 1996 .

Chapter 1 MBE Growth and Electrical Properties of Wide Bandgap ZnSe-based II-VI Semiconductors

J. Han, R. Gunshor, 1997 .

Lattice location of hydrogen in Mg doped GaN

J. Han, W. Wampler, S. Myers, 2001 .

Inductively coupled plasma-induced etch damage of GaN p-n junctions

Albert G. Baca, R. J. Shul, Stephen J. Pearton, 2000 .

The band-gap bowing of AlxGa1−xN alloys

Robert M. Biefeld, Alan Francis Wright, Mary H. Crawford, 1999 .

Activation Characteristics of Donor and Acceptor Implants in GaN

J. Zolper, S. Pearton, J. A. Sekhar, 1999 .

Redistribution of implanted dopants in GaN

J. Zolper, J. A. Sekhar, J. Han, 1999 .

Si-implantation activation annealing of GaN up to 1400°C

R. F. Karlicek, J. Zolper, S. Pearton, 1998 .

Implantation activation annealing of Si-implanted gallium nitride at temperatures > 1,100 C

J. Zolper, J. Han, Robert M. Biefeld, 1997 .

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Albert G. Baca, S. J. Pearton, R. J. Shul, 1999 .

Diffusion, release, and uptake of hydrogen in magnesium-doped gallium nitride: Theory and experiment

William R. Wampler, Alan Francis Wright, Mary H. Crawford, 2001 .

W and WSix Ohmic contacts on p- and n-type GaN

S. J. Pearton, R. J. Shul, J. C. Zolper, 1999 .

Self-aligned process for emitter- and base-regrowth GaN HBTs and BJTs

F. Ren, S. Pearton, J. Lee, 2001 .

GaN/AlGaN HBT fabrication

Albert G. Baca, R. F. Kopf, R. J. Shul, 2000 .

Growth of cubic InN on GaP(1 0 0) with GaN buffer by metalorganic chemical vapour deposition

J. Han, J. Han, Hui-chan Seo, 2011 .

Wide-Bandgap Compound Semiconductors to Enable Novel Semiconductor Devices

J. Han, R. J. ShJl, 2000 .

Wide-Bandgap Compound Semiconductors to Enable Novel Semiconductor Devices

E. Jones, J. Han, W. Chow, 1999 .

Recent Progress in Implantation and Annealing of Gan and Aigan

R. M. Biefeld, J. Zolper, S. Pearton, 1997 .

Luminescence properties of GaN and Al0.14Ga0.86N/GaN superlattice doped with europium

J. Han, I. Brown, W. Jadwisienczak, 2000 .

Effect of additive noble gases in chlorine-based inductively coupled plasma etching of GaN, InN, and AlN

R. J. Shul, Stephen J. Pearton, Hyun Cho, 1999 .

Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques

A. Uedono, S. Denbaars, S. Kamiyama, 2007 .

Epitaxial growth of multiferroic YMnO3 on GaN

J. Neaton, J. Han, S. Gariglio, 2005, cond-mat/0508478.

Structural Dynamics of GaN Microcrystals in Evolutionary Selection Selective Area Growth probed by X-ray Microdiffraction

J. Han, V. Kachkanov, Jung Han, 2014, Scientific Reports.

GaN Stress Evolution During Metal-Organic Chemical Vapor Deposition

J. Han, H. Amano, E. Chason, 1998 .

Ion-implanted hydrogen in gallium nitride

C. R. Hills, J. Han, W. Wampler, 1998 .

The effect of H2 on morphology evolution during GaN metalorganic chemical vapor deposition

Robert M. Biefeld, Mary H. Crawford, David M. Follstaedt, 1997 .

Growth of AlGaN nanowires by metalorganic chemical vapor deposition

A. Nurmikko, J. Han, T. Onuma, 2005 .

Temperature dependence and current transport mechanisms in AlxGa1−xN Schottky rectifiers

N. B. Smirnov, F. Ren, S. Pearton, 2000 .

Al composition dependence of breakdown voltage in AlxGa1−xN Schottky rectifiers

N. B. Smirnov, F. Ren, S. Pearton, 2000 .

Erratum: “Effect of gate orientation on dc characteristics of Si-doped, nonpolar AlGaN/GaN metal-oxide semiconductor high electron mobility transistors” [Appl. Phys. Lett. 95, 082110 (2009)]

Yu-Lin Wang, F. Ren, S. Pearton, 2009 .

Inductively Coupled Plasma Etching of III-V Semiconductors in BCl(3)-Based Chemistries: Part 1: GaAs, GaN, GaP, GaSb and AlGaAs

S. J. Pearton, R. J. Shul, W. S. Hobson, 1998 .

Growth and characterization of AlGaInN for UV optoelectronics

J. Han, M. Crawford, A.V. Numrikko, 2000, LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings. 13th Annual Meeting. IEEE Lasers and Electro-Optics Society 2000 Annual Meeting (Cat. No.00CH37080).

In-situ reflectance monitoring during MOCVD of AlGaN

R. M. Biefeld, J. Han, T. Ng, 1998 .

MOCVD Growth of Gan on Silicon and Related Surfaces

J. Han, D. Follstaedt, J. Fleming, 1998 .

Effect of thermal annealing on the microstructural and electrical properties of Al-doped ZnO thin films grown on n-Si (1 0 0) substrates

Tae Whan Kim, Taewoong Kim, J. Han, 2010 .

Selective Dry Etching of the GaN/InN/AlN, GaAs/AlGaAs and GaAs/InGaP Systems

F. Ren, S. Pearton, J. Han, 1999 .

Patterning of GaN in High-Density Cl 2 - and BCl 3 -Based Plasmas

R. D. Briggs, S. Pearton, M. Ludowise, 1997 .

UV-photoassisted etching of GaN in KOH

S. Pearton, J. Han, C. Abernathy, 1999 .

Performance of AlGaN/GaN high electron mobility transistors at nanoscale gate lengths.

F. Ren, S. Pearton, J. Han, 2002, Journal of nanoscience and nanotechnology.