B. Iñíguez

发表

Self-consistent 2D Compact Model for Nanoscale Double Gate MOSFETs

Tor A. Fjeldly, Benjamín Iñíguez, S. Kolberg, 2006, International Conference on Computational Science.

Closed-form 2D modeling of sub-100 nm MOSFETs in the subthreshold regime

T. Fjeldly, B. Iñíguez, J. Osthaug, 2004 .

Analytical modelling of Multiple-gate MOSFETs

O. Faynot, S. Cristoloveanu, B. Iniguez, 2011, Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011.

Parasitic back-inferface conduction in planar and triple-gate SOI transistors

R. Ritzenthaler, O. Faynot, F. Lime, 2010, 2010 IEEE International SOI Conference (SOI).

An advanced drain current model for DGMOSFETs including self-heating effects

A. Lázaro, B. Iñíguez, A. Cerdeira, 2012, 2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS).

Compact model for short-channel symmetric double-gate junctionless transistors

Bruna Cardoso Paz, Marcelo Antonio Pavanello, Antonio Cerdeira, 2015 .

A Quasi-Two-Dimensional Compact Drain–Current Model for Undoped Symmetric Double-Gate MOSFETs Including Short-Channel Effects

B. Iniguez, O. Moldovan, F. Lime, 2008, IEEE Transactions on Electron Devices.

Electrical studies of semiconductor–dielectric interfaces

Ognian Marinov, M. Jamal Deen, F. Lime, 2006 .

Analytical modeling of bare surface barrier height and charge density in AlGaN/GaN heterostructures

T. Fjeldly, B. Iñíguez, N. Goyal, 2012 .

A quantum wave based compact modeling approach for the current in ultra-short DG MOSFETs suitable for rapid multi-scale simulations

F. Lime, B. Iñíguez, Fabian Hosenfeld, 2017 .

MOS-AK: Open Compact Modeling Forum Invited IWCM Paper

T. Grasser, A. Napieralski, Y. Chauhan, 2007 .

Continuous analytic I-V model for surrounding-gate MOSFETs

B. Iñíguez, J. Suñé, J. Pallarès, 2004, IEEE Electron Device Letters.

Compact Charge-Based Physical Models for Current and Capacitances in AlGaN/GaN HEMTs

T. Fjeldly, B. Iñíguez, S. Khandelwal, 2013, IEEE Transactions on Electron Devices.

Analog performance of the nanoscale double-gate metal-oxide-semiconductor field-effect-transistor near the ultimate scaling limits

J. Sáenz, B. Iñíguez, J. Suñé, 2004 .

A Compact Model for Organic Field-Effect Transistors With Improved Output Asymptotic Behaviors

B. Iñíguez, G. Horowitz, Y. Bonnassieux, 2013, IEEE Transactions on Electron Devices.

Charge-Based Modeling of Junctionless Double-Gate Field-Effect Transistors

J. Sallese, B. Iñíguez, F. Prégaldiny, 2011, IEEE Transactions on Electron Devices.

Compact model for short channel symmetric doped double-gate MOSFETs

B. Iñíguez, M. Estrada, A. Cerdeira, 2008 .

Temperature dependent compact modeling of gate tunneling leakage current in double gate MOSFETs

J. Sedlmeir, B. Iñíguez, A. Cerdeira, 2013 .

Direct protein detection with a nano-interdigitated array gate MOSFET.

Denis Flandre, Jean-Pierre Colinge, Jean-Pierre Raskin, 2009, Biosensors & bioelectronics.

The 2021 flexible and printed electronics roadmap

Michael C. McAlpine, R. Street, V. Subramanian, 2021, Flexible and Printed Electronics.

Compact Model of the Nanoscale Gate-All-Around MOSFET

J. Sáenz, B. Iñíguez, J. Suñé, 2005 .

Modeling of nanoscale gate-all-around MOSFETs

D. Jimenez, B. Iniguez, J. Pallares, 2004, IEEE Electron Device Letters.

DC thermal numerical simulation of DG MOSFET

A. Lázaro, B. Iñíguez, A. Cerdeira, 2011, Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011.

Compact Modeling of Nonlinear Contact Effects in Short-Channel Coplanar and Staggered Organic Thin-Film Transistors

H. Klauk, B. Iñíguez, A. Kloes, 2021, IEEE Transactions on Electron Devices.

Compact Modeling of Short-Channel Effects in Staggered Organic Thin-Film Transistors

H. Klauk, B. Iñíguez, A. Kloes, 2020, IEEE Transactions on Electron Devices.

Charge-Based Compact Modeling of Capacitances in Staggered Multi-Finger OTFTs

H. Klauk, U. Zschieschang, Y. Manoli, 2020, IEEE Journal of the Electron Devices Society.

Compact Capacitance Model for OTFTs at Low and Medium Frequencies

Antonio Cerdeira, Magali Estrada, Benjamin Iniguez, 2014, IEEE Transactions on Electron Devices.

Accurate modeling and parameter extraction method for organic TFTs

Antonio Cerdeira, Magali Estrada, Benjamin Iniguez, 2005 .

Modeling the behavior of charge carrier mobility with temperature in thin-film polymeric transistors

B. Iñíguez, M. Estrada, A. Cerdeira, 2010 .

Capturing Performance Limiting Effects in Tunnel-FETs A Device Re-Evaluation Résumé

B. Iñíguez, Fabian Hosenfeld, F. Horst, 2018 .

Compact model for highly-doped double-gate SOI MOSFETs targeting baseband analog applications

Denis Flandre, Antonio Cerdeira, Jean-Pierre Raskin, 2007 .

ON DOUBLE-GATE MOSFETS AND FINFETS MODELING

D. Flandre, B. Iñíguez, M. Estrada, 2014 .

Compact Models for Advanced CMOS Devices

T. Fjeldly, A. Lázaro, F. Lime, 2013 .

Compact model for long-channel cylindrical surrounding-gate MOSFETs valid from low to high doping concentrations

B. Iñíguez, A. Cerdeira, M. Cheralathan, 2011 .

A compact quantum model for fin-shaped field effect transistors valid from dc to high frequency and noise simulations

Isabel M. Tienda-Luna, Antonio Lazaro, Benjamin Iniguez, 2008 .

Explicit continuous model for long-channel undoped surrounding gate MOSFETs

H. A. Hamid, B. Iñíguez, J. Pallarès, 2005, IEEE Transactions on Electron Devices.

Temperature enhancement of terahertz responsivity of plasma field effect transistors

Krzysztof Kucharski, Dominique Coquillat, Wojciech Knap, 2012 .

Analytical Model of the Threshold Voltage and Subthreshold Swing of Undoped Cylindrical Gate-All-Around-Based MOSFETs

B. Iniguez, B. Iñíguez, J.R. Guitart, 2007, IEEE Transactions on Electron Devices.

Two-dimensional analytical threshold voltage roll-off and subthreshold swing models for undoped cylindrical gate all around MOSFET

Jaume Roig, Benjamin Iniguez, David Jiménez, 2006 .

A surface potential based compact model for lightly doped FD SOI MOSFETs with ultra-thin body

R. Ritzenthaler, F. Lime, B. Iñíguez, 2011, Ulis 2011 Ultimate Integration on Silicon.

Modeling of potentials and threshold voltage for symmetric doped double-gate MOSFETs

Antonio Cerdeira, Magali Estrada, Benjamin Iniguez, 2008 .

3-D Analytical Models for the Short-Channel Effect Parameters in Undoped FinFET Devices

D. Flandre, B. Iñíguez, J. Roig, 2007 .

Compact drain-current model for undoped cylindrical surrounding-gate metal-oxide-semiconductor field effect transistors including short channel effects

Saida Latreche, Billel Smaani, Benjamin Iniguez, 2013 .

Compact drain-current model for reproducing advanced transport models in nanoscale double-gate MOSFETs

Giuseppe Iannaccone, Enrico Sangiorgi, Juan Bautista Roldán, 2011 .

Analytical drain current model reproducing advanced transport models in nanoscale cylindrical surrounding-gate (SRG) MOSFETs

E. Sangiorgi, G. Iannaccone, B. Iñíguez, 2011 .

A simple analytical and explicit compact model for the drain current of UTB SOI MOSFETs

R. Ritzenthaler, O. Faynot, F. Lime, 2011, Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011.

High-frequency compact analytical noise model of gate-all-around MOSFETs

A. Lázaro, B. Iñíguez, B. Nae, 2010 .

High Frequency and Noise Model of Gate-All-Around MOSFETs

A. Lázaro, B. Iñíguez, B. Nae, 2009, 2009 Spanish Conference on Electron Devices.

High frequency and noise model of gate-all-around metal-oxide-semiconductor field-effect transistors

A. Lázaro, B. Iñíguez, B. Nae, 2009 .

High-frequency compact analytical noise model for double-gate metal-oxide-semiconductor field-effect transistor

Antonio Cerdeira, Magali Estrada, Antonio Lazaro, 2009 .

Compact charge and capacitance modeling of undoped ultra-thin body (UTB) SOI MOSFETs

Benjamin Iniguez, O. Moldovan, David Jiménez, 2008 .

RF and noise model of gate-all-around MOSFETs

Antonio Lazaro, Benjamin Iniguez, A. Lázaro, 2008 .

Analytical Charge and Capacitance Models of Undoped Cylindrical Surrounding-Gate MOSFETs

D. Jimenez, J. Roig, B. Iniguez, 2007, IEEE Transactions on Electron Devices.

Explicit Analytical Charge and Capacitance Models of Undoped Double-Gate MOSFETs

D. Jimenez, B. Iniguez, O. Moldovan, 2007, IEEE Transactions on Electron Devices.

New Explicit Charge and Capacitance Models for Undoped Surrounding Gate MOSFETs

B. Iñíguez, O. Moldovan, J. Roig, 2007, 2007 Spanish Conference on Electron Devices.

Compact RF Modeling of Multiple-Gate MOSFETs

B. Iniguez, O. Moldovan, A. Lázaro, 2006, 2006 European Microwave Integrated Circuits Conference.

Effect of active layer thickness on the electrical characteristics of polymer thin film transistors

B. Iñíguez, M. Deen, M. Estrada, 2010 .

A physically based C/sub /spl infin//-continuous model for small-geometry MOSFET's

E. G. Moreno, B. Iñíguez, 1995 .

Unified noise MOSFET modeling

E. G. Moreno, B. Iñíguez, 1997 .

Radiation effects simulation using an unified MOSFET model

Benjamín Iñíguez, B. Iñíguez, E. García-Moreno, 1997 .

A charge-based continuous model for submicron graded-channel nMOSFET for analog circuit simulation

Denis Flandre, Marcelo Antonio Pavanello, Michelly de Souza, 2005 .

A physically-based continuous analytical graded-channel SOI nMOSFET model for analog applications

D. Flandre, B. Iniguez, D. Flandre, 2002, Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611).

A 3-D Analytical Physically Based Model for the Subthreshold Swing in Undoped Trigate FinFETs

D. Flandre, B. Iñíguez, V. Kilchytska, 2007, IEEE Transactions on Electron Devices.

Implementation of nanoscale double-gate CMOS circuits using compact advanced transport models

Giuseppe Iannaccone, Antonio Cerdeira, Enrico Sangiorgi, 2013, Microelectron. J..

Analytical modeling of direct tunneling current through gate stacks for the determination of suitable high-k dielectrics for nanoscale double-gate MOSFETs

Antonio Cerdeira, Magali Estrada, Francois Lime, 2011 .

Analytical modeling of the gate tunneling leakage for the determination of adequate high-k dielectrics in double-gate SOI MOSFETs at the 22 nm node

R. Ritzenthaler, F. Lime, B. Iñíguez, 2010, DRC 2010.

Crystalline-like temperature dependence of the electrical characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors

F. Lime, B. Iñíguez, M. Estrada, 2017 .

Temperature dependence of terahertz radiation detection by field effect transistors

F. Lime, B. Iñíguez, W. Knap, 2012, 2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves.

DC SPICE model for nanocrystalline and microcrystalline silicon TFTs

T. Ytterdal, B. Iniguez, Josep Pallarès, 2002 .

Mobility behavior and models for fully depleted nanocrystalline ZnO thin film transistors

Sorin Cristoloveanu, Burhan Bayraktaroglu, Maryline Bawedin, 2013 .

A Complete Charge-Based Capacitance Model for IGZO TFTs

F. Lime, B. Iñíguez, M. Estrada, 2019, IEEE Electron Device Letters.

A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors

E. Fortunato, P. Barquinha, B. Iñíguez, 2016 .

EFFECT OF THE DISTRIBUTION OF STATES IN AMORPHOUS IN-GA-ZN-O LAYERS ON THE CONDUCTION MECHANISM OF THIN FILM TRANSISTORS ON ITS BASE

F. Lime, B. Iñíguez, M. Estrada, 2018 .

Effect of the capture cross section of bulk traps in amorphous materials on the frequency dependence of the Capacitance-Voltage characteristic of MIS structures

B. Iñíguez, M. Estrada, A. Cerdeira, 2015, 2015 IEEE International Autumn Meeting on Power, Electronics and Computing (ROPEC).

New numerical low frequency noise model for front and buried oxide trap density characterization in FDSOI MOSFETs

O. Faynot, R. Ritzenthaler, B. Iniguez, 2011 .

Analytical Model for Schottky Barrier Height and Threshold Voltage of AlGaN/GaN HEMTs With Piezoelectric Effect

F. M. Yigletu, B. Iñíguez, W. E. Muhea, 2018, IEEE Transactions on Electron Devices.

Compact mole fraction-dependent modeling of I-V and C-V characteristics in Al$$_{x}$$xGa$$_{1-x}$$1-xN/GaN HEMTs

B. Iñíguez, O. Moldovan, N. Kermas, 2018 .

Compact modeling solutions for short-channel SOI Schottky barrier MOSFETs

B. Iñíguez, A. Kloes, M. Schwarz, 2013 .

Deep-submicron DC to RF SOI MOSFET characterization and modelling

Denis Flandre, Pascal Simon, C. Raynaud, 1999 .

Deep‐submicron drain current to radio frequency silicon on insulator metal oxide semiconductor field‐effect transistor macromodel for designing microwave circuits

J. Raskin, B. Iñíguez, 2002 .

Area Equivalent WKB Compact Modeling Approach for Tunneling Probability in HeteroJunction TFETs Including Ambipolar Behavior

Benjamín Iñíguez, Ghader Darbandy, Fabian Horst, 2022 .

Physics and Modeling of Poly-, Micro-, and Nano-Si TFTs

M. Shur, T. Fjeldly, B. Iñíguez, 2004 .

Analytical compact modeling framework for the 2D electrostatics in lightly doped double-gate MOSFETs

Alexander Kloes, Benjamin Iniguez, Thomas Holtij, 2012 .

Uniform DC Compact Model for Schottky Barrier and Reconfigurable Field-Effect Transistors

T. Mikolajick, B. Iñíguez, A. Kloes, 2021, 2021 IEEE Latin America Electron Devices Conference (LAEDC).

Model for investigation of Ion/Ioff ratios in short-channel junctionless double gate MOSFETs

B. Iñíguez, A. Kloes, M. Graef, 2013, 2013 14th International Conference on Ultimate Integration on Silicon (ULIS).

Two-dimensional physics-based modeling of dopant-segregated Schottky barrier UTB MOSFETs

B. Iñíguez, A. Kloes, M. Schwarz, 2012, Proceedings of the 19th International Conference Mixed Design of Integrated Circuits and Systems - MIXDES 2012.

2D analytical calculation of the electrostatic potential in lightly doped Schottky barrier Double-Gate MOSFET

B. Iñíguez, A. Kloes, M. Weidemann, 2010 .

2D Analysis of source/drain carrier tunneling in lightly doped Schottky barrier DG-MOSFETs using a fully analytical model

B. Iñíguez, A. Kloes, M. Schwarz, 2011, Ulis 2011 Ultimate Integration on Silicon.

2D analytical calculation of the electric field in lightly doped Schottky barrier double-gate MOSFETs and estimation of the tunneling/thermionic current

B. Iñíguez, A. Kloes, M. Schwarz, 2011 .

Equivalent DG Dimensions Concept for Compact Modeling of Short-Channel and Thin Body GAA MOSFETs Including Quantum Confinement

G. Reimbold, F. Lime, B. Iñíguez, 2020, IEEE Transactions on Electron Devices.

Charge-Based Model for the Drain-Current Variability in Organic Thin-Film Transistors Due to Carrier-Number and Correlated- Mobility Fluctuation

H. Klauk, B. Iñíguez, A. Kloes, 2020, IEEE Transactions on Electron Devices.

Unified extraction method for amorphous and polycrystalline TFT above threshold model parameters

A. Cerdeira, B. Iniguez, M. Estrada, 2002, Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611).

2D physics-based compact model for channel length modulation in lightly doped DG FETs

B. Iñíguez, A. Kloes, M. Weidemann, 2009, 2009 MIXDES-16th International Conference Mixed Design of Integrated Circuits & Systems.

Features of the Nonlinear Harmonic Distortion in AOSTFTs

B. Iñíguez, A. Cerdeira, J. Tinoco, 2019, IEEE Transactions on Electron Devices.

DC/AC Compact Modeling of TFETs for Circuit Simulation of Logic Cells Based on an Analytical Physics-Based Framework

F. Lime, B. Iñíguez, Qing-Tai Zhao, 2017, 2017 Austrochip Workshop on Microelectronics (Austrochip).

Semi‐analytical non‐charge‐sheet and non‐depletion MOS model, for inversion charge calculation

B. Iñíguez, Roger Cabré Rodon, 2014 .

Numerical dc self-heating in planar double-gate MOSFETs

A. Lázaro, B. Iñíguez, A. Cerdeira, 2011 .

AlxGaN1‐x/AlN/GaN and DH‐AlxGaN1‐X/GaN HEMTs Threshold Voltage Model

F. M. Yigletu, B. Iñíguez, R. Cabré, 2018, physica status solidi (a).

Surface barrier height for different Al compositions and barrier layer thicknesses in AlGaN/GaN heterostructure field effect transistors

T. Fjeldly, B. Iñíguez, N. Goyal, 2013 .

Analytical high frequency GaN HEMT model for noise simulations

F. M. Yigletu, A. Lázaro, B. Iñíguez, 2017 .

ELECTRICAL PROPERTIES OF P3HT (POLY [3-HEXYLTHIOPHENE])/n-TYPE CRYSTALLINE SILICON (n-c-Si) SOLAR CELLS

B. Iñíguez, M. Estrada, J. Pallarès, 2011 .

2D Analytical Calculation of the Parasitic Source/Drain Resistances in DG-MOSFETs Using the Conformal Mapping Technique

B. Iñíguez, A. Kloes, M. Schwarz, 2012 .

Precise 2D Compact Modeling of Nanoscale DG MOSFETs Based on Conformal Mapping Techniques

T. Fjeldly, S. Kolberg, B. Iñíguez, 2006 .

Accurate semi empirical predictive model for doped and undoped double gate MOSFET

B. Iñíguez, R. Cabré, Wondwosen Eshetu Muhea, 2018, Solid-State Electronics.

Gate leakage current partitioning in nanoscale double gate MOSFETs, using compact analytical model

S. I. Garduño, F. Lime, B. Iñíguez, 2012 .

Frequency and Voltage Dependence of the Capacitance of MIS Structures Fabricated With Polymeric Materials

B. Iñíguez, M. Estrada, A. Cerdeira, 2013, IEEE Transactions on Electron Devices.

Sensor readout circuit using AOSTFTs for IGZO (In-Ga-ZnO) sensors

B. Iñíguez, M. Estrada, A. Cerdeira, 2022, 2022 IEEE Latin American Electron Devices Conference (LAEDC).

CHARGE BEHAVIOR IN ORGANIC THIN FILM TRANSISTORS

B. Iñíguez, J. Pallarès, A. Castro-Carranza, 2011 .

RF noise model for AlGaN/GaN HEMT

F. M. Yigletu, A. Lázaro, B. Iñíguez, 2017, 2017 Spanish Conference on Electron Devices (CDE).

Effect of variations in blend preparation on the properties of P3HT:PCBM blend solar cells

B. Iñíguez, M. Estrada, A. Cerdeira, 2010, 2010 27th International Conference on Microelectronics Proceedings.

Analysis and Compact Modeling of Gate Capacitance in Organic Thin-Film Transistors

G. Ghibaudo, B. Iñíguez, S. Jacob, 2019, IEEE Transactions on Electron Devices.

An insight to mobility parameters for AOSTFTs, when the effect of both, localized and free carriers, must be considered to describe the device behavior

B. Iñíguez, M. Estrada, A. Cerdeira, 2018, Solid-State Electronics.

Numerical Modeling of Organic Electrochemical Transistors

K. Leo, B. Iñíguez, A. Kloes, 2022, 2022 IEEE Latin American Electron Devices Conference (LAEDC).

Enhanced stability and mobility of solution-processed oxide thin-film transistors with bilayer terbium-incorporated indium oxide channel

D. Flandre, Guoli Li, B. Iñíguez, 2022, Applied Physics Letters.

A compact model of transconductance and drain conductance for DMG-GC-DOT cylindrical gate MOSFET

B. Iñíguez, A. Bouziane, A. Aouaj, 2020 .

Analytical study of drain current and transconductance for a new cylindrical gate MOSFET structure

B. Iñíguez, A. Bouziane, A. Aouaj, 2018, 2018 4th International Conference on Optimization and Applications (ICOA).

Current-voltage and flicker noise analysis and unified modeling for amorphous indium-gallium-zinc-oxide thin film transistors with etch stop layer from 298 to 333 K

B. Iñíguez, T. Gneiting, W. E. Muhea, 2019, Journal of Applied Physics.

On the series resistance in staggered amorphous thin film transistors

Antonio Cerdeira, Benjamín Iñíguez, Lluís F. Marsal, 2016, Microelectron. Reliab..

Compact modeling of nanoscale MOSFETs in the ballistic limit

J. Sáenz, B. Iñíguez, J. Suñé, 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

An Area Equivalent WKB Approach to Calculate the B2B Tunneling Probability for a Numerical Robust Implementation in TFET Compact Models

Benjamín Iñíguez, Fabian Horst, Atieh Farokhnejad, 2018, 2018 25th International Conference "Mixed Design of Integrated Circuits and System" (MIXDES).

Charge localization in polymeric metal-oxide-semiconductor capacitors

M. J. Deen, Ognian Marinov, Benjamin Iniguez, 2006 .

Performance of organic thin-film transistors

M. Jamal Deen, Benjamin Iniguez, O. Marinov, 2006 .

Graphene electronic sensors - review of recent developments and future challenges

Oana Moldovan, Benjamín Iñíguez, M. Jamal Deen, 2015, IET Circuits Devices Syst..

A web application for MOSFET Compact Model validation using CMC tests

R. Picos, O. Camps, M. Roca, 2008, 2008 7th International Caribbean Conference on Devices, Circuits and Systems.

CMOS radiation sensor with binary output

Benjamin Iniguez, J. Segura, E. G. Moreno, 1995 .

Evaluation of Static/Transient Performance of TFET Inverter Regarding Device Parameters Using a Compact Model

Fabian Horst, Atieh Farokhnejad, Alexander Kloes, 2019, ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC).

Charge transport in organic and polymer thin-film transistors: recent issues

M. J. Deen, Ognian Marinov, Benjamin Iniguez, 2005 .

Equivalent Length Concept for Compact Modeling of Short-Channel GAA and DG MOSFETs

F. Lime, B. Iñíguez, A. Kloes, 2019, 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).

Self-heating and kink effects in a-Si:H thin film transistors

Michael S. Shur, Tor A. Fjeldly, Ling Wang, 2000 .

Effect of Humidity on Properties of Aqueous-Processed Tb-Doped Indium Oxide Thin-Film Transistors

Guoli Li, B. Iñíguez, L. Lan, 2022, IEEE Electron Device Letters.

Mobility models for ZnO TFTs

B. Iñíguez, S. Cristoloveanu, B. Bayraktaroglu, 2012, 2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS).

A short-channel DC SPICE model for polysilicon thin-film transistors including temperature effects

Trond Ytterdal, Benjamin Iniguez, Michael Shur, 1999 .

Advances in Compact Modeling of Organic Field-Effect Transistors

Benjamin Iniguez, Gilles Horowitz, Chang-Hyun Kim, 2020, IEEE Journal of the Electron Devices Society.

Noise modeling in fully depleted SOI MOSFETs

Jean-Pierre Raskin, Benjamin Iniguez, Gilles Dambrine, 2004 .

Double gate MOSFET compact model including scattering

B. Iñíguez, J. Pallarès, L. Marsal, 2005, Conference on Electron Devices, 2005 Spanish.

RF and noise performance of double gate and single gate SOI

Antonio Lazaro, Benjamin Iniguez, A. Lázaro, 2006 .

Unified model for short-channel poly-Si TFTs

Tor A. Fjeldly, Benjamin Iniguez, Michael Shur, 1999 .

2-D Physics-Based Compact DC Modeling of Double-Gate Tunnel-FETs

Benjamín Iñíguez, Fabian Horst, Atieh Farokhnejad, 2019, IEEE Transactions on Electron Devices.

A complete and Verilog-A compatible Gate-All-Around long-channel junctionless MOSFET model implemented in CMOS inverters

Oana Moldovan, Benjamín Iñíguez, François Lime, 2015, Microelectron. J..

Experimentally verified drain-current model for variable barrier transistor

F. Lime, S. Barraud, B. Iñíguez, 2015 .

A Compact Explicit Model for Long-Channel Gate-All-Around Junctionless MOSFETs. Part I: DC Characteristics

Oana Moldovan, Francois Lime, Benjamin Iniguez, 2014, IEEE Transactions on Electron Devices.

Compact Modelling of Quantum Confinement in III-V Gate All Around Nanowire MOSFET

B. Iñíguez, M. Fedawy, A. Abdelmoneam, 2018, 2018 Spanish Conference on Electron Devices (CDE).

Compact modelling for quantum confinement for InGaAs nanowire gate all around MOSFET

B. Iñíguez, A. Abdelmoneam, 2018, Electronics Letters.

Extraction method for polycrystalline TFT above and below threshold model parameters

Adelmo Ortiz-Conde, F. J. Garcia Sanchez, Antonio Cerdeira, 2002 .

Organic thin-film transistor bias-dependent capacitance compact model in accumulation regime

Antonio Cerdeira, Benjamín Iñíguez, Lluís F. Marsal, 2012, IET Circuits Devices Syst..

Analytical Current–Voltage Model for Double-Gate a-IGZO TFTs With Symmetric Structure for Above Threshold

B. Iñíguez, M. Estrada, A. Cerdeira, 2020, IEEE Transactions on Electron Devices.

Parameter Extraction and Compact Modeling of 1/f Noise for Amorphous ESL IGZO TFTs

G. Ghibaudo, B. Iñíguez, T. Gneiting, 2020, IEEE Journal of the Electron Devices Society.

Universal compact model for long- and short-channel Thin-Film Transistors

Michael S. Shur, Trond Ytterdal, Rodrigo Picos, 2008 .

Influence of P3HT: PCBM blend preparation on the active layer morphology and cell degradation

Antonio Cerdeira, Benjamín Iñíguez, Lluís F. Marsal, 2011, Microelectron. Reliab..

MIS polymeric structures and OTFTs using PMMA on P3HT layers

Antonio Cerdeira, Magali Estrada, Benjamin Iniguez, 2008 .

Macromodel for AC and Transient Simulations of Organic Thin-Film Transistor Circuits Including Nonquasistatic Effects

H. Klauk, B. Iñíguez, A. Kloes, 2020, IEEE Transactions on Electron Devices.

Charge based, continuous compact model for the channel current in organic thin-film transistors for all regions of operation

Michael Graef, Alexander Kloes, Benjamin Iniguez, 2017 .

SPICE MODELING OF COMPOUND SEMICONDUCTOR DEVICES

Trond Ytterdal, Michael S. Shur, Tor A. Fjeldly, 1998 .

Two-dimensional analytical modeling of non-linear charge injection in bottom-contact organic field-effect transistors

Michael Graef, Benjamin Iñiguez, Alexander Kloes, 2013, Optics & Photonics - Photonic Devices + Applications.

Full capacitance model, considering the specifics of amorphous oxide semiconductor thin film transistors structures

B. Iñíguez, M. Estrada, A. Cerdeira, 2019, Solid-State Electronics.

Chapter Four – Nanoscale FETs

M. Jamal Deen, Antonio Lazaro, Rodrigo Picos, 2012 .

A numerical study of scaling issues for trench power MOSFETs

I. Cortes, Jose Rebollo, David Flores, 2005 .

Surface-Potential-Based RF Large Signal Model for Gallium Nitride HEMTs

B. Iniguez, S. Ghosh, S. Khandelwal, 2015, 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

Modeling of temperature effects in a surface-potential based ASM-HEMT model

F. M. Yigletu, Y. Chauhan, T. Fjeldly, 2014, 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE).

A compact charge-based physical model for AlGaN/GaN HEMTs

Tor A. Fjeldly, Benjamín Iñíguez, Sourabh Khandelwal, 2013, 2013 IEEE Topical Conference on Wireless Sensors and Sensor Networks (WiSNet).

Direct Source-to-Drain Tunneling Current in Ultra-Short Channel DG MOSFETs by Wavelet Transform

F. Lime, B. Iñíguez, A. Kloes, 2020, 2020 IEEE Latin America Electron Devices Conference (LAEDC).

Effect of interface charge on the dc bias stress-induced deformation and shift of the transfer characteristic of amorphous oxide thin-film transistors

Antonio Cerdeira, Benjamín Iñíguez, Magali Estrada, 2012, Microelectron. Reliab..

Dynamic Validation of the Full Model for AOSTFTs using a Ring Oscillator based on a-IGZO TFTs

B. Iñíguez, M. Estrada, A. Cerdeira, 2020, 2020 IEEE Latin America Electron Devices Conference (LAEDC).

Dynamic Simulation of a-IGZO TFT Circuits Using the Analytical Full Capacitance Model (AFCM)

B. Iñíguez, M. Estrada, A. Cerdeira, 2021, IEEE Journal of the Electron Devices Society.

Compact DC and Quasi-Static Capacitances Modeling of a-Si:H TFTs, Including Parasitic Capacitances

F. Lime, B. Iñíguez, M. Estrada, 2021, IEEE Transactions on Electron Devices.

DC self-heating effects modelling in SOI and bulk FinFETs

Antonio Lázaro, Antonio Cerdeira, Juan Bautista Roldán, 2015, Microelectron. J..

3D analytical modelling of subthreshold characteristics in vertical Multiple-gate FinFET transistors

Sorin Cristoloveanu, Francois Lime, Romain Ritzenthaler, 2011 .

Study of potential high-k dielectric for UTB SOI MOSFETs using analytical modeling of the gate tunneling leakage

Antonio Cerdeira, Magali Estrada, Francois Lime, 2011 .

Compact-Modeling Solutions For Nanoscale Double-Gate and Gate-All-Around MOSFETs

F. Danneville, B. Iniguez, T. Fjeldly, 2006, IEEE Transactions on Electron Devices.

Automatic parameter extraction techniques in IC-CAP for a compact double gate MOSFET model

Antonio Cerdeira, Benjamin Iniguez, Ghader Darbandy, 2013 .

Amorphous silicon carbide TFTs

B. Iñíguez, M. Estrada, A. Cerdeira, 2006 .

On-resistance analysis in trench power MOSFETs with fully depletion between trenches

B. Iñíguez, D. Flores, S. Hidalgo, 2005, Conference on Electron Devices, 2005 Spanish.

The Schottky barrier transistor in emerging electronic devices

V. Derycke, B. Iñíguez, J. Snyder, 2023, Nanotechnology.

Influence of a Tunneling Gate Current on the noise performance of SOI MOSFETs

F. Danneville, G. Dambrine, B. Iniguez, 2004, 2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573).

Direct parameter extraction techniques for a new poly-Si TFT model

M. Shur, T. Fjeldly, B. Iñíguez, 1999, ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307).

Conduction mechanisms of silicon oxide/titanium oxide MOS stack structures

Antonio Cerdeira, Benjamín Iñíguez, Magali Estrada, 2008, Microelectron. Reliab..

A linear “extrinsic” compact model for short-channel MOSFET drain current asymptotic dependence on drain bias in saturation regime

M. Shur, V. Poyarkov, V. Turin, 2019, International Conference on Micro- and Nano-Electronics.

A compact quantum model of nanoscale double-gate metal-oxide-semiconductor field-effect transistor for high frequency and noise simulations

Antonio Lazaro, Benjamin Iniguez, O. Moldovan, 2006 .

Investigation of Deep Submicron Single and Double Gate SOI MOSFETs in Accumulation Mode for Enhanced Performance

Denis Flandre, Benjamin Iniguez, D. Flandre, 2001 .

THIN-FILM TRANSISTOR MODELING

Michael S. Shur, Tor A. Fjeldly, Benjamin Iniguez, 1998 .

Compact I-V model for back-gated and double-gated TMD FETs

F. Lime, B. Iñíguez, A. Kloes, 2023, Solid-State Electronics.

Compact modeling of intrinsic capacitances in Double-Gate Tunnel-FETs

M. Graef, B. Iñíguez, A. Farokhnejad, 2017, 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).