Y. Wey

110-GHz GaInAs/InP double heterostructure p-i-n photodetectors

G. Y. Robinson, J. Bowers, Y. Wey, 1995 .

High speed InGaAs/InP p-i-n photodiodes fabricated on a semi-insulating substrate

D. L. Crawford, Y. Wey, G. Robinson, 1990, IEEE Photonics Technology Letters.

Microwave and millimeter wave signal generation using mode-locked semiconductor lasers with intra-waveguide saturable absorbers

J. Bowers, Y. Wey, A. Mar, 1992, 1992 IEEE Microwave Symposium Digest MTT-S.

100 GHz Double Heterostructure GaInAs/InP p-i-n Photodiode

J. Bowers, Y. Wey, K. Giboney, 1993 .

Ultrafast graded double‐heterostructure GaInAs/InP photodiode

D. L. Crawford, J. Bowers, Y. Wey, 1991 .

Room temperature 0.1 /spl mu/m CMOS technology with 11.8 ps gate delay

Y. G. Wey, Donald M. Tennant, Robert G. Swartz, 1993, Proceedings of IEEE International Electron Devices Meeting.

Cryogenic performance of a high-speed GaInAs/InP p-i-n photodiode

J. Bowers, Y. Wey, T. Reynolds, 1997 .