P. Fewster

发表

Indium Incorporation in GaInAs/GaAs Quantum Wells grown on GaAs

Karl Woodbridge, Paul F. Fewster, K. J. Moore, 1990 .

Composition and lattice‐mismatch measurement of thin semiconductor layers by x‐ray diffraction

P. Fewster, C. Curling, 1987 .

X-ray analysis of thin films and multilayers

P. Fewster, 1996 .

X-ray diffraction from low-dimensional structures

P. Fewster, 1993 .

A high‐resolution multiple‐crystal multiple‐reflection diffractometer

P. Fewster, 1989 .

The simulation and interpretation of diffraction profiles from partially relaxed layer structures

P. Fewster, 1992 .

Microstructure and composition analysis of group III nitrides by X-ray scattering

C. T. Foxon, N. Andrew, P. Fewster, 2001 .

Composition determination in quantum dots with in-plane scattering compared with STEM and EDX analysis

P. Fewster, V. Holý, D. Zhi, 2003 .

A `static' high‐resolution X‐ray diffractometer

P. Fewster, 2005 .

Absolute Lattice-Parameter Measurement

N. Andrew, P. Fewster, 1995 .

The Evolution of Strain Relaxation Close to The Critical Thickness

P. Fewster, P. Kidd, 1993 .

Plastic relaxation of metamorphic single layer and multilayer InGaAs/GaAs structures

J. David, N. Andrew, P. Fewster, 1994 .

Measurement of the lattice parameters in the individual layers of single‐crystal superlattices

P. Fewster, J. Birch, J. Sundgren, 1995 .

What is an ‘ideally imperfect’ crystal? Is kinematical theory appropriate?

P. Fewster, 2016, Acta Crystallographica Section A: Foundations and Advances.

Combining high-resolution X-ray diffractometry and topography

P. Fewster, 1991 .

THE THEORY OF X-RAY SCATTERING

P. Fewster, 2015 .

Advances in the structural characterisation of semiconductor crystals by X-ray scattering methods

P. Fewster, 2004 .

Response to Fraser & Wark’s comments on A new theory for X-ray diffraction

P. Fewster, 2018, Acta crystallographica. Section A, Foundations and advances.

X-ray diffraction from polycrystalline multilayers in grazing-incidence geometry: Measurement of crystallite size depth distribution

N. Andrew, P. Fewster, K. Barmak, 2005 .

Absolute lattice parameter measurements of epitaxial layers

P. Fewster, 1982 .

Determining the lattice relaxation in semiconductor layer systems by x‐ray diffraction

Paul F. Fewster, N. Andrew, P. Fewster, 1993 .

Reciprocal Space Mapping

P. Fewster, 1997 .

Characterization of Semiconductors by X-Ray Diffraction and Topography

P. Fewster, 2011 .

High-resolution diffraction-space mapping and topography

P. Fewster, 1994 .

Applications of multiple-crystal diffractometry

N. Andrew, P. Fewster, 1995 .

An icy mineralogy package (IMP) for in-situ studies of Titan’s surface

P. Fewster, A. Fortes, D. Dobson, 2009 .

Absolute lattice parameter measurement

P. Fewster, P. F. Fewster, 1999 .

Alignment of double-crystal diffractometers

P. Fewster, P. F. Fewster, 1985 .

Laue Orientation and Interpretation by Microcomputer

P. Fewster, 1984 .

High Resolution X-Ray Reciprocal Space Mapping of Wavy Layers

P. Fewster, P. Kidd, 1997 .

Interpretation of the diffraction profile resulting from strain relaxation in epilayers

N. Andrew, P. Fewster, P. Kidd, 1995 .

Crystallographic polarity and etching of cadmium telluride

P. Fewster, P. Whiffin, 1983 .

X-ray studies of As-doped GaN grown by plasma-assisted molecular beam epitaxy

C. T. Foxon, N. Andrew, P. Fewster, 2002 .

Measurement of 'material' parameters in multi-quantum-well structures

J. P. Gowers, H. I. Ralph, C. T. Foxon, 1987 .

Si delta -doping in GaAs: investigation of the degree of confinement and the effects of post-growth annealing

P. Fewster, R. Newman, M. Ashwin, 1995 .

Crystallographic polarity and chemical etching of CdxHg1−xTe

P. Fewster, A. Willoughby, S. Cole, 1981 .

SiGe quantum cascade structures for light emitting devices

R. Kelsall, P. Fewster, D. Paul, 2005 .

GSMBE growth and structural characterisation of SiGeC layers for HBT

P. Fewster, P. Ashburn, I. Mitrovic, 2005 .

A defect model for undoped and tellurium doped gallium arsenide

P. Fewster, 1981 .

X‐ray characterization of Si δ‐doping in GaAs

P. Fewster, R. Newman, L. Hart, 1993 .

A comparison of AlAs/GaAs multiple quantum wells grown by molecular beam and migration-enhanced epitaxy

C. T. Foxon, N. Andrew, P. Fewster, 1990 .

Multicrystal X-ray diffraction of heteroepitaxial structures

P. Fewster, 1991 .

Interface Roughness and Period Variations in MQW Structures Determined by X-ray Diffraction

P. Fewster, 1988 .

X Ray Scattering From Semiconductors

Paul F. Fewster, P. Fewster, 2000 .

Strain analysis by X-ray diffraction

Paul F. Fewster, N. Andrew, P. Fewster, 1998 .

X-ray investigation of lateral hetero-structures of inversion domains in LiNbO3, KTiOPO4 and KTiOAsO4

P. Fewster, S. Collins, P. Thomas, 2002, Acta crystallographica. Section A, Foundations and advances.

Estimating the structure factors in X-ray diffraction

P. Fewster, 2018, Acta crystallographica. Section A, Foundations and advances.

A new theory for X-ray diffraction

P. Fewster, 2014, Acta crystallographica. Section A, Foundations and advances.

Synthetic modulated structures edited by L. L. Chang and B. C. Giessen

P. Fewster, P. F. Fewster, 1987 .

EQUIPMENT FOR MEASURING DIFFRACTION PATTERNS

P. Fewster, 2000 .

The subband structure of modulation-doped pseudomorphic GaAs/(In,Ga)As/(Al,Ga)As layers

J. P. Gowers, J. Harris, K. Woodbridge, 1990 .

RHEED Studies and Interface Analysis of GaAs grown on Si(001)

Karl Woodbridge, J. P. Gowers, Paul F. Fewster, 1986 .

The Limits of X-ray Diffraction Theory

P. Fewster, 2023, Crystals.

X-Ray Scattering from Semiconductors and Other Materials

P. Fewster, 2015 .

Crystalline Layer Structures with X-Ray Diffractometry

P. Fewster, 2010 .

Dynamical diffraction in layered systems—a quest for the final formula

P. Fewster, V. Holý, 2003 .

A compact high-resolution X-ray powder diffractometer

P. Fewster, David R. D. Trout, 2013, Journal of applied crystallography.

Detailed structural analysis of semiconductors with X-ray scattering

N. Andrew, P. Fewster, V. Holý, 2001 .

Determination of the Mn concentration in GaMnAs

P. Fewster, C. Foxon, R. Martin, 2005 .

Structural and optical properties of III–V quantum wells grown on Si

J. P. Gowers, K. Woodbridge, P. Fewster, 1989 .