N. Kwak

发表

Accelerated Publication: Conformal electroless deposition of Cu seed layer on a 60-nm trench pattern modified with a self-assembled monolayer

W. Han, Gil-Ho Hwang, C. Yoon, 2009 .

Highly Reliable and Scalable Tungsten Polymetal Gate Process for Memory Devices Using Low-Temperature Plasma Selective Gate Reoxidation

Heung-Jae Cho, Sung-Wook Park, N. Kwak, 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

Comparative study of DRAM cell patterning between ArF immersion and EUV lithography

Sunyoung Koo, Jun-Taek Park, Chang-Moon Lim, 2009, Advanced Lithography.

A Comparative Study of the Atomic-Layer-Deposited Tungsten Thin Films as Nucleation Layers for W-Plug Deposition

N. Kwak, H. Sohn, Jin-Woong Kim, 2006 .

Characteristics of ALD Tungsten Nitride Using B2H6, WF6, and NH3 and Application to Contact Barrier Layer for DRAM

N. Kwak, H. Sohn, Soo‐Hyun Kim, 2007 .

Atomic Layer Deposition of Low-Resistivity and High-Density Tungsten Nitride Thin Films Using B2H6, WF6, and NH3

N. Kwak, H. Sohn, Soo‐Hyun Kim, 2006 .

Effects of the underlayer surface state on the interconnecting aluminum film properties

N. Kwak, C. Shin, Sam-Dong Kim, 1997 .

Bias polarity and frequency effects of Cu-induced dielectric breakdown in damascene Cu interconnects

N. Kwak, S. Yeom, Young‐Chang Joo, 2012 .

Modified atomic layer deposition of RuO2 thin films for capacitor electrodes

J. Roh, N. Kwak, S. Yeom, 2007 .

Multiselectivity Chemical Mechanical Polishing for NAND Flash Memories beyond 32 nm

H. Cui, N. Kwak, U. Paik, 2010 .

Characteristics of the nanoscale titanium film deposited by plasma enhanced chemical vapor deposition and comparison of the film properties with the film by physical vapor deposition

N. Kwak, H. Sohn, Jin-Woong Kim, 2006 .

Slider liquid phase epitaxial growth of Hg0.8Cd0.2Te, Hg0.7Cd0.3Te and Hg0.3Cd0.7 Te with precise control of alloy compositions

J. M. Kim, N. Kwak, S. Moon, 1992 .

Hg0.8Cd0.2Te grown by liquid phase epitaxy using Cd0.94Zn0.06Te buffer layer

Sang-Hee Suh, N. Kwak, I. Choi, 1994 .

Development of New TiN/ZrO2/Al2O3/ZrO2/TiN Capacitors Extendable to 45nm Generation DRAMs Replacing HfO2 Based Dielectrics

Noh-Jung Kwak, Han-Sang Song, Ki-Seon Park, 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

Abnormally enhanced dielectric constant in ZrO2/Ta2O5 multi-laminate structures by metallic Ta formation

Ho Jin Cho, N. Kwak, S. Yeom, 2015 .

Effects of phase of underlying W film on chemical vapor deposited-W film growth and applications to contact-plug and bit line processes for memory devices

Tae-Sik Yoon, Noh-Jung Kwak, Hyunchul Sohn, 2007 .

Gate-first high-k/metal gate DRAM technology for low power and high performance products

Sung-Joo Hong, Heung-Jae Cho, N. Kwak, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Challenges in high-aspect ratio contact (HARC) etching for DRAM capacitor formation

Sungki Park, Yongjin Kim, Noh-Jung Kwak, 2015, Advanced Lithography.

Pd Seed Layer for Electroless Cu Deposition on TaN Diffusion Barrier by Self-Assembled-Monolayer Method(SAM)

Sung-Goon Kang, N. Kwak, S. Yeom, 2007 .