G. Lucovsky

发表

Photoeffects in Nonuniformly Irradiated p‐n Junctions

G. Lucovsky, 1960 .

Remote plasma enhanced CVD deposition of silicon nitride and oxide for gate insulators in (In, Ga)As FET devices

G. Lucovsky, P. Richard, R. Markunas, 1985 .

Defect States and Structural Disorder in a-Si.

J. Bernholc, G. Lucovsky, B. N. Davidson, 1992 .

Effect of the local disorder in a-Si on the electronic density of states near the band edges

J. Bernholc, G. Lucovsky, B. N. Davidson, 1991 .

Effect of the Local Disorder in a-Si on the Electronic Density of States at the Band Edges.

J. Bernholc, G. Lucovsky, B. N. Davidson, 1991 .

Electronic States in the Gap of a-Si from Bond Angle Variations

G. Lucovsky, B. N. Davidson, 1990 .

Hydrogen localization near boron in silicon

J. Pankove, G. Lucovsky, P. Zanzucchi, 1985 .

Dissociation reactions of hydrogen in remote plasma-enhanced chemical-vapor-deposition silicon nitride

G. Lucovsky, C. Boehme, 2001 .

Low energy electron-excited nanoscale luminescence: a tool to detect trap activation by ionizing radiation

peixiong zhao, D. Fleetwood, G. Lucovsky, 2000 .

Total-dose radiation response of hafnium-silicate capacitors

Ronald D. Schrimpf, Daniel M. Fleetwood, Marty R. Shaneyfelt, 2002 .

Self-organization and the physics of glassy networks

Arizona State University, J. C. Phillips, G. Lucovsky, 2005, cond-mat/0502312.

Fourier transform infrared study of rapid thermal annealing of a-Si:N:H(D) films prepared by remote plasma-enhanced chemical vapor deposition

M. J. Williams, G. Lucovsky, Z. Lu, 1995 .

H loss mechanism during anneal of silicon nitride: Chemical dissociation

G. Lucovsky, C. Boehme, 2000 .

Voltage- and temperature-dependent gate capacitance and current model: application to ZrO/sub 2/ n-channel MOS capacitor

George A. Brown, L. Register, S. Banerjee, 2002 .

Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress

G. Lucovsky, Y. Wu, Y. M. Lee, 2003 .

Low pH Chemical Etch Route for Smooth H-Terminated Si(100) And Study Of Subsequent Chemical Stability

G. Lucovsky, D. Aspnes, B. Hinds, 1997 .

Silicon Oxynitride and Oxide-Nitride-Oxide Gate Dielectrics by Combined Plasma-Rapid Thermal Processing

G. Lucovsky, S. Hattangady, T. Yasuda, 1994 .

Integration of wet-chemical processing with low-temperature plasma-assisted processes for the formation of device-quality Si/SiO 2 interfaces on Si(111) surfaces

H. Kurz, G. Lucovsky, T. Yasuda, 1994 .

A Low-Temperature Process for Device Quality Si/SiO 2 Interfaces on Si(111)

H. Kurz, G. Lucovsky, T. Yasuda, 1993 .

Nitrogen-bonding environments in glow-discharge—deposited a − Si : H films

G. Lucovsky, Jeffrey Yang, J. Tyler, 1983 .

The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO/sub 2/ interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing

G. Lucovsky, Y. Wu, Y. Lee, 2000 .

Issues in High-ĸ Gate Stack Interfaces

V. Misra, G. Lucovsky, G. Parsons, 2002 .

Microscopic bonding and macroscopic strain relaxations at Si-SiO2 interfaces

J. C. Phillips, G. Lucovsky, J. Phillips, 2004 .

Identification of the fundamental vibrational modes of trigonal, α - monoclinic and amorphous selenium

G. Lucovsky, A. Mooradian, W. Taylor, 1967 .

Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics

peixiong zhao, D. Fleetwood, P. Dodd, 2001 .

Infrared spectroscopic study of SiOx films produced by plasma enhanced chemical vapor deposition

G. Lucovsky, S. Chao, P. Pai, 1986 .

Minimization of sub-oxide transition regions at SiSiO2 interfaces by 900°C rapid thermal annealing

G. Lucovsky, B. Hinds, A. Banerjee, 1997 .

Raman scattering characterization of carbon bonding in diamond and diamondlike thin films

R. E. Shroder, G. Lucovsky, J. Glass, 1988 .

Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry

T. Jackson, G. Lucovsky, R. Uecker, 2002 .

O-vacancies in (i) nanocrystalline HfO2 and (i) noncrystalline SiO2 and Si3N4 studied by x-ray absorption spectroscopy

G. Lucovsky, L. Miotti, K. P. Bastos, 2011 .

Spectroscopic detection of hopping induced mixed valence for Ti and Sc in GdSc[sub 1-x]Ti[sub x]O[sub 3] for x greater than the percolation threshold of ˜0.16

G. Lucovsky, L. Miotti, D. Schlom, 2011 .

Spectroscopic detection of (i) intrinsic band edge defects, and (ii) transition metal (TM) and rare earth lanthanide (REL) atom occupied states in elemental and complex oxides: A novel pathway to (i) device reliability and (ii) increased functionality in ULSI CMOS

G. Lucovsky, K. Chung, H. Seo, 2009, 2009 10th International Conference on Ultimate Integration of Silicon.

PART II: CONDUCTION BAND-EDGE STATES ASSOCIATED WITH REMOVAL OF d-STATE DEGENERACIES BY THE STATIC JAHN-TELLER EFFECT

Gerald Lucovsky, G. Lucovsky, 2006 .

Spectroscopic studies of the electrical structure of transition metal and rare earth complex oxides

G. Lucovsky, D. Schlom, J. Whitten, 2004 .

Separate and independent control of interfacial band alignments and dielectric constants in transition metal rare earth complex Oxides

G. Lucovsky, D. Schlom, J. Whitten, 2004 .

Spectroscopic Detection of Medium Range Order in Device Grade Hydrogenated Amorphous Silicon

G. Lucovsky, G. Parsons, Jinwoo Kim, 2013 .

Structural interpretation of the vibrational spectra of a-Si: H alloys

G. Lucovsky, Robert Nemanich, G. Lucovsky, 1979 .

Suppression of boron transport out of p+ polycrystalline silicon at polycrystalline silicon dielectric interfaces

R. Fair, G. Lucovsky, Hong Yang, 1999 .

Reaction pathways in remote plasma nitridation of ultrathin SiO2 films

G. Lucovsky, H. Lamb, H. Niimi, 2002 .

Application of bond constraint theory to the switchable optical memory material Ge2Sb2Te5.

D. A. Baker, G. Lucovsky, S. Agarwal, 2006, Physical review letters.

Effect of rf power on remote-plasma deposited SiO2 films

G. Lucovsky, S. Hattangady, D. Temple, 1993 .

A comparison of the long wave optical phonons in trigonal Se and trigonal Te

G. Lucovsky, 1972 .

Modeled tunnel currents for high dielectric constant dielectrics

Eric M. Vogel, P. K. McLarty, Gerald Lucovsky, 1998 .

Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices

Gerald Lucovsky, G. Lucovsky, H. Niimi, 1998 .

Optical and electrical studies of Ti- and Ta-dichalcogenides: Plasmons

G. Lucovsky, R. White, W. Stutius, 1976 .

Reflectivity studies of Ti- and Ta-dichalcogenides: Phonons

G. Lucovsky, R. White, W. Y. Liang, 1976 .

Bonding defects in amorphous silicon alloys

G. Lucovsky, G. Parsons, J. Cook, 1987 .

The Effects of Band Bending on the Optical, Electrical and Photo-Electronic Properties of a-Si:H Thin Films in Surface Cell Structures

G. Lucovsky, G. Parsons, C. Kusano, 1987 .

Infrared-Reflectance Spectra of Layered Group-IV and Group-VI Transition-Metal Dichalcogenides

Robert M. White, J. Revelli, G. Lucovsky, 1973 .

Total Dose and Bias Temperature Stress Effects for HfSiON on Si MOS Capacitors

G. Lucovsky, peixiong zhao, J. Cressler, 2007, IEEE Transactions on Nuclear Science.

Nano-regime Length Scales Extracted from the First Sharp Diffraction Peak in Non-crystalline SiO2 and Related Materials: Device Applications

J. C. Phillips, G. Lucovsky, J. Phillips, 2010, Nanoscale research letters.

Interfacial transition regions at germanium/Hf oxide based dielectric interfaces: Qualitative differences between non-crystalline Hf Si oxynitride and nanocrystalline HfO2 gate stacks

J. Lüning, G. Lucovsky, Seung Geol Lee, 2009 .

Differences Between Charge Trapping States in Irradiated Nano-Crystalline HfO$_{2}$ and Non-Crystalline Hf Silicates

peixiong zhao, D. Fleetwood, J. Felix, 2006, IEEE Transactions on Nuclear Science.

Intrinsic Electronically Active Defects in Transition Metal Elemental Oxides

G. Bersuker, J. Lüning, G. Lucovsky, 2006 .

Optic Modes in Amorphous As 2 S 3 and As 2 Se 3

G. Lucovsky, 1972 .

The effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices

G. Lucovsky, J. Keister, J. Rowe, 2000, IEEE Electron Device Letters.

Barrier layer model determined by XPS data for tunneling current reductions at monolayer nitrided Si–SiO2 interfaces

G. Lucovsky, H. Niimi, J. Keister, 2000 .

Intrinsic limitations on ultimate device performance and reliability at (i) semiconductor–dielectric interfaces and (ii) internal interfaces in stacked dielectrics

J. C. Phillips, M. Thorpe, G. Lucovsky, 2000 .

The Effects of Interfacial Suboxide Transition Regions on Direct Tunneling in Oxide and Stacked Oxide-Nitride Gate Dielectrics

G. Lucovsky, Y. Wu, H. Niimi, 1999 .

High-k Dielectrics and Dual Metal Gates: Integration Issues for New CMOS Materials

G. Lucovsky, B. Claflin, K. Flock, 1999 .

Defect properties of Si‐, O‐, N‐, and H‐atoms at Si—SiO2 interfaces

G. Lucovsky, D. R. Lee, Z. Jing, 1996 .

The effects of valency on transport properties in vitreous binary alloys of selenium

G. Lucovsky, A. Ward, M. Tabak, 1970 .

A-Si:H Thin Film Transistors and Logic Circuits Fabricated in an Integrated Multichamber System

G. Lucovsky, G. Parsons, S. S. Kim, 1990 .

Improvement of gate dielectric reliability for p+poly MOS devices using remote PECVD top nitride deposition on ultra-thin (2.4–6 nm) gate oxides

G. Lucovsky, Y. Wu, 1999 .

Improvement of gate dielectric reliability for p/sup +/ poly MOS devices using remote PECVD top nitride deposition on thin gate oxides

H. Massoud, G. Lucovsky, Y. Wu, 1998, 1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173).

ielectric Reliability for p+ P VD Top Nitride Deposition on

G. Lucovsky, Y. Wu, 1998 .

Controlled Incorporation of Nitrogen at The Top Surface of Silicon Oxide Gate Dielectrics

G. Lucovsky, H. Niimi, K. Koh, 1996 .

Integrated Two-Stage Processing of Microcrystalline Silicon Thin Films on SiO2 and Glass

G. Lucovsky, D. Wolfe, F. Wang, 1996 .

First evidence for vibrational excitations of large atomic clusters in amorphous semiconductors

G. Lucovsky, R. Nemanich, S. Solin, 1977 .

Suppression of Subcutaneous Oxidation during the Deposition of Amorphous Lanthanum Aluminate on Silicon

B. Holländer, Y. Chabal, G. Lucovsky, 2004 .

Characterization of plasma-enhanced CVD processes

G. Lucovsky, D. Hess, D. Ibbotson, 1990 .

Fluorine atom induced decreases to the contribution of infrared vibrations to the static dielectric constant of Si–O–F alloy films

G. Lucovsky, Hong Yang, 1997 .

Thermochemical stability of silicon–oxygen–carbon alloy thin films: A model system for chemical and structural relaxation at SiC–SiO2 interfaces

G. Lucovsky, R. Nemanich, B. Hinds, 1999 .

Femtosecond spectroscopic study of ultrafast carrier relaxation in hydrogenated amorphous silicon a‐Si:H

H. Kurz, G. Lucovsky, G. Parsons, 1993 .

Optical detection of photoconductivity in hydrogenated amorphous silicon, a-Si:H, in the Sub-picosecond time domain

H. Kurz, G. Lucovsky, G. Parsons, 1993 .

The role of dangling bond states in the picosecond recovery of photoinduced absorption in a-Si:H

M. J. Williams, H. Kurz, G. Lucovsky, 1991 .

Plasma-assisted formation of low defect density SiC–SiO2 interfaces

H. Kurz, G. Lucovsky, H. Niimi, 1997 .

Localized Effective Charges in Diatomic Crystals

R. Martin, G. Lucovsky, E. Burstein, 1971 .

ir reflectance spectra of Ti 2 O 3 : Infrared-active phonons and Ti 3 d electronic effects

G. Lucovsky, James Allen, R. Sladek, 1977 .

Long Range Cooperative and Local Jahn-Teller Effects in Nanocrystalline Transition Metal Thin Films

G. Lucovsky, 2009 .

Defect reduction by suppression of π-bonding coupling in nano- and non-crystalline high-(medium)- κ gate dielectrics

J. Lüning, G. Lucovsky, Seung Geol Lee, 2007 .

Thermal stabilization of device quality films deposited at low temperatures

G. Lucovsky, S. S. Kim, J. Fitch, 1990 .

Deposition of device quality silicon dioxide thin films by remote plasma enhanced chemical vapor deposition

G. Lucovsky, D. Tsu, Sang Su Kim, 1988 .

Infrared absorption in bulk amorphous As

G. Lucovsky, J. Knights, 1974 .

Transition from thermally grown gate dielectrics to deposited gate dielectrics for advanced silicon devices: A classification scheme based on bond ionicity

G. Lucovsky, 2001 .

Correlation between midgap interface state density and thickness‐averaged oxide stress and strain at Si/SiO2 interfaces formed by thermal oxidation of Si

J. T. Fitch, G. Lucovsky, C. H. Bjorkman, 1990 .

Formation of Si/SiO2 Heterostructures by Low-Temperature, Plasma-Assisted Oxidation and Deposition Processes

G. Lucovsky, T. Yasuda, Y. Ma, 1993 .

The Influence of Crystal Orientation and Processing Conditions on the Energy Distribution of Traps at the Si-SiO2 Interface

G. Lucovsky, T. Yasuda, Y. Ma, 1993 .

The Effect of Growth Ambients on the Local Atomic Structure of Thermally Grown Silicon Dioxide Thin Films

G. Lucovsky, J. Fitch, 1987 .

Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate

G. Lucovsky, C. Radtke, G. Soares, 2011 .

Characterization of charge-carrier dynamics in thin oxide layers on silicon by second harmonic generation

R. G. Albridge, Z. Marka, G. Lucovsky, 2002 .

Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation

Lloyd W. Massengill, Kenneth F. Galloway, Ronald D. Schrimpf, 2002 .

Reliability degradation of ultra-thin oxynitride and Al/sub 2/O/sub 3/ gate dielectric films owing to heavy-ion irradiation

R. S. Johnson, peixiong zhao, D. Fleetwood, 2002 .

Ultrathin Nitride/Oxide (N/O) Gate Dielectrics for p+-poly Gated PMOSFETs Prepared by a Combined Remote Plasma Enhanced CVD/Thermal Oxidation Process

G. Lucovsky, Yider Wu, 1998 .

A chemical bonding model for the native oxides of the III–V compound semiconductors

G. Lucovsky, 1981 .

Infrared-active phonons inCr2O3

G. Lucovsky, James Allen, R. Sladek, 1977 .

Integrated processing of amorphous and microcrystalline Si thin film transistors by plasma-assisted chemical-vapor deposition

M. J. Williams, G. Lucovsky, S. He, 1994 .

Optical and Electronic Properties of Conjugated Polymer -Nanocluster Semiconductor Hybrid Systems

G. Lucovsky, D. Sarma, J. Nanda, 1998 .

Defects in a-Si:H films produced by remote plasma enhanced chemical vapor deposition

G. Lucovsky, D. Tsu, G. Parsons, 1989 .

Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness

G. Lucovsky, Hong Yang, Y. Wu, 2000 .

Deposition of silicon dioxide and silicon nitride by remote plasma enhanced chemical vapor deposition

G. Lucovsky, P. Richard, R. Markunas, 1986 .

Substrate Surface Dependence of the Microstructure of μc-Si,Ge:H Deposited by Reactive Magnetron Sputtering (RMS)

G. Lucovsky, D. R. Lee, D. Maher, 1995 .

The effect of post-deposition thermal processing on MOS gate oxides formed by remote PECVD

G. Lucovsky, C. Bjorkman, S. S. Kim, 1990 .

Nuclear magnetic resonance studies of amorphous deuterated silicon nitride thin films

T. S. Cull, G. Lucovsky, P. Fedders, 1996 .

An application of the statistical shift model to the inverted Meyer-Neldel, MN, relationship in heavily-doped microcrystalline Si, μc-Si

G. Lucovsky, H. Overhof, 1993 .

Transport and Microstructure of Microcrystalline Silicon Alloys

M. J. Williams, G. Lucovsky, Y. L. Chen, 1992 .

Effects of Acceptor Concentration Gradients in GaAs Junctions on the Energy of the Fluorescence Peak

G. Lucovsky, A. Varga, 1964 .

X-ray absorption studies of elemental and complex transition metal (TM) oxides: Differences between: (i) Chemical, and (ii) Local site symmetry multivalency

G. Lucovsky, L. Miotti, C. Adamo, 2011, Ulis 2011 Ultimate Integration on Silicon.

Enhanced leakage current properties of Ni-doped Ba0.6Sr0.4TiO3 thin films driven by modified band edge state

D. Choi, G. Lucovsky, Hikaru Kobayashi, 2010 .

Detection of strain minimization in Hf-based gate dielectrics by X-ray absorption and non-linear optical second harmonic generation spectroscopy

G. Lucovsky, D. Nordlund, K. Chung, 2009, 2009 10th International Conference on Ultimate Integration of Silicon.

Separate and independent control of interfacial band alignments and dielectric constants in complex rare-earth/transition metal (Re/Tm) oxides

G. Lucovsky, J. Whitten, J. Freeouf, 2003, Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765).

Monolayer Nitrogen-Atom Distributions in Ultrathin Gate Dielectrics by Low-Temperature Low-Thermal-Budget Processing

J. Hauser, G. Lucovsky, S. Hattangady, 1995 .

The frequency response of avalanching photodiodes

G. Lucovsky, R. Emmons, 1966 .

Origin of charge density at LaAlO3 on SrTiO3 heterointerfaces: possibility of intrinsic doping.

Hideki Yamamoto, M. Beasley, G. Lucovsky, 2006, Physical review letters.

Minority Carrier Diffusion Lengths And Photoconductivity In a-Si,N:H Deposited By Remote Pecvd

M. J. Williams, G. Lucovsky, S. Cho, 1994 .

Bond Angle Disorder in Tetrahedrally Bonded Amorphous Silicon

C. Wong, G. Lucovsky, 1986 .

Local Bonding in A—Sige Alloy Films

G. Lucovsky, S. Y. Lin, J. Cook, 1985 .

Dangling Bond Defects in a-Si,Ge Alloys: A Theoretical Study Using the Tight-Binding Method

G. Lucovsky, S. Y. Lin, S. Lin, 1985 .

IV-2 – Formation of Inorganic Films by Remote Plasma-Enhanced Chemical-Vapor Deposition

G. Lucovsky, 1991 .

Electronic and structural properties of plasma-deposited a-Si:O:H - The story of O2

R. Street, G. Lucovsky, J. Knights, 1980 .

Growth of a-Si:H Films by Remote Plasma Enhanced CVD (RPECVD)

G. Lucovsky, D. Tsu, G. Parsons, 1988 .

Contributions to the infrared effective charges of oxides and chalcogenides from equilibrium charge and dynamic charge redistribution during normal mode motions

G. Lucovsky, J. Whitten, L. Sremaniak, 2003 .

Vibrational properties of amorphous alloys

G. Lucovsky, W. Pollard, 1985 .

Local structure and vibrational spectra of vAs2O3

F. L. Galeener, G. Lucovsky, 1980 .

The Raman and infrared spectra of vitreous BeF2

F. L. Galeener, G. Lucovsky, R. Geils, 1978 .

Comparison of ultrathin SiO2∕Si(100) and SiO2∕Si(111) interfaces from soft x-ray photoelectron spectroscopy

M. D. Ulrich, J. E. Rowe, Gerald Lucovsky, 2006 .

Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition

G. Lucovsky, B. Hinds, C. Hinkle, 1998 .

Ultrathin oxide gate dielectrics prepared by low temperature remote plasma-assisted oxidation

G. Lucovsky, H. Niimi, 1998 .

Bulk defects in nano-crystalline and in non-crystalline HfO2-based thin film dielectrics

M. D. Ulrich, Hyungtak Seo, Gerald Lucovsky, 2008 .

Intrinsic band edge traps in nano-crystalline HfO2 gate dielectrics

A. Stesmans, J. Lüning, G. Lucovsky, 2005 .

Structure of ultrathin SiO2/Si(111) interfaces studied by photoelectron spectroscopy

J. E. Rowe, Gerald Lucovsky, Theodore E. Madey, 1999 .

Defects and defect relaxation at internal interfaces between high-k transition metal and rare earth dielectrics and interfacial native oxides in metal oxide semiconductor (MOS) structures

J. C. Phillips, G. Lucovsky, J. Phillips, 2005 .

Self-organized Si suboxide (SiOx, x<2) interfacial layers - optimization of performance and reliability in advanced devices

G. Lucovsky, J. Phillips, 2003, Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765).

Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked

G. Lucovsky, H. Niimi, 1999 .

Independent Tunneling Reductions Relative to Homogeneous Oxide Dielectrics From i) Nitrided Interfaces, and ii) Physically-Thicker Stacked Oxide/Nitride and Oxide/Oxynitride Gate Dielectrics

G. Lucovsky, Y. Wu, Y. M. Lee, 1999 .

Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing

J. Hauser, G. Lucovsky, Y. Wu, 1998 .

Depth-dependent spectroscopic defect characterization of the interface between plasma-deposited SiO2 and silicon

G. Lucovsky, L. Brillson, Hiroake Niimi, 1998 .

Monolayer incorporation of nitrogen at Si–SiO2 interfaces: Interface characterization and electrical properties

G. Lucovsky, 1998 .

Influence of surface roughness on the electrical properties of Si–SiO2 interfaces and on second‐harmonic generation at these interfaces

H. Kurz, G. Lucovsky, T. Yasuda, 1993 .

The Physics of Hydrogenated Amorphous Silicon I

John D. Joannopoulos, Gerald Lucovsky, J. Joannopoulos, 1984 .

A Unified Chemical Bonding Model for Defect Generation in a-SiH: Photo-Induced Defects in Photovoltaic Devices and Current-Induced Defects in TFTs

G. Lucovsky, Hong Yang, 1998 .

Nitrogen: Not a Dopant in Crystalline Si (C-Si), But an N-Type Dopant in A-Si:H, Why?

M. J. Williams, G. Lucovsky, J. Whitten, 1994 .

Hydrogenated Amorphous Silicon-Nitrogen, a-Si,N:H ALLOYS: An Alternative to A-SI,C:H for the Wide Band Gap Photo-Active Material in Tandem PV Cells

M. J. Williams, G. Lucovsky, S. Cho, 1993 .

Deposition and Characterization of Near “Intrinsic” μc-Si Films Deposited by Remote Plasma-Enhanced Chemical-Vapor Deposition - RPECVD

M. J. Williams, G. Lucovsky, C. Wang, 1991 .

Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy

J. E. Rowe, Gerald Lucovsky, Theodore E. Madey, 1999 .

Multichamber Integrated Deposition System For Silicon Based Dielectric Films

Gerald Lucovsky, David V. Tsu, Gregory N. Parsons, 1989, Other Conferences.

Chemically Modified Second Harmonic Generation at Surfaces on Vicinal Si(111) Wafers

H. Kurz, G. Lucovsky, T. Yasuda, 1992 .

Si(100) Surface Preparation by In-Situ or in-Vacuo Exposure to Remotely Plasma-Generated Atomic Hydrogen: Applications to Deposited SiO 2 and Epitaxial Growth of Si

G. Lucovsky, R. Nemanich, T. Yasuda, 1990 .

Evidence for the occurrence of subcutaneous oxidation during low temperature remote plasma enhanced deposition of silicon dioxide films

G. Lucovsky, S. Hattangady, R. Markunas, 1989 .

Deposition of silicon-based dielectrics by remote plasma-enhanced chemical vapor deposition

G. Lucovsky, D. Tsu, 1989 .

Properties of the SiH bond-stretching absorption band in a-Si:H grown by remote plasma enhanced CVD (RPECVD)

G. Lucovsky, D. Tsu, 1987 .

Plasma processed ultra-thin SiO2 interfaces for advanced silicon NMOS and PMOS devices: applications to Si-oxide/Si oxynitride, Si-oxide/Si nitride and Si-oxide/transition metal oxide stacked gate dielectrics

Gerald Lucovsky, G. Lucovsky, Y. Wu, 2000 .

Monolayer-level controlled incorporation of nitrogen at Si–SiO2 interfaces using remote plasma processing

G. Lucovsky, H. Niimi, 1999 .

Reaction/annealing pathways for forming ultrathin silicon nitride films for composite oxide-nitride gate dielectrics with nitrided crystalline silicon-dielectric interfaces for application in advanced complementary metal-oxide-semiconductor devices

G. Lucovsky, 1999 .

Minimization of dangling bond defects in hydrogenated silicon nitride dielectrics for thin film transistors (TFTs)

J. C. Phillips, G. Lucovsky, J. Phillips, 1998 .

Formation of Si–SiO2 stacked‐gate structures by plasma‐assisted and rapid‐thermal processing: Improved device performance through process integration

J. Wortman, V. Misra, G. Lucovsky, 1994 .

Substrate temperature dependence of subcutaneous oxidation at Si/SiO2 interfaces formed by remote plasma‐enhanced chemical vapor deposition

G. Lucovsky, R. Markunas, G. Fountain, 1990 .

The effects of subcutaneous oxidation at the interfaces between elemental and compound semiconductors and SiO2 thin films deposited by remote plasma enhanced chemical vapor deposition

G. Lucovsky, R. Markunas, G. Fountain, 1989 .

The effects of chemical bonding and band offset constraints at Si-Dielectric interfaces on the integration of alternative high-k dielectrics into aggressively-scaled CMOS Si devices

J. C. Phillips, Gerald Lucovsky, James C. Phillips, 1999 .

Formation Of Silicon-Based Heterostructures In Multichamber Integrated-Processing Thin-Film Deposition Systems

J. T. Fitch, Gerald Lucovsky, David V. Tsu, 1990, Other Conferences.

Preparation and properties of SiO2–SiOx heterostructures formed by uninterrupted processing by remote plasma enhanced chemical vapor deposition

G. Lucovsky, D. Tsu, J. Theil, 1990 .

Reduction of defects by high temperature annealing (150°C–240°C) in hydrogenated amorphous silicon films deposited at room temperature

M. J. Williams, G. Lucovsky, G. Parsons, 1989 .

Optical emission and mass spectroscopic studies of the gas phase during the deposition of SiO2 and a‐Si:H by remote plasma‐enhanced chemical vapor deposition

G. Lucovsky, D. Tsu, G. Parsons, 1989 .

Precursors for the deposition of amorphous silicon–hydrogen alloys by remote plasma enhanced chemical vapor deposition

G. Lucovsky, D. Tsu, G. Parsons, 1989 .

Formation of Device Quality Si/SiO 2 Interfaces in a Multichamber Integrated Processing System

G. Lucovsky, R. Markunas, D. Tsu, 1989 .

Optical and electrical properties of a-Si:H films grown by remote plasma enhanced chemical vapor deposition (RPECVD)

G. Lucovsky, D. Tsu, G. Parsons, 1987 .

Radiation effects in new materials for nano-devices

M. L. Alles, Ronald D. Schrimpf, Daniel M. Fleetwood, 2011 .

Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices

S. Lee, Gerald Lucovsky, J. P. Long, 2008, Microelectron. Reliab..

Spectroscopic Studies of Electrically Active Defects in High-K Gate Dielectrics

G. Lucovsky, 2008 .

Intermolecular bonding and lattice dynamics of Se and Te

R. Martin, G. Lucovsky, K. Helliwell, 1976 .

Vibrational spectroscopy of hydrogenated amorphous silicon alloys

G. Lucovsky, 1980 .

Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 (ZrO2) layers sandwiched between thicker SiO2 layers

G. Lucovsky, R. Nemanich, C. Hinkle, 2004 .

Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO

G. Lucovsky, R. Nemanich, C. Hinkle, 2004 .

Improved Performance and Reliability in Aggressively-Scaled NMOS and PMOS FETs: i) Monolayer Interface Nitridation, and ii) Replacement of Stacked Oxide/Nitride Dielectrics With Optimized Oxide/Oxynitride Stacks

G. Lucovsky, H. Niimi, H. Yang, 1999 .

Bonding Constraints at Interfaces Between Crystalline Si and Stacked Gate Dielectrics

J. C. Phillips, G. Lucovsky, J. Phillips, 1999 .

Chemical Bonding of Alloy Atoms in Amorphous Silicon

G. Lucovsky, 1981 .

Ge doped HfO2 thin films investigated by x-ray absorption spectroscopy

G. Lucovsky, C. Radtke, L. Miotti, 2010 .

Chemical bonding and graded interfacial transition regions at transition metal, Hf(Zr), /high-k gate dielectric, Hf(Zr)O2, interfaces

G. Lucovsky, J. Whitten, 2008 .

Metal gate electrodes for devices with high-k gate dielectrics: Zr/ZrO2 and Hf/HfO2 intrinsic interfacial transition regions

G. Lucovsky, J. Whitten, 2007 .

High Performance A-Si:H Thin Film Transistors, TFTs: The Importance of Nitride Dielectrics with no Detectable Si-Si Bonding

G. Lucovsky, S. He, 1994 .

Channel Layer Surface Modifications in a-Si:II thin Film Transistors With Oxide/Nitride Dielectric Layers

G. Lucovsky, S. He, D. Stephens, 1992 .

High Channel Mobility a-Si:H Thin Film Transistors with Oxide/Nitride Dielectrics

G. Lucovsky, S. He, D. Stephens, 1992 .

Multiplet Theory for Conduction Band Edge and O-Vacancy Defect States in SiO2, Si3N4, and Si Oxynitride Alloy Thin Films

G. Lucovsky, 2011 .

Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition

J. Wortman, J. Hauser, V. Misra, 1999 .

Detection of Multivalency Charge States in Complex and Elemental Transition Metal Oxides by X-ray Absorption Spectroscopy: Controlled Multivalency as a Pathway to Device Functionality

G. Lucovsky, L. Miotti, K. P. Bastos, 2011 .

Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?

John R. Hauser, Sung-Joo Lee, Kam F. Yee, 2002, IBM J. Res. Dev..

Remote Plasma Enhanced-Metal Organic Chemical Vapor Deposition of Zirconium Oxide/Silicon Oxide Alloy, (ZrO 2 ) 1 -(SiO 2 ) 1−x (x:≤0.5), Thin Films for Advanced High-K Gate Dielectrics

R. S. Johnson, G. Lucovsky, Robert S. Johnson, 1999 .

Suppression of defect states in HfSiON gate dielectric films on n-type Ge(100) substrates

G. Lucovsky, K. Chung, H. Seo, 2008 .

Hydrogen bonding in silicon-hydrogen alloys

G. Lucovsky, R. Nemanich, J. Knights, 1978 .

High photoconductivity in magnetron sputtered amorphous hydrogenated germanium films

G. Lucovsky, J. Cook, R. Rudder, 1983 .

Photoluminescence of Eu 3+ :Y 2 O 3 Nanoclusters Embedded in SiO 2 Glass

G. Lucovsky, M. Santiago, H. Liu, 1998 .

Intermediate range order in amorphous selenium: A novel approach based on IR absorption

C. Wong, G. Lucovsky, 1985 .

Infra-red lattice bands of trigonal tellurium and selenium☆

G. Lucovsky, E. Burstein, R. Keezer, 1967 .

Conduction band-edge d-states in high-k dielectrics due to Jahn–Teller term splittings

V. Afanas’ev, J. Lüning, G. Lucovsky, 2005 .

Ultrathin Silicon Oxide and Nitride – Silicon Interface States

G. Lucovsky, L. Brillson, Hiroake Niimi, 1999 .

Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)

Robert F. Davis, Gerald Lucovsky, Robert Nemanich, 2003 .

Reductions in interface defects, Dit, by post oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices

G. Lucovsky, C. Bae, 2004 .

Reductions in interface defects, Dit, by post-oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices

G. Lucovsky, C. Bae, 2004 .

Reductions in interface defects, D it , by post oxidation plasma-assisted nitridation of GaN-SiO 2 interfaces in MOS devices

G. Lucovsky, C. Bae, 2004 .

Band offset measurements of the GaN (0001)/HfO2 interface

G. Lucovsky, R. Davis, R. Nemanich, 2003 .

Charge redistribution at GaN–Ga2O3 interfaces: a microscopic mechanism for low defect density interfaces in remote-plasma-processed MOS devices prepared on polar GaN faces

G. Lucovsky, R. Davis, R. Therrien, 2000 .

Band offset measurements of the Si3N4/GaN (0001) interface

Robert F. Davis, Gerald Lucovsky, Robert Nemanich, 2003 .

Stability Of Silicon-Oxygen-Fluorine And Carbon-Fluorine LOW-K DIELECTRICS WITH RESPECT TO ATTACK BY WATER

G. Lucovsky, H. Yang, 1998 .

Second‐harmonic generation in Si–SiO2 heterostructures formed by chemical, thermal, and plasma‐assisted oxidation and deposition processes

H. Kurz, G. Lucovsky, T. Yasuda, 1993 .

Study of SiOx decomposition kinetics and formation of Si nanocrystals in an SiO2 matrix

G. Lucovsky, B. Hinds, C. Hinkle, 1998 .

Electrical Properties of Boron-Doped μc-Si:H Prepared by Reactive Magnetron Sputtering from c-Si Targets

M. J. Williams, G. Lucovsky, Y. L. Chen, 1992 .

Band edge electronic structure of transition metal/rare earth oxide dielectrics

G. Lucovsky, 2006 .

Intrinsic limitations for CMOS with high-k gate dielectrics: electrically-active grain boundary and oxygen atom defect states

G. Lucovsky, J. Luning, 2005, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

Nanoscale depth-resolved electronic properties of SiO2/SiOx/SiO2 for device-tolerant electronics

H. Hughes, G. Lucovsky, K. Chung, 2011 .

Hydrogenated amorphous silicon-nitrogen alloys, a-Si, N:H : a candidate alloy for the wide band gap photo-active material in tandem photovoltaic (PV) devices

M. J. Williams, G. Lucovsky, S. Cho, 1993 .

Hydrogen in amorphous silicon: local bonding and vibrational properties

G. Lucovsky, 1992 .

Chemical states study of Si in SiOx films grown by PECVD

G. Lucovsky, J. Tyler, S. Chao, 1986 .

Local bonding of hydrogen in a-Si:H, a-Ge:H and a-Si, Ge:H alloy films

G. Lucovsky, 1985 .

Differences between the bonding of oxygen in glow discharge deposited a-Si:H and a-Ge:H

G. Lucovsky, Jeffrey Yang, J. Tyler, 1984 .

Electron trapping states in a-Si:(H,O) and a-Si:(H,N) alloys

G. Lucovsky, W. Pollard, Sy-Chyi Lin, 1984 .

Relation of Si–H vibrational frequencies to surface bonding geometry

G. Lucovsky, 1979 .

Chemical Bonding Self-Organizations and Percolation Theory Applied to Minimization of Macroscopic Strain: Internal Interfaces in Non-Crystalline and Nano-Crystalline Thin Films

J. C. Phillips, G. Lucovsky, J. Phillips, 2009 .

Diffusion of hydrogen and deuterium in stack systems of SixNyHz/ SixNyDz and crystalline Si

G. Lucovsky, C. Boehme, 2000 .

Silicon oxide/silicon nitride dual-layer films: a stacked gate dielectric for the 21st century

G. Lucovsky, 1999 .

Why SiN x :H is the Preferred Gate Dielectric for Amorphous Si Thin Film Transistors (TFTS) and SiO 2 is the Preferred Gate Dielectric for Polycrystalline Si TFT s

J. C. Phillips, G. Lucovsky, J. Phillips, 1999 .

Atomic structure and thermal stability of silicon suboxides in bulk thin films and in transition regions at Si–SiO2 interfaces

G. Lucovsky, 1998 .

Monolayer Nitrogen Atom Incorporation at Buried Si-SiO2 Interfaces: Preparation by Remote Plasma Oxidation/Nitridation and Characterization by On-Line Auger Electron Spectroscopy

Martin L. Green, G. Lucovsky, H. Niimi, 1998 .

Defect Reduction in Remote Plasma Deposited Silicon Nitride by Post-Deposition Rapid Thermal Annealing

J. Hauser, G. Lucovsky, Y. Wu, 1998 .

Plasma-engineered Si−SiO2 interfaces: monolayer nitrogen atom incorporation by low-temperature remote plasma-assisted oxidation in N2O

G. Lucovsky, H. Niimi, K. Koh, 1998 .

Interfacial sub-oxide regions at SiSiO2 interfaces: minimization by post-oxidation rapid thermal anneal

G. Lucovsky, B. Hinds, K. Koh, 1998 .

Ultra Low Thermal Budget Rapid Thermal Processing for Thin Gate Oxide Dielectrics: Reduction of Suboxide Transition Regions in Low Temperature Processed Si/SiO 2 Structures by A 900°C 30 Second Rapid Thermal Anneal

G. Lucovsky, B. Hinds, 1997 .

Local atomic structure and electrical properties of nitrided SiSiO2 interfaces produced by low-temperature plasma processing and rapid thermal annealing, and explained by ab-initio quantum chemistry calculations

J. Hauser, G. Lucovsky, S. Hattangady, 1996 .

Nitrided Silicon Oxide Gate Dielectrics for Submicron Device Technology

G. Lucovsky, 1996 .

Characterization of Silicon-Nitride Film Growth by Remote Plasmaenhanced Chemical-Vapor Deposition (Rpecvd)

G. Lucovsky, Z. Lu, S. Habermehl, 1993 .

Preparation and Characterization of Silicon Nanocrystals in a SiO2 Matrix and Study of Suboxide Stability

R. S. Johnson, G. Lucovsky, B. Hinds, 1996 .

A Spectroscopic Investigation of the Amorphous to Microcrystalline Transition in Silicon Prepared by Reactive Magnetron Sputtering

G. Lucovsky, W. Turner, 1993 .

SiH stretching vibration in silicon suboxides: Local and remote induction effects

G. Lucovsky, D. Tsu, 1989 .

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

Robert J. Nemanich, Gerald Lucovsky, D. E. Aspnes, 2005, Microelectron. Reliab..

Energy Differences Between the Si and the Ge Dangling Bond Defects in a-Si 1-x Ge x Alloys

G. Lucovsky, B. N. Davidson, S. Cho, 1992 .

Process-dependent band structure changes of transition-metal (Ti,Zr,Hf) oxides on Si (100)

G. Lucovsky, R. Nemanich, C. Fulton, 2004 .

Photoelectronic Properties of a-Si1-xGex:H Films

G. Lucovsky, J. Cook, R. Rudder, 1985 .

High photoconductivity in dual magnetron sputtered amorphous hydrogenated silicon and germanium alloy films

G. Lucovsky, J. Cook, R. Rudder, 1984 .

Surface Cleaning Prior to Formation of Si/SiO 2 Interfaces by Remote Plasma-Enhanced Chemical Vapor Deposition (RPECVD)

G. Lucovsky, T. Yasuda, H. Lamb, 1992 .

Low-Temperature Device-Quality SiO 2 /Si (100) Interfaces Prepared By A Combined Remote Plasma Oxidation-Deposition Process

G. Lucovsky, T. Yasuda, Y. Ma, 1991 .

Formation of Multilayer SiO 2 - SiO x Heterostructures by Control of Reaction Pathways in Remote PECVD

G. Lucovsky, D. Tsu, J. Theil, 1989 .

Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal–oxide–semiconductor devices

R. S. Johnson, V. Misra, G. Lucovsky, 2001 .

Free carrier absorption and the transient optical properties of amorphous silicon thin films: A model including time dependent free carrier, and static and dispersive interband contributions to the complex dielectric constant

H. Kurz, G. Lucovsky, R. Nemanich, 1989 .

Symmetry determined medium range order (MRO) contributions to the first sharp diffraction peak (FSDP) in non‐crystalline oxide and chalcogenide glasses

J. C. Phillips, G. Lucovsky, J. Phillips, 2009 .

Microscopic description of strain‐reducing chemical bonding self‐organizations in non‐crystalline alloys

J. C. Phillips, G. Lucovsky, J. Phillips, 2009 .

A new class of intermediate phases in non-crystalline films based on a confluent double percolation mechanism

G. Lucovsky, J. Phillips, 2007 .

Preparation of device‐quality SiO2 thin films by remote plasma‐enhanced chemical vapour deposition (PECVD): Applications in metal‐oxide‐semiconductor (MOS) devices

G. Lucovsky, 1996 .

Electronic Structure of Divalent Defects in Tetrahedrally Bonded Amorphous Materials

S. Guha, G. Lucovsky, S. Y. Lin, 1986 .

Electric and Optical Properties of μc-Si,Ge:H Alloys Deposited by Reactive Magnetron Sputtering (RMS)

G. Lucovsky, D. Maher, D. Wolfe, 1995 .

Near neighbor chemical bonding effects on Si atom native bonding defects in silicon nitride and silicon dioxide insulators

G. Lucovsky, S. Y. Lin, S. Lin, 1985 .

Optical properties of the mixed amorphous system As2SxSe3-x

G. Lucovsky, M. B. Myers, E. J. Felty, 1967 .

Physical Performance of Polymer Systems Containing Micro and Nano Fillers

G. Lucovsky, B. Claflin, A. Tsou, 1998 .

Microscopic Mechanisms for Reduced Static Dielectric Constants in Si-O-F Alloy Films

G. Lucovsky, H. Yang, 1997 .

Suppression of antiferroelectricity in TiSe2 by excess carriers

G. Lucovsky, R. White, 1977 .

Optical Characterization Of Silicon Oxycarbide Thin Films

G. Lucovsky, B. Hinds, D. Wolfe, 1997 .

Raman Scattering from Microcrystalline Films: Considerations of Composite Structures with Different Optical Absorption Properties

R. E. Shroder, G. Lucovsky, Y. LeGrice, 1989 .

Deposition of silicon oxynitride thin films by remote plasma enhanced chemical vapor deposition

G. Lucovsky, D. Tsu, S. Chao, 1987 .

Electron Cycloytron Resonance Plasma Etching/Cleaning For Si Device Fabrication

G. Lucovsky, T. Yasuda, H. Lamb, 1993 .

Contributions to Silicon-Hydrogen Bond-Stretching Frequency in Amorphous Si Alloys

G. Lucovsky, J. Whitten, Z. Jing, 1992 .

Spectroscopic studies of O-vacancy defects in transition metal oxides

G. Bersuker, J. Lüning, G. Lucovsky, 2007 .

Study of the long-wavelength optic phonons in Ga 1 − x Al x Sb

G. L. Pearson, G. Lucovsky, K. Cheng, 1975 .

Intrinsic microcrystalline silicon deposited by remote PECVD: a new thin-film photovoltaic material

G. Lucovsky, A. Wang, 1990, IEEE Conference on Photovoltaic Specialists.

Ultra-thin gate dielectrics prepared by low-temperature remote plasma-assisted oxidation

G. Lucovsky, H. Niimi, K. Koh, 1997 .

Vibrational spectra and the structure of pure vitreous B 2 O 3

F. L. Galeener, G. Lucovsky, J. Mikkelsen, 1980 .

Nucleation of p-Type Microcrystalline Silicon on Amorphous Silicon for n-i-p Solar Cells Using B(CH 3 ) 3 And BF 3 Dopant Source Gases

G. Lucovsky, H. Fujiwara, R. Collins, 1998 .

Raman and infrared spectra of vitreous As 2 O 3

F. L. Galeener, G. Lucovsky, R. Geils, 1979 .

Optical probes of the lattice dynamics of graphite

G. Lucovsky, R. Nemanich, S. Solin, 1977 .

Deposition of single phase, homogeneous silicon oxynitride by remote plasma‐enhanced chemical vapor deposition, and electrical evaluation in metal–insulator–semiconductor devices

G. Lucovsky, Y. Ma, 1994 .

Electronic structure of high-k transition metal oxides and their silicate and aluminate alloys

H. Ade, G. Lucovsky, G. Rayner, 2002 .

Electron traps at interfaces between Si(100) and noncrystalline Al2O3, Ta2O5, and (Ta2O5)x(Al2O3)1−x alloys

R. S. Johnson, G. Lucovsky, J. G. Hong, 2001 .

Spectroscopic evidence for a network structure in plasma-deposited Ta2O5 films for microelectronic applications

R. S. Johnson, F. L. Galeener, G. Lucovsky, 2001 .

Minimization of mechanical and chemical strain at dielectric-semiconductor and internal dielectric interfaces in stacked gate dielectrics for advanced CMOS devices

M. Thorpe, G. Lucovsky, J. Phillips, 2001 .

Defects in plasma-deposited a-Si: H

G. Lucovsky, R. Nemanich, J. Knights, 1979 .

Annealing of “intrinsic” and photo-induced defects in hydrogenated amorphous silicon

G. Lucovsky, G. Parsons, C. Wang, 1990 .

Post‐deposition relaxation of electronic defects in hydrogenated amorphous silicon

M. J. Williams, G. Lucovsky, G. Parsons, 1990 .

Effects of gas additives on the properties of a-Si:H films

G. Lucovsky, G. Parsons, C. Wang, 1989 .

Incorporation of polyhydride bonding groups into thin films of hydrogenated amrophous silicon (a-;Si:H)

G. Lucovsky, G. Parsons, B. N. Davidson, 1989 .

Infra-red studies of TiSe2: IR phonons and free carriers

R. Friend, G. Lucovsky, J. Mikkelsen, 1979 .

Integrated, Dual-Function Remote Plasma-Enhanced Processing Applied to Low Damage SiO 2 Etching and Removal of C-F Polymer Residues

G. Lucovsky, T. Yasuda, 1992 .

On the photoionization of deep impurity centers in semiconductors

G. Lucovsky, 1993 .

α-RuCl 3 : A New Host for Polymer Intercalation. Lamellar Polymer/α-RuCI 3 Nanocomposites.

M. Kanatzidis, G. Lucovsky, Lei Wang, 1998 .

Band-edge electronic structures, and pre-existing defects in remote plasma deposited (RPD) non-crystalline (nc-) SiO2 and GeO2

G. Lucovsky, 2013 .

Band-Edge Electronic Structure and Pre-existing Defects in Remote Plasma Deposited Non-crystalline SiO2 and GeO2

G. Lucovsky, 2013 .

Noncrystalline SiO2 and GeO2: Process induced pre-existing defects and vacated O-atom intrinsic bonding sites

K. Wu, G. Lucovsky, Jinwoo Kim, 2013 .

Non-Crystalline SiO2: Processing Induced Pre-Existing Defects Associated with Vacated O-Atom Intrinsic Bonding Sites

K. Wu, G. Lucovsky, J. Whitten, 2013 .

Length scale discontinuities between non-crystalline and nano-crystalline thin films: Chemical bonding self-organization, broken constraints and reductions of macroscopic strain

J. C. Phillips, G. Lucovsky, J. Phillips, 2008 .

A structural model for amorphous SiO2 including the effects of intermediate range order

G. Lucovsky, A. Tadros, M. Klenin, 1984 .

Low-temperature Ar/N2 remote plasma nitridation of SiO2 thin films

G. Lucovsky, H. Lamb, H. Niimi, 2002 .

Si-N Bonding at The SiO 2 /Si Interfaces During Deposition of SiO 2 by the Remote Pecvd Process

G. Lucovsky, T. Yasuda, S. Habermehl, 1991 .

Nonlinear optical spectroscopy of Si–heterostructure interfaces

H. Kurz, G. Lucovsky, Z. Lü, 1996 .

Stability of Si–O–F low-K dielectrics: attack by water molecules as function of near-neighbor Si–F bonding arrangements

G. Lucovsky, Hong Yang, 1999 .

Stability of Si-O-F low-K dielectrics: Attack by water molecules as function of near-neighbor Si-F bonding arrangements

G. Lucovsky, Hong Yang, 1998 .

Longitudinal optical vibrations in vitreous SiO2

F. L. Galeener, G. Lucovsky, 2008 .

Long wave optical phonons in the alloy systems: Ga1−xInxAs, GaAs1−xSbx and InAs1−xSbx

G. Lucovsky, M. Chen, 1970 .

Microscopic model for enhanced dielectric constants in low concentration SiO2-rich noncrystalline Zr and Hf silicate alloys

G. Lucovsky, G. Rayner, 2000 .

Local Field Contributions to the Bond‐Stretching Frequencies of Si–H and Si–H2 Groups on Singular and Vicinal Si(111)

G. Lucovsky, H. Yang, 1997 .

Optical anisotropy of singular and vicinal Si–SiO2 interfaces and H‐terminated Si surfaces

G. Lucovsky, T. Yasuda, D. Aspnes, 1994 .

Longitudinal Optical Vibrations in Glasses: GeO 2 and SiO 2

F. L. Galeener, G. Lucovsky, 1976 .

Low‐temperature growth of silicon dioxide films: A study of chemical bonding by ellipsometry and infrared spectroscopy

J. K. Srivastava, M. J. Mantini, Gerald Lucovsky, 1987 .

Structural models for amorphous semiconductors and insulators

G. Lucovsky, G. Connell, 1978 .

Structural interpretation of the infrared and Raman spectra of glasses in the alloy systemGe1−xSx

G. Lucovsky, F. L. Galeener, G. Lucovsky, 1974 .

Optical phonon anisotropies in the layer crystals SnS 2 and SnSe 2

R. Martin, G. Lucovsky, R. White, 1976 .

Comments on the structure of chalcogenide glasses from infrared spectroscopy

G. Lucovsky, 1969 .

Oxygen-bonding environments in glow-discharge-deposited amorphous silicon-hydrogen alloy films

Wolodymyr Czubatyj, G. Lucovsky, S. S. Chao, 1983 .

Chemical effects on the frequencies of Si-H vibrations in amorphous solids

G. Lucovsky, 1979 .

Conduction band-edge States associated with the removal of d-state degeneracies by the Jahn-Teller effect

A. Stesmans, H. Ade, G. Lucovsky, 2005, IEEE Transactions on Device and Materials Reliability.

The lattice polarizability of PbI2

G. Lucovsky, R. White, R. Zallen, 1976 .

Specification of medium range order in amorphous materials

G. Lucovsky, 1987 .

Infrared active optical vibrations of graphite

G. Lucovsky, Robert Nemanich, S. A. Solin, 1977 .

Local bonding environments of Si–OH groups in SiO2 deposited by remote plasma‐enhanced chemical vapor deposition and incorporated by postdeposition exposure to water vapor

David V. Tsu, G. Lucovsky, J. A. Theil, 1990 .

Silicon nitride and silicon diimide grown by remote plasma enhanced chemical vapor deposition

G. Lucovsky, D. Tsu, 1986 .

Strain‐reducing chemical bonding self‐organizations in nanocrystalline composites and non‐crystalline glasses and thin films

G. Lucovsky, 2010 .

Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy

G. Lucovsky, R. Nemanich, Woochul Yang, 2006 .

Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te5

Ying Zhang, Michael A. Paesler, Simone Raoux, 2011 .

Coupled local mode vibrations in a‐Si alloy films

G. Lucovsky, Jeffrey Yang, J. Tyler, 1984 .

Vibrational properties of deuterated a-Si alloys

G. Lucovsky, Jeffrey Yang, J. Tyler, 1983 .

Thermal stability of plasma-nitrided aluminum oxide films on Si

G. Lucovsky, G. Soares, I. Baumvol, 2004 .

Infrared Reflectance in Quaternary Alloys: Ga1−xAlxAs1−yPy

R. Burnham, G. Lucovsky, A. Alimonda, 1974 .

Spectroscopic emission studies of O2/He and N2/He plasmas in remote plasma enhanced chemical vapor deposition

G. Lucovsky, D. Tsu, G. Parsons, 1988 .

Vibrational properties of glasses: Intermediate range order

G. Lucovsky, C. Wong, G. Lucovsky, 1983 .

Local bonding of oxygen and hydrogen in a-Si:H:O thin films

G. Lucovsky, W. Pollard, 1983 .

Atomic structure in SiO2 thin films deposited by remote plasma‐enhanced chemical vapor deposition

David V. Tsu, J. T. Fitch, G. Lucovsky, 1989 .

Chemical bonding of polyatomic-ion implants in Si

R. Tsu, G. Lucovsky, G. Azarbayejani, 1985 .

Silicon Suboxides: The “Co-Deposition” of a-Si:H and SiO 2

G. Lucovsky, D. Tsu, M. W. Watkins, 1988 .

The Growth of Silicon Oxide Films by Remote Plasma Enhanced CVD

G. Lucovsky, D. Tsu, 1986 .

Formation of nano-crystalline Si by thermal annealing of SiOx, SiCx and SiOyCx amorphous alloys: model systems for advanced device processing

G. Lucovsky, D. Wolfe, 2000 .

Production of Silicon Nanocrystals by Thermal Annealing of Silicon-Oxygen and Silicon-Oxygen-Carbon Alloys: Model Systems for Chemical and Structural Relaxation at Si-SiO 2 and Sic-SiO 2 Interfaces

G. Lucovsky, B. Hinds, D. Wolfe, 1998 .

Studies of SiH2Ci2/H2 Gas Phase Chemistry for Selective Thin Film Growth of Crystalline Silicon, c-Si, Using Remote Plasma Enhanced Chemical Vapor Deposition

G. Lucovsky, S. Hattangady, R. Markunas, 1991 .

Control of Process-Induced Defects in the Formation of Single and Multiple layer dielectric Structures for Si Semiconductor Devices

G. Lucovsky, T. Yasuda, S. He, 1992 .

Formation of thin film dielectrics by remote plasma-enhanced chemical-vapor deposition (remote PECVD)

G. Lucovsky, R. Markunas, G. Fountain, 1989 .

Chemical Reaction Pathways for the Deposition of Amorphous Silicon-Hydrogen Alloys by Remote Plasma Enhanced CVD

G. Lucovsky, G. Parsons, D. Tsu, 1988 .

Control of Bonded SiH in Silicon Oxides Deposited by Remote Plasma Enhanced CVD

G. Lucovsky, D. Tsu, G. Parsons, 1987 .

Reliability of nitrided Si–SiO2 interfaces formed by a new, low‐temperature, remote‐plasma process

J. Hauser, G. Lucovsky, D. R. Lee, 1995 .

Nitrogen‐atom incorporation at Si–SiO2 interfaces by a low‐temperature (300 °C), pre‐deposition, remote‐plasma oxidation using N2O

G. Lucovsky, C. Magee, D. R. Lee, 1995 .

A structural interpretation of the infrared absorption spectra of a-Si:H:O alloys

G. Lucovsky, G. Lucovsky, 1982 .

Ultrafast recombination and trapping in amorphous silicon

Heinrich Kurz, Gerald Lucovsky, Gregory N. Parsons, 1989 .

Photoelectronic properties of a‐Si:H and a‐Ge:H thin films in surface cell structures

G. Lucovsky, G. Parsons, C. Kusano, 1987 .

Thin films of a‐Si1−xGex:H alloys by dual magnetron sputtering in a UHV chamber

G. Lucovsky, J. Cook, R. Rudder, 1985 .

Native oxide formation on CdTe

G. Lucovsky, S. S. Choi, S. S. Choi, 1988 .

Optical properties and electronic structure of crossroads material MnTe

G. Lucovsky, J. Allen, J. Mikkelsen, 1977 .

Low-temperature deposition of hydrogenated amorphous silicon (a-Si:H) : control of polyhydride incorporation and its effects on thin film properties

David V. Tsu, Gerald Lucovsky, Gregory N. Parsons, 1989 .

Aspects of the Molecular Non-Molecular Transition in Se and Te

R. Martin, G. Lucovsky, 1974 .

Phonons in polysilane alloys

G. Lucovsky, W. Pollard, 1982 .

Infrared Reflectivity Spectra of the Mixed Crystal SystemGa1−xInxSb

G. Lucovsky, M. F. Chen, T. S. Plaskett, 1970 .

Integrated processing of silicon oxynitride films by combined plasma and rapid‐thermal processing

G. Lucovsky, S. V. Hattangady, G. Lucovsky, 1996 .

Fixed and trapped charges at oxide–nitride–oxide heterostructure interfaces formed by remote plasma enhanced chemical vapor deposition

G. Lucovsky, T. Yasuda, Y. Ma, 1993 .

Optical Lattice Modes of Mixed Polar Crystals

G. Lucovsky, E. Burstein, M. Brodsky, 1968 .

Study of the optic phonons in the III-V quaternary alloy system: Ga 1 − x Al x As 1 − y P y by the average t -matrix approximation

G. Lucovsky, P. Sen, 1975 .

A molecular model for the vibrational modes in chalcogenide glasses

Richard M. Martin, G. Lucovsky, R. Martin, 1972 .

Core and Valence Levels in Hydrogemated Amorphous Silicon

G. Lucovsky, L. Kazmerski, S. Asher, 1986 .

Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces

G. Lucovsky, H. Niimi, H. Yang, 2000 .

Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics

J. C. Phillips, V. Misra, G. Lucovsky, 1999 .

Incorporation of Nitrogen Atoms at Si/SiO 2 Interfaces of Field Effect Transistors (FETs) to Improve Device Reliability

G. Lucovsky, J. Whitten, D. R. Lee, 1995 .

Low-temperature plasma-assisted oxidation of Si: a new approach for creation of device-quality SiSiO2 interfaces with deposited dielectrics for applications in Si MOSFET technologies

J. Wortman, V. Misra, G. Lucovsky, 1994 .

Control of Si-SiO 2 Interface Properties in MOS Devices Prepared by Plasma-Assisted and Rapid Thermal Processes

Veena Misra, B. Hornung, G. Lucovsky, 1993 .

Intrinsic stress and stress gradients at the SiO2/Si interface in structures prepared by thermal oxidation of Si and subjected to rapid thermal annealing

Fred H. Pollak, J. T. Fitch, G. Lucovsky, 1989 .

Long-wavelength optic phonons inGa1−xAlxP

R. Burnham, G. Lucovsky, A. Alimonda, 1976 .

Infrared Reflection Spectra ofGa1−xInxAs: A New Type of Mixed-Crystal Behavior

G. Lucovsky, M. Brodsky, 1968 .

Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics

Veena Misra, J. C. Phillips, Gerald Lucovsky, 1999 .

Heterointerface dipoles: Applications to (a) Si–SiO2, (b) nitrided Si–N–SiO2, and (c) SiC–SiO2 interfaces

H. Massoud, G. Lucovsky, Hong Yang, 1998 .

THE DYNAMIC IONIC CHARGE OF ZINCBLENDE TYPE CRYSTALS.

G. Lucovsky, M. Brodsky, Elias Burstein, 2009 .

Study of the optic modes of Ge 0.30 S 0.70 glass by infrared and Raman spectroscopy

F. L. Galeener, G. Lucovsky, J. P. Deneufville, 1974 .

Short-range order in amorphous semiconductors

G. Lucovsky, G. Lucovsky, T. Hayes, 1979 .

Long-Wavelength Optical Phonons in Ga1-xInxP

G. Lucovsky, A. Ward, M. Brodsky, 1971 .

Extension of a Linear Diatomic-Chain Model for the Calculation of Local-Mode Frequencies in Real Crystals

G. Lucovsky, E. Burstein, M. Brodsky, 1970 .

Electron trapping in noncrystalline remote plasma deposited Hf-aluminate alloys for gate dielectric applications

R. S. Johnson, Gerald Lucovsky, Christopher L. Hinkle, 2002 .

Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. II. Strain-relief at internal dielectric interfaces between SiO2 and alternative gate dielectrics

J. C. Phillips, J. Maria, G. Lucovsky, 2004 .

Spectroscopic Studies of Electronic Structure of Elemental and Complex Transition Metal Oxides: d-state Occupation and Device Functionality

G. Lucovsky, L. Miotti, K. Chung, 2009 .

Nonlinear composition dependence of x-ray photoelectron spectroscopy and Auger electron spectroscopy features in plasma-deposited zirconium silicate alloy thin films

G. Lucovsky, G. Rayner, Y. Zhang, 2002 .

Low-temperature preparation of GaN-SiO2 interfaces with low defect density. II. Remote plasma-assisted oxidation of GaN and nitrogen incorporation

G. Lucovsky, C. Bae, 2004 .

X-ray absorption spectra for transition metal high-κ dielectrics: Final state differences for intra- and inter-atomic transitions

H. Ade, G. Lucovsky, R. Nemanich, 2004 .

Photoconductivity and optical stability of intrinsic μc-Si films formed by remote plasma-enhanced chemical-vapor deposition, remote pecvd

M. J. Williams, G. Lucovsky, C. Wang, 1991 .

Formation of Microcrystalline Silicon film by RMS Process

G. Lucovsky, R. Nemanich, G. Parsons, 1989 .

Barrier‐limited transport in μc‐Si and μc‐Si,C thin films prepared by remote plasma‐enhanced chemical‐vapor deposition

G. Lucovsky, C. Wang, Y. Chen, 1992 .

Ir studies of disordered zincblende semiconductors III-V-II-VI alloys and GaAs-Ga2/3Se

G. Lucovsky, J. Mikkelsen, 1976 .

THE STRUCTURE OF AMORPHOUS SELENIUM FROM INFRARED MEASUREMENTS

G. Lucovsky, 1969 .

Deposition of μc-Si and μc-SiC thin films by remote plasma-enhanced chemical-vapor deposition

G. Lucovsky, R. Nemanich, M. Williams, 1991 .

The preparation of microcrystalline silicon (μc‐Si) thin films by remote plasma‐enhanced chemical vapor deposition

M. J. Williams, G. Lucovsky, C. Wang, 1991 .

Erratum: “Low-temperature (<450 °C), plasma-assisted deposition of poly-Si thin films on SiO2 and glass through interface engineering” [J. Vac. Sci. Technol. A 15, 1035 (1997)]

G. Lucovsky, D. Wolfe, F. Wang, 1998 .

Low-temperature (<450 °C), plasma-assisted deposition of poly-Si thin films on SiO2 and glass through interface engineering

G. Lucovsky, D. Wolfe, F. Wang, 1997 .

How do Impurities Affect the Growth of μc-Si:H?

G. Lucovsky, A. Matsuda, M. Kondo, 1998 .

Properties of intrinsic and doped a-Si:H deposited by remote plasma enhanced chemical vapor deposition

G. Lucovsky, D. Tsu, G. Parsons, 1988 .

Instability of incorporated nitrogen in HfO2 films grown on strained Si0.7Ge0.3 layers

G. Lucovsky, K. Chung, M. Cho, 2009 .

Electronic Properties of GaN (0001) – Dielectric Interfaces

G. Lucovsky, R. Davis, R. Nemanich, 2004 .

Transit-time considerations in p-i-n diodes.

G. Lucovsky, R. F. Schwarz, R. B. Emmons, 1964 .

A Low Temperature Plasma-Assisted Deposition Process for Microcrystalline Thin Film Transistors, TFTS

G. Lucovsky, G. Lucovsky, S. S. He, 1994 .

Spectroscopic study of chemical phase separation in zirconium silicate alloys

G. Lucovsky, G. Rayner, D. Kang, 2003 .

Coordination dependent vibrational properties of amorphous semiconductors alloys

G. Lucovsky, R. Nemanich, S. Solin, 1975 .

Ionicity effects on defects in chalcogenide alloys

R. Street, G. Lucovsky, 1979 .

Defect-controlled carrier transport in amorphous SiO2

G. Lucovsky, 1979 .

Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition

R. S. Johnson, G. Lucovsky, Isreal Baumvol, 2001 .

π-Bonding contributions in the chemisorption of oxygen onto non-polar compound semiconductor surfaces

R. S. Bauer, G. Lucovsky, 1979 .

INTERFACE ELECTRONIC STRUCTURE OF TA2O5-AL2O3 ALLOYS FOR SI-FIELD-EFFECT TRANSISTOR GATE DIELECTRIC APPLICATIONS

R. S. Johnson, G. Lucovsky, T. Madey, 2002 .

Deposition of Dielectric Films by Remote Plasma Enhanced CVD

G. Lucovsky, R. Markunas, D. Tsu, 1986 .

Selenium, the Amorphous and Liquid States

G. Lucovsky, 1979 .

Mechanism of H2 desorption from monohydride Si(100)2 × 1H

G. Lucovsky, J. Whitten, Z. Jing, 1993 .

Simplified bond-hyperpolarizability model of second harmonic generation: Application to Si-dielectric interfaces

R. S. Johnson, G. Lucovsky, D. Aspnes, 2002 .

Preparation of Native Oxide and Carbon-Minimized Ge Surface by NH4OH -Based Cleaning for High-k ∕ Ge MOS Gate Stacks

G. Lucovsky, K. Chung, H. Seo, 2009 .

Microstructure of Si Films Deposited on Si(100) Surfaces by Remote Plasma-Enhanced Chemicalvapor Deposition, Rpecvd: Dependence on Process Pressure and Substrate Temperature

G. Lucovsky, S. Habermehl, S. He, 1993 .

Differences between silicon oxycarbide regions at SiCSiO2 prepared by plasma-assisted oxidation and thermal oxidations

H. Kurz, G. Lucovsky, H. Niimi, 1998 .

Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping

G. Lucovsky, D. Aspnes, K. Gundogdu, 2010, 1011.4386.

Effects of thermal history on stress‐related properties of very thin films of thermally grown silicon dioxide

J. T. Fitch, Gerald Lucovsky, G. Lucovsky, 1989 .

Local atomic order in native III–V oxides

R. S. Bauer, G. Lucovsky, 1980 .

The Electrical Properties of Silicon Oxide Deposited By Remote Plasma Enhanced Chemical Vapor Deposition (Rpecvd).

G. Lucovsky, D. Tsu, Sang S. Kim, 1987 .

Ligand field splittings in core level transitions for transition metal (TM) oxides: Tanabe-Sugano diagrams and (TM) dangling bonds in vacated O-atom defects

G. Lucovsky, J. Whitten, Kun Wu, 2013 .

Transport through singlet states in resistive memory materials: Magneli-phase, TinO2n−1 for 9 ≥ n > 3, and TiO2-HfO2 alloys

G. Lucovsky, Jinwoo Kim, 2013 .

Remote plasma-deposited GeO2 with quartz-like Ge- and O-local bonding: Band-edge state and O-vacancy comparisons with SiO2

K. Wu, G. Lucovsky, J. Whitten, 2011 .

Monoclinic textured HfO2 films on GeOxNy/Ge(100) stacks using interface reconstruction by controlled thermal processing

G. Lucovsky, L. Miotti, D. Nordlund, 2010 .

New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing

R. S. Johnson, G. Lucovsky, H. Niimi, 2000 .

Electronic Structure, Amorphous Morphology and Thermal Stability of Transition Metal Oxide and Chalcogenide Alloys

G. Lucovsky, 2001 .

Hydrogen in amorphous semiconductors

G. Lucovsky, J. Knights, 1980 .

Intrinsic bonding defects in thin-film non-crystalline solids: Amorphous silicon (a-Si), hydrogenated amorphous silicon (a-Si:H), amorphous selenium (a-Se) and amorphous selenium–arsenic alloys (a-As x Se1− x )

G. Lucovsky, 2009 .

Controlled Nitrogen Incorporation at Si–SiO2 Interfaces by Remote Plasma-Assisted Processing

Martin L. Green, G. Lucovsky, H. Niimi, 1996 .

Limitations for aggressively scaled CMOS Si devices due to bond coordination constraints and reduced band offset energies at Si-high-K dielectric interfaces

J. C. Phillips, G. Lucovsky, 2000 .

Effects of Resonance Bonding on the Properties of Crystalline and Amorphous Semiconductors

G. Lucovsky, G. Lucovsky, R. White, 1973 .

Chemical bonding and structure in layered transition metal dichalcogenides

G. Lucovsky, R. White, 1972 .

A MICROSCOPIC MODEL FOR THE Qss DEFECT AT THE Si/SiO2 INTERFACE

G. Lucovsky, D. Chadi, 1980 .

Electronic Structure of Alternative High-k Dielectrics

G. Lucovsky, J. Whitten, 2005 .

Electronic structure of SiO2: Charge redistribution contributions to the dynamic dipoles/effective charges of the infrared active normal modes

G. Lucovsky, J. Whitten, Y. Zhang, 2002 .

Spectroscopic evidence for valence-alternation-pair defect states in vitreous SiO2

G. Lucovsky, 1979 .

Process induced pre-existing defects in non-crystalline SiO2 and GeO2 at vacated O-atom bonding sites and comparisons with Ge-S(Se) alloy bonding sites

G. Lucovsky, D. Zeller, Jin Woo Kim, 2013 .

Lattice dynamics of the layered compounds InI and InBr

G. Lucovsky, R. Nemanich, J. Mikkelsen, 1982 .

Intermediate phases in binary and ternary alloys: a new perspective on semi-empirical bond constraint theory

J. C. Phillips, G. Lucovsky, 2007 .

Intermediate range order in amorphous solids

F. L. Galeener, G. Lucovsky, 1980 .

Intrinsic localized defect states in a-Se associated with dihedral angle distortions

C. Wong, J. Bernholc, G. Lucovsky, 1987 .

Coherent light detection in solid-state photodiodes

G. Lucovsky, R. B. Emmons, G. Lucovsky, 1963 .

Controlling the Particle Size of Quantum Dots Incorporated in Hybrid Materials

F. Monte, G. Lucovsky, Yu-huan Xu, 1998 .

Sputtering and native oxide formation on (110) surfaces of Cd1−xMnxTe

G. Lucovsky, P. Lange, K. Bachmann, 1986 .

A novel approach for determining the effective tunneling mass of electrons in HfO 2 and other high- K alternative gate dielectrics for advanced CMOS devices

G. Lucovsky, Christopher L. Hinkle, Robert Nemanich, 2004 .

c Silicon Thin Films Deposited by Remote Plasma Enhanced Chemical Vapor Deposition Process

G. Lucovsky, R. Nemanich, G. Parsons, 1990 .

Deposition of Amorphous and Microcrystalline Si,C Alloy Thin Films by a Remote Plasma-Enhanced Chemical-Vapor Deposition Process

G. Lucovsky, R. Nemanich, C. Wang, 1991 .

Deposition of Heavily-Doped μc-Silicon Thin Films by Remote Plasma-Enhanced Chemical-Vapor Deposition Process (remote PECVD)

M. J. Williams, G. Lucovsky, C. Bjorkman, 1990 .

Origins of silicon solar cell passivation by SiNx:H anneal

G. Lucovsky, C. Boehme, 2002 .

Paramagnetic centres associated with bonding defects in v-SiO2

G. Lucovsky, 1980 .

The Optical Properties of Plasma-Deposited SiO 2 and Si 3 N 4 Bragg Reflectors in the Spectral Range from 1.8 to 3.0 eV

H. Kurz, G. Lucovsky, K. Leo, 1992 .

Intimate valence alternation pairs in amorphous SiO2

G. Lucovsky, 1980 .

Local atomic structure of silicon suboxides (SiOx, x < 2)

G. Lucovsky, P. Richard, J. Tyler, 1985 .

Time dependent dielectric wearout (TDDW) technique for reliability of ultrathin gate oxides

G. Lucovsky, Qi Xiang, G. Lucovsky, 1999, IEEE Electron Device Letters.

Elimination of sub-oxide transition regions at SiSiO2 interfaces by rapid thermal annealing at 900°C

H. Kurz, G. Lucovsky, B. Hinds, 1997 .

Low-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process

G. Lucovsky, C. Bae, 2004 .

Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2–HfO2–SiO2–Si stacks

G. Lucovsky, C. Hinkle, Y. Strzhemechny, 2008 .

Studies of bonding defects, and defect state suppression in HfO2 by soft X-ray absorption and photoelectron spectroscopies

G. Bersuker, J. Lüning, G. Lucovsky, 2007 .

Local bonding analysis of the valence and conduction band features of TiO2

J. Lüning, G. Lucovsky, L. Fleming, 2007 .

Jahn–Teller d-state term splittings in Ti, Zr, and Hf elemental oxides: Intrinsic bonding/anti-bonding states and conduction/valence band edge intrinsic defects

G. Lucovsky, 2007 .

Spectroscopic and electrical detection of intermediate phases and chemical bonding self-organizations in (i) dielectric films for semiconductor devices, and (ii) chalcogenide alloys for optical memory devices

J. C. Phillips, D. A. Baker, G. Lucovsky, 2007 .

Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2

N. A. Stoute, J. Lüning, G. Lucovsky, 2006 .

A Study of Conduction Band Edge States in Complex Oxides By X-Ray Absorption Spectroscopy

J. Lüning, G. Lucovsky, L. Edge, 2006 .

Suppression of Jahn-Teller term-split band edge states in the x-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3

N. A. Stoute, J. Lüning, G. Lucovsky, 2006 .

Detection of nanocrystallinity by X-ray absorption spectroscopy in thin film transition metal/rare-earth atom, elemental and complex oxides

J. Lüning, G. Lucovsky, S. Stemmer, 2006 .

Intrinsic bonding defects in transition metal elemental oxides

Gennadi Bersuker, Patrick Lysaght, Gerald Lucovsky, 2006, Microelectron. Reliab..

Intrinsic limitations on the performance and reliability of high-k gate dielectrics for advanced silicon devices

G. Lucovsky, G. Lucovsky, 2005, 2005 IEEE International Integrated Reliability Workshop.

Narrowing the field of high-k gate dielectrics: intrinsic electronically-active bonding defects in nanocrystalline transition metal oxides

G. Lucovsky, 2006, 2006 International Workshop on Nano CMOS.

Band alignment between (100)Si and complex rare earth∕transition metal oxides

A. Stesmans, Y. Jia, M. Caymax, 2004 .

Chemical and physical limits on the performance of metal silicate high-k gate dielectrics

Gerald Lucovsky, Gilbert B. Rayner, Robert S. Johnson, 2001, Microelectron. Reliab..

Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability

Gerald Lucovsky, G. Lucovsky, 1999, IBM J. Res. Dev..

Auger electron spectroscopy studies of silicon nitride, oxide, and oxynitride thin films: Minimization of surface damage by argon and electron beams

David V. Tsu, M. J. Mantini, G. Lucovsky, 1987 .

A study of chemical bonding in suboxides of silicon using Auger electron spectroscopy

C. Wong, G. Lucovsky, J. Tyler, 1986 .

Electronic structure of noncrystalline transition metal silicate and aluminate alloys

H. Ade, G. Lucovsky, D. Sayers, 2001 .

Ultrathin oxide-nitride gate dielectric MOSFET's

J. Hauser, G. Lucovsky, C. Parker, 1998, IEEE Electron Device Letters.

Correlations between electronic structure of transition metal atoms and performance of high-k gate dielectrics in advanced Si devices

G. Lucovsky, 2002 .

Electron trapping in non-crystalline Ta- and Hf-Aluminates for gate dielectric applications in aggressively scaled silicon devices

R. S. Johnson, Gerald Lucovsky, Christopher L. Hinkle, 2002 .

Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics

G. Lucovsky, Curt A. Richter, H. R. Huff, 1999 .

Directional dispersion of extraordinary optical phonons in α-quartz in the frequency domain from 380 to 640cm−1

G. Lucovsky, J. Onstott, 1970 .

Thermal evolution and electrical correlation of defect states in Hf-based high-κ dielectrics on n-type Ge (100): Local atomic bonding symmetry

G. Lucovsky, D. Nordlund, K. Chung, 2009 .

Spectroscopic studies of metal high‐k dielectrics: transition metal oxides and silicates, and complex rare earth/transition metal oxides

H. Ade, G. Lucovsky, R. Nemanich, 2004 .

Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3–Ta2O5 alloys

G. Lucovsky, Robert S. Johnson, J. G. Hong, 2001 .

Formation of device quality Si/SiO2 interfaces at low substrate temperatures by remote plasma enhanced chemical vapor deposition of SiO2

G. Lucovsky, S. S. Kim, J. Fitch, 1990 .

Low temperature plasma-assisted oxidation and thin-film deposition processes for forming device-quality SiO2/Si and composite dielectric-SiO2/Si heterostructures

G. Lucovsky, T. Yasuda, S. Habermehl, 1992 .

Cener for advanced electronic materials processing

N. A. Masnari, J. Wortman, J. Hauser, 1993, Proceedings of the IEEE.

Low‐temperature formation of device‐quality SiO2/Si interfaces by a two‐step remote plasma‐assisted oxidation/deposition process

G. Lucovsky, T. Yasuda, S. Habermehl, 1992 .

Si/SiO2 interfaces formed by remote plasma‐enhanced chemical vapor deposition of SiO2 on plasma‐processed Si substrates

G. Lucovsky, T. Yasuda, S. Habermehl, 1992 .

Low‐temperature preparation of SiO2/Si(100) interfaces using a two‐step remote plasma‐assisted oxidation‐deposition process

G. Lucovsky, S. Habermehl, G. Lucovsky, 1992 .

Fabrication and performance of thin film transistors, TFTs, incorporating doped μc-Si source and drain contacts, and boron-compensated μc-Si channel layers

M. J. Williams, G. Lucovsky, S. He, 1993 .

Effects of NH3 and N2 source gases and plasma excitation frequencies on the reaction chemistry for Si3N4 thin‐film growth by remote plasma‐enhanced chemical‐vapor deposition

G. Lucovsky, S. Hattangady, J. Theil, 1992 .

Studies of the coupling of final d*-states in mixed Hf and Ti oxides (HfO2)x(TiOx)1-x and other complex oxides

H. Ade, G. Lucovsky, R. Nemanich, 2005 .

Bond strain and defects at interfaces in high-k gate stacks

J. C. Phillips, Gerald Lucovsky, G. Lucovsky, 2005, Microelectron. Reliab..

Electronic structure of transition metal/rare earth alternative high-K gate dielectrics: interfacial band alignments and intrinsic defects

Gerald Lucovsky, G. Lucovsky, 2003, Microelectron. Reliab..

Band offset energies in zirconium silicate Si alloys

G. Lucovsky, J. Whitten, Y. Zhang, 2003 .

A molecular orbital model for the electronic structure of transition metal atoms in silicate and aluminate alloys

G. Lucovsky, J. Whitten, Y. Zhang, 2001 .

A study of electronic states in a-SiOx and a-SiNx thin films by infrared, auger electron and X-ray photoelectron spectroscopies

C. Wong, G. Lucovsky, P. Richard, 1985 .

Predeposition plasma nitridation process applied to Ge substrates to passivate interfaces between crystalline-Ge substrates and Hf-based high-K dielectrics

G. Lucovsky, K. Chung, H. Seo, 2009 .

A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf(Zr) silicate alloys

G. Lucovsky, C. Hinkle, G. Rayner, 2004 .

Cathodoluminescence spectroscopy of nitrided SiO2–Si interfaces

G. Lucovsky, Hiroake Niimi, A. Young, 1999 .

Deposition of microcrystalline hydrogenated silicon,germanium alloy (μc-SixGe1 − x:H) films by reactive magnetron sputtering (RMS)

G. Lucovsky, D. Maher, C. Christensen, 1996 .

Plasma enhanced chemical vapor deposition: Differences between direct and remote plasma excitation

David V. Tsu, G. Lucovsky, G. Lucovsky, 1987 .

Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces

G. Lucovsky, B. D. White, L. Brillson, 2000 .

Cathodoluminescence measurements of suboxide band-tail and Si dangling bond states at ultrathin Si–SiO2 interfaces

G. Lucovsky, G. Jessen, L. Brillson, 1998 .

Minimization of suboxide transition regions at Si–SiO2 interfaces by 900 °C rapid thermal annealing

G. Lucovsky, B. Hinds, A. Banerjee, 1997 .

Nitrogen bonding, stability, and transport in AlON films on Si

G. Lucovsky, G. Soares, I. Baumvol, 2004 .

Time-dependent dielectric wearout technique with temperature effect for reliability test of ultrathin (<2.0 nm) single layer and dual layer gate oxides

G. Lucovsky, M. Lin, Y. Wu, 2000 .

Band-Edge Electronic States, and Pre-Existing Defects in Remote Plasma Deposited (RPD) GeO2 and SiO2

G. Lucovsky, J. Whitten, B. Papas, 2012, 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).

Ultrathin device quality oxide‐nitride‐oxide heterostructure formed by remote plasma enhanced chemical vapor deposition

G. Lucovsky, G. Lucovsky, T. Yasuda, 1994 .

Hydrogen bonding arrangements at Si–SiO2 interfaces

G. Lucovsky, J. Whitten, Z. Jing, 1995 .

Deposition of a‐Si,Sn:H alloy films by reactive magnetron sputtering from separate Si and Sn targets

G. Lucovsky, G. Parsons, M. Mantini, 1986 .

Lattice Vibrations in Trigonal HgS

G. Lucovsky, A. Pinczuk, E. Burstein, 1970 .

Local atomic structure at thermally grown Si/SiO2 interfaces

G. Lucovsky, F. Pollak, C. Bjorkman, 1989 .

CHEMICAL BONDING OF ALLOY AND DOPANT ATOMS IN AMORPHOUS SILICON

G. Lucovsky, 1981 .

Rapid Thermal Annealing of Low Temperature Silicon Dioxide Films

G. Lucovsky, J. Fitch, 1987 .

Deposition of SiO2 Thin Films by Remote Plasma Enhanced Chemical Vapor Deposition (Remote PECVD)

G. Lucovsky, D. Tsu, S. S. Kim, 1988 .

Electronic states at the interface of Ti–Si oxide on Si(100)

G. Lucovsky, R. Nemanich, C. Fulton, 2002 .

Processing of Inorganic-Organic Hybrids From Metal Alkoxides and Phenyltriethoxysilane

G. Lucovsky, S. Katayama, B. Claflin, 1998 .

Extrinsic interface formation of HfO2 and Al2O3∕GeOx gate stacks on Ge (100) substrates

M. Heyns, G. Lucovsky, M. Meuris, 2009 .

Remote plasma-processing (RPP), medium range order, and precursor sites for dangling bond defects in “amorphous-Si(H)” alloys: Photovoltaic and thin film transistor devices

C. Cheng, G. Lucovsky, Y. Zhang, 2014 .

Spectroscopic Detection of Medium Range Order in Hydrogenated Amorphous Silicon, a-Si(H): Applications in Photovolatics, Thin Film Transistors and Si-based Microelectronics☆

R. Street, K. Wu, G. Lucovsky, 2013 .

Deposition and characterization of amorphous and micro-crystalline Si,C alloy thin films by a remote plasma-enhanced chemical-vapor deposition process : RPECVD

G. Lucovsky, R. Nemanich, C. Wang, 1991 .

Bond strain and defects at Si–SiO2 and internal dielectric interfaces in high-k gate stacks

J. C. Phillips, G. Lucovsky, 2004 .

Interface studies of tungsten nitride and titanium nitride composite metal gate electrodes with thin dielectric layers

G. Lucovsky, B. Claflin, M. Binger, 1998 .

Growth kinetics and characterizations of gallium nitride thin films by remote PECVD

G. Lucovsky, K. Bachmann, S. Choi, 1993 .

Gaussian impurity bands in GaAs

G. Lucovsky, 1965 .

Many-Electron Multiplet Theory Applied to O-Atom Vacancies in High-κ Dielectrics

G. Lucovsky, L. Miotti, K. P. Bastos, 2011 .

Spectroscopic detection of hopping induced mixed valence for Ti and Sc in GdSc1−xTixO3 for x greater than the percolation threshold of ∼0.16

G. Lucovsky, L. Miotti, D. Schlom, 2011 .

Qualitative Differences Between Conduction Band Edge Excitonic States and Electron Tapping in (i) SiO 2 and (ii) Si 3 N 4 and Si Oxynitride Alloy Films

G. Lucovsky, 2010 .

Comparisons between intrinsic bonding defects in d0 transition metal oxide such as HfO2, and impurity atom defects in d0 complex oxides such as GdScO3

G. Lucovsky, K. Chung, D. Schlom, 2009 .

Many-Electron Multiplet Theory Applied to O-Vacancies in (i) Nanocrystalline HfO2 and (ii) Non-crystalline SiO2 and Si Oxynitride Alloys

G. Lucovsky, L. Miotti, K. P. Bastos, 2011 .

Intrinsic limitations on device performance and reliability from bond-constraint induced transition regions at interfaces of stacked dielectrics

J. C. Phillips, M. Thorpe, G. Lucovsky, 2000 .

Hydrogen atom participation in metastable defect formation at SiSiO2 interfaces

G. Lucovsky, J. Whitten, H. Yang, 1997 .

The Role of Hydrogen Atoms (H Atoms) in Metastable Defect Formation at Si–SiO2 Interfaces and in Hydrogenated Amorphous Si (a‐Si:H)

G. Lucovsky, J. Whitten, H. Yang, 1997 .

Recrystallization of amorphous silicon deposited on ultra thin microcrystalline silicon layers

G. Lucovsky, D. Wolfe, F. Wang, 1997 .

Process and Surface Characterization of Hydrogen Plasma Cleaning of Si(100)

G. Lucovsky, R. Nemanich, R. Markunas, 1990 .

Deconvolution of Thickness-Averaged Structural and Optical Properties of Thermally Grown and Rpecvd SiO 2 Films

G. Lucovsky, C. Bjorkman, C. Shearon, 1993 .

Interface instabilities and electronic properties of ZrO2 on silicon (100)

G. Lucovsky, R. Nemanich, T. E. Cook, 2004 .

Part I: Bond strain and defects at Si-SiO2 and dielectric interfaces in high-k gate stacks

G. Lucovsky, 2006 .

The Effects of Intrinsic In-Plane Stress on the Local Atomic Structure of Thermally Grown SiO 2

G. Lucovsky, C. Bjorkman, J. Fitch, 1988 .

Integration of ultrathin (1.6/spl sim/2.0 nm) RPECVD oxynitride gate dielectrics into dual poly-Si gate submicron CMOSFETs

G. Lucovsky, G. Lucovsky, H. Yang, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

Ultrathin nitride/oxide (N/O) gate dielectrics for p/sup +/-polysilicon gated PMOSFETs prepared by a combined remote plasma enhanced CVD/thermal oxidation process

G. Lucovsky, G. Lucovsky, Y. Wu, 1998, IEEE Electron Device Letters.

Controlled nitrogen incorporation at the gate oxide surface

G. Lucovsky, S. V. Hattangady, G. Lucovsky, 1995 .

Gate Oxides: Properties and Characterization

V. Misra, G. Lucovsky, 2001 .

GaAs, a Sensitive Photodiode for the Visible

G. Lucovsky, P. Cholet, 1960 .

Infra-red effective charges for amorphous, monoclinic and trigonal Se

C. Wong, G. Lucovsky, 1985 .

Strain Dependent Diffusion During Dry Thermal Oxidation of Crystalline Si

G. Lucovsky, C. Bjorkman, 1993 .

Local Atomic Structure of Thermally Grown SiO2 Films

G. Lucovsky, E. Irene, J. Fitch, 1988 .

Deposition of GaN by Remote Plasma-Enhanced Chemical-Vapor Deposition (Remote PECVD)

G. Lucovsky, K. Bachmann, S. Choi, 1990 .

A new approach for calculating the electronic structure and vibrational properties of non-crystalline solids: Effective charges for infrared-active normal mode vibrations in oxide and chalcogenide materials

G. Lucovsky, J. Whitten, L. Sremaniak, 2003 .

Spectroscopic evidence for bonding coordination defects in amorphous as

J. Joannopoulos, G. Lucovsky, R. Nemanich, 1978 .

Avalanche multiplication in InAs photodiodes

G. Lucovsky, R. Emmons, 1965 .

Electron Microscopy Studies of Undoped and Phosphorus Doped Si:H and Si,C:H Films

G. Lucovsky, J. Bentley, D. Maher, 1993 .

Strain-eliminating chemical bonding self-organizations within intermediate phase (IP) windows in chalcogenide, oxide and nitride non-crystalline bulk glasses and deposited thin film binary, ternary and quaternary alloys

J. C. Phillips, G. Lucovsky, 2009 .

Bond constraint theory studies of chalcogenide phase change memories

G. Lucovsky, M. Paesler, D. Baker, 2008 .

Chemical self-organization length scales in non- and nano-crystalline thin films

J. C. Phillips, G. Lucovsky, 2007 .

EXAFS study of local order in the amorphous chalcogenide semiconductor Ge2Sb2Te5

G. Lucovsky, M. Paesler, P. Taylor, 2007 .

A self-consistent model for defect states in a-Si and a-Si:H

G. Lucovsky, J. Phillips, 2007 .

Local bonding arrangements in amorphous Ge2Sb2Te5: the importance of Ge and Te bonding

G. Lucovsky, M. Paesler, D. Baker, 2006 .

Suppression of chemical phase separation in high-k zirconium an hafnium nitro-silicate and alumino-silicate alloys for CMOS applications

J. C. Phillips, G. Lucovsky, J. Whitten, 2005, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. I. Strain relief at the Si–SiO2 interface

J. C. Phillips, G. Lucovsky, 2004 .

Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. II. Strain-relief at internal dielectric interfaces between SiO2 and alternative gate dielectrics

J. C. Phillips, J. Maria, G. Lucovsky, 2004 .

Chemical bonding and electronic structure of high-κ transition metal dielectrics: applications to interfacial band offset energies and electronically active defects

G. Lucovsky, J. Whitten, 2003 .

Amorphous morphology, thermal stability and electronic structure of non-crystalline transition-metal elemental and binary oxides, and chalcogenides

G. Lucovsky, 2002 .

Intrinsic limitations on performance and reliability of i) Si oxynitride and ii) high-k T-M oxides, and silicate and aluminate alloy gate dielectrics

G. Lucovsky, 2001, Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537).

Electronic structure of high-k transition-metal and rare-earth gate dielectrics for aggressively-scaled silicon devices

G. Lucovsky, 2001, Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537).

Physical and chemical constraints on the application of rapid thermal processing to the deposition and post-deposition processing of alternative high-k gate dielectrics

G. Lucovsky, 2001, 9th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2001.

Application of constraint theory to Si-dielectric interfaces in a-Si:H and poly-Si thin film transistors (TFTs)

J. C. Phillips, G. Lucovsky, 2000 .

Why phase-change Materials work: An EXAFS Investigation of Ge-Sb-Te Alloys

G. Lucovsky, M. Paesler, P. Taylor, 2006 .

ELECTRONIC STRUCTURE AND CHEMICAL BONDING IN HIGH-K TRANSITION METAL AND LANTHANIDE SERIES RARE EARTH ALTERNATIVE GATE DIELECTRICS: APPLICATIONS TO DIRECT TUNNELING AND DEFECTS AT DIELECTRIC INTERFACES

G. Lucovsky, 2005 .

Local Bonding, Phase Stability and Interface Properties of Replacement Gate Dielectrics, Including Silicon Oxynitride Alloys and Nitrides, and Film ‘Amphoteric’ Elemental Oxides and Silicates

G. Lucovsky, 2002 .

Interfacial transition regions of gate dielectrics in advanced silicon devices

J. C. Phillips, M. Thorpe, G. Lucovsky, 2001 .

Interfacial Properties of Si-Si 3 N 4 formed by Remote Plasma Enhanced Chemical Vapor Deposition

V. Misra, G. Lucovsky, H. Lazar, 1999 .

Ultrafast Nonlinear Optical Spectroscopy of a Dual-band Negative Index Metamaterial All-optical Switching Device References and Links

J. Pendry, S. Brueck, G. Bartal, 2022 .

Band offset measurements of the Si 3 N 4 Õ GaN „ 0001 ... interface

G. Lucovsky, T. E. Cook, W. Mecouch, 2003 .

Average energy gaps in the binary glass-alloy systems: Ge 1-x Se x and As 1-x Se x

G. Lucovsky, G. Lucovsky, 1977 .

Charge Redistribution at GaN–Ga2O3 Interfaces: A Microscopic Mechanism for Low Defect Density Interfaces in Remote Plasma Processed MOS Devices Prepared on Polar GaN Faces

G. Lucovsky, R. Davis, R. Therrien, 1999 .