A. Fujiwara

发表

A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors

Yasuo Takahashi, H. Inokawa, A. Fujiwara, 2003 .

Single-electron counting statistics and its circuit application in nanoscale field-effect transistors at room temperature.

A. Fujiwara, K. Nishiguchi, 2009, Nanotechnology.

Multigate single-electron transistors and their application to an exclusive-OR gate

Yasuo Takahashi, Kenji Yamazaki, Kenji Kurihara, 2000 .

Electron aspirator using electron–electron scattering in nanoscale silicon

D. Moraru, Yasuo Takahashi, A. Fujiwara, 2018, Nature Communications.

Detection of single holes generated by impact ionization in silicon

D. Moraru, Yasuo Takahashi, A. Fujiwara, 2018, Applied Physics Letters.

Large array of sub-10-nm single-grain Au nanodots for use in nanotechnology.

Gilles Patriarche, Dominique Vuillaume, Akira Fujiwara, 2011, Small.

Self-aligned gate-all-around InAs/InP core–shell nanowire field-effect transistors

A. Fujiwara, S. Saito, K. Tateno, 2015 .

Encapsulated gate-all-around InAs nanowire field-effect transistors

Guoqiang Zhang, Satoshi Sasaki, Tetsuomi Sogawa, 2013 .

Infrared detection with silicon nano-field-effect transistors

Yasuo Takahashi, H. Inokawa, A. Fujiwara, 2007 .

Single‐Electron Transistor and its Logic Application

Yasuo Takahashi, H. Inokawa, A. Fujiwara, 2010 .

Development of silicon single-electron devices

Yasuo Takahashi, H. Inokawa, A. Fujiwara, 2003 .

Room temperature piezoelectric displacement detection via a silicon field effect transistor

A. Fujiwara, K. Nishiguchi, I. Mahboob, 2009 .

Single-electron counting statistics of shot noise in nanowire Si metal-oxide-semiconductor field-effect transistors

A. Fujiwara, K. Nishiguchi, Y. Ono, 2011 .

Metallic behaviour in SOI quantum wells with strong intervalley scattering

A. Fujiwara, I. Duchemin, Y. Hirayama, 2013, Scientific reports.

Pauli-spin-blockade transport through a silicon double quantum dot

H. Inokawa, A. Fujiwara, Y. Ono, 2007, 0707.3513.

Tuneable electromechanical comb generation

A. Fujiwara, K. Nishiguchi, I. Mahboob, 2012 .

Full adder operation based on Si nanodot array device

Hiroshi Inokawa, Akira Fujiwara, Yasuo Takahashi, 2009, 2008 IEEE Silicon Nanoelectronics Workshop.

Si Nanodot Device Fabricated by Thermal Oxidation and their Applications

Yasuo Takahashi, H. Inokawa, A. Fujiwara, 2011 .

Single electron tunnelling transistor with tunable barriers using silicon nanowire MOSFET

Hiroshi Inokawa, Yasuo Takahashi, Kenji Yamazaki, 2006 .

Carrier transport in indium-doped p-channel silicon-on-insulator transistors between 30 and 285 K

A. Fujiwara, G. P. Lansbergen, Y. Ono, 2011 .

Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics

Yasuo Takahashi, S. Horiguchi, H. Inokawa, 2008 .

Detection of single charges and their generation-recombination dynamics in Si nanowires at room temperature

Yasuo Takahashi, A. Fujiwara, K. Yamazaki, 2002 .

Bound exciton photoluminescence from ion‑implanted phosphorus in thin silicon layers.

A. Fujiwara, M. Notomi, K. Nishiguchi, 2011, Optics express.

Si nano-devices using an electron-hole system

A. Fujiwara, Y. Takahashi, 2002, Proceedings of the 5th European Workshop on Low Temperature Electronics.

Spin splitting in EuO(111)/Si(111) spin-filter tunnel junctions with atomically sharp interface

A. Fujiwara, H. Omi, Y. Krockenberger, 2018, Japanese Journal of Applied Physics.

Simulating Capacitances to Silicon Quantum Dots: Breakdown of the Parallel Plate Capacitor Model

A. Fujiwara, T. Thorbeck, N. Zimmerman, 2012, IEEE Transactions on Nanotechnology.

Conductance modulation by individual acceptors in Si nanoscale field-effect transistors

Yasuo Takahashi, H. Inokawa, A. Fujiwara, 2007 .

Wide-band idler generation in a GaAs electromechanical resonator

A. Fujiwara, K. Nishiguchi, I. Mahboob, 2011 .

Quantized conductance in a small one-dimensional Si wire on a thin silicon-on-insulator substrate fabricated using SiN-film-masked oxidation

Yasuo Takahashi, K. Murase, A. Fujiwara, 1998 .

Fabrication of Si single-electron transistors with precise dimensions by electron-beam nanolithography

Kenji Yamazaki, Hideo Namatsu, A. Fujiwara, 2003 .

Valley polarization in Si(100) at zero magnetic field.

A. Fujiwara, Y. Ono, Y. Hirayama, 2006, Physical review letters.

Multi-mode parametric coupling in an electromechanical resonator

A. Fujiwara, K. Nishiguchi, I. Mahboob, 2013 .

Molecular diodes: Breaking the Landauer limit.

A. Fujiwara, N. Clement, 2017, Nature nanotechnology.

One-by-one trap activation in silicon nanowire transistors.

A. Fujiwara, K. Nishiguchi, D. Vuillaume, 2010, Nature communications.

Stochastic data processing circuit based on single electrons using nanoscale field-effect transistors

Yasuo Takahashi, H. Inokawa, A. Fujiwara, 2008 .

Resonant escape over an oscillating barrier in a single-electron ratchet transfer

K. Itoh, A. Fujiwara, K. Nishiguchi, 2010, 1002.2422.

Separately contacted monocrystalline silicon double-layer structure with an amorphous silicon dioxide barrier made by wafer bonding

A. Fujiwara, K. Nishiguchi, K. Takashina, 2010 .

Anomalous resistance ridges along filling factor nu=4i.

A. Fujiwara, Y. Takahashi, Y. Ono, 2006, Physical review letters.

Silicon single-electron devices

Hiroshi Inokawa, Yasuo Takahashi, Akira Fujiwara, 1999 .

Tunneling spectroscopy of electron subbands in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors

A. Fujiwara, K. Nishiguchi, Y. Ono, 2010 .

Silicon-Based, Tunable-Barrier Single Charge Sources

A. Fujiwara, Y. Takahashi, N. Zimmerman, 2004, 2004 Conference on Precision Electromagnetic Measurements.

A silicon bi-layer system

Yasuo Takahashi, S. Horiguchi, A. Fujiwara, 2004 .

Asymmetric tunnel barrier in a Si single-electron transistor

Yasuo Takahashi, K. Murase, A. Fujiwara, 1999 .

Intersubband Scattering in Double-Gate MOSFETs

A. Fujiwara, Y. Takahashi, Y. Ono, 2006, IEEE Transactions on Nanotechnology.

A simple and inexpensive technique for PDMS/silicon chip alignment with sub-μm precision

A. Fujiwara, K. Nishiguchi, D. Vuillaume, 2014 .

Phonon lasing in an electromechanical resonator.

A. Fujiwara, K. Nishiguchi, I. Mahboob, 2013, Physical review letters.

Seebeck effect in a nanometer-scale dot in a Si nanowire observed with electron counting statistics

A. Fujiwara, K. Nishiguchi, K. Chida, 2022, Applied Physics Letters.

High inversion current in silicon nanowire field effect transistors

Eric M. Vogel, John E. Bonevich, Sang-Mo Koo, 2004 .

Effect of the Si/SiO2 Interface on Diffusion in SiO2

K. Shiraishi, K. Itoh, Yasuo Takahashi, 2005 .

Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2

K. Shiraishi, K. Itoh, Yasuo Takahashi, 2003 .

Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions

K. Shiraishi, K. Itoh, Yasuo Takahashi, 2003 .

Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures

A. Fujiwara, K. Nishiguchi, Y. Ono, 2009 .

Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones: Two-level fluctuator stability

M. Furlan, Yasuo Takahashi, H. Inokawa, 2008 .

Subgigahertz Multilayer-Graphene Nanoelectromechanical System Integrated with a Nanometer-Scale Silicon Transistor Driven by Reflectometry

A. Fujiwara, K. Nishiguchi, H. Yamaguchi, 2023, Physical Review Applied.

A gate-defined silicon quantum dot molecule

H. Inokawa, A. Fujiwara, Y. Ono, 2008 .

Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor

Hiroshi Inokawa, Yasuo Takahashi, Kenji Yamazaki, 2006 .

Origin of ferromagnetism of MnSi1.7 nanoparticles in Si: First-principles calculations

M. Nagase, A. Fujiwara, Y. Ono, 2008 .

Ferromagnetism of Manganese–Silicide Nanopariticles in Silicon

M. Nagase, A. Fujiwara, Y. Ono, 2008 .

Electrical activation and electron spin resonance measurements of arsenic implanted in silicon

A. Fujiwara, Y. Ono, M. Hori, 2015 .

Effect of the Si Õ SiO 2 interface on self-diffusion of Si in semiconductor-grade SiO 2

A. Fujiwara, U. Gösele, H. Kageshima, 2003 .

Transport characteristics in Au/pentacene/Au diodes

T. Someya, T. Yokota, A. Fujiwara, 2018 .

Fabrication and evaluation of series-triple quantum dots by thermal oxidation of silicon nanowire

Yasuo Takahashi, A. Fujiwara, M. Arita, 2015 .

Coupling capacitance between double quantum dots tunable by the number of electrons in Si quantum dots

Yasuo Takahashi, A. Fujiwara, M. Arita, 2015 .

Manipulation and detection of single electrons for future information processing

Hiroshi Inokawa, Yasuo Takahashi, Akira Fujiwara, 2005 .

Valley polarization assisted spin polarization in two dimensions

A. Fujiwara, X. Waintal, Y. Hirayama, 2015, Nature Communications.

Identification of single and coupled acceptors in silicon nano-field-effect transistors

A. Fujiwara, K. Nishiguchi, Y. Ono, 2007 .

Identification of Single and Coupled Acceptors in Silicon Nano Field-Effect Transistors

A. Fujiwara, K. Nishiguchi, Y. Ono, 2007 .

Picosecond coherent electron motion in a silicon single-electron source

A. Fujiwara, M. Kataoka, G. Yamahata, 2019, Nature Nanotechnology.

Gigahertz single-electron pumping in silicon with an accuracy better than 9.2 parts in 107

Stephen P. Giblin, Akira Fujiwara, A. Fujiwara, 2016 .

Manipulation of elementary charge in a silicon charge-coupled device

Yasuo Takahashi, Akira Fujiwara, Yasuo Takahashi, 2001, Nature.

Donor-based single electron pumps with tunable donor binding energy.

A. Fujiwara, G. P. Lansbergen, Y. Ono, 2012, Nano letters.

Calibration of Sensitive Ammeters Using a Noiseless Electron Pump

A. Fujiwara, S. Giblin, M. Kataoka, 2020, 2020 Conference on Precision Electromagnetic Measurements (CPEM).

Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor

K. Itoh, A. Fujiwara, K. Nishiguchi, 2008 .

Evidence for universality of tunable-barrier electron pumps

M. Bae, A. Fujiwara, S. Giblin, 2019, Metrologia.

Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor

A. Fujiwara, K. Nishiguchi, Y. Ono, 2008 .

Understanding the mechanism of tunable-barrier single-electron pumping: Mechanism crossover and optimal accuracy

A. Fujiwara, G. Yamahata, N. Johnson, 2021 .

Accuracy evaluation and mechanism crossover of single-electron transfer in Si tunable-barrier turnstiles

A. Fujiwara, K. Nishiguchi, G. Yamahata, 2014 .

Accuracy evaluation of single-electron shuttle transfer in Si nanowire metal-oxide-semiconductor field-effect transistors

A. Fujiwara, K. Nishiguchi, G. Yamahata, 2011 .

Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors

Yasuo Takahashi, Kenji Kurihara, Hideo Namatsu, 1998 .

Water electrolysis and energy harvesting with zero-dimensional ion-sensitive field-effect transistors.

A. Fujiwara, K. Nishiguchi, D. Vuillaume, 2013, Nano letters.

Evaluation of a Gate Capacitance in the Sub-aF Range for a Chemical Field-Effect Transistor With a Si Nanowire Channel

A. Fujiwara, K. Nishiguchi, D. Vuillaume, 2011, IEEE Transactions on Nanotechnology.

Spin splitting of upper electron subbands in a SiO2/Si(100)/SiO2 quantum well with in-plane magnetic field

A. Fujiwara, Y. Hirayama, T. Fujisawa, 2009 .

Planar cold cathode based on a multilayer-graphene/SiO2/Si heterodevice

M. Nagase, A. Fujiwara, K. Nishiguchi, 2016 .

Hydrogen Silsesquioxane‐Based Nanofluidics

A. Fujiwara, K. Nishiguchi, F. Vaurette, 2017 .

Quantum size effect of excitonic band-edge luminescence in strained Si1-xGex/Si single quantum well structures grown by gas-source Si molecular beam epitaxy

A. Fujiwara, N. Usami, S. Fukatsu, 1992 .

A correlated electromechanical system

A. Fujiwara, K. Nishiguchi, I. Mahboob, 2017 .

Hopf and period-doubling bifurcations in an electromechanical resonator

A. Fujiwara, K. Nishiguchi, I. Mahboob, 2016 .

Interconnect-free parallel logic circuits in a single mechanical resonator

I. Mahboob, K. Nishiguchi, H. Yamaguchi, 2011, Nature communications.

Estimation of π-π Electronic Couplings from Current Measurements.

A. Fujiwara, K. Smaali, D. Vuillaume, 2017, Nano letters.

Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

A. Fujiwara, G. Steele, K. Nishiguchi, 2015 .

Power generator driven by Maxwell's demon

A. Fujiwara, K. Nishiguchi, K. Chida, 2017, Nature Communications.

Capacitive Parameter Extraction for Nanometer-Size Field-Effect Transistors

H. Inokawa, A. Fujiwara, K. Nishiguchi, 2007 .

Current quantization due to single-electron transfer in Si-wire charge-coupled devices

Yasuo Takahashi, Akira Fujiwara, Yukinori Ono, 2004 .

Room-temperature several-hundred-of-megahertz charge sensing with single-electron resolution using a silicon transistor

A. Fujiwara, G. Steele, K. Nishiguchi, 2023, Applied Physics Letters.

Thermal-noise suppression in nano-scale Si field-effect transistors by feedback control based on single-electron detection

A. Fujiwara, K. Nishiguchi, K. Chida, 2015 .

Field-dependent hopping conduction

A. Fujiwara, Y. Tokura, T. Hayashi, 2018, Physica B: Condensed Matter.

Excellent charge offset stability in a Si-based single-electron tunneling transistor

Yasuo Takahashi, Akira Fujiwara, W. H. Huber, 2001 .

Study of Randomly Distributed Charge Traps by Measuring Frequency- and Time-Dependence of a DNTT-Based MIS Capacitor

T. Someya, T. Sekitani, A. Fujiwara, 2015, Journal of Display Technology.

Selective layer-free blood serum ionogram based on ion-specific interactions with a nanotransistor

A. Fujiwara, K. Nishiguchi, J. Dufrêche, 2018, Nature Materials.

Electric tuning of direct-indirect optical transitions in silicon

A. Fujiwara, K. Nishiguchi, J. Noborisaka, 2014, Scientific Reports.

Noise-to-energy conversion in a nanometer-scale dot observed with electron counting statistics

A. Fujiwara, K. Nishiguchi, K. Chida, 2023, Applied Physics Letters.

Capacitance evaluation of compact silicon triple quantum dots by simultaneous gate voltage sweeping

Yasuo Takahashi, A. Fujiwara, M. Arita, 2016 .

Evaluation of serially coupled triple quantum dots with a compact device structure by a simultaneous voltage-sweeping method

A. Fujiwara, Y. Takahashi, M. Arita, 2016, 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO).

Fabrication of double-dot single-electron transistor in silicon nanowire

Yasuo Takahashi, H. Inokawa, A. Fujiwara, 2009, SDM 2009.

Horizontal position analysis of single acceptors in Si nanoscale field-effect transistors

A. Fujiwara, K. Nishiguchi, Y. Ono, 2009 .

Silicon nanodot-array device with multiple gates

Hiroshi Inokawa, Yasuo Takahashi, Kenji Yamazaki, 2008 .

Double quantum dot Si single-electron transistor with multiple gate electrodes fabricated by PADOX *

Yasuo Takahashi, A. Fujiwara, M. Arita, 2013 .

Critical conductance of two-dimensional electron gas in silicon-on-insulator metal-oxide-semiconductor field-effect transistor

A. Fujiwara, Y. Ono, M. Hori, 2021, Applied Physics Express.

Manipulation of Single Charges Using Dopant Atoms in Silicon—Interplay with Intervalley Phonon Emission

A. Fujiwara, G. P. Lansbergen, Y. Ono, 2017 .

Charge offset stability in tunable-barrier Si single-electron tunneling devices

Yasuo Takahashi, H. Inokawa, A. Fujiwara, 2007 .

OBSERVATION OF SINGLE ELECTRON-HOLE RECOMBINATION AND PHOTON-PUMPED CURRENT IN AN ASYMMETRIC SI SINGLE-ELECTRON TRANSISTOR

Yasuo Takahashi, Akira Fujiwara, Katsumi Murase, 1997 .

Ultra-low noise nanoscale transistors for metrology of noise, energy harvesting and biosensing applications (Invited)

A. Fujiwara, K. Nishiguchi, G. Larrieu, 2015, 2015 International Conference on Noise and Fluctuations (ICNF).

Gigahertz single-trap electron pumps in silicon

A. Fujiwara, K. Nishiguchi, G. Yamahata, 2014, Nature Communications.

Precision measurement of an electron pump at 2 GHz; the frontier of small DC current metrology

A. Fujiwara, S. Giblin, M. Kataoka, 2023, Metrologia.

Realisation of a quantum current standard at liquid helium temperature with sub-ppm reproducibility

A. Fujiwara, M. Möttönen, M. Kataoka, 2019, Metrologia.

High-accuracy current generation in the nanoampere regime from a silicon single-trap electron pump

A. Fujiwara, S. Giblin, M. Kataoka, 2017, Scientific Reports.

A multiple-valued logic with merged single-electron and MOS transistors

H. Inokawa, A. Fujiwara, Y. Takahashi, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Low-Energy Electron Emission from an Electron Enversion Layer of a Si/SiO2/Si Cathode for Nano-Decomposition

M. Nagase, A. Fujiwara, K. Nishiguchi, 2008 .

Low-energy electron emission using a Si/SiO2/Si cathode for nano-decomposition

M. Nagase, A. Fujiwara, K. Nishiguchi, 2007, 2007 Digest of papers Microprocesses and Nanotechnology.

Single-cell Electrochemical Aptasensor Array

Soo Hyeon Kim, S. Li, A. Fujiwara, 2023, bioRxiv.

Detecting signals buried in noise via nanowire transistors using stochastic resonance

Akira Fujiwara, Katsuhiko Nishiguchi, A. Fujiwara, 2012 .

Multipeak negative-differential-resistance device by combining single-electron and metal–oxide–semiconductor transistors

Hiroshi Inokawa, Yasuo Takahashi, Akira Fujiwara, 2001 .

Cryogenic Operation of Electromechanical Relay for Reversal of Quantized Current Generated by a Single-Electron Pump

A. Fujiwara, N. Kaneko, S. Takada, 2023, IEEE Transactions on Instrumentation and Measurement.

Single-Electron Transfer in Si Nanowires

A. Fujiwara, K. Nishiguchi, G. Yamahata, 2015 .

Gigahertz single-hole transfer in Si tunable-barrier pumps

A. Fujiwara, G. Yamahata, T. Karasawa, 2015 .

Nanometrology of Si Nanostructures Embedded in SiO2 using Scanning Electron Microscopy

Kenji Kurihara, Hideo Namatsu, Akira Fujiwara, 2003 .

Electrical Characterization of Terphenyl-Based Molecular Devices

K. Torimitsu, H. Inokawa, A. Fujiwara, 2011 .

A Viewpoint on : Phonon Lasing in an Electromechanical Resonator

A. Fujiwara, K. Nishiguchi, I. Mahboob, 2014 .

Co-tunneling current in very small Si single-electron transistors

Yasuo Takahashi, S. Horiguchi, K. Murase, 1996 .

A multimode electromechanical parametric resonator array

I. Mahboob, M. Mounaix, K. Nishiguchi, 2014, Scientific Reports.

Coulomb collisions of hot and cold single electrons in series-coupled silicon single-electron pumps

A. Fujiwara, G. Yamahata, N. Johnson, 2023, Physical Review Applied.

Silicon nanowire MOSFETs for diverse applications: A review

A. Fujiwara, K. Nishiguchi, G. Yamahata, 2014, 2014 IEEE International Nanoelectronics Conference (INEC).

Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors with Small Subthreshold Swing Driven by Body-Bias Effect

A. Fujiwara, K. Nishiguchi, 2012 .

An electromechanical displacement transducer

A. Fujiwara, K. Nishiguchi, I. Mahboob, 2016 .

Ballistic Brownian Motion of Nanoconfined DNA.

S. Li, A. Fujiwara, K. Nishiguchi, 2023, ACS nano.

Bound exciton photoluminescence from ion‑implanted phosphorus in thin silicon layers.

A. Fujiwara, M. Notomi, K. Nishiguchi, 2011, Optics express.

Time-resolved measurement of single-electron tunneling in a Si single-electron transistor with satellite Si islands

Yasuo Takahashi, A. Fujiwara, Michiharu Tabe, 1995 .