J. Autran

J. Autran, D. Munteanu, S. Moindjie, 2019, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.

Characterization of atmospheric muons at sea level using a cosmic ray telescope

J. Autran, D. Munteanu, S. Moindjie, 2018, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.

Accurate Resolution of Time-Dependent and Circuit-Coupled Charge Transport Equations: 1-D Case Applied to 28-nm FD-SOI Devices

P. Roche, G. Gasiot, J. Autran, 2018, IEEE Transactions on Nuclear Science.

Atmospheric Neutron Radiation Response of III–V Binary Compound Semiconductors

J. Autran, D. Munteanu, 2019, IEEE Transactions on Nuclear Science.

Interactions between Terrestrial Cosmic-Ray Neutrons and III–V Compound Semiconductors

J. Autran, D. Munteanu, 2020, Modeling and Simulation in Engineering - Selected Problems.

Proton Flux Anisotropy in the Atmosphere: Experiment and Modeling

J. Autran, F. Wrobel, F. Saigné, 2012, IEEE Transactions on Nuclear Science.

SiO2 films deposited on silicon at low temperature by plasma-enhanced decomposition of hexamethyldisilazane: Defect characterization

J. Autran, M. Martini, G. Spinolo, 2001 .

Modeling of energy bands in ultra-thin layer quantum nanostructures for solar cell applications

J. Autran, D. Munteanu, 2011 .

Experimental Characterization of an Atmospheric Environment With a Stratospheric Balloon

J. Autran, P. Rech, F. Wrobel, 2011, IEEE Transactions on Nuclear Science.

Properties of amorphous and crystalline Ta2O5 thin films deposited on Si from a Ta(OC2H5)5 precursor

J. Autran, R. Devine, C. Chaneliere, 1998 .

Transient response of 3-D Multi-Channel nanowire MOSFETs submitted to heavy ion irradiation: A 3-D simulation study

J. Autran, D. Munteanu, 2008, 2008 European Conference on Radiation and Its Effects on Components and Systems.

User Level Integrity as an Enabler of GNSS Applications

A. L. Mark, J. Autran, S. Golmayo, 2006 .

Stretch-out of high-permittivity MOS capacitance-voltage curves resulting from a lateral non-uniform oxide charge distribution

J. Autran, D. Munteanu, M. Houssa, 2003 .

A new memory concept: the nano-multiple-tunnel-junction memory with embedded Si nano-crystals

S. Deleonibus, J. Autran, B. Desalvo, 2004 .

Electrical characterization of instabilities in 6H silicon carbide metal‐oxide‐semiconductor capacitors

G. Guillot, J. Autran, C. Jaussaud, 1994 .

Electrical characteristics of Ge/GeO x (N)/HfO 2 gate stacks

Marc Heyns, Andre Stesmans, Marc Meuris, 2005 .

Terrestrial neutron-induced single events in GaN

J. Autran, D. Munteanu, 2019, Microelectronics Reliability.

Susceptibility of Group-IV and III-V Semiconductor-Based Electronics to Atmospheric Neutrons Explored by Geant4 Numerical Simulations

J. Autran, D. Munteanu, 2017, Numerical Simulations in Engineering and Science.

Radiation-Hardened Cortex-R4F System-on-Chip Prototype With Total Ionizing Dose Dynamic Compensation in 28-nm FD-SOI

P. Roche, G. Gasiot, J. Autran, 2021, IEEE Transactions on Nuclear Science.

Single-Event Transient Space Characterizations in 28-nm UTBB SOI Technologies and Below

P. Roche, G. Gasiot, J. Autran, 2021, IEEE Transactions on Nuclear Science.

Simulation of hole phonon-velocity in strained Si/SiGe metal-oxide-semiconductor transistor

J. Autran, F. Payet, N. Cavassilas, 2004 .

Simulation study of performance limits for Si, Ge, GaAs ballistic nanowire MOSFETs

A. Asenov, K. Kalna, J. Autran, 2005 .

An Efficient Model for Accurate Capacitance-Voltage Characterization of High-k Gate Dielectrics Using a Mercury Probe

X. Garros, J. Autran, C. Leroux, 2002 .

Kubo-Greenwood approach for the calculation of mobility in gate-all-around nanowire metal-oxide-semiconductor field-effect transistors including screened remote Coulomb scattering—Comparison with experiment

S. Barraud, J. Autran, D. Munteanu, 2012 .

Frequency characterization and modeling of interface traps in HfSixOy/HfO2 gate dielectric stack from a capacitance point-of-view

Pascal Masson, Michel Houssa, Xavier Garros, 2002 .

A 2.7 pJ/cycle 16 MHz, 0.7 $\mu\text{W}$ Deep Sleep Power ARM Cortex-M0+ Core SoC in 28 nm FD-SOI

Fady Abouzeid, Jean-Marc Daveau, Philippe Roche, 2018, IEEE Journal of Solid-State Circuits.

A 2.7pJ/cycle 16MHz SoC with 4.3nW power-off ARM Cortex-M0+ core in 28nm FD-SOI

Fady Abouzeid, Jean-Marc Daveau, Philippe Roche, 2017, ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference.

Natural radiation events in CCD imagers at ground level

Jean-Luc Autran, Daniela Munteanu, S. Moindjie, 2016, Microelectron. Reliab..

Use of CCD to Detect Terrestrial Cosmic Rays at Ground Level: Altitude vs. Underground Experiments, Modeling and Numerical Monte Carlo Simulation

L. Dilillo, F. Wrobel, D. Munteanu, 2014, IEEE Transactions on Nuclear Science.

Fabrication and characterization of Si-MOSFET's with PECVD amorphous Ta 2 O 5 gate insulator

B. Balland, Jean-Luc Autran, J. Autran, 1997 .

An Overview of Buried Oxides on Silicon: New Processes and Radiation Effects

J. Leray, P. Paillet, J. Autran, 1996 .

Radiation Effects in Thin-Film Ferroelectric PZT for Non-Volatile Memory Applications in Microelectronics

Philippe Paillet, Jean-Luc Leray, Olivier Musseau, 1997 .

Atomic-scale modeling of source-to-drain tunneling in ultimate Schottky barrier double-gate MOSFETs

J. Autran, D. Munteanu, M. Lannoo, 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

Modeling and Simulation of Single-Event Effects in Digital Devices and ICs

D. Munteanu, J.-L. Autran, J. Autran, 2008, IEEE Transactions on Nuclear Science.

Comparison of trapping–detrapping properties of mobile charge in alkali contaminated metal‐oxide‐silicon carbide structures

J. Autran, C. Jaussaud, C. Raynaud, 1995 .

Comparative hot carrier induced degradation in 0,25 um MOSFETs with H or D passivated interfaces

J. Autran, W. L. Warren, R. Devine, 1997, 27th European Solid-State Device Research Conference.

Analysis of the charge sharing effect in the SET sensitivity of bulk 45 nm standard cell layouts under heavy ions

J.-L. Autran, Antoine D. Touboul, Frédéric Saigné, 2018, Microelectron. Reliab..

Influence of band-structure on electron ballistic transport in silicon nanowire MOSFET's: an atomistic study

D. Munteanu, N. Cavassilas, J. Autran, 2005, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

Theory of spin-dependent tunneling current in ferromagnetic metal–oxide–silicon structures

J. Autran, R. Hayn, S. Serdouk, 2007 .

Theoretical investigation of incomplete ionization of dopants in 6H–SiC metal-oxide-semiconductor capacitors

J. Autran, C. Raynaud, 1999 .

Microscopic model for dielectric constant in metal-insulator-metal capacitors with high-permittivity metallic oxides

S. Crémer, J. Autran, S. Bécu, 2006 .

3D quantum modeling and simulation of multiple-gate nanowire MOSFETs

D. Munteanu, N. Cavassilas, J. Autran, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Mitigation and Predictive Assessment of SET Immunity of Digital Logic Circuits for Space Missions

Vincent Pouget, Jean-Luc Autran, Y. Q. Aguiar, 2020, Aerospace.

Behavioral modeling of SRIM tables for numerical simulation

Sebastien Martinie, T. Saad-Saoud, S. Moindjie, 2014 .

Influence of quadratic mobility degradation factor on low frequency noise in MOS transistors

Jean Brini, Gerard Ghibaudo, P. Morfouli, 1998 .

Characterization of Si–SiO2 interface states: Comparison between different charge pumping and capacitance techniques

J. Autran, B. Balland, C. Plossu, 1993 .

Conduction properties of amorphous Ta2O5 films prepared by plasma enhanced chemical vapour deposition

J. Leray, P. Paillet, J. Autran, 1995 .

Soft Errors: From Particles to Circuits

Daniela Munteanu, Jean-Luc Autran, J. Autran, 2015 .

Radiation Characterization of a Backside-Illuminated P-Type Photo-MOS Pixel With Gamma Rays and Fusion-Induced Neutrons

M. Dentan, P. Roche, J. Autran, 2022, IEEE Transactions on Nuclear Science.

Dielectric Permittivity of Amorphous and Hexagonal Electron Cyclotron Resonance Plasma Deposited Ta2 O 5 Thin Films

J. Autran, R. Devine, C. Chaneliere, 1999 .

3-D Numerical Simulation of Bipolar Amplification in Junctionless Double-Gate MOSFETs Under Heavy-Ion Irradiation

Daniela Munteanu, Jean-Luc Autran, J. Autran, 2011, IEEE Transactions on Nuclear Science.

Properties of SiO2 films deposited on silicon at low temperatures by plasma enhanced decomposition of hexamethyldisilazane

J. Autran, P. Pinard, A. Pecheur, 1999 .

Radiation sensitivity of junctionless double-gate 6T SRAM cells investigated by 3-D numerical simulation

Jean-Luc Autran, Daniela Munteanu, J. Autran, 2014, Microelectron. Reliab..

Alpha soft error rate of FDSOI 28 nm SRAMs: Experimental testing and simulation analysis

Philippe Roche, Dimitri Soussan, Jean-Luc Autran, 2015, 2015 IEEE International Reliability Physics Symposium.

Impact of high-permittivity dielectrics on speed performances and power consumption in double-gate-based CMOS circuits

J. Autran, D. Munteanu, X. Loussier, 2007 .

Effects of localized gate stack parasitic charge on current-voltage characteristics of double-gate MOSFETs with high-permittivity dielectrics and Ge-channel

J. Autran, D. Munteanu, M. Moreau, 2011 .

Electron transport through high-κ dielectric barriers: A non-equilibrium Green’s function (NEGF) study

J. Autran, D. Munteanu, M. Houssa, 2009 .

A simulation analysis of FIBL in decananometer Double-Gate MOSFETs with high-κ gate dielectrics

J. Autran, D. Munteanu, M. Houssa, 2005 .

Simulation of Gate Tunneling Current in Metal–Insulator–Metal Capacitor with Multi layer High-κ Dielectric Stack Using the Non-equilibrium Green's Function Formalism

J. Autran, D. Munteanu, M. Moreau, 2009 .

Electrical properties of Ta2O5 films obtained by plasma enhanced chemical vapor deposition using a TaF5 source

J. Leray, P. Paillet, J. Autran, 1996 .

Use of carbon-free Ta2O5 thin-films as a gate insulator

J. Leray, P. Paillet, J. Autran, 1997 .

Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs

A. Asenov, N. Cavassilas, L. Raymond, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

90 nm SRAM Static and Dynamic Mode Real-Time Testing at Concordia Station in Antarctica

G. Tsiligiannis, L. Dilillo, A. Bosio, 2014, IEEE Transactions on Nuclear Science.

Single-event-transient effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate investigated by 3D simulation

Jean-Luc Autran, Daniela Munteanu, S. Moindjie, 2017, Microelectron. Reliab..

3D simulation of single-event-transient effects in symmetrical dual-material double-gate MOSFETs

Jean-Luc Autran, Daniela Munteanu, J. Autran, 2015, Microelectron. Reliab..

Real-time soft-error rate measurements: A review

Philippe Roche, Jean-Luc Autran, Daniela Munteanu, 2014, Microelectron. Reliab..

Effect of 60 Co irradiation and Fowler-Nordheim injection on MOS capacitors with thin plasma nitrided gate oxides

D. Babot, J. Autran, B. Balland, 1995 .

Extraction and evolution of Fowler-Nordheim tunneling parameters of thin gate oxides under EEPROM-like dynamic degradation

P. Boivin, C. Raynaud, C. Plossu, 1999 .

Modelling and simulation of SEU in bulk Si and Ge SRAM

J. Autran, D. Munteanu, S. Moindjie, 2019, Microelectronics Reliability.

Charge Collection Physical Modeling for Soft Error Rate Computational Simulation in Digital Circuits

Sylvain Clerc, Daniela Munteanu, Gilles Gasiot, 2016 .

SEU sensitivity of Junctionless Single-Gate SOI MOSFETs-based 6T SRAM cells investigated by 3D TCAD simulation

Jean-Luc Autran, Daniela Munteanu, J. Autran, 2015, Microelectron. Reliab..

Random-Walk Drift-Diffusion Charge-Collection Model For Reverse-Biased Junctions Embedded in Circuits

G. Gasiot, P. Roche, D. Munteanu, 2014, IEEE Transactions on Nuclear Science.

Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits

Sylvain Clerc, Philippe Roche, Jean-Luc Autran, 2014, Microelectron. Reliab..

Computational Modeling and Monte Carlo Simulation of Soft Errors in Flash Memories

PhilippeRoche, G. Gasiot, J. Autran, 2014 .

Soft errors induced by natural radiation at ground level in floating gate flash memories

G. Gasiot, P. Roche, D. Munteanu, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

Soft-Error Rate Induced by Thermal and Low Energy Neutrons in 40 nm SRAMs

G. Gasiot, D. Munteanu, S. Semikh, 2012, IEEE Transactions on Nuclear Science.

Soft-Error Rate of Advanced SRAM Memories: Modeling and Monte Carlo Simulation

Philippe Roche, Daniela Munteanu, Gilles Gasiot, 2012 .

Combining GEANT4 and TIARA for Neutron Soft Error-Rate Prediction of 65 nm Flip-Flops

G. Gasiot, S. Uznanski, S. Semikh, 2011, IEEE Transactions on Nuclear Science.

Monte-Carlo Based Charge Sharing Investigations on a Bulk 65 nm RHBD Flip-Flop

S Uznanski, G Gasiot, P Roche, 2010, IEEE Transactions on Nuclear Science.

3D Quantum Numerical Simulation of Single-Event Transients in Multiple-Gate Nanowire MOSFETs

D. Munteanu, J. Baggio, P. Paillet, 2007, IEEE Transactions on Nuclear Science.

On-Orbit Upset Rate Prediction at Advanced Technology Nodes: a 28 nm FD-SOI Case Study

Philippe Roche, Dimitri Soussan, Gilles Gasiot, 2017, IEEE Transactions on Nuclear Science.

Geant4 Analysis of n-Si Nuclear Reactions From Different Sources of Neutrons and Its Implication on Soft-Error Rate

G. Gasiot, D. Munteanu, S. Uznanski, 2012, IEEE Transactions on Nuclear Science.

Real-Time Characterization of Neutron-Induced SEUs in Fusion Experiments at WEST Tokamak During D-D Plasma Operation

M. Dentan, J. Bucalossi, P. Roche, 2022, IEEE Transactions on Nuclear Science.

Towards a full microscopic approach to the modeling of transistors with nanometer dimensions

J. Autran, M. Lannoo, M. Bescond, 2003 .

Investigation of Quantum Effects in Ultra-Thin Body Single- and Double-Gate Devices Submitted to Heavy Ion Irradiation

O. Faynot, L. Tosti, C. Jahan, 2006, IEEE Transactions on Nuclear Science.

Reliability assessment of ultra-thin HfO/sub 2/ oxides with TiN gate and polysilicon-n/sup +/ gate

X. Garros, C. Leroux, F. Martin, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

Technology downscaling worsening radiation effects in bulk: SOI to the rescue

Philippe Roche, Daniela Munteanu, Gilles Gasiot, 2013, 2013 IEEE International Electron Devices Meeting.

Simulation analysis of the bipolar amplification in fully-depleted SOI technologies under heavy-ion irradiations

D. Munteanu, K. Castellani-Coulie, V. Ferlet-Cavrois, 2005, IEEE Transactions on Nuclear Science.

Experimental Investigation on the Quasi-Ballistic Transport: Part II—Backscattering Coefficient Extraction and Link With the Mobility

S. Deleonibus, V. Barral, D. Munteanu, 2009, IEEE Transactions on Electron Devices.

Muons and thermal neutrons SEU characterization of 28nm UTBB FD-SOI and Bulk eSRAMs

Philippe Roche, Dimitri Soussan, Jean-Luc Autran, 2015, 2015 IEEE International Reliability Physics Symposium.

Interactions of Low-Energy Muons with Silicon: Numerical Simulation of Negative Muon Capture and Prospects for Soft Errors

J. Autran, Daniela Munteanu, 2022 .

Challenges in Interface Trap Characterization of Deep Sub-Micron MOS Devices Using Charge Pumping Techniques

Gerard Ghibaudo, Pascal Masson, Jean-Luc Autran, 1999 .

75 nm damascene metal gate and high-k integration for advanced CMOS devices

X. Garros, S. Deleonibus, C. Leroux, 2002, Digest. International Electron Devices Meeting,.

Study of hot carrier degradation in DRAM cells combining random telegraph signal and charge pumping measurements

J. Autran, D. Pogany, B. Leroy, 1999 .

On the tunneling component of charge pumping current in ultrathin gate oxide MOSFETs

J. Brini, P. Masson, J. Autran, 1999, IEEE Electron Device Letters.

Charge pumping analysis of radiation effects in LOCOS parasitic transistors

O. Faynot, O. Flament, R. Truche, 1997 .

Location of individual traps in DRAM cell transistors by charge pumping technique

J. Autran, B. Balland, B. Leroy, 1997 .

Radiation-induced interface traps in hardened MOS transistors: an improved charge-pumping study

O. Flament, J.-C. Boudenot, P. Paillet, 1996 .

Use of the charge pumping technique with a sinusoidal gate waveform

C. Chabrerie, J. Autran, J. L. Autran, 1996 .

A new third‐level charge pumping method for accurate determination of interface‐trap parameters in metal‐oxide‐semiconductor field‐effect‐transistors

B. Balland, Jean-Luc Autran, J. Autran, 1994 .

Deposition and Characterization of Ultrathin Ta 2 O 5 Layers Deposited on Silicon From a Ta(OC 2 H 5 ) 5 Precursor

K. Barla, J. Michailos, J. Autran, 1999 .

Trapping-detrapping properties of irradiated ultra-thin SIMOX buried oxides

P. Paillet, Jean-Luc Leray, B. Aspar, 1995 .