Q. Hong

发表

A sub-0.1 /spl mu/m gate length CMOS technology for high performance (1.5 V) and low power (1.0 V)

I. Chen, S. Aur, Q. Hong, 1996, International Electron Devices Meeting. Technical Digest.

The thermal stability of multilayered TiN/AICu/TiN interconnect metallization and its

Q. Hong, L. Ting, 2017 .

Intermetallic formation in copper/magnesium thin films—kinetics, nucleation and growth, and effect of interfacial oxygen

B. Arcot, S. Murarka, Q. Hong, 1994 .

Interdiffusion and reaction in Cu/PtSi/Si(100) systems

Q. Hong, J. Li, J. Mayer, 1994 .

Phase Formation in Cu(Sn) Alloy Thin Films

F. d'Heurle, C. Cabral, E. Colgan, 1996 .

Ion mixing of near‐noble monosilicides with Si substrates

Q. Hong, L. Hung, J. Mayer, 1989 .

Texture‐induced asymmetric reactions in TiN/Al–Cu/TiN

S. Jeng, H. Tsai, Q. Hong, 1995 .

Thermal and ion induced silicide formation

Q. Hong, L. Hung, J. Mayer, 1989 .

Pt4Si9 formation by hot substrate ion beam mixing

Q. Hong, L. Hung, J. Mayer, 1988 .

Thermally and ion-induced reaction between Si and binary metallic alloys

Q. Hong, L. Hung, J. Mayer, 1988 .

Temperature and substrate dependence of Ar sputtering of CoSi2 thin films

Q. Hong, J. Harper, 1992 .

Formation of a C49 TiGe2 phase during annealing a coevaporated Ti0.33Ge0.67 alloy

F. d'Heurle, Q. Hong, K. Barmak, 1993 .

Composition control and growth mechanisms in solid phase epitaxy of GeSi in GexSi1−x/Pd2Si/Si systems

Q. Hong, J. Mayer, 1993 .

Thermal reaction between Pt thin films and SixGe1−x alloys

Q. Hong, J. Mayer, 1989 .

Initial Phase Formation and Distribution in the Pt-Ge x Si 1−x and Cr-Ge x Si 1−x Systems

Q. Hong, J. Mayer, 1990 .

Formation and stability of silicides on polycrystalline silicon

J. Gambino, Q. Hong, E. Colgan, 1996 .

The dominant diffusing species and initial phase formation in Al-Cu, Mg-Cu, and Mg-Ni systems

F. d'Heurle, Q. Hong, 1992 .

Salicides: materials, scaling and manufacturability issues for future integrated circuits

J. Kittl, Q. Hong, W. Shiau, 1999 .

Composition Dependence of Crystallization of Co-Si Alloys

Q. Hong, K. Barmak, L. Clevenger, 1992 .

Thermal and ion‐induced, metastable‐cubic Al3M phases in Al‐Ti and Al‐Hf thin films

Q. Hong, J. Mayer, D. Lilienfeld, 1988 .

Advanced salicides for 0.10 μm CMOS: Co salicide processes with low diode leakage and Ti salicide processes with direct formation of low resistivity C54 TiSi2

J. Kittl, Q. Hong, M. Gribelyuk, 1998 .

Diffusion and Phase Formation During Combined Heating and Sputter Etching

Q. Hong, J. Harper, R. Kelly, 1991 .

Crystallization of coevaporated and ion‐irradiated amorphous CoSi2

Q. Hong, K. Barmak, L. Clevenger, 1993 .

Crystallization of amorphous Co‐Si alloys

Q. Hong, K. Barmak, L. Clevenger, 1992 .

Thermal stability of silicide on polycrystalline Si

F. d'Heurle, Q. Hong, J. Harper, 1994 .

Ion mixing in amorphous and crystalline Si/Ge layered structures

S. Mantl, Q. Hong, L. Jian, 1991 .

Thermally and ion‐induced phase formation in a Pd/Ge bilayer

Q. Hong, J. Li, J. Mayer, 1989 .

Effects of Ion Implantation on Crystallization of Amorphous CoSi 2

Q. Hong, K. Barmak, L. Clevenger, 1992 .

Ge Transport and Epitaxy on [111] Si in the Ge/Pd 2 Si/Si System

Q. Hong, J. Zhu, J. Mayer, 1989 .

Solid phase epitaxy of a Ge‐Si alloy on [111] Si through a Pd2Si layer

Q. Hong, J. Mayer, Jane G. Zhu, 1989 .

Thermal stability of PtSi contact to GexSi1−x

C. B. Carter, Q. Hong, J. Mayer, 1991 .

Interfacial reaction between a Ni/Ge bilayer and silicon (100)

Q. Hong, J. Mayer, L. Rathbun, 1990 .

Solid phase epitaxy of stressed and stress‐relaxed Ge‐Si alloys

Q. Hong, J. Zhu, S. Lau, 1992 .

Stresses and morphological instabilities in silicide/polycrystalline Si layered structures

F. d'Heurle, Q. Hong, J. Harper, 1993 .

Scaled CMOS technologies with low sheet resistance at 0.06-μm gate lengths

J. Kittl, M. Rodder, Q. Hong, 1998, IEEE Electron Device Letters.

Interdiffusion and phase formation in Cu(Sn) alloy films

Evan G. Colgan, T. A. Gallo, Lawrence A. Clevenger, 1998 .

Effects of grown‐in stress on the metastable solid solubility limits in Sb implanted Ge0.1Si0.9 alloys

Q. Hong, J. Mayer, S. Hong, 1993 .

Regrowth rates and dopant activation of Sb+‐implanted Si‐Ge alloys

Q. Hong, J. Mayer, S. Hong, 1992 .

Solid Phase Epitaxy of Ge x Si 1-x Alloys on [100] Si

J. Poate, Q. Hong, D. Eaglesham, 1989 .

Low resistance Ti or Co salicided raised source/drain transistors for sub-0.13 /spl mu/m CMOS technologies

M. Nandakumar, J. Kittl, K. Violette, 1997, International Electron Devices Meeting. IEDM Technical Digest.

CoSi/sub 2/ with low diode leakage and low sheet resistance at 0.065 /spl mu/m gate length

J. Kittl, H. Tsai, I. Chen, 1997, International Electron Devices Meeting. IEDM Technical Digest.

The C49 to C54-TiSi2 transformation in self-aligned silicide applications

Randy W. Mann, Q. Z. Hong, Lawrence A. Clevenger, 1993 .

Self-aligned Ti and Co silicides for high performance sub-0.18 μm CMOS technologies

J. Kittl, Q. Hong, 1998 .

Thermal stability of Al/barrier/TiSix multilayer structures

J. D. Luttmer, Q. Hong, G. Dixit, 1998 .

Novel Diffusion Barrier with Ultra-Thin Silicon Nitride Cap Layer

J. D. Luttmer, H. Tsai, Q. Hong, 1998 .

A novel 0.25 /spl mu/m via plug process using low temperature CVD Al/TiN

Ashok K. Sinha, Girish A. Dixit, Moshe Eizenberg, 1995, Proceedings of International Electron Devices Meeting.

A 65 nm CMOS technology for mobile and digital signal processing applications

D. Mosher, H. Mair, D. Scott, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..