S. Hattangady

发表

A 0.10 /spl mu/m gate length CMOS technology with 30 /spl Aring/ gate dielectric for 1.0 V-1.5 V applications

I. Chen, D. Rogers, A. Amerasekera, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Assessment of charge-induced damage to ultra-thin gate MOSFETs

M. Rodder, S. Hattangady, S. Krishnan, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Silicon Oxynitride and Oxide-Nitride-Oxide Gate Dielectrics by Combined Plasma-Rapid Thermal Processing

G. Lucovsky, S. Hattangady, T. Yasuda, 1994 .

Extending the reliability scaling limit of SiO/sub 2/ through plasma nitridation

D. T. Grider, W. Hunter, M. Rodder, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Effect of rf power on remote-plasma deposited SiO2 films

G. Lucovsky, S. Hattangady, D. Temple, 1993 .

A comparison of TiN processes for CVD W/TiN gate electrode on 3 nm gate oxide

G.A. Brown, J. D. Luttmer, R. Chapman, 1997, International Electron Devices Meeting. IEDM Technical Digest.

The role of an ultrathin silicon interlayer at the SiO2‐Ge interface

S. Hattangady, R. Markunas, G. Fountain, 1992 .

CMOS metal replacement gate transistors using tantalum pentoxide gate insulator

G.A. Brown, A. Chatterjee, M. Rodder, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

Nitrogen Profile Engineering in Thin Gate Oxides

J. Kuehne, S. Hattangady, G. Miner, 1998 .

Nitric Oxide Rapid Thermal Nitridation of Thin Gate Oxides

J. Kuehne, S. Hattangady, G. Miner, 1997 .

Modeling and Optimization of Oxynitride Gate Dielectrics Formation by Remote Plasma Nitridation of Silicon Dioxide

S. Hattangady, M. Gribelyuk, R. Kraft, 1999 .

Monolayer Nitrogen-Atom Distributions in Ultrathin Gate Dielectrics by Low-Temperature Low-Thermal-Budget Processing

J. Hauser, G. Lucovsky, S. Hattangady, 1995 .

Evidence for the occurrence of subcutaneous oxidation during low temperature remote plasma enhanced deposition of silicon dioxide films

G. Lucovsky, S. Hattangady, R. Markunas, 1989 .

Low hydrogen content silicon nitride deposited at low temperature by novel remote plasma technique

S. Hattangady, R. Markunas, G. Fountain, 1989 .

Formation of Si–SiO2 stacked‐gate structures by plasma‐assisted and rapid‐thermal processing: Improved device performance through process integration

J. Wortman, V. Misra, G. Lucovsky, 1994 .

Depth Profile Analysis of Ultrathin Silicon Oxynitride Films by ToF‐SIMS

S. Hattangady, K. Eason, M. Douglas, 2000 .

Local atomic structure and electrical properties of nitrided SiSiO2 interfaces produced by low-temperature plasma processing and rapid thermal annealing, and explained by ab-initio quantum chemistry calculations

J. Hauser, G. Lucovsky, S. Hattangady, 1996 .

Gallium Arsenide Surface Inversion using a Novel Silicon–Silicon Dioxide Insulator Structure

S. Hattangady, R. Markunas, G. Fountain, 1988 .

Low‐temperature annealing of As‐implanted Ge

E. H. Nicollian, S. Hattangady, R. Markunas, 1988 .

In-Situ Surface Cleaning of Ge(111) and Si(100) for Epitaxial Growth of Ge AT 300°C Using Remote Plasma Enhanced Chemical Vapor Deposition

S. Hattangady, R. Markunas, D. Vitkavage, 1987 .

Chemical Etching of Ge for Differential Hall Measurements

E. H. Nicollian, S. Hattangady, R. Markunas, 1987 .

In situ cleaning of GaAs surfaces using hydrogen dissociated with a remote noble‐gas discharge

S. Hattangady, J. Posthill, R. Markunas, 1990 .

Carbon and oxygen removal from silicon (100) surfaces by remote plasma cleaning techniques

R. E. Thomas, R. A. Rudder, M. J. Mantini, 1992 .

Studies of SiH2Ci2/H2 Gas Phase Chemistry for Selective Thin Film Growth of Crystalline Silicon, c-Si, Using Remote Plasma Enhanced Chemical Vapor Deposition

G. Lucovsky, S. Hattangady, R. Markunas, 1991 .

On the feasibility of growing dilute CxSi1−x epitaxial alloys

S. Hattangady, J. Posthill, R. Markunas, 1990 .

Integrated processing of silicon oxynitride films by combined plasma and rapid‐thermal processing

G. Lucovsky, S. V. Hattangady, G. Lucovsky, 1996 .

Low-temperature plasma-assisted oxidation of Si: a new approach for creation of device-quality SiSiO2 interfaces with deposited dielectrics for applications in Si MOSFET technologies

J. Wortman, V. Misra, G. Lucovsky, 1994 .

Control of Si-SiO 2 Interface Properties in MOS Devices Prepared by Plasma-Assisted and Rapid Thermal Processes

Veena Misra, B. Hornung, G. Lucovsky, 1993 .

An alternative Mg precursor for p-type doping of OMVPE grown material

S. Hattangady, M. Timmons, P. Chiang, 1986 .

GaAs MIS structures with SiO2 using a thin silicon interlayer

S. Hattangady, R. Markunas, D. Vitkavage, 1988 .

Heteroepitaxial Nucleation and Growth of Ge ON Si(100) Surfaces Using Remote Plasma Enhanced Chemical Vapor Deposition

S. Hattangady, R. Markunas, D. Vitkavage, 1988 .

Physical oxide thickness extraction and verification using quantum mechanical simulation

G. Klimeck, A. Chatterjee, Gerhard Klimeck, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Security in embedded systems: Design challenges

Srivaths Ravi, Anand Raghunathan, Paul C. Kocher, 2004, TECS.

Physical Oxide Extraction and Versification using Quantum Mechanical Simulation

Gerhard Klimeck, A. Chatterjee, R. Lake, 1997 .

Microstructural and Optical Characterization of GaN Films Grown by PECVD on (0001) Sapphire Substrates

S. Hattangady, R. Nemanich, J. Posthill, 1989 .

Low interface state density SiO2 deposited at 300 °C by remote plasma‐enhanced chemical vapor deposition on reconstructed Si surfaces

S. Hattangady, R. Markunas, G. Fountain, 1988 .

Effects of NH3 and N2 source gases and plasma excitation frequencies on the reaction chemistry for Si3N4 thin‐film growth by remote plasma‐enhanced chemical‐vapor deposition

G. Lucovsky, S. Hattangady, J. Theil, 1992 .

Inversion of n‐Type GaAs Surfaces Using a Silicon‐Silicon Dioxide Insulator Structure

S. Hattangady, R. Markunas, G. Fountain, 1989 .

Interface engineering with pseudormorphic interlayers: Ge metal‐insulator‐semiconductor structures

S. Hattangady, R. Markunas, G. Fountain, 1990 .

Gating of germanium surfaces using pseudomorphic silicon interlayers

R. A. Rudder, S. V. Hattangady, S. Hattangady, 1988 .

Surface nitridation of silicon dioxide with a high density nitrogen plasma

S. Hattangady, R. Kraft, T. P. Schneider, 1997 .

Securing mobile appliances: new challenges for the system designer

Srivaths Ravi, Anand Raghunathan, Jean-Jacques Quisquater, 2003, 2003 Design, Automation and Test in Europe Conference and Exhibition.

Heteroepitaxial C x Si l−X /Si(100) Metastable Alloys

S. Hattangady, R. Nemanich, J. Posthill, 1990 .

Characterization of epitaxial Ge films grown by remote plasma enhanced chemical vapor deposition on Ge(111) and GaAs(111) substrates

S. Hattangady, J. Posthill, R. Markunas, 1989 .

Feasibility of using W/TiN as metal gate for conventional 0.13 /spl mu/m CMOS technology and beyond

A. Chatterjee, M. Rodder, R. Chapman, 1997, International Electron Devices Meeting. IEDM Technical Digest.

An Ellipsometric Measurement of Optical Properties for InP Surfaces

S. Hattangady, G. Fountain, E. Irene, 1990 .

GaAs Heteroepitaxy on Substrate-Engineered Silicon Using Si x Ge 1–x Multilayer Structures

S. Hattangady, R. Venkatasubramanian, J. Posthill, 1990 .

300° C Processing of Si Using Remote Plasma Techniques for In Situ Cleaning, Epitaxy, and Oxide/Nitride/Oxide Depositions

S. Hattangady, J. Posthill, R. Markunas, 1989 .

Low voltage stress-induced-leakage-current in ultrathin gate oxides

Robert M. Wallace, Mark S. Rodder, Sunil V. Hattangady, 1999, 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296).

Controlled nitrogen incorporation at the gate oxide surface

G. Lucovsky, S. V. Hattangady, G. Lucovsky, 1995 .

Demonstration of an n-channel inversion mode GaAs MISFET

J. Hutchby, S. Hattangady, R. Markunas, 1989, International Technical Digest on Electron Devices Meeting.