Gossmann

发表

Arsenic atom location on passivated silicon (111) surfaces.

Patel, Golovchenko, Freeland, 1987, Physical review. B, Condensed matter.

Excitation energies from time-dependent density-functional theory.

Gross, Gossmann, Petersilka, 1996, Physical review letters.

Limiting thickness hepi for epitaxial growth and room-temperature Si growth on Si(100).

Eaglesham, Cerullo, Gossmann, 1990, Physical review letters.

Strain in ultrathin epitaxial films of Ge/Si(100) measured by ion scattering and channeling.

Davidson, Gossmann, J. Mannaerts, 1987, Physical review letters.

Excitation energies from time-dependent density-functional theory.

Gross, K. Burke, M. Petersilka, 1996, Physical review letters.

Defect identification using the core-electron contribution in Doppler-broadening spectroscopy of positron-annihilation radiation.

Peng, Lynn, Hayakawa, 1996, Physical review. B, Condensed matter.

7 x 7 reconstruction of Ge(111) surfaces under compressive strain.

Robinson, Bean, Gossmann, 1985, Physical review letters.

Initial stages of silicon molecular-beam epitaxy: Effects of surface reconstruction.

Gossmann, Feldman, 1985, Physical review. B, Condensed matter.

Time-dependent optimized effective potential.

Ullrich, Gross, Gossmann, 1995, Physical review letters.

Preservation of a 7 x 7 periodicity at a buried amorphous Si/Si(111) interface.

Tung, Bean, Gossmann, 1986, Physical review letters.

Distribution of point defects in Si(100)/Si grown by low-temperature molecular-beam epitaxy and solid-phase epitaxy.

Lynn, Leung, Au, 1993, Physical review. B, Condensed matter.