J. van den Hurk

Realization of Boolean Logic Functionality Using Redox‐Based Memristive Devices

S. Menzel, R. Waser, E. Linn, 2015 .

Nanobatteries in redox-based resistive switches require extension of memristor theory

Jan van den Hurk, R. Waser, S. Tappertzhofen, 2013, Nature Communications.

Redox Reactions at Cu,Ag/Ta2O5 Interfaces and the Effects of Ta2O5 Film Density on the Forming Process in Atomic Switch Structures

R. Waser, S. Tappertzhofen, I. Valov, 2015 .

A compact and low-weight sputtering unit for in situ investigations of thin film growth at synchrotron radiation beamlines.

J. van den Hurk, P. Walter, A. Dippel, 2015, The Review of scientific instruments.

Physical origins and suppression of Ag dissolution in GeS(x)-based ECM cells.

Rainer Waser, Ilia Valov, Jan van den Hurk, 2014, Physical chemistry chemical physics : PCCP.

Direct Observation of Charge Transfer in Solid Electrolyte for Electrochemical Metallization Memory

Rainer Waser, Stefan Tappertzhofen, Ilia Valov, 2012, Advanced materials.

Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches

Rainer Waser, Eike Linn, Ilia Valov, 2014, Nanotechnology.

Ag/GeSx/Pt-based complementary resistive switches for hybrid CMOS/Nanoelectronic logic and memory architectures

Rainer Waser, Eike Linn, Ilia Valov, 2013, Scientific Reports.

Simulation of polarity independent RESET in electrochemical metallization memory cells

S. Menzel, R. Waser, S. Tappertzhofen, 2013, 2013 5th IEEE International Memory Workshop.