Jungwoo Oh

发表

Prospect of tunneling green transistor for 0.1V CMOS

C. Hu, T. Liu, A. Javey, 2010, 2010 International Electron Devices Meeting.

Si tunnel transistors with a novel silicided source and 46mV/dec swing

C. Hu, T. Liu, P. Patel, 2010, 2010 Symposium on VLSI Technology.

Highly scaled (Lg ∼ 56 nm) gate-last Si tunnel field-effect transistors with ION > 100 μA/μm

C. Hu, T. Liu, K. Jeon, 2011 .

Critical role of thulium metal interlayer in ultra-low contact resistance reduction in Ni-InGaAs/n-InGaAs for n-MOSFETs

H. Lee, Jungwoo Oh, S. B. Eadi, 2019, Vacuum.

The challenges and progress of USJ formation & process integration for 32nm technology and beyond

T. Liu, Jungwoo Oh, P. Majhi, 2008, Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08).

Thermal Immune Ni Germanide for High Performance Ge MOSFETs on Ge -on- Si Substrate Utilizing $ \hbox{Ni}_{0.95}\hbox{Pd}_{0.05}$ Alloy

Won-Ho Choi, R. Jammy, Zhun Zhong, 2009 .

Improved Ge Surface Passivation With Ultrathin $ \hbox{SiO}_{X}$ Enabling High-Mobility Surface Channel pMOSFETs Featuring a HfSiO/WN Gate Stack

J.C. Lee, Hsing-Huang Tseng, Byoung Hun Lee, 2007, IEEE Electron Device Letters.

A Study of the Dependence of Effective Schottky Barrier Height in Ni Silicide/n-Si on the Thickness of the Antimony Interlayer for High Performance n-channel MOSFETs

H. Lee, Jungwoo Oh, Meng Li, 2015 .

Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation

W. Loh, Jungwoo Oh, P. Majhi, 2009, IEEE Electron Device Letters.

Thermal desorption of Ge native oxides and loss of Ge from the surface

J. Campbell, Jungwoo Oh, 2010 .

Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs

H. Lee, Ga-Won Lee, Jungwoo Oh, 2020, Scientific Reports.

Thermally Robust Ni Germanide Technology Using Cosputtering of Ni and Pt for High-Performance Nanoscale Ge MOSFETs

H. Lee, Ga-Won Lee, Min-Ho Kang, 2012, IEEE Transactions on Nanotechnology.

Improvement of Thermal Stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge Metal–Oxide–Semiconductor Field Effect Transistors

H. Lee, Ga-Won Lee, Min-Ho Kang, 2012 .

Improvement of thermal stability of Ni-germanide with co-sputtering of nickel and palladium for high performance Ge CMOSFET

H. Lee, Min-Ho Kang, Jungwoo Oh, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

Ni Germanide Utilizing Ytterbium Interlayer for High-Performance Ge MOSFETs

H. Lee, Ga-Won Lee, Jungwoo Oh, 2009 .

High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility

Injo Ok, Hi-Deok Lee, Jeff Huang, 2010, IEICE Trans. Electron..

Effectiveness of SiGe Buffer Layers in Reducing Dark Currents of Ge-on-Si Photodetectors

S.K. Banerjee, Jungwoo Oh, J.C. Campbell, 2007, IEEE Journal of Quantum Electronics.

Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide

H. Lee, Jungwoo Oh, P. Majhi, 2010 .

Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

H. Lee, S. M. Lee, Jungwoo Oh, 2017 .

Evaluation of titanium disilicide/copper Schottky gate for AlGaN/GaN high electron mobility transistors

H. Lee, S. M. Lee, Jungwoo Oh, 2017 .

Localized TiSi and TiN phases in Si/Ti/Al/Cu Ohmic contacts to AlGaN/GaN heterostructures

H. Lee, S. M. Lee, Jungwoo Oh, 2016 .

Novel Capacitorless Single-Transistor Charge-Trap DRAM (1T CT DRAM) Utilizing Electrons

K. Saraswat, P. Kirsch, Jungwoo Oh, 2010, IEEE Electron Device Letters.

Process driven oxygen redistribution and control in Si0.7Ge0.3/HfO2/TaN gate stack film systems

J. Woicik, P. Kirsch, Jungwoo Oh, 2011 .

Microstructural Innovation of Ni Germanide on Ge-on-Si Substrate by Using Palladium Incorporation

H. Lee, Ga-Won Lee, Chel-Jong Choi, 2009 .

Effects of Film Stress Modulation Using TiN Metal Gate on Stress Engineering and Its Impact on Device Characteristics in Metal Gate/High- $k$ Dielectric SOI FinFETs

Moon J. Kim, B. Lee, R. Choi, 2008, IEEE Electron Device Letters.

Nickel Film Deposition with Varying RF Power for the Reduction of Contact Resistance in NiSi

Oh, Song, Jungwoo Oh, 2019, Coatings.

Crystalline beryllium oxide on Si (100) deposited using E-beam evaporator and thermal oxidation

H. Lee, S. M. Lee, Jungwoo Oh, 2019, Applied Surface Science.

Phase Separation of Ni Germanide Formed on a Ge-on-Si Structure for Ge MOSFETs

H. Lee, Ga-Won Lee, B. Lee, 2008 .

CMOS Scaling with III-V Channels for Improved Performance and Low Power

P. Kirsch, W. Loh, Jungwoo Oh, 2011 .

Improved Electrical Characteristics of Ge-on-Si Field-Effect Transistors With Controlled Ge Epitaxial Layer Thickness on Si Substrates

C. Kang, Jungwoo Oh, P. Majhi, 2007, IEEE Electron Device Letters.

Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs

H. Lee, Ga-Won Lee, Jungwoo Oh, 2020, Scientific Reports.

Microstructural characterization of Au-free Si/Ti/Al/Cu ohmic contacts in an AlGaN/GaN heterostructure

Jungwoo Oh, Seonno Yoon, Y. Song, 2015 .

The impact of gate to drain spacing on hot-carrier degradation in sub-100 nm Ni–Pt salicidation FinFETs

H. Lee, S. M. Lee, Jungwoo Oh, 2015 .

Improved reduction of contact resistance in NiSi/Si junction using Holmium interlayer

H. Lee, Jungwoo Oh, Hyeong-Sub Song, 2020 .

Improvement of Thermal Stability of Ni Germanide Using a Ni–Pt(1%) Alloy on Ge-on-Si Substrate for Nanoscale Ge MOSFETs

Hsing-Huang Tseng, Ga-Won Lee, R. Jammy, 2010, IEEE Transactions on Nanotechnology.

Characterization of device performance and reliability of high performance Ge-on-Si field-effect transistor

H. Lee, Jungwoo Oh, P. Majhi, 2011 .

Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs

H. Lee, B. Lee, C. Kang, 2009 .

Sub-60nm Si tunnel field effect transistors with Ion >100 µA/µm

Chang Yong Kang, Hsing-Huang Tseng, Raj Jammy, 2010, 2010 Proceedings of the European Solid State Device Research Conference.

Demonstration of $L_{g} \sim \hbox{55}\ \hbox{nm}$ pMOSFETs With $\hbox{Si/Si}_{0.25}\hbox{Ge}_{0.75}/\hbox{Si}$ Channels, High $I_{\rm on}/I_{\rm off}\ (≫ \hbox{5} \times \hbox{10}^{4})$ , and Controlled Short Channel Effects (SCEs)

Hsing-Huang Tseng, S. Datta, R. Jammy, 2008, IEEE Electron Device Letters.

The Effect of a Si Capping Layer on RF Characteristics of High-$k$ /Metal Gate SiGe Channel pMOSFETs

Jack C. Lee, C. Kang, Jungwoo Oh, 2010, IEEE Electron Device Letters.

Interfacial AlN formation of Si/Ti/Al/Cu Ohmic contact for AlGaN/GaN high-electron-mobility transistors

H. Lee, Jungwoo Oh, Seonno Yoon, 2016 .

Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation

S. Banerjee, J. Campbell, Jungwoo Oh, 2008 .

Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate

B. H. Lee, H. Lee, C. Kang, 2008 .

Band-Engineered Low PMOS VT with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme

Hsing-Huang Tseng, Byoung Hun Lee, R. Jammy, 2007, 2007 IEEE Symposium on VLSI Technology.

Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide

Seung Min Lee, Jungwoo Oh, C. Bielawski, 2017, Scientific Reports.

Quantification of interfacial state density (Dit) at the high-k/III-V interface based on Hall effect measurements

Y. T. Chen, G. Bersuker, D. Veksler, 2012 .

Improved thermal stability of Al2O3/HfO2/Al2O3 high-k gate dielectric stack on GaAs

Jungwoo Oh, M. Cho, D. Ko, 2010 .

on-State Performance Enhancement and Channel-Direction-Dependent Performance of a Biaxial Compressive Strained $ \hbox{Si}_{0.5}\hbox{Ge}_{0.5}$ Quantum-Well pMOSFET Along $ \langle \hbox{110} \rangle$ and $\langle \hbox{100} \rangle$ Channel Directions

Leonard Franklin Register, Raj Jammy, Aneesh Nainani, 2011, IEEE Transactions on Electron Devices.

Flatband voltage instability characteristics of HfO2-based GaAs metal-oxide-semiconductor capacitors with a thin Ge layer

Jack C. Lee, Manhong Zhang, Jungwoo Oh, 2008 .