P. Majhi

发表

Prospect of tunneling green transistor for 0.1V CMOS

C. Hu, T. Liu, A. Javey, 2010, 2010 International Electron Devices Meeting.

Si tunnel transistors with a novel silicided source and 46mV/dec swing

C. Hu, T. Liu, P. Patel, 2010, 2010 Symposium on VLSI Technology.

Highly scaled (Lg ∼ 56 nm) gate-last Si tunnel field-effect transistors with ION > 100 μA/μm

C. Hu, T. Liu, K. Jeon, 2011 .

Strained SiGe and Si FinFETs for high performance logic with SiGe/Si stack on SOI

P. Kirsch, K. Akarvardar, P. Majhi, 2010, 2010 International Electron Devices Meeting.

Contact Resistance Reduction to FinFET Source/Drain Using Novel Dielectric Dipole Schottky Barrier Height Modulation Method

R. Wallace, W. Loh, P. Majhi, 2011, IEEE Electron Device Letters.

InGaAs MOSFET performance and reliability improvement by simultaneous reduction of oxide and interface charge in ALD (La)AlOx/ZrO2 gate stack

G. Bersuker, P. Kirsch, S. Oktyabrsky, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Strain additivity in III-V channels for CMOSFETs beyond 22nm technology node

R. Jammy, P. Majhi, J. Lee, 2008, 2008 Symposium on VLSI Technology.

Addressing the gate stack challenge for high mobility InxGa1-xAs channels for NFETs

S. Koveshnikov, S. Datta, V. Tokranov, 2008, 2008 IEEE International Electron Devices Meeting.

Integration of dual metal gate CMOS on high-k dielectrics utilizing a metal wet etch process

Husam N. Alshareef, Byoung Hun Lee, Muhammad M. Hussain, 2005 .

High Electron Mobility (2270 cm2/Vsec) In0.53Ga0.47As Inversion Channel N-MOSFETs with ALD ZrO2 Gate Oxide Providing 1 nm EOT

V. Tokranov, M. Yakimov, S. Oktyabrsky, 2008, 2008 Device Research Conference.

The challenges and progress of USJ formation & process integration for 32nm technology and beyond

T. Liu, Jungwoo Oh, P. Majhi, 2008, Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08).

Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge

P. Hurley, G. Ghibaudo, P. Majhi, 2009 .

Near band edge Schottky barrier height modulation using high-κ dielectric dipole tuning mechanism

R. Wallace, W. Loh, P. Majhi, 2009 .

Tunnel Oxide Dipole Engineering in TANOS Flash Memory for Fast Programming with Good Retention and Endurance

D. Gilmer, P. Kirsch, P. Majhi, 2008, 2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).

Highly Manufacturable 45nm LSTP CMOSFETs Using Novel Dual High-k and Dual Metal Gate CMOS Integration

R. Choi, C. Kang, P. Majhi, 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

Self-aligned III-V MOSFETs heterointegrated on a 200 mm Si substrate using an industry standard process flow

P. Kirsch, W. Loh, P. Majhi, 2010, 2010 International Electron Devices Meeting.

Demonstration of High-Performance PMOSFETs Using $ \hbox{Si}$–$\hbox{Si}_{x}\hbox{Ge}_{1 - x}$ –$\hbox{Si}$ Quantum Wells With High- $\kappa$/Metal-Gate Stacks

R. Jammy, P. Majhi, R. Choi, 2008, IEEE Electron Device Letters.

Thermal Immune Ni Germanide for High Performance Ge MOSFETs on Ge -on- Si Substrate Utilizing $ \hbox{Ni}_{0.95}\hbox{Pd}_{0.05}$ Alloy

Won-Ho Choi, R. Jammy, Zhun Zhong, 2009 .

Thermal Immune Ni Germanide for High Performance Ge MOSFETs on Geon-Si Substrate Utilizing Ni 0 . 95 Pd 0 . 05 Alloy

P. Majhi, R. Jammy, Hi-Deok Lee, 2009 .

Improved Ge Surface Passivation With Ultrathin $ \hbox{SiO}_{X}$ Enabling High-Mobility Surface Channel pMOSFETs Featuring a HfSiO/WN Gate Stack

J.C. Lee, Hsing-Huang Tseng, Byoung Hun Lee, 2007, IEEE Electron Device Letters.

Performance Enhancements in Scaled Strained-SiGe pMOSFETs With HfSiOx/TiSiN Gate Stacks

A. O'Neill, O. Alatise, P. Majhi, 2009 .

Performance Enhancements in Scaled Strained-SiGe pMOSFETs With $ \hbox{HfSiO}_{x}/\hbox{TiSiN}$ Gate Stacks

A. O'Neill, O. Alatise, P. Majhi, 2009, IEEE Transactions on Electron Devices.

Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)

G. Bersuker, M. Gardner, P. Zeitzoff, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Effective work function modification of atomic-layer-deposited-TaN film by capping layer

Husam N. Alshareef, Kisik Choi, Byoung Hun Lee, 2006 .

Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation

W. Loh, Jungwoo Oh, P. Majhi, 2009, IEEE Electron Device Letters.

Vth variation and strain control of high Ge% thin SiGe channels by millisecond anneal realizing high performance pMOSFET beyond 16nm node

G. Bersuker, R. Jammy, P. Majhi, 2006, 2009 Symposium on VLSI Technology.

High-performance Enhancement-Mode In0.53Ga0.47As surface channels n-MOSFET with thin In0.2Ga0.8As capping and laser anneal effect

D. Veksler, P. Majhi, R. Jammy, 2010, 2010 Proceedings of the European Solid State Device Research Conference.

Integration of dual metal gate CMOS with TaSiN (NMOS) and Ru (PMOS) gate electrodes on HfO/sub 2/ gate dielectric

B.H. Lee, P. Majhi, M.S. Akbar, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

Contact materials for nanoelectronics

P. Majhi, H. Alshareef, M. Quevedo-López, 2011 .

Comparison of NMOS and PMOS stress for determining the source of NBTI in TiN/HfSiON devices [MOSFETs]

G. Bersuker, R. Choi, P. Majhi, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

Thermionic Field Emission Explanation for Nonlinear Richardson Plots

K. Saraswat, P. Majhi, C. Kenney, 2011, IEEE Transactions on Electron Devices.

Dual channel FinFETs as a single high-k/metal gate solution beyond 22nm node

R. Jammy, P. D. Kirsch, P. Majhi, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

High temperature millisecond silicide anneal for contact resistivity < 10−8 Ωcm2

G. Bersuker, P. Kirsch, W. Loh, 2011, Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications.

Microstructure Evolution of Pulsed Laser‐Deposited (Ba, Sr)TiO3 Films on MgO for Microwave Applications

S. W. Kirchoefer, P. Majhi, J. Horwitz, 2005 .

Thermally Robust Ni Germanide Technology Using Cosputtering of Ni and Pt for High-Performance Nanoscale Ge MOSFETs

H. Lee, Ga-Won Lee, Min-Ho Kang, 2012, IEEE Transactions on Nanotechnology.

Improvement of Thermal Stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge Metal–Oxide–Semiconductor Field Effect Transistors

H. Lee, Ga-Won Lee, Min-Ho Kang, 2012 .

Improvement of thermal stability of Ni-germanide with co-sputtering of nickel and palladium for high performance Ge CMOSFET

H. Lee, Min-Ho Kang, Jungwoo Oh, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

Ni Germanide Utilizing Ytterbium Interlayer for High-Performance Ge MOSFETs

H. Lee, Ga-Won Lee, Jungwoo Oh, 2009 .

Effective surface passivation methodologies for high performance germanium metal oxide semiconductor field effect transistors

B. H. Lee, Jack C. Lee, P. Kirsch, 2008 .

High Performance pMOSFETs Using Si/Si1-xGex/Si Quantum Wells with High-k/Metal Gate Stacks and Additive Uniaxial Strain for 22 nm Technology Node

R. Jammy, P. Majhi, R. Choi, 2007, 2007 IEEE International Electron Devices Meeting.

Improved self-gain in deep submicrometer strained silicon-germanium pMOSFETs with HfSiOx/TiSiN gate stacks

A. O'Neill, O. Alatise, P. Majhi, 2010 .

Performance and variability in multi-VT FinFETs using fin doping

P. Y. Hung, T. Ngai, R. Jammy, 2012, Proceedings of Technical Program of 2012 VLSI Technology, System and Application.

Impact of Fin Doping and Gate Stack on FinFET (110) and (100) Electron and Hole Mobilities

S. Gausepohl, P. Kirsch, K. Akarvardar, 2012, IEEE Electron Device Letters.

Depth Profiling of La2O3 ∕ HfO2 Stacked Dielectrics for Nanoelectronic Device Applications

P. Majhi, H. Alshareef, M. Quevedo-López, 2011 .

Combinatorial Methodology for the Exploration of Metal Gate Electrodes on HfO2 for the Advanced Gate Stack

Stefan De Gendt, John S. Suehle, Ichiro Takeuchi, 2008 .

Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide

H. Lee, Jungwoo Oh, P. Majhi, 2010 .

Threshold voltage (V/sub th/) instability in HfO/sub 2/ high-/spl kappa/ gate stacks with TiN metal gate: comparison between NH/sub 3/ and O/sub 3/ interface treatments

J. Peterson, P. Majhi, Dim-Lee Kwong, 2004, IEEE Electron Device Letters.

Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes

D. Kwong, G. Bersuker, B. Lee, 2008 .

Wafer-scale, sub-5 nm junction formation by monolayer doping and conventional spike annealing.

A. Javey, P. Majhi, J. Ho, 2009, Nano letters.

Detailed high-k/In0.53Ga0.47As interface understanding to enable improved In0.53Ga0.47As gate stack quality

Y. T. Chen, J. Woicik, D. Veksler, 2011, Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications.

Metal gate work function engineering using AlNx interfacial layers

B. Lee, P. Majhi, H. Alshareef, 2006 .

Issues associated with p-type band-edge effective work function metal electrodes: Fermi-level pinning and flatband roll-off

D. Kwong, G. Bersuker, B. Lee, 2007, 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).

SiGe cantilever channel gate-all-around (GAA) fully depleted (FD) PMOSFET with high-κ and metal gate

P. Majhi, S. Dey, S. Joshi, 2007, 2007 65th Annual Device Research Conference.

Work function engineering in silicides: Chlorine doping in NiSi

G. Bersuker, A. Demkov, W. Loh, 2011 .

Highly (111)-oriented and conformal iridium films by liquid source metalorganic chemical vapor deposition

P. Majhi, S. Dey, Changzhen Wang, 2001 .

Dependence of pmos metal work functions on surface conditions of high-k gate dielectrics

V. Misra, Bongmook Lee, P. Majhi, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Electrical observation of deep traps in high-/spl kappa//metal gate stack transistors

G. Bersuker, R. Choi, P. Majhi, 2005, IEEE Electron Device Letters.

Comparison of effective work function extraction methods using capacitance and current measurement techniques

G. Bersuker, K. Matthews, P. Majhi, 2006, IEEE Electron Device Letters.

Systematic investigation of amorphous transition-metal-silicon-nitride electrodes for metal gate CMOS applications

G. Bersuker, K. Choi, P. Majhi, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

Microstructural Innovation of Ni Germanide on Ge-on-Si Substrate by Using Palladium Incorporation

H. Lee, Ga-Won Lee, Chel-Jong Choi, 2009 .

High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric

Y. Nishi, J. Harris, P. Majhi, 2007 .

A simple chemical method for preparation of hydroxyapatite coatings on Ti6Al4V substrate

P. Majhi, M. Najdoski, I. Grozdanov, 2001, Journal of materials science. Materials in medicine.

Sub-300 Å (Bax,Sr1-x)TiO3 Films by Metal Organic Chemical Vapor Deposition: Nanostructure, Step Coverage, and Dielectric Properties

P. Majhi, S. Dey, Jun Hai Zhao, 2001 .

Preparation of Iridium Films by Liquid Source Metalorganic Chemical Vapor Deposition

P. Majhi, S. Dey, J. Goswami, 1999 .

Nanoscale doping of InAs via sulfur monolayers

Paul W. Leu, A. Javey, P. Majhi, 2009 .

Synchrotron radiation photoemission spectroscopic study of band offsets and interface self-cleaning by atomic layer deposited HfO2 on In0.53Ga0.47As and In0.52Al0.48As

Y. Nishi, M. Kobayashi, P. Majhi, 2008 .

Challenges of integration of high-κ dielectric with III-V materials (Invited Paper)

P. Majhi, W. Tsai, S. Koveshnikov, 2009 .

Effective work function of Pt, Pd, and Re on atomic layer deposited HfO2

Sandwip Dey, Prashant Majhi, P. Majhi, 2006 .

Phase Separation of Ni Germanide Formed on a Ge-on-Si Structure for Ge MOSFETs

H. Lee, Ga-Won Lee, B. Lee, 2008 .

Characteristics and mechanism of tunable work function gate electrodes using a bilayer metal structure on SiO/sub 2/ and HfO/sub 2/

Y. Nishi, P. Majhi, L. Colombo, 2005, IEEE Electron Device Letters.

Mobility enhancement of high-k gate stacks through reduced transient charging

Q. Wang, G. Bersuker, B.H. Lee, 2005, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

High-Mobility TaN/$\hbox{Al}_{2}\hbox{O}_{3}$ /Ge(111) n-MOSFETs With RTO-Grown Passivation Layer

P. Majhi, E. Tutuc, S. Banerjee, 2010, IEEE Electron Device Letters.

CMOS Scaling with III-V Channels for Improved Performance and Low Power

P. Kirsch, W. Loh, Jungwoo Oh, 2011 .

Improved Electrical Characteristics of Ge-on-Si Field-Effect Transistors With Controlled Ge Epitaxial Layer Thickness on Si Substrates

C. Kang, Jungwoo Oh, P. Majhi, 2007, IEEE Electron Device Letters.

ECR-MOCVD of the Ba-Sr-Ti-O system below 400°C. Part I: Processing

P. Majhi, S. Dey, P. Alluri, 1998 .

Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer

Jack C. Lee, Manhong Zhang, P. Majhi, 2008 .

Modified NiSi ∕ Si Schottky Barrier Height by Nitrogen Implantation

T. Liu, P. Majhi, R. Jammy, 2009 .

Improvement of Thermal Stability of Ni Germanide Using a Ni–Pt(1%) Alloy on Ge-on-Si Substrate for Nanoscale Ge MOSFETs

Hsing-Huang Tseng, Ga-Won Lee, R. Jammy, 2010, IEEE Transactions on Nanotechnology.

Physical comparison of HfO2 transistors with polycrystalline silicon and TiN electrodes

Howard R. Huff, Byoung Hun Lee, G. Bersuker, 2005 .

InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition

James S. Harris, Chi On Chui, Donghun Choi, 2006 .

Characterization of device performance and reliability of high performance Ge-on-Si field-effect transistor

H. Lee, Jungwoo Oh, P. Majhi, 2011 .

Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs

H. Lee, B. Lee, C. Kang, 2009 .

Sub-60nm Si tunnel field effect transistors with Ion >100 µA/µm

Chang Yong Kang, Hsing-Huang Tseng, Raj Jammy, 2010, 2010 Proceedings of the European Solid State Device Research Conference.

Advanced techniques for achieving ultra-shallow junctions in future CMOS devices

W. Loh, P. Majhi, R. Jammy, 2010, 2010 International Workshop on Junction Technology Extended Abstracts.

Electrical reliability aspects of HfO2 high-k gate dielectrics with TaN metal gate electrodes under constant voltage stress

Yue Kuo, J. Lu, S. Chatterjee, 2006, Microelectron. Reliab..

(110) and (100) Sidewall-oriented FinFETs: A performance and reliability investigation

K. Matthews, K. Akarvardar, P. Majhi, 2012 .

Demonstration of $L_{g} \sim \hbox{55}\ \hbox{nm}$ pMOSFETs With $\hbox{Si/Si}_{0.25}\hbox{Ge}_{0.75}/\hbox{Si}$ Channels, High $I_{\rm on}/I_{\rm off}\ (≫ \hbox{5} \times \hbox{10}^{4})$ , and Controlled Short Channel Effects (SCEs)

Hsing-Huang Tseng, S. Datta, R. Jammy, 2008, IEEE Electron Device Letters.

S. Datta, B. Rajamohanan, P. Majhi, 2012, IEEE Electron Device Letters.

The Effect of a Si Capping Layer on RF Characteristics of High-$k$ /Metal Gate SiGe Channel pMOSFETs

Jack C. Lee, C. Kang, Jungwoo Oh, 2010, IEEE Electron Device Letters.

In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm

S. Koveshnikov, Vadim Tokranov, Serge Oktyabrsky, 2008 .

Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation

S. Banerjee, J. Campbell, Jungwoo Oh, 2008 .

Mechanisms limiting EOT scaling and gate leakage currents of high-k/metal gate stacks directly on SiGe and a method to enable sub-1nm EOT

D. Gilmer, G. Bersuker, P. Kirsch, 2008, Symposium on VLSI Technology.

Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate

B. H. Lee, H. Lee, C. Kang, 2008 .

Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- $k$/Metal Gate Stacks Directly on SiGe

G. Bersuker, R. Jammy, P. Majhi, 2009, IEEE Electron Device Letters.

Band-Engineered Low PMOS VT with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme

Hsing-Huang Tseng, Byoung Hun Lee, R. Jammy, 2007, 2007 IEEE Symposium on VLSI Technology.

The influence of HfO2 film thickness on the interface state density and low field mobility of n channel HfO 2/TiN gate MOSFETs

P. Hurley, G. Ghibaudo, P. Majhi, 2007 .

Growth mechanism of TiN film on dielectric films and the effects on the work function

Husam N. Alshareef, Hongfa Luan, Kisik Choi, 2005 .

Advanced high-k/metal gate stack progress and challenges – a materials and process integration perspective

G. Bersuker, P. Kirsch, P. Majhi, 2010 .

Aggressively Scaled High-k Gate Dielectric with Excellent Performance and High Temperature Stability for 32nm and Beyond

D. Gilmer, G. Bersuker, P. Kirsch, 2007, 2007 IEEE International Electron Devices Meeting.

Dielectric dipole mitigated Schottky barrier height tuning using atomic layer deposited aluminum oxide for contact resistance reduction

Moon J. Kim, R. Wallace, W. Loh, 2011 .

On Oxygen Deficiency and Fast Transient Charge-Trapping Effects in High-$k$ Dielectrics

Hongfa Luan, Kisik Choi, Byoung Hun Lee, 2006, IEEE Electron Device Letters.

Realiability Characteristics of Metal/High-K Pmos with Top Interface Engineered Band Offset Dielectric (BOD)

G. Bersuker, B. Lee, S. Krishnan, 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

Developing a systematic approach to metal gates and high-k dielectrics in future-generation CMOS

Prashant Majhi, Huang-Chun Wen, Husam N. Alshareef, 2006, MICRO 2006.

Temperature dependence of the work function of ruthenium-based gate electrodes

B. Lee, P. Majhi, H. Alshareef, 2006 .

Flexible, simplified CMOS on Si(110) with metal gate / high k for HP and LSTP

P. Kirsch, S. Thompson, S. Suthram, 2007, 2007 IEEE International Electron Devices Meeting.

Gate first high-k/metal gate stacks with zero SiOx interface achieving EOT=0.59nm for 16nm application

G. Bersuker, R. Jammy, P. Majhi, 2006, 2009 Symposium on VLSI Technology.

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

Husam N. Alshareef, Muhammad Mustafa Hussain, Gennadi Bersuker, 2008 .

Investigation of work function tuning using multiple layer metal gate electrodes stacks for complementary metal-oxide-semiconductor applications

Jae-Hoon Lee, V. Misra, P. Majhi, 2005 .

Internal photoemission spectroscopy of [TaN∕TaSiN] and [TaN∕TaCN] metal stacks on SiO2 and [HfO2∕SiO2] dielectric stack

J. Suehle, E. Vogel, P. Majhi, 2008 .

Thermally Stable N-Metal Gate MOSFETs Using La-Incorporated HfSiO Dielectric

R. Jammy, B.H. Lee, P. Majhi, 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

Work function engineering using lanthanum oxide interfacial layers

Husam N. Alshareef, Byoung Hun Lee, Raj Jammy, 2006 .

Thermal response of Ru electrodes in contact with SiO2 and Hf-based high-k gate dielectrics

D. Kwong, B. Lee, P. Majhi, 2005 .

on-State Performance Enhancement and Channel-Direction-Dependent Performance of a Biaxial Compressive Strained $ \hbox{Si}_{0.5}\hbox{Ge}_{0.5}$ Quantum-Well pMOSFET Along $ \langle \hbox{110} \rangle$ and $\langle \hbox{100} \rangle$ Channel Directions

Leonard Franklin Register, Raj Jammy, Aneesh Nainani, 2011, IEEE Transactions on Electron Devices.

Combinatorial Study of Ni-Ti-Pt Ternary Metal Gate Electrodes on HfO 2 for the Advanced Gate Stack

Martin L. Green, J. Suehle, T. Chikyow, 2006 .

Composition dependence of the work function of Ta1−xAlxNy metal gates

B. Lee, R. Wallace, P. Majhi, 2006 .

Metal gate: HfO2 metal-oxide-semiconductor structures on high-indium-content InGaAs substrate using physical vapor deposition

Jack C. Lee, Manhong Zhang, P. Majhi, 2008 .

A systematic study of the influence of nitrogen in tuning the effective work function of nitrided metal gates

K. Choi, P. Majhi, H. Alshareef, 2005, IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech)..

Study of piezoresistance under unixial stress for technologically relevant III-V semiconductors using wafer bending experiments

K. Saraswat, A. Nainani, P. Majhi, 2010 .

The progress and challenges of threshold voltage control of high-k/metal-gated devices for advanced technologies (Invited Paper)

Hsing-Huang Tseng, Raj Jammy, Gennadi Bersuker, 2009 .

Flatband voltage instability characteristics of HfO2-based GaAs metal-oxide-semiconductor capacitors with a thin Ge layer

Jack C. Lee, Manhong Zhang, Jungwoo Oh, 2008 .

HfO2-based InP n-channel metal-oxide-semiconductor field-effect transistors and metal-oxide-semiconductor capacitors using a germanium interfacial passivation layer

Jack C. Lee, Manhong Zhang, P. Majhi, 2008 .