H. Ota

发表

Experimental realization of complementary p- and n- tunnel FinFETs with subthreshold slopes of less than 60 mV/decade and very low (pA/μm) off-current on a Si CMOS platform

K. Endo, T. Mori, Y. Morita, 2014, 2014 IEEE International Electron Devices Meeting.

Design guidelines to achieve minimum energy operation for ultra low voltage tunneling FET logic circuits

T. Sakurai, M. Takamiya, K. Fukuda, 2015 .

Heated ion implantation for high-performance and highly reliable silicon-on-insulator complementary metal–oxide–silicon fin field-effect transistors

K. Endo, Y. Morita, W. Mizubayashi, 2015 .

Heated ion implantation technology for highly reliable metal-gate/high-k CMOS SOI FinFETs

K. Endo, Y. Morita, W. Mizubayashi, 2013, 2013 IEEE International Electron Devices Meeting.

Analysis of Threshold Voltage Flexibility in Ultrathin-BOX SOI FinFETs

K. Endo, Y. Morita, W. Mizubayashi, 2014 .

Interlayer coupling effect on the performance of monolithic three-dimensional inverters and its dependence on the interlayer dielectric thickness

T. Irisawa, K. Fukuda, H. Ota, 2017 .

Synthetic electric field tunnel FETs: Drain current multiplication demonstrated by wrapped gate electrode around ultrathin epitaxial channel

K. Endo, T. Mori, Y. Morita, 2013, 2013 Symposium on VLSI Technology.

The Guideline of Si/SiGe Hetero-Junction Design in Parallel Plate Style TFETs (PP-TFETs) for Si CMOS Platform Implementation

S. Kawanaka, Y. Morita, S. Migita, 2014 .

Novel Device Architecture Proposal of Source Junctionless Tunneling Field-Effect Transistor (SJL-TFET)

S. Kawanaka, T. Mori, Y. Morita, 2014 .

Phase transformation behavior of ultrathin Hf0.5Zr0.5O2 films investigated through wide range annealing experiments

A. Sawa, A. Toriumi, S. Migita, 2019, Japanese Journal of Applied Physics.

Material and device engineering in fully depleted silicon-on-insulator transistors to realize a steep subthreshold swing using negative capacitance

Akira Toriumi, Shinji Migita, Junichi Hattori, 2016 .

Decomposition of On-Current Variability of nMOS FinFETs for Prediction Beyond 20 nm

K. Endo, T. Matsukawa, S. O'uchi, 2012, IEEE Transactions on Electron Devices.

Bias temperature instability in tunnel field-effect transistors

K. Endo, Y. Morita, K. Fukuda, 2017 .

Impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistors

K. Endo, Yiming Li, W. Mizubayashi, 2017 .

Channel shape and interpoly dielectric material effects on electrical characteristics of floating-gate-type three-dimensional fin channel flash memories

T. Chikyow, K. Endo, T. Nabatame, 2015 .

Experimental study of three-dimensional fin-channel charge trapping flash memories with titanium nitride and polycrystalline silicon gates

K. Endo, Y. Morita, W. Mizubayashi, 2014 .

Comparative Study of Charge Trapping Type SOI-FinFET Flash Memories with Different Blocking Layer Materials

T. Chikyow, K. Endo, T. Nabatame, 2014 .

Analysis of threshold voltage shifts in double gate tunnel FinFETs: Effects of improved electrostatics by gate dielectrics and back gate effects

K. Endo, T. Matsukawa, S. O'uchi, 2013, 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

Advanced FinFET process technology for 20 nm node and beyond

K. Endo, Y. Morita, W. Mizubayashi, 2011, The 4th IEEE International NanoElectronics Conference.

Comprehensive analysis of Ion variation in metal gate FinFETs for 20nm and beyond

Hiromi Yamauchi, Kunihiro Sakamoto, Takashi Matsukawa, 2011, 2011 International Electron Devices Meeting.

Fin-Height Effect on Poly-Si/PVD-TiN Stacked-Gate FinFET Performance

K. Endo, Y. Morita, W. Mizubayashi, 2012, IEEE Transactions on Electron Devices.

Electrical performances of junctionless-FETs at the scaling limit (LCH = 3 nm)

M. Masahara, H. Ota, S. Migita, 2012, 2012 International Electron Devices Meeting.

Quantitative analysis of contribution of initial traps to breakdown in HfAlO/sub x//SiO/sub 2/ stacked gate dielectrics

T. Nabatame, A. Toriumi, W. Mizubayashi, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

Correlation between Dislocation Density and the Macroscopic Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy.

H. Ota, H. Amano, I. Akasaki, 1999 .

Particle-free superconducting Bi2Sr2CaCu2Ox ultrathin films prepared by atomic-layer-controlled molecular beam epitaxy technique

S. Migita, H. Ota, S. Sakai, 1999 .

Fringing field effects in negative capacitance field-effect transistors with a ferroelectric gate insulator

A. Toriumi, K. Fukuda, S. Migita, 2018 .

First Experimental Observation of Channel Thickness Scaling Induced Electron Mobility Enhancement in UTB-GeOI nMOSFETs

T. Irisawa, H. Ota, Y. Kurashima, 2017, IEEE Transactions on Electron Devices.

Simulation study of short-channel effects of tunnel field-effect transistors

K. Endo, Y. Morita, K. Fukuda, 2018 .

Design of steep-slope negative-capacitance FinFETs for dense integration: Importance of appropriate ferroelectric capacitance and short-channel effects

A. Toriumi, K. Fukuda, S. Migita, 2018 .

Steep subthreshold swing and energy efficiency in MOSFFETs utilizing nonlinear gate dielectric insulators

A. Toriumi, K. Fukuda, S. Migita, 2016 .

Wake-up-free properties and high fatigue resistance of HfxZr1−xO2-based metal–ferroelectric–semiconductor using top ZrO2 nucleation layer at low thermal budget (300 °C)

T. Nabatame, Y. Morita, H. Ota, 2022, APL Materials.

Effect of the interfacial SiO2 layer thickness on the dominant carrier type in leakage currents through HfAlOx∕SiO2 gate dielectric films

T. Nabatame, A. Toriumi, W. Mizubayashi, 2004 .

Achieving low parasitic resistance in Ge p-channel metal–oxide–semiconductor field-effect transistors by ion implantation after germanidation

H. Ota, T. Maeda, W. Chang, 2015 .

Epitaxial Growth of BSCCO Type Structure in Atomic Layer by Layer Deposition by Ion Beam Sputtering

S. Migita, H. Ota, R. Aoki, 1993 .

Impact of atomic-scale structural design on ultra-short channel (3 nm) MOSFETs

Y. Morita, S. Migita, M. Masahara, 2013, 2013 IEEE 5th International Nanoelectronics Conference (INEC).

A TCAD device simulator for exotic materials and its application to a negative-capacitance FET

K. Fukuda, H. Ota, J. Hattori, 2019, Journal of Computational Electronics.

Fabrication and electrical properties of ferroelectric-gate FETS with epitaxial gate structures

S. Migita, H. Ota, S. Sakai, 2004 .

Epitaxial Bi4Ti3O12 thin film growth using Bi self-limiting function

S. Migita, H. Ota, S. Sakai, 1999 .

Pulsed laser deposition and ferroelectric properties of SrBi2Ta2O9 thin films

S. Migita, H. Ota, S. Sakai, 1999 .

Effect of Ge Metal–Insulator–Semiconductor Interfacial Layers on Interface Trap Density near the Conduction Band Edge

N. Taoka, S. Takagi, Y. Morita, 2010 .

Accelerated ferroelectric phase transformation in HfO2/ZrO2 nanolaminates

A. Toriumi, Y. Morita, S. Migita, 2021, Applied Physics Express.

Thickness-independent behavior of coercive field in HfO2-based ferroelectrics

A. Sawa, Hiroyuki Yamada, A. Toriumi, 2017, 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM).

Investigation of the wake-up process and time-dependent imprint of Hf0.5Zr0.5O2 film through the direct piezoelectric response

Y. Morita, S. Migita, H. Ota, 2021, Applied Physics Letters.

Surface morphology for annealed and etched MgO(100)

H. Ota, S. Hara, N. Ikemiya, 1996 .

Superstructure observation on a MgO(100) surface

H. Ota, S. Hara, R. Aoki, 1996 .

Physical origins of mobility enhancement of Ge p-channel metal-insulator-semiconductor field effect transistors with Si passivation layers

N. Taoka, S. Takagi, Y. Morita, 2010 .

GaN-Based Laser Diodes Processed by Annealing with Minority-Carrier Injection

H. Ota, Toshiyuki Tanaka, Hirokazu Takahashi, 1999 .

0.6nm-EOT high-k gate stacks with HfSiOx interfacial layer grown by solid-phase reaction between HfO 2 and Si substrate

A. Toriumi, Toshihide Nabatame, Yukinori Morita, 2007 .

Study of tunneling transport in Si-based tunnel field-effect transistors with ON current enhancement utilizing isoelectronic trap

Y. Morita, K. Fukuda, W. Mizubayashi, 2015 .

Band-to-band tunneling current enhancement utilizing isoelectronic trap and its application to TFETs

Y. Morita, K. Fukuda, S. Migita, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

Study of gate leakage current paths in p-channel tunnel field-effect transistor by current separation measurement and device simulation

Y. Morita, K. Fukuda, W. Mizubayashi, 2015 .

Polarization switching behavior of Hf–Zr–O ferroelectric ultrathin films studied through coercive field characteristics

A. Sawa, A. Toriumi, S. Migita, 2018 .

Impact of granular work function variation in a gate electrode on low-frequency noise for fin field-effect transistors

K. Endo, Y. Morita, K. Fukuda, 2015 .

Influence of work function variation of metal gates on fluctuation of sub-threshold drain current for fin field-effect transistors with undoped channels

K. Endo, Y. Morita, W. Mizubayashi, 2014 .

Suppression of threshold voltage variability of double-gate fin field-effect transistors using amorphous metal gate with uniform work function

K. Endo, Y. Morita, W. Mizubayashi, 2013 .

Suppressed variability of current-onset voltage of FinFETs by improvement of work function uniformity of metal gates

K. Endo, Y. Morita, W. Mizubayashi, 2013, 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

Suppressing Vt and Gm variability of FinFETs using amorphous metal gates for 14 nm and beyond

K. Endo, T. Matsukawa, S. O'uchi, 2012, 2012 International Electron Devices Meeting.

Re-examination of Flat-Band Voltage Shift for High-k MOS Devices

T. Nabatame, A. Toriumi, Y. Morita, 2007, 2007 IEEE Symposium on VLSI Technology.

The activation of Mg in GaN by annealing with minority-carrier injection

Hiroyuki Ota, Yoshinori Kimura, Mamoru Miyachi, 1998 .

Simultaneous flattening of Si(110), (111), and (001) surfaces for three-dimensional Si nanowires

Y. Morita, H. Ota, 2012 .

Advantages of HfAlON gate dielectric film for advanced low power CMOS application

Koji Tominaga, Tsuyoshi Horikawa, Akira Toriumi, 2005 .

Roles of nitrogen incorporation in HfAlOx(N) gate dielectrics for suppression of boron penetration

T. Nabatame, A. Toriumi, H. Ota, 2004 .

Impact of Surface Hydrophilicization prior to Atomic Layer Deposition for HfO2/Si Direct-Contact Gate Stacks

Akira Toriumi, Shinji Migita, Toshihide Nabatame, 2008 .

AFM measurement of atomic-scale Si surface etching by active oxidation

S. Migita, W. Mizubayashi, Yukinori Morita, 2010 .

Fully coupled 3-D device simulation of negative capacitance FinFETs for sub 10 nm integration

Akira Toriumi, Shinji Migita, Tsutomu Ikegami, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Assessment of Steep-Subthreshold Swing Behaviors in Ferroelectric-Gate Field-Effect Transistors Caused by Positive Feedback of Polarization Reversal

A. Toriumi, S. Migita, H. Ota, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Surface Morphology and Dielectric Properties of Stoichiometric and Off-Stoichiometric SrTiO3 Thin Films Grown by Molecular Beam Epitaxy

S. Migita, H. Ota, S. Sakai, 1999 .

Self-limiting process for the bismuth content in molecular beam epitaxial growth of Bi2Sr2CuOy thin films

S. Migita, H. Ota, S. Sakai, 1997 .

Gate-First High-Performance Germanium nMOSFET and pMOSFET Using Low Thermal Budget Ion Implantation After Germanidation Technique

H. Ota, T. Maeda, W. Chang, 2016, IEEE Electron Device Letters.

Epitaxial NiSi2 source and drain technology for atomic-scale junction control in silicon nanowire MOSFETs

Y. Morita, W. Mizubayashi, S. Migita, 2010, 2010 International Workshop on Junction Technology Extended Abstracts.

Fabrication of silicon tunnel-FETs using epitaxial NiSi2 Schottky junctions and dopant segregation technique

S. Migita, H. Ota, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

Experimental Demonstration of Ultrashort-Channel (3 nm) Junctionless FETs Utilizing Atomically Sharp V-Grooves on SOI

Takashi Matsukawa, Meishoku Masahara, Shinji Migita, 2014, IEEE Transactions on Nanotechnology.

Suppression of tunneling rate fluctuations in tunnel field-effect transistors by enhancing tunneling probability

Y. Morita, K. Fukuda, W. Mizubayashi, 2017 .

Dielectric Breakdown in High-K Gate Dielectrics - Mechanism and Lifetime Assessment

A. Toriumi, H. Ota, T. Nabatame, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

Symmetrical threshold voltage in complementary metal-oxide-semiconductor field-effect transistors with HfAlOx(N) achieved by adjusting Hf/Al compositional ratio

N. Mise, T. Nabatame, A. Toriumi, 2006 .

Formation of phase intergrowth in the syntheses of Bi-superconducting thin films

H. Ota, R. Aoki, K. Sakai, 1997 .

Introduction of SiGe/Si heterojunction into novel multilayer tunnel FinFET

K. Endo, Y. Morita, K. Fukuda, 2015 .

Accurate prediction of PBTI lifetime for N-type fin-channel tunnel FETs

K. Endo, T. Matsukawa, S. O'uchi, 2014, 2014 IEEE International Electron Devices Meeting.

Guidelines for symmetric threshold voltage in tunnel FinFETs with single and dual metal gate electrodes

Hiromi Yamauchi, Takashi Matsukawa, Meishoku Masahara, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Experimental demonstration of temperature stability of Si-tunnel FET over Si-MOSFET

H. Ota, S. Migita, K. Fukuda, 2012, 2012 IEEE Silicon Nanoelectronics Workshop (SNW).

Charge and vortex Kosterlitz-Thouless transitions in Bi-superconducting mixed crystal thin films

H. Ota, H. Murakami, R. Aoki, 1999 .

The influence of Bi-sticking coefficient in the growth of Bi(2212) thin film by ion beam sputtering

S. Migita, H. Ota, R. Aoki, 1996 .

Comparison between Bi-superconductor thin films fabricated via co-deposition and layer-by-layer deposition by ion beam sputtering method

S. Migita, H. Ota, R. Aoki, 1996 .

Importance of interface engineering for synthesis of SrHfO3 perovskite thin films on Si substrates through crystallization of amorphous films and control of flat-band voltages of metal–oxide–semiconductor capacitors

Y. Morita, S. Migita, M. Masahara, 2014 .

What is the Essence of VFB Shifts in High-k Gate Stack?

T. Nabatame, A. Toriumi, H. Ota, 2007 .

Extremely scaled (~0.2 nm) equivalent oxide thickness of higher-k ALD-HfO 2 gate stacks

Y. Morita, W. Mizubayashi, S. Migita, 2011 .

Memory properties of a ferroelectric gate field-effect transistor with an adjoining metal-ferroelectric-metal assistance cell

E. Suzuki, K. Ishii, S. Migita, 2003 .

All-perovskite-oxide ferroelectric memory transistor composed of Bi2Sr2CuOx and PbZr0.5Ti0.5O3 films

S. Migita, Shigeki Sakai, H. Fujino, 2001 .

Preparation of GaN films on sapphire by metalorganic chemical vapor deposition using dimethylhydrazine as nitrogen source

H. Ota, Hirokazu Takahashi, A. Watanabe, 1996 .

Performance limit of parallel electric field tunnel FET and improvement by modified gate and channel configurations

Takashi Matsukawa, Meishoku Masahara, K. Fukuda, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Accurate Compton scattering measurements of noble gases: the importance of electron correlations in heavy atoms

H. Sakurai, H. Ota, M. Itou, 2011 .

Impact of reduced pressure crystallization on ferroelectric properties in hafnium-zirconium dioxide films deposited by sputtering

Mohit, Y. Morita, S. Migita, 2021, Japanese Journal of Applied Physics.

Thermal stability of ferroelectricity in hafnium–zirconium dioxide films deposited by sputtering and chemical solution deposition for oxide-channel ferroelectric-gate transistor applications

Mohit, Y. Morita, S. Migita, 2021 .

Design points of ferroelectric field-effect transistors for memory and logic applications as investigated by metal-ferroelectric-metal–insulator–semiconductor gate stack structures using Hf0.5Zr0.5O2 films

A. Toriumi, S. Migita, H. Ota, 2019, Japanese Journal of Applied Physics.

Structural Metastability and Size Scalability of Phase-Controlled HfO2 Formed through Cap-PDA

T. Nabatame, A. Toriumi, S. Migita, 2009 .

Design and demonstration of very high-k (k∼50) HfO2 for ultra-scaled Si CMOS

A. Toriumi, H. Ota, S. Migita, 2008, 2008 Symposium on VLSI Technology.

Achievement of Higher-k and High-Φ in Phase Controlled HfO2 Film Using Post Gate Electrode Deposition Annealing

T. Nabatame, A. Toriumi, S. Migita, 2007 .

Model for dielectric breakdown mechanism of HfAlO/sub x//SiO/sub 2/ stacked gate dielectrics dominated by the generated subordinate carrier injection

T. Nabatame, A. Toriumi, W. Mizubayashi, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Operations of CMOS Inverter and Ring Oscillator Composed of Ultra-Thin Body Poly-Ge p - and n -MISFETs for Stacked Channel 3D-IC

H. Ota, Y. Kamata, T. Tezuka, 2014 .

Epitaxial Growth of Bi4Ti3O12/CeO2/Ce0.12Zr0.88O2 and Bi4Ti3O12/SrTiO3/Ce0.12Zr0.88O2 Thin Films on Si and Its Application to Metal-Ferroelectric-Insulator-Semiconductor Diodes

S. Migita, H. Ota, S. Sakai, 2000 .

Epitaxial structure SrBi2Ta2O9<116> /SrTiO3<011> /Ce0.12Zr0.88O2<001> /Si<001> for ferroelectric-gate FET memory

S. Migita, H. Ota, Y. Tarui, 2001 .

Structural advantages of silicon-on-insulator FETs over FinFETs in steep subthreshold-swing operation in ferroelectric-gate FETs

Akira Toriumi, Shinji Migita, Junichi Hattori, 2016 .

Perspective of negative capacitance FinFETs investigated by transient TCAD simulation

A. Toriumi, K. Fukuda, S. Migita, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Carrier separation analysis for clarifying carrier conduction and degradation mechanisms in high-k stack gate dielectrics

Kenji Okada, Koji Tominaga, Tsuyoshi Horikawa, 2005, Microelectron. Reliab..

Study of SiO2 Interfacial Layer Growth during Fabrication Process of Ferroelectric HfxZr1−XO2-Based Metal-Ferroelectric Semiconductor

T. Nabatame, Y. Morita, H. Ota, 2021, ECS Transactions.

Charge trapping type FinFET flash memory with Al2O3 blocking layer

T. Chikyow, K. Endo, T. Nabatame, 2013, 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

Significance of Nitrogen and Aluminum Depth Profile Control in HfAlON Gate Insulators

T. Nabatame, A. Toriumi, H. Ota, 2006 .

Two-step annealing effects on ultrathin EOT higher-k (k = 40) ALD-HfO2 gate stacks

Meishoku Masahara, Shinji Migita, Yukinori Morita, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Extremely Scaled (∼0.2 nm) Equivalent Oxide Thickness of Higher-k (k = 40) HfO2 Gate Stacks Prepared by Atomic Layer Deposition and Oxygen-Controlled Cap Post-Deposition Annealing

Y. Morita, W. Mizubayashi, S. Migita, 2012 .

Fabrication of Direct-Contact Higher-k HfO2 Gate Stacks by Oxygen-Controlled Cap Post-Deposition Annealing

Shinji Migita, Yukinori Morita, Wataru Mizubayashi, 2011 .

VFB Roll-off in HfO2 Gate Stack after High Temperature Annealing Process - A Crucial Role of Out-diffused Oxygen from HfO2 to Si

T. Nabatame, A. Toriumi, W. Mizubayashi, 2007, 2007 IEEE Symposium on VLSI Technology.

Enhancement of ferroelectricity in sputtered HZO thin films by catalytically generated atomic hydrogen treatment

Y. Morita, S. Migita, H. Ota, 2022, Japanese Journal of Applied Physics.

Changes in effective work function of HfxRu1-x alloy gate electrode

T. Nabatame, A. Toriumi, H. Ota, 2008 .

Tunnel FinFET CMOS inverter with very low short-circuit current for ultralow-power Internet of Things application

K. Endo, Y. Morita, K. Fukuda, 2017 .

Effect of Intentionally Formed `V-Defects' on the Emission Efficiency of GaInN Single Quantum Well

Hiroyuki Ota, H. Ota, Toshiyuki Tanaka, 2000 .

Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

A. Toriumi, Shinji Migita, Toshihide Nabatame, 2008 .

Novel fabrication technique of sub-10-nm-diameter Si nanowire FET using active oxidation

Y. Morita, W. Mizubayashi, S. Migita, 2010, 2010 Silicon Nanoelectronics Workshop.

Preparation of epitaxial HfO2 film (EOT=0.5 nm) on Si substrate using atomic-layer deposition of amorphous film and rapid thermal crystallization (RTC) in an abrupt temperature gradient

Y. Morita, W. Mizubayashi, S. Migita, 2010, 2010 International Electron Devices Meeting.

Gate-First Processed FUSI/HfO2/HfSiOx/Si MOSFETs with EOT=0.5 nm - Interfacial Layer Formation by Cycle-by-Cycle Deposition and Annealing

T. Nabatame, A. Toriumi, S. Migita, 2007, 2007 IEEE International Electron Devices Meeting.

Intrinsic Origin of Electron Mobility Reduction in High-k MOSFETs - From Remote Phonon to Bottom Interface Dipole Scattering

T. Nabatame, A. Toriumi, S. Migita, 2007, 2007 IEEE International Electron Devices Meeting.

Crystallization technique of epitaxial HfO2 thin films on Si substrates and their potential for advanced high-k gate stack technology

S. Migita, H. Ota, 2011, 2011 IEEE International Conference on IC Design & Technology.

Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect

Takashi Matsukawa, Meishoku Masahara, Shinji Migita, 2014, IEEE Electron Device Letters.

Effect of hot implantation on ON-current enhancement utilizing isoelectronic trap in Si-based tunnel field-effect transistors

Y. Morita, K. Fukuda, W. Mizubayashi, 2015 .

Accurate evaluation of Ge metal—insulator—semiconductor interface properties

Shinichi Takagi, Shinji Migita, Yukinori Morita, 2011 .

Room-Temperature Pulsed Operation of GaN-Based Laser Diodes on a-Face Sapphire Substrate Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

H. Ota, Toshiyuki Tanaka, Hirokazu Takahashi, 1998 .

Roles of high-k and interfacial layers on TDDB reliability studied with HfAlOX/SiO2 stacked gate dielectrics

T. Nabatame, A. Toriumi, H. Ota, 2008, 2008 IEEE International Reliability Physics Symposium.

Mechanism of Gradual Increase of Gate Current in High-K Gate Dielectrics and Its Application to Reliability Assessment

A. Toriumi, H. Ota, H. Satake, 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.