J. Koga

发表

Negative differential conductance in three‐terminal silicon tunneling device

A. Toriumi, J. Koga, 1996 .

Interfacial Segregation of Metal at NiSi/Si Junction for Novel Dual Silicide Technology

J. Koga, Y. Nishi, Y. Tsuchiya, 2007, 2007 IEEE International Electron Devices Meeting.

Experimental study on carrier transport mechanism in ultrathin-body SOI nand p-MOSFETs with SOI thickness less than 5 nm

T. Numata, S. Takagi, K. Uchida, 2002, Digest. International Electron Devices Meeting,.

Three-terminal silicon surface junction tunneling device for room temperature operation

A. Toriumi, J. Koga, 1999, IEEE Electron Device Letters.

Non-volatile Si quantum memory with self-aligned doubly-stacked dots

Ken Uchida, Akira Toriumi, Junji Koga, 2000 .

Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits

K. Matsuzawa, S. Takagi, K. Uchida, 2000 .

Performance and reliability concerns of ultra-thin SOI and ultra-thin gate oxide MOSFETs

A. Toriumi, J. Koga, H. Satake, 1995, Proceedings of International Electron Devices Meeting.

Experimental evidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance, and threshold voltage of ultrathin body SOI MOSFETs

T. Numata, S. Takagi, K. Uchida, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Influences of buried-oxide interface on inversion-layer mobility in ultra-thin SOI MOSFETs

S. Takagi, A. Toriumi, J. Koga, 2002 .

Experimental study on electron mobility in ultrathin-body silicon-on-insulator metal-oxide-semiconductor field-effect transistors

S. Takagi, K. Uchida, J. Koga, 2007 .

Quantitative Examination of Mobility Lowering Associated with Ultrathin Gate Oxides in Silicon Metal-Oxide-Semiconductor Inversion Layer

S. Takagi, J. Koga, T. Ishihara, 2004 .

Impact of platinum incorporation on thermal stability and interface resistance in NiSi/Si junctions based on first-principles calculation

J. Koga, Y. Nishi, A. Kinoshita, 2008, 2008 IEEE International Electron Devices Meeting.

Channel structure design, fabrication and carrier transport properties of strained-Si/SiGe-on-insulator (strained-SOI) MOSFETs

T. Tezuka, J. Koga, S. Takagi, 2003, IEEE International Electron Devices Meeting 2003.

Comprehensive Understanding of Carrier Mobility in MOSFETs with Oxynitrides and Ultrathin Gate Oxides

S. Takagi, J. Koga, T. Ishihara, 2004 .

Experimental Study on Performance Improvement in Dopant-Segregated Schottky Metal–Oxide–Semiconductor Field-Effect Transistors

J. Koga, Y. Nishi, A. Kinoshita, 2008 .

Practical Work Function Tuning Based on Physical and Chemical Nature of Interfacial Impurity in Ni-FUSI/SiON and HfSiON Systems

M. Sato, J. Koga, Y. Tsuchiya, 2006, 2006 International Electron Devices Meeting.

Direct observation of boron dopant fluctuation by site-specific scanning spreading resistance microscopy

K. Yamamoto, K. Suguro, J. Koga, 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

Non-volatile Si quantum memory with self-aligned doubly-stacked dots

N. Sugiyama, A. Toriumi, J. Koga, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Schottky barrier height modulation by atomic dipoles at the silicide/silicon interface

J. Koga, Y. Nishi, A. Kinoshita, 2011 .

Physical mechanism of effective work function modulation caused by impurity segregation at Ni silicide/SiO2 interfaces

J. Koga, Y. Tsuchiya, A. Kinoshita, 2007 .

Physical mechanism of work function modulation due to impurity pileup at Ni-FUSI/SiO(N) interface

J. Koga, Y. Tsuchiya, A. Kinoshita, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Effect of Germanium on Solid-Phase Reaction and Effective Work Function in Fully Ni-Germanosilicided $[\hbox{Ni}(\hbox{Si}_{1 - x}\hbox{Ge}_{x})]$ Gate

J. Koga, Y. Tsuchiya, A. Kinoshita, 2006, IEEE Transactions on Electron Devices.

Programmable single-electron transistor logic for future low-power intelligent LSI: proposal and room-temperature operation

Ken Uchida, Akira Toriumi, Junji Koga, 2003 .

Control of threshold-voltage and short-channel effects in ultrathin strained-SOI CMOS devices

T. Tezuka, J. Koga, S. Takagi, 2005, IEEE Transactions on Electron Devices.

Effective Work Function Control With Aluminum Postdoping in the Ni Silicide/HfSiON Systems

J. Koga, A. Nishiyama, Y. Tsuchiya, 2008, IEEE Transactions on Electron Devices.

Material Characterization of Metal Germanide Gate Electrodes Formed by Fully Germanided Gate Process

J. Koga, A. Nishiyama, Y. Tsuchiya, 2006 .

Negative differential conductance at room temperature in three-terminal silicon surface junction tunneling device

Akira Toriumi, Junji Koga, A. Toriumi, 1997 .

Dependence of Effective Work Function Modulation with Phosphorous Segregation on Ni to Si Ratio in Ni Silicide/SiO2 Systems

J. Koga, A. Nishiyama, Y. Tsuchiya, 2008 .

Enhancement of hot-electron generation rate in Schottky source metal–oxide–semiconductor field-effect transistors

Shinichi Takagi, Ken Uchida, Kazuya Matsuzawa, 2000 .

Physical origin of suppressed effective work function modulation at boron segregated NiSi∕SiON interface

J. Koga, A. Nishiyama, Y. Tsuchiya, 2008 .

Sub-band structure engineering for advanced CMOS channels

J. Koga, Tomohisa Mizuno, Shu Nakaharai, 2005 .

Performance enhancement of partially- and fully-depleted strained-SOI MOSFETs and characterization of strained-Si device parameters

T. Tezuka, J. Koga, N. Hirashita, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Fabrication and device characteristics of strained-Si-on-insulator (strained-SOI) CMOS

T. Numata, N. Sugiyama, S. Takagi, 2004 .

Experimental study on carrier transport mechanisms in double- and single-gate ultrathin-body MOSFETs - Coulomb scattering, volume inversion, and /spl delta/T/sub SOI/-induced scattering

Junji Koga, K. Uchida, S. Takagi, 2003, IEEE International Electron Devices Meeting 2003.

Modeling of screening effect on remote Coulomb scattering due to gate impurities by nonuniform free carriers in poly-Si gate

K. Matsuzawa, S. Takagi, J. Koga, 2007 .

Effect of gate impurity concentration on inversion-layer mobility in MOSFETs with ultrathin gate oxide layer

S. Takagi, J. Koga, T. Ishihara, 2003, IEEE Electron Device Letters.

A comprehensive study of MOSFET electron mobility in both weak and strong inversion regimes

Shinichi Takagi, Akira Toriumi, Junji Koga, 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

High-Performance FinFET with Dopant-Segregated Schottky Source/Drain

Y. Tsunashima, K. Yahashi, K. Matsuo, 2006, 2006 International Electron Devices Meeting.

Ultra Low Voltage Operations in Bulk CMOS Logic Circuits with Dopant Segregated Schottky Source/Drain Transistors

J. Koga, Y. Toyoshima, F. Matsuoka, 2006, 2006 International Electron Devices Meeting.

Solution for high-performance Schottky-source/drain MOSFETs: Schottky barrier height engineering with dopant segregation technique

J. Koga, K. Uchida, A. Kinoshita, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

1 nm NiSi/Si Junction Design based on First-Principles Calculation for Ultimately Low Contact Resistance

J. Koga, Y. Tsuchiya, A. Kinoshita, 2006, 2006 International Electron Devices Meeting.

Influence of Ni silicide phases on effective work function modulation with Al-pileup in the Ni fully silicided gate/HfSiON system

J. Koga, A. Nishiyama, Y. Tsuchiya, 2009 .

Influence of Channel Depletion on the Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory

Ken Uchida, Akira Toriumi, Junji Koga, 2000 .

New findings on inversion-layer mobility in highly doped channel Si MOSFETs

S. Takagi, M. Takayanagi, J. Koga, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Comprehensive Study on Injection Velocity Enhancement in Dopant-Segregated Schottky MOSFETs

K. Uchida, R. Hasumi, J. Koga, 2006, 2006 International Electron Devices Meeting.