J. Schulze

发表

A vertical MOS-gated Esaki tunneling transistor in silicon

W. Hansch, C. Fink, J. Schulze, 2000 .

S. Sedlmaier, J. Schulze, I. Eisele, 2004, IEEE Transactions on Electron Devices.

Crystalline Ge1-xSnx Heterostructures in Lateral High-Speed Devices

S. Jeschke, J. Schulze, O. Pfeiffer, 2010, 2010 Fourth International Conference on Quantum, Nano and Micro Technologies.

A process for the preparation of a nitrided oxide layer on a silicon semiconductor substrate

J. Schulze, A. Abdul-Hak, T. Gaertner, 2001 .

A 10-bit 10x10 25μm-Pixel NIR Camera Using Backside-illuminated Ge-on-Si Detectors and Ultra-low-power Direct-injection ROICs

J. Burghartz, J. Schulze, M. Oehme, 2021 .

Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content

J. Schulze, I. Fischer, Daniel Haehnel, 2015, IEEE Transactions on Electron Devices.

Effect of heavy doping and strain on the electroluminescence of Ge-on-Si light emitting diodes

J. Schulze, M. Oehme, E. Kasper, 2014 .

Electrical spin injection and transport in germanium

Kang L. Wang, J. Schulze, M. Oehme, 2011, 1103.5095.

Enhancement of device performance in vertical sub-100 nm MOS devices due to local channel doping

W. Hansch, C. Fink, J. Schulze, 2002 .

Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers

J. Schulze, M. Oehme, E. Kasper, 2015 .

High performance triangular barrier engineered NIPIN selector for bipolar RRAM

S. Lodha, J. Schulze, U. Ganguly, 2014, 2014 IEEE 6th International Memory Workshop (IMW).

Growth of atomically smooth AlN films with a 5:4 coincidence interface on Si(111) by MBE

W. Richter, J. Schulze, U. Kaiser, 1999 .

Molecular-beam epitaxy of a strongly lattice-mismatched heterosystem AlN/Si(111) for application in SAW devices

W. Richter, J. Schulze, M. Weihnacht, 1999 .

Investigation of two-dimensional growth of AlN(0 0 0 1) on Si(1 1 1) by plasma-assisted molecular beam epitaxy

W. Richter, J. Schulze, U. Kaiser, 1999 .

Direct-indirect GeSn band structure formation by laser Radiation: The enhancement of Sn solubility in Ge

J. Schulze, M. Oehme, E. Kasper, 2020 .

Ultra-Low Energy LIF Neuron Using Si NIPIN Diode for Spiking Neural Networks

U. Ganguly, B. Das, J. Schulze, 2018, IEEE Electron Device Letters.

Electrically pumped lasing from Ge Fabry-Perot resonators on Si.

Erich Kasper, Marc Schmid, Michael Oehme, 2015, Optics express.

Boron surface phase on Si(111): atomic structure and Si overgrowth studied by scanning tunneling microscopy and work function measurement

J. Schulze, I. Eisele, H. Hoster, 2000 .

In-situ STM studies of the self-assembling formation of boron surface phases on Si(111)

J. Schulze, I. Eisele, H. Hoster, 2000 .

Formation and silicon overgrowth of √3 × √3-R30° boron surface phases on Si(111)

J. Schulze, I. Eisele, H. Hoster, 2002 .

The formation of silicon (111) boron surface phases and their influence on the epitaxial growth of silicon and germanium

Walter Hansch, Ignaz Eisele, C Fink, 2000 .

Self assembling growth of triangular pyramidal ge islands on a Si(111)–3×3–R30°–B surface phase

J. Schulze, I. Eisele, H. Baumgärtner, 2000 .

Investigation of capacitance voltage characteristics of strained Si/SiGe n-channel MODFET varactor

A. Shaker, J. Schulze, E. Kasper, 2016 .

Growth of Ain on Si(111) by Plasma-Assisted Molecular Beam Epitaxy: Application to Surface Acoustic Wave Devices

W. Richter, J. Schulze, M. Weihnacht, 1998 .

Contact resistivities of antimony-doped n-type Ge1−xSnx

J. Schulze, M. Oehme, V. Srinivasan, 2016 .

Electrical characterization of n-doped SiGeSn diodes with high Sn content

J. Schulze, B. Tillack, M. Oehme, 2018, Semiconductor Science and Technology.

Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas

G. Capellini, J. Schulze, B. Witzigmann, 2020, Nanotechnology.

Ge PIN photodetectors with nanohole arrays for refractive index sensing

J. Schulze, I. Fischer, S. Bechler, 2017, 2017 IEEE 14th International Conference on Group IV Photonics (GFP).

Invited) GeSn Photodetection and Electroluminescence Devices on Si

J. Schulze, M. Oehme, E. Kasper, 2013 .

Plating and Recrystallization of Galvanic Cu Films on Roll Annealed and Polycrystalline Cu Foils and the Effect of Intermediate Electroless Cu Layers

J. Schulze, S. Zarwell, T. Bernhard, 2022, 2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).

Conformal aluminum oxide coating of high aspect ratio structures using metalorganic chemical vapor deposition

J. Schulze, I. Eisele, O. Blank, 2006 .

Back-end-of-line CMOS-compatible diode fabrication with pure boron deposition down to 50 °C

Tomislav Suligoj, Lis K. Nanver, Xingyu Liu, 2019, ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC).

Weak localization and weak antilocalization in doped Ge1-y Sn y layers with up to 8% Sn

J. Schulze, M. Oehme, J. Schulze, 2020, Journal of physics. Condensed matter : an Institute of Physics journal.

Epitaxial growth at high rates with LEPECVD

J. Schulze, Y. Zhuang, C. Rosenblad, 1998 .

Vertical sige-based silicon-on-nothing (SON) technology for sub-30 nm MOS devices

J. Schulze, I. Eisele, T. Suligoj, 2005 .

Impact of Charge Trapping and Constant Voltage Stress on Epitaxial p-Ge -on-p- Si and HfO 2 based Al/HfO 2 /p-Ge -on- p-Si/Al structures

J. Schulze, S. Sharma, Robin Khosla, 2021 .

Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated on Si

J. Schulze, I. Fischer, D. Schwarz, 2022, Microelectron. J..

Modeling and design of an electrically pumped SiGeSn microring laser

G. Capellini, J. Witzens, J. Schulze, 2022, OPTO.

Examination and evaluation of La2O3 as gate dielectric for sub-100nm CMOS and DRAM technology

J. Schulze, F. Wiest, T. Sulima, 2005, Microelectron. Reliab..