U. Avci

发表

Tunneling field effect transistors: Device and circuit considerations for energy efficient logic opportunities

I. Young, U. Avci, D. Morris, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

A scaled floating body cell (FBC) memory with high-k+metal gate on thin-silicon and thin-BOX for 16-nm technology node and beyond

P. Chang, U. Avci, I. Ban, 2008, 2008 Symposium on VLSI Technology.

Comprehensive n- and pMOSFET Channel Material Benchmarking and Analysis of CMOS Performance Metrics Considering Quantum Transport and Carrier Scattering Effects

I. Young, U. Avci, Raseong Kim, 2020, IEEE Journal of the Electron Devices Society.

Floating Body Cell with Independently-Controlled Double Gates for High Density Memory

P. Chang, U. Avci, I. Ban, 2006, 2006 International Electron Devices Meeting.

Floating body cell (FBC) memory for 16-nm technology with low variation on thin silicon and 10-nm BOX

P. Chang, U. Avci, I. Ban, 2008, 2008 IEEE International SOI Conference.

Computational Study of Geometrical Designs for Source/Drain Contacts to Reduce Parasitic Resistance in Extremely Scaled MOSFETs

I. Young, U. Avci, Raseong Kim, 2019, IEEE Transactions on Electron Devices.

Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors

R. Kotlyar, I. Young, T. Linton, 2013 .

Study of TFET non-ideality effects for determination of geometry and defect density requirements for sub-60mV/dec Ge TFET

G. Dewey, B. Chu-Kung, J. Kavalieros, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

CMOS performance benchmarking of Si, InAs, GaAs, and Ge nanowire n- and pMOSFETs with Lg=13 nm based on atomistic quantum transport simulation including strain effects

I. Young, U. Avci, Raseong Kim, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Comparison of performance, switching energy and process variations for the TFET and MOSFET in logic

Ian A. Young, Rafael Rios, Uygar E. Avci, 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

Heterojunction TFET Scaling and resonant-TFET for steep subthreshold slope at sub-9nm gate-length

I. Young, U. Avci, 2013, 2013 IEEE International Electron Devices Meeting.

Energy efficiency comparison of nanowire heterojunction TFET and Si MOSFET at Lg=13nm, including P-TFET and variation considerations

Dmitri E. Nikonov, Ian A. Young, Rafael Rios, 2013, 2013 IEEE International Electron Devices Meeting.

Improving Energy Efficiency of Low-Voltage Logic by Technology-Driven Design

I. Young, Hong Wang, T. Karnik, 2018, IEEE Journal on Exploratory Solid-State Computational Devices and Circuits.

Physical Origin of Transient Negative Capacitance in a Ferroelectric Capacitor

Dmitri E. Nikonov, Ian A. Young, Sasikanth Manipatruni, 2017, 1709.03255.

Super-self-aligned back-gate∕double-gate planar transistors: Novel fabrication approach

S. Tiwari, U. Avci, Arvind Kumar, 2006 .

Transistors based on two-dimensional materials for future integrated circuits

E. Pop, T. Grasser, Zhihong Chen, 2021, Nature Electronics.

Few electron memories: finding the compromise between performance, variability and manufacturability at the nano-scale

A. Kumar, H. Silva, M.K. Kim, 2003, IEEE International Electron Devices Meeting 2003.

Nonvolatile Silicon Memory at the Nanoscale

Sandip Tiwari, Moon Kyung Kim, Uygar E. Avci, 2004 .

Ultrathin two-dimensional van der Waals asymmetric ferroelectric semiconductor junctions

Xianfan Xu, P. Ye, U. Avci, 2022, Journal of Applied Physics.

Inversion Charge Boost and Transient Steep-Slope Induced by Free-Charge-Polarization Mismatch in a Ferroelectric-Metal–Oxide–Semiconductor Capacitor

Dmitri E. Nikonov, Ian A. Young, Sou-Chi Chang, 2018, IEEE Journal on Exploratory Solid-State Computational Devices and Circuits.

Comparison of power and performance for the TFET and MOSFET and considerations for P-TFET

Ian A. Young, Rafael Rios, Kelin J. Kuhn, 2011, 2011 11th IEEE International Conference on Nanotechnology.

Asymmetric Metal/α-In2Se3/Si Crossbar Ferroelectric Semiconductor Junction.

P. Ye, U. Avci, N. Haratipour, 2021, ACS nano.

A Thermodynamic Perspective of Negative-Capacitance Field-Effect Transistors

Dmitri E. Nikonov, Ian A. Young, Sou-Chi Chang, 2017, IEEE Journal on Exploratory Solid-State Computational Devices and Circuits.

The ultimate CMOS device and beyond

M. D. Giles, I. Young, K. J. Kuhn, 2012, 2012 International Electron Devices Meeting.

Tunnel Field-Effect Transistors: Prospects and Challenges

Ian A. Young, Daniel H. Morris, Uygar E. Avci, 2015, IEEE Journal of the Electron Devices Society.

Back-floating gate non-volatile memory

A. Kumar, U. Avci, S. Tiwari, 2004, 2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573).

Advancing 2D Monolayer CMOS Through Contact, Channel and Interface Engineering

C. Rogan, M. Metz, U. Avci, 2021, 2021 IEEE International Electron Devices Meeting (IEDM).

Advancing Monolayer 2D NMOS and PMOS Transistor Integration From Growth to van der Waals Interface Engineering for Ultimate CMOS Scaling

M. Metz, U. Avci, A. Gupta, 2021, 2021 Symposium on VLSI Technology.

Source/Drain Doping Effects and Performance Analysis of Ballistic III-V n-MOSFETs

Ian A. Young, Uygar E. Avci, I. Young, 2015, IEEE Journal of the Electron Devices Society.

Computational Study of Temperature Effects on MOSFET Channel Material Benchmarking

I. Young, U. Avci, Raseong Kim, 2020, IEEE Electron Device Letters.

Comprehensive Performance Benchmarking of III-V and Si nMOSFETs (Gate Length = 13 nm) Considering Supply Voltage and OFF-Current

Ian A. Young, Uygar E. Avci, I. Young, 2015, IEEE Transactions on Electron Devices.

Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

Jacob L. Jones, Kun Hee Ye, S. Cheong, 2023, APL Materials.

Gate length scaling beyond Si: Mono-layer 2D Channel FETs Robust to Short Channel Effects

M. Metz, U. Avci, A. Penumatcha, 2022, 2022 International Electron Devices Meeting (IEDM).

Hafnia-Based FeRAM: A Path Toward Ultra-High Density for Next-Generation High-Speed Embedded Memory

Hai Helen Li, J. Kavalieros, M. Metz, 2022, 2022 International Electron Devices Meeting (IEDM).

FeRAM using Anti-ferroelectric Capacitors for High-speed and High-density Embedded Memory

J. Kavalieros, M. Metz, M. Radosavljevic, 2021, 2021 IEEE International Electron Devices Meeting (IEDM).

Nanoscale thin single-crystal silicon and its application to electronics

S. Tiwari, U. Avci, 2004 .

Are we there yet? Looking beyond the end of scaling in the Nanometer Era

Arvind Kumar, Lei Xue, Sandip Tiwari, 2003, SPIE Microtechnologies.