P. Fay

S. Chandrasekhar, C. Caneau, P. Fay, 1998, Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129).

Low-noise performance of monolithically integrated 12-Gb/s p-i-n/HEMT photoreceiver for long-wavelength transmission systems

S. Chandrasekhar, C. Caneau, P. Fay, 1998, IEEE Photonics Technology Letters.

A 15 GHz bandwidth lattice-matched InAlAs/InGaAs/InP HEMT-based OEIC photoreceiver

C. Caneau, P. Fay, I. Adesida, 1995, 1995 53rd Annual Device Research Conference Digest.

High performance E-mode InAlN/GaN HEMTs: Interface states from subthreshold slopes

G. Snider, D. Jena, H. Xing, 2010, 68th Device Research Conference.

Optically controlled tunable and reconfigurable Terahertz devices

P. Fay, Jun Ren, Zhenguo Jiang, 2017, 2017 IEEE National Aerospace and Electronics Conference (NAECON).

Epitaxial lift-off for III-nitride devices

P. Fay, R. McCarthy, C. Youtsey, 2019, III-Nitride Electronic Devices.

Wavelength dependent characteristics of high-speed metamorphic photodiodes

W. Hoke, P. Fay, I. Adesida, 2003, IEEE Photonics Technology Letters.

Long wavelength metamorphic double heterojunction In0.53Ga0.47As/InAlGaAs/In0.52Al0.48As photodiodes on GaAs substrates

W. Hoke, P. Fay, I. Adesida, 2001 .

The impact of a large bandgap drift region in long-wavelength metamorphic photodiodes

W. Hoke, P. Fay, I. Adesida, 2001, IEEE Photonics Technology Letters.

High‐speed graded‐channel AlGaN/GaN HEMTs with power added efficiency >70% at 30 GHz

J. Moon, P. Fay, E. Arkun, 2020, Electronics Letters.

Graded-Channel GaN-Based HEMTs for High Linearity Amplifiers at Millimeter-Wave

P. Fay, Gerardo Silva-Oelker, N. Venkatesan, 2019, 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS).

Fabrication and characterization of an InAlAs/InGaAs/InP ring oscillator using integrated enhancement- and depletion-mode high-electron mobility transistors

I. Adesida, G. Cueva, P. Fay, 1997, IEEE Electron Device Letters.

Monolithic integration of InAlAs/InGaAs/InP enhancement- and depletion-mode high electron mobility transistors

P. Fay, I. Adesida, A. Mahajan, 1996, International Electron Devices Meeting. Technical Digest.

High performance enhancement mode high electron mobility transistors (E-HEMTs) lattice matched to InP

C. Caneau, P. Fay, I. Adesida, 1996 .

Gigahertz operation of epitaxial graphene transistors

D. Jena, H. Xing, P. Fay, 2009, 2009 Device Research Conference.

Inductively coupled plasma etching of through-cell vias in III–V multijunction solar cells using SiCl4/Ar

P. Fay, A. Wibowo, Yuning Zhao, 2013 .

Physics-based nonlinear circuit model for coplanar waveguides on silicon substrates

P. Fay, P. Fay, Zhuowen Sun, 2005, IEEE Microwave and Wireless Components Letters.

A compact nonlinear model for coplanar waveguides on silicon substrates

P. Fay, Z. Sun, 2004, Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004..

Long wave infrared detection using dipole antenna-coupled metal-oxide-metal diodes

W. Porod, G. Bernstein, P. Fay, 2008, 2008 33rd International Conference on Infrared, Millimeter and Terahertz Waves.

Investigation of traps in strained-well InGaAs/GaAsSb quantum well photodiodes

A. Holmes, P. Fay, W. Chen, 2015 .

Characterization and impact of traps in lattice-matched and strain-compensated In1−xGaxAs/GaAs1−ySby multiple quantum well photodiodes

A. Holmes, P. Fay, Baile Chen, 2012, 70th Device Research Conference.

High-Bandwidth Plasma Sensor Suite for High-Speed High-Enthalpy Measurements

P. Fay, T. Corke, S. Morris, 2008 .

Projected performance of experimental InAs/GaAsSb/GaSb TFET as millimeter-wave detector

A. Seabaugh, E. Memišević, L. Wernersson, 2017, 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

Ferroelectric Polarization Switching Behavior of Hf0.5Zr0.5O2 Gate Dielectrics on Gallium Nitride High‐Electron‐Mobility‐Transistor Heterostructures

S. Datta, Chunlei Wu, P. Fay, 2019, physica status solidi (a).

Threshold Voltage Control in Al 0.72 Ga 0.28 N/AlN/GaN HEMTs by Work-Function Engineering

Yu Cao, D. Jena, H. Xing, 2010 .

Experimental observation of RF avalanche gain in GaN-based PN junction diodes

P. Fay, D. Bour, O. Aktas, 2015 .

MBE-Grown Ultra-shallow AlN/GaN HFET Technology

Yu Cao, D. Jena, H. Xing, 2007 .

Low-Loss Coplanar Waveguides on GaN-on-Si Substrates

P. Fay, W. Johnson, Lina Cao, 2018, IEEE Microwave and Wireless Components Letters.

Biologically-Inspired Cellular Machine Architectures

F. Werblin, L. Chua, T. Roska, 2006 .

Repeatable Room Temperature Negative Differential Conductance in GaN/AlN Resonant Tunneling Diodes

D. Jena, H. Xing, P. Fay, 2016, 1606.08100.

Via-hole fabrication for III-V triple-junction solar cells

P. Fay, A. Wibowo, Yuning Zhao, 2012 .

Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT

J. Moon, P. Fay, E. Arkun, 2021, IEEE Electron Device Letters.

High-speed Graded-channel GaN HEMTs with Linearity and Efficiency

J. Moon, P. Fay, E. Arkun, 2020, 2020 IEEE/MTT-S International Microwave Symposium (IMS).

Faceted sidewall etching of n-GaN on sapphire by photoelectrochemical wet processing

D. Jena, H. Xing, Wenjun Li, 2014 .

Investigation and Demonstration of a WR-4.3 Optically Controlled Waveguide Attenuator

P. Fay, J. Hesler, Zhenguo Jiang, 2017, IEEE Transactions on Terahertz Science and Technology.

Advanced photo-induced substrate-integrated waveguides using pillar-array structures for tunable and reconfigurable THz circuits.

P. Fay, Jun Ren, Lei Liu, 2020, Optics express.

Wafer fused AlGaAs/GaAs/GaN HBTs with current gain of ~ 20 and fT of ~ 2.6 GHz

H. Xing, P. Fay, Yu-Chia Chang, 2008, 2008 Device Research Conference.

High-voltage polarization-induced vertical heterostructure p-n junction diodes on bulk GaN substrates

D. Jena, H. Xing, P. Fay, 2015, 2015 73rd Annual Device Research Conference (DRC).

Enhancement-Mode Pseudomorphic $\hbox{In}_{0.22} \hbox{Ga}_{0.78}\hbox{As}$-Channel MOSFETs With Ultrathin InAlP Native Oxide Gate Dielectric and a Cutoff Frequency of 60 GHz

P. Fay, X. Xing, 2010, IEEE Electron Device Letters.

Microwave performance and modeling of InAs/AlSb/GaSb resonant interband tunneling diodes

Patrick Fay, Joel N. Schulman, Jiang Lu, 2002 .

160 GHz enhancement-mode InAlAs/InGaAs/InP high electron mobility transistor

C. Caneau, P. Fay, I. Adesida, 1996, 1996 54th Annual Device Research Conference Digest.

SiC Substrate-Integrated Waveguides for High-Power Monolithic Integrated Circuits Above 110 GHz

James C. M. Hwang, D. Jena, H. Xing, 2021, 2021 IEEE MTT-S International Microwave Symposium (IMS).

Bias-enhanced lateral photoelectrochemical etching of GaN for the fabrication of undercut micromachined system structures

P. Fay, Bo-Zhong Yang, 2006 .

Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates

E. Beam, P. Fay, R. McCarthy, 2018, physica status solidi (a).

High-Voltage Vertical GaN p-n Diodes by Epitaxial Liftoff From Bulk GaN Substrates

E. Beam, P. Fay, R. McCarthy, 2018, IEEE Electron Device Letters.

Graphene devices

S. Koswatta, H. Xing, P. Fay, 2009, 2009 Device Research Conference.

Coded-Aperture Imaging Using Photo-Induced Reconfigurable Aperture Arrays for Mapping Terahertz Beams

H. Xing, P. Fay, S. Rahman, 2013, IEEE Transactions on Terahertz Science and Technology.

Work-function engineering in novel high Al composition Al0.72Ga0.28N/AlN/GaN HEMTs

Yu Cao, D. Jena, H. Xing, 2010, 68th Device Research Conference.

Delta-Doped Si/SiGe Zero-Bias Backward Diodes for Micro-Wave Detection

P. R. Berger, P. Fay, P. Thompson, 2007, 2007 65th Annual Device Research Conference.

Experimental investigation of the temperature dependence of InAs-AlSb-GaSb Resonant Interband tunnel diodes

J. Schulman, P. Fay, D. Chow, 2004, IEEE Transactions on Electron Devices.

A 200 GHz Fully Integrated, Polarization-Resolved Quasi-Optical Detector Using Zero-Bias Heterostructure Backward Diodes

P. Fay, Lei Liu, Peizhao Li, 2022, IEEE Microwave and Wireless Components Letters.

A Cost-Effective Approach for Achieving Subwavelength THz Imaging Using Photoinduced Coded-Apertures on Mesa-Array Structures

P. Fay, Lei Liu, Li-Jing Cheng, 2022, IEEE Transactions on Terahertz Science and Technology.

Performance dependence of InGaP/InGaAs/GaAs pHEMTs on gate metallization

P. Fay, N. Pan, J. Elliot, 1999, IEEE Electron Device Letters.

Radio frequency operation of clocked quantum-dot cellular automata latch

A. Orlov, G. Snider, P. Fay, 2009 .

Towards real-time testing of clocked Quantum Dot Cellular Automata

A. Orlov, G. Snider, P. Fay, 2009, 2009 IEEE Nanotechnology Materials and Devices Conference.

GaN heterostructure barrier diodes (HBD) with polarization-induced delta-doping

D. Jena, H. Xing, P. Fay, 2013, 71st Device Research Conference.

High Performance Photo-Induced Substrate-Integrated Waveguide for Tunable and Reconfigurable THz Circuits

P. Fay, L. Liu, Y. Deng, 2018 .

Power Amplification at THz via Plasma Wave Excitation in RTD-Gated HEMTs

Lei Liu, D. Jena, P. Fay, 2013, IEEE Transactions on Terahertz Science and Technology.

Microwave detection performance of In_0.53Ga_0.47As/GaAs_0.5Sb_0.5 quantumâ•’well tunnel fieldâ•’effect transistors

J. Hoyt, Wenjun Li, P. Fay, 2016 .

The 2018 GaN power electronics roadmap

Alex Q. Huang, Yuhao Zhang, Xu Li, 2018, Journal of Physics D: Applied Physics.

FET THZ DETECTORS OPERATING IN THE QUANTUM CAPACITANCE LIMITED REGION

D. Jena, H. Xing, P. Fay, 2011 .

Sensitivity of Si-based zero-bias backward diodes for microwave detection

Patrick Fay, Paul R. Berger, Paul R. Berger, 2007 .

Characterization and Modeling of 22 nm FDSOI Cryogenic RF CMOS

S. Datta, P. Fay, A. Raychowdhury, 2021, IEEE Journal on Exploratory Solid-State Computational Devices and Circuits.

Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities up to 220 kA/cm2

Huili Grace Xing, Patrick Fay, Debdeep Jena, 2018 .

Defect detection in nano-scale transistors based on radio-frequency reflectometry

A. Orlov, G. Snider, P. Fay, 2011, 1109.4545.

New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes

Huili Grace Xing, Patrick Fay, Debdeep Jena, 2017 .

GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope

Patrick Fay, Bryan T. Spann, K. Bertness, 2018, IEEE Electron Device Letters.

Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors

Christopher J. Tassone, D. Kwon, Aranyak Mehta, 2022, Nature.

Level Spectrum and Charge Relaxation in a Silicon Double Quantum Dot Probed by Dual-Gate Reflectometry.

Maud Vinet, Marc Sanquer, Sylvain Barraud, 2016, Nano letters.

Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices

Moon J. Kim, S. Denbaars, S. Nakamura, 2017 .

Hf0.5Zr0.5O2-Based Ferroelectric Gate HEMTs With Large Threshold Voltage Tuning Range

S. Datta, Chunlei Wu, P. Fay, 2020, IEEE Electron Device Letters.

Polarization Recovery Behavior of Hf0.5Zr0.5O2 on Gallium Nitride HEMT Heterostructures

Chunlei Wu, Suman Datta, Patrick Fay, 2019, 2019 Device Research Conference (DRC).

Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz

Xiang Gao, P. Saunier, A. Ketterson, 2013, IEEE Electron Device Letters.

High-speed MSM/HEMT and p-i-n/HEMT monolithic photoreceivers

C. Caneau, Patrick Fay, Ilesanmi Adesida, 2002 .

High-speed InGaAs metal-semiconductor-metal photodetectors with thin absorption layers

P. Fay, I. Adesida, K. Vaccaro, 1997, IEEE Photonics Technology Letters.

Modeling of InGaAs MSM photodetector for circuit-level simulation

Sung-Mo Kang, Patrick Fay, Ilesanmi Adesida, 1996 .

InP Modified UTC-Photodiodes With Cliff Layer

J. Campbell, A. Beling, Wenjun Li, 2014 .

Computational analysis of novel high performance optically controlled RF switches for reconfigurable millimeterwave-to-THz circuits

P. Fay, Jun Ren, Lei Liu, 2021, OSA Continuum.

InGaAs metal-semiconductor-metal photodetectors with engineered Schottky barrier heights

Patrick Fay, Ilesanmi Adesida, W. Wohlmuth, 1996 .

Chemical mechanical planarization of gold

A. Orlov, G. Snider, H. Xing, 2014 .

Scanning tunneling microscope stimulated oxidation of silicon (100) surfaces

J. Lyding, P. Fay, I. Adesida, 1994 .

Epitaxial ScxAl1−xN on GaN exhibits attractive high-K dielectric properties

D. Jena, H. Xing, P. Fay, 2021, Applied Physics Letters.

Higher-k Zirconium Doped Hafnium Oxide (HZO) Trigate Transistors with Higher DC and RF Performance and Improved Reliability

S. Gupta, P. Fay, W. Chakraborty, 2021, 2021 Symposium on VLSI Technology.

Bio‐Inspired Nano‐Sensor‐Enhanced CNN Visual Computer

Wolfgang Porod, Patrick Fay, Angel Rodriguez-Vazquez, 2004, Annals of the New York Academy of Sciences.

III-N polarization-graded transistors for millimeter-wave applications—Understanding and future potential

J. Moon, P. Fay, S. Rajan, 2022, Applied Physics Letters.

Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates

Roy A. Stillwell, P. Fay, A. Hoffman, 2018, Applied Physics Letters.

Electron mobility and velocity in Al0.45Ga0.55N-channel ultra-wide bandgap HEMTs at high temperatures for RF power applications

G. Simin, P. Fay, Asif Khan, 2022, Applied Physics Letters.

Growth of InAs on Si substrates at low temperatures using metalorganic vapor phase epitaxy

A. Seabaugh, P. Fay, T. Kuech, 2008 .

Microwave Performance of Ferroelectric-Gated GaN HEMTs

S. Datta, E. Beam, Chunlei Wu, 2020, 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).

Molybdenum Carbamate Nanosheets as a New Class of Potential Phase Change Materials.

P. Fay, T. Luo, M. Zhukovskyi, 2017, Nano letters.

TFET-based well capacity adjustment in active pixel sensor for enhanced high dynamic range

Michael Niemier, Xiaobo Sharon Hu, Ricardo Carmona-Galán, 2017 .

Geometry dependent tunnel FET performance - dilemma of electrostatics vs. quantum confinement

Yeqing Lu, W. Haensch, S. E. Laux, 2010, 68th Device Research Conference.

Effect of Fringing Capacitances on the RF Performance of GaN HEMTs With T-Gates

E. Beam, D. Jena, H. Xing, 2014, IEEE Transactions on Electron Devices.

Dispersion-free operation in InAlN-based HEMTs with ultrathin or no passivation

Huili Grace Xing, Ronghua Wang, O. Laboutin, 2013, 2013 IEEE International Electron Devices Meeting.

Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz

G. Snider, D. Jena, H. Xing, 2013 .

Time delay analysis in high speed gate-recessed E-mode InAlN HEMTs

G. Snider, E. Beam, D. Jena, 2013 .

Quaternary Barrier InAlGaN HEMTs With $f_{T}/f_{\max}$ of 230/300 GHz

Yu Cao, Zongyang Hu, Ronghua Wang, 2013, IEEE Electron Device Letters.

Monolithically integrated E/D-mode InAlN HEMTs with ƒt/ƒmax > 200/220 GHz

E. Beam, D. Jena, H. Xing, 2012, Device Research Conference.

Source-drain distance scaling and its effect on fringing capacitance in ultra-high speed GaN HEMTs

E. Beam, D. Jena, H. Xing, 2013 .

InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and fT/fmax of 260/220 GHz

Yu Cao, Patrick Fay, Zongyang Hu, 2012 .

Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance

Xiang Gao, Ronghua Wang, Shiping Guo, 2010, IEEE Electron Device Letters.

High-performance monolithically-integrated E/D mode InAlN/AlN/GaN HEMTs for mixed-signal applications

Patrick Fay, Xiang Gao, Paul Saunier, 2010, 2010 International Electron Devices Meeting.

210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation

Yu Cao, Ronghua Wang, O. Laboutin, 2011, IEEE Electron Device Letters.

Beyond power: III-N devices for low-power systems, millimeter-wave applications, and more

P. Fay, Y. Zhao, W. Li, 2016, 2016 31st Symposium on Microelectronics Technology and Devices (SBMicro).

InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and f_{\text{T}}/f_{\text{max}} of 260/220 GHz

Yu Cao, G. Snider, D. Jena, 2013 .

Saturation-compensated measurements for fluorescence lifetime imaging microscopy.

Patrick Fay, Yide Zhang, Scott S Howard, 2017, Optics letters.

AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance

Yu Cao, D. Jena, P. Fay, 2008, IEEE Electron Device Letters.

360 GHz fMAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications

J. Moon, P. Fay, E. Arkun, 2020, IEEE Electron Device Letters.

Design, fabrication, and performance of high-speed monolithically integrated InAlAs/InGaAs/InP MSM/HEMT photoreceivers

S. Chandrasekhar, Patrick Fay, Catherine Caneau, 1997 .

Breaking the Efficiency Barrier for Ambient Microwave Power Harvesting With Heterojunction Backward Tunnel Diodes

Ke Wu, Wenjun Li, Simon Hemour, 2015, IEEE Transactions on Microwave Theory and Techniques.

Threshold Voltage Control in $\hbox{Al}_{0.72} \hbox{Ga}_{0.28}\hbox{N/AlN/GaN}$ HEMTs by Work-Function Engineering

Yu Cao, Ronghua Wang, Xiu Xing, 2010, IEEE Electron Device Letters.

High-Gain, High-Efficiency Integrated Cavity-Backed Dipole Antenna at Ka-Band

Zhuowen Sun, P. Fay, P. Fay, 2006, IEEE Antennas and Wireless Propagation Letters.

Thin-film GaN Schottky diodes formed by epitaxial lift-off

Patrick Fay, Edward Beam, Jinqiao Xie, 2017 .

First demonstration of strained AlN/GaN/AlN quantum well FETs on SiC

D. Jena, H. Xing, P. Fay, 2016, Device Research Conference.

Incorporating specific absorption rate constraints into wireless signal design

David James Love, Patrick Fay, Jianming Jin, 2014, IEEE Communications Magazine.

High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination

Patrick Fay, Lina Cao, Edward Beam, 2018, Applied Physics Letters.

N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates

Zexuan Zhang, D. Jena, H. Xing, 2023, Applied Physics Letters.

Development of Optically Controlled Tunable/Reconfigurable Terahertz Waveguide Circuits/Components For Advanced Sensing and Adaptive Wireless Communications

P. Fay, J. Hesler, Jun Ren, 2019, 2019 IEEE National Aerospace and Electronics Conference (NAECON).

Extraordinary permittivity characterization of 4H SiC at millimeter-wave frequencies

P. Fay, M. J. Asadi, Lei Li, 2023, Applied Physics Letters.

Extraordinary Permittivity Characterization Using 4H-SiC Substrate-Integrated-Waveguide Resonators

P. Fay, M. J. Asadi, Erdem Ozdemir, 2023, ARFTG Microwave Measurement Conference.

Polarization-induced zener tunnel junctions in wide-bandgap heterostructures

Ze Zhang, D. Jena, P. Fay, 2009, 2009 Device Research Conference.

Tunable antenna-coupled metal-oxide-metal (MOM) uncooled IR detector (Invited Paper)

W. Porod, A. Zarandy, Pashang Esfandiari, 2005, SPIE Defense + Commercial Sensing.

Bulk and interfacial deep levels observed in In0.53Ga0.47As/GaAs0.5Sb0.5 multiple quantum well photodiode

Patrick Fay, Baile Chen, Jinrong Yuan, 2012 .

Avalanche Multiplication Noise in GaN p–n Junctions Grown on Native GaN Substrates

P. Fay, Jingshan Wang, Lina Cao, 2019, physica status solidi (b).

Thermally Resilient Microwave Switch and Power Limiter based on Insulator-Metal Transition of Lanthanum Cobalt Oxide

P. Fay, D. Streit, N. Orloff, 2022, 2022 International Electron Devices Meeting (IEDM).

Frequency response of LaAlO3/SrTiO3 all-oxide field-effect transistors

A. Seabaugh, P. Ye, R. Gordon, 2012 .

Frequency response of LaAlO 3 / SrTiO 3 all-oxide field-effect transistors

A. Seabaugh, P. Ye, R. Gordon, 2017 .

' s personal copy Frequency response of LaAlO 3 / SrTiO 3 all-oxide field-effect transistors

A. Seabaugh, P. Ye, R. Gordon, 2012 .

Vertical InGaAs/InP Tunnel FETs With Tunneling Normal to the Gate

Rui Li, Chen Chen, Qin Zhang, 2011, IEEE Electron Device Letters.

Antenna length and polarization response of antenna-coupled MOM diode infrared detectors

Wolfgang Porod, Gergo P. Szakmany, Gary H. Bernstein, 2010 .

Quilt Packaging: High-Density, High-Speed Interchip Communications

Qing Liu, W. Porod, G.H. Bernstein, 2007, IEEE Transactions on Advanced Packaging.

Fabrication and Performance of 0.25-$\mu$m Gate Length Depletion-Mode GaAs-Channel MOSFETs With Self-Aligned InAlP Native Oxide Gate Dielectric

Jing Zhang, P. Fay, P. Fay, 2008, IEEE Electron Device Letters.

A terahertz reconfigurable photo-induced fresnel-zone-plate antenna for dynamic two-dimensional beam steering and forming

Lei Liu, Patrick Fay, Zhenguo Jiang, 2015, 2015 IEEE MTT-S International Microwave Symposium.

Advanced Terahertz Sensing and Imaging Systems Based on Integrated III-V Interband Tunneling Devices

Lei Liu, Wenjun Li, Zhenguo Jiang, 2017, Proceedings of the IEEE.

W-Band Graded-Channel GaN HEMTs With Record 45% Power-Added-Efficiency at 94 GHz

J. Moon, P. Fay, E. Arkun, 2023, IEEE Microwave and Wireless Technology Letters.

Ferroelectric-Gated GaN HEMTs for RF and mm-Wave Switch Applications

Yu Cao, E. Beam, Chunlei Wu, 2022, 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).

Impact of GaN channel scaling in InAlN/GaN HEMTs

Dong Seup Lee, P. Fay, B. Lu, 2011, 2011 International Electron Devices Meeting.

Design of a tunable Fabry-Perot interferometer/photodiode (FPI/PD) spectral image sensor in visible wavelength range

Wolfgang Porod, Gary H. Bernstein, Patrick Fay, 2006, SPIE MOEMS-MEMS.

15 GHz monolithic MODFET-MSM integrated photoreceiver operating at 1.55 mu m wavelength

Patrick Fay, Catherine Caneau, Ilesanmi Adesida, 1995 .

Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching

Patrick Fay, Kamran Forghani, Andy Xie, 2017 .

Coplanar waveguide performance comparison of GaN-on-Si and GaN-on-SiC substrates

P. Fay, W. Johnson, Lina Cao, 2017, 2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

Direct electrical observation of plasma wave-related effects in GaN-based two-dimensional electron gases

Huili Grace Xing, Patrick Fay, Berardi Sensale-Rodriguez, 2014 .

W-Band GaN IMPATT Diodes for High Power Millimeter-Wave Generation

P. Fay, Jingshan Wang, Lina Cao, 2019, 2019 IEEE National Aerospace and Electronics Conference (NAECON).

InAs/AlGaSb heterojunction tunnel field‐effect transistor with tunnelling in‐line with the gate field

Huili Grace Xing, Chen Chen, Rui Li, 2012 .

Highly Linear and Efficient mm-Wave GaN HEMTs and MMICs

J. Moon, P. Fay, E. Arkun, 2022, 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022.

Vertical GaN-on-GaN p-n Diodes with 10-A Forward Current and 1.6 kV Breakdown Voltage

C. Youtsey, Patrick Fay, L. Cao, 2018, 2018 76th Device Research Conference (DRC).

High-power Density W-band MMIC Amplifiers using Graded-channel GaN HEMTs

J. Moon, P. Fay, E. Arkun, 2023, 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023.

Cryogenic RF CMOS on 22nm FDSOI Platform with Record fT=495GHz and fMAX=497GHz

P. Fay, A. Raychowdhury, W. Chakraborty, 2021, 2021 Symposium on VLSI Technology.

Electric Field Engineering in Graded-Channel GaN-Based HEMTs

J. Moon, P. Fay, N. Venkatesan, 2021, BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium.

Investigation of Quilt Packaging Interchip Interconnect With Solder Paste

Gary H. Bernstein, Patrick Fay, Alfred M. Kriman, 2014, IEEE Transactions on Components, Packaging and Manufacturing Technology.

317 GHz InAlGaN/GaN HEMTs with extremely low on‐resistance

Dong Seup Lee, E. Beam, P. Fay, 2013 .

Dark current suppression in GaAs metal-semiconductor-metal photodetectors

I. Adesida, P. Fay, P. Fay, 1996, IEEE Photonics Technology Letters.

High-Speed Photodetectors and Photoreceivers

P. Fay, 2006 .

Optically controlled reconfigurable terahertz waveguide filters based on photo-induced electromagnetic band gap structures using mesa arrays

P. Fay, Jun Ren, Lei Liu, 2018, OSA Continuum.

Characterization and modeling of InGaAs/InAsP thermophotovoltaic converters under high illumination intensities

Patrick Fay, David A. Scheiman, David V. Forbes, 2007 .

Computational analysis of optically controlled reconfigurable terahertz mesh filters using mesa arrays

P. Fay, Lei Liu, Yu Shi, 2021, Microwave and Optical Technology Letters.

Universal Charge-Conserving TFET SPICE Model Incorporating Gate Current and Noise

Trond Ytterdal, Hao Lu, Wenjun Li, 2016, IEEE Journal on Exploratory Solid-State Computational Devices and Circuits.

Optimization methods for achieving high diffraction efficiency with perfect electric conducting gratings

Patrick Fay, Rub'en Aylwin, Carlos Jerez-Hanckes, 2020, Journal of the Optical Society of America. A, Optics, image science, and vision.

0.3-μm gate-length enhancement mode InAlAs/InGaAs/InP high-electron mobility transistor

C. Caneau, I. Adesida, P. Fay, 1997, IEEE Electron Device Letters.

Ring oscillator using InAlAs/InGaAs/InP enhancement/depletion-mode high electron mobility transistor direct-coupled FET logic inverters

P. Fay, I. Adesida, A. Mahajan, 1997, Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials.

18.5-GHz bandwidth monolithic MSM/MODFET photoreceiver for 1.55-μm wavelength communication systems

C. Caneau, P. Fay, I. Adesida, 1996, IEEE Photonics Technology Letters.

Atomic-scale ferroic HfO2-ZrO2 superlattice gate stack for advanced transistors

Christopher J. Tassone, D. Kwon, Aranyak Mehta, 2021 .

Electrical properties of inalp native oxides for metal-oxide-semiconductor device applications

Patrick Fay, Jacek B. Jasinski, Russell D. Dupuis, 2004 .

Etch rate and surface morphology control in photoelectrochemical etching of GaN

P. Fay, Bo-Zhong Yang, 2004 .

Electrical characterization of native-oxide InAlP/GaAs metal-oxide-semiconductor heterostructures using impedance spectroscopy

R. Dupuis, P. Fay, Xiaohong Zhang, 2004 .

13.6 Self-Aligned In0.53Ga0.47As/InAs/InP Vertical Tunnel FETs

A. Seabaugh, S. Koswatta, J. Kuo, 2011 .

Tunable and reconfigurable THz devices for advanced imaging and adaptive wireless communication

Lei Liu, Patrick Fay, Md. Itrat Bin Shams, 2016, NanoScience + Engineering.

Design and characterisation of a 200 GHz tunable lens-coupled annular-slot antenna with a 50 GHz tuning range

Lei Liu, Patrick Fay, Zhenguo Jiang, 2014 .

Multiband terahertz quasi-optical balanced hot-electron mixers based on dual-polarization sinuous antennas

Lei Liu, Patrick Fay, Zhenguo Jiang, 2014, Sensing Technologies + Applications.

Microwave performance of GaAs MOSFET with wet thermally oxidized InAlP gate dielectric

P. Fay, T. Kosel, D. Hall, 2006, IEEE Electron Device Letters.

GaAs MOSFET using InAlP native oxide as gate dielectric

N. Pan, A. Wibowo, P. Fay, 2004, IEEE Electron Device Letters.

INFORMATION AND NANO TECHNOLOGIES IN AN INTRODUCTORY ENGINEERING COURSE

Wolfgang Porod, Gary H. Bernstein, Patrick Fay, 2006 .

High-temperature tungsten-hafnia optimized selective thermal emitters for thermophotovoltaic applications

P. Fay, C. Jerez-Hanckes, Gerardo Silva-Oelker, 2019, Journal of Quantitative Spectroscopy and Radiative Transfer.

DC and RF performance of 0.25 μm p-type SiGe MODFET

B. Meyerson, K. Ismail, P. Fay, 1996, IEEE Electron Device Letters.

Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned

Rui Li, Soo Doo Chae, Qin Zhang, 2012, IEEE Electron Device Letters.