Qing-Tai Zhao

S. Mantl, Qing-Tai Zhao, B. Hollander, 2015, 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM).

20nm Gate length Schottky MOSFETs with ultra thin NiSi/epitaxial NiSi 2 source/drain

S. Trellenkamp, K. Bourdelle, S. Mantl, 2011 .

Low temperature measurements of Schottky-barrier SOI-MOSFETs with dopant segregation

J. Knoch, S. Mantl, Qing-Tai Zhao, 2005 .

Silicon-Based Cooling Elements

Hung Q. Nguyen, P. Mauskopf, Qing-Tai Zhao, 2014 .

Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance

S. Mantl, A. Ionescu, A. Saeidi, 2018, Nanotechnology.

Effect of Negative Capacitance on Tunnel FETs DC Performance

S. Mantl, A. Ionescu, A. Saeidi, 2017 .

DC/AC Compact Modeling of TFETs for Circuit Simulation of Logic Cells Based on an Analytical Physics-Based Framework

F. Lime, B. Iñíguez, Qing-Tai Zhao, 2017, 2017 Austrochip Workshop on Microelectronics (Austrochip).

Diameter Scaling of Vertical Ge Gate- All-Around Nanowire pMOSFETs

S. Trellenkamp, J. Hartmann, J. Knoch, 2020, IEEE Transactions on Electron Devices.

Enhancement-Mode LaLuO3–AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors Using Fluorine Plasma Ion Implantation

Kevin J. Chen, Qing-Tai Zhao, Sen Huang, 2013 .

AlGaN/GaN MISHEMTs With High-κ

Kevin J. Chen, Hongwei Chen, Qing-Tai Zhao, 2012 .

AlGaN/GaN MISHEMTs With High-$\kappa \ \hbox{LaLuO}_{3}$ Gate Dielectric

Hongwei Chen, Qing-Tai Zhao, J. Schubert, 2012, IEEE Electron Device Letters.

Analog and RF analysis of gate all around silicon nanowire MOSFETs

J. Raskin, S. Trellenkamp, S. Mantl, 2017, 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).

Ion beam defect engineering in semiconductors and optoelectric materials

Qing-Tai Zhao, Ke-ming Wang, B. Shi, 1996 .

Self-Assembly CoSi 2 -Nanostructures for Fabrication of Schottky Barrier MOSFETs on SOI

S. Winnerl, S. Mantl, Qing-Tai Zhao, 2001 .

Dislocation-Based Si-Nanodevices

Manfred Reiche, Siegfried Mantl, Dan Buca, 2009 .

Formation of a highly Erbium doped silicon-on-insulator layer by introducing SiOx on or into a silicon surface

Qing-Tai Zhao, Xue-Lin Wang, Ming Chen, 2012 .

Gettering effects in BF2‐implanted Si(100) by ion‐beam defect engineering

Qing-Tai Zhao, Tian‐Bing Xu, Zhong-Lie Wang, 1995 .

Al2O3/NbAlO/Al2O3 sandwich gate dielectric film on InP

David-Wei Zhang, Qingqing Sun, Qing-Tai Zhao, 2010 .

Epitaxial growth and properties of NiSiGe

B. Zhang, S. Mantl, G. Mussler, 2012, 2012 12th International Workshop on Junction Technology.

First Demonstration of Vertical Ge0.92Sn0.08/Ge and Ge GAA Nanowire nMOSFETs with Low SS of 66 mV/dec and Small DIBL of 35 mV/V

J. Hartmann, J. Knoch, Qing-Tai Zhao, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Experimental Investigation on Alloy Scattering in sSi/ ${\rm Si}_{0.5}{\rm Ge}_{0.5}$/sSOI Quantum-Well p-MOSFET

B. Zhang, Qing-Tai Zhao, Yi Zhao, 2014, IEEE Transactions on Electron Devices.

Fabrication of Schottky barrier MOSFETs on SOI by a self-assembly CoSi2-patterning method

S. Winnerl, S. Mantl, Qing-Tai Zhao, 2003 .

Characterization of gadolinium oxide film by pulse laser deposition

Qing-Tai Zhao, Dapeng Xu, Xinhong Cheng, 2009 .

Electrical and Structural Properties of Ternary Rare-Earth Oxides on Si and Higher Mobility Substrates and their Integration as High-k Gate Dielectrics in MOSFET Devices

S. Mantl, Qing-Tai Zhao, A. Nichau, 2011 .

Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field- effect transistors

K. Bourdelle, S. Mantl, Qing-Tai Zhao, 2011 .

LONGITUDINAL AND TRANSVERSE MOMENTS OF THE DISTRIBUTION OF MEV TI IONS IMPLANTED IN SI MEASURED BY SIMS

Qing-Tai Zhao, Tian‐Bing Xu, Ke-ming Wang, 1995 .

Interfacial and electrical characterization of HfO2 gate dielectric film with a blocking layer of Al2O3

Qing-Tai Zhao, Xinhong Cheng, Yuehui Yu, 2009, 2009 10th International Conference on Ultimate Integration of Silicon.

Range profiles of Xe ions at energies from 50 to 400 keV in potassium titanyl phosphate

Qing-Tai Zhao, Ke-ming Wang, B. Shi, 1990 .

Depth distribution of Hg ions at energies from 50 to 400 keV implanted in potassium titanyl phosphate

Qing-Tai Zhao, Yaogan Liu, Ke-ming Wang, 1990 .

Nanopatterning of epitaxial CoSi2 using oxidation in a local stress field and fabrication of nanometer metal-oxide-semiconductor field-effect transistors

S. Mantl, Qing-Tai Zhao, H. Bay, 2004 .

Transient negative capacitance and charge trapping in FDSOI MOSFETs with ferroelectric HfYOX

S. Mantl, Qing-Tai Zhao, T. C. U. Tromm, 2019, Solid-State Electronics.

Reduction of secondary defects in BF2 implanted Si(100) by ion beam defect engineering

Qing-Tai Zhao, Tian‐Bing Xu, J. Zhou, 1994 .

Impact of an ultra-thin Ti interlayer on the formation of NiSiGe/SiGe

B. Zhang, Qing-Tai Zhao, Xing Wei, 2015 .

Phase evolution of ultra-thin Ni silicide films on CF4 plasma immersion ion implanted Si

Qing-Tai Zhao, F. Torregrosa, Wenjie Yu, 2020, Nanotechnology.

Roughness improvement of the CoSi2/Si-interface for an application as buried silicide

S. Mantl, Qing-Tai Zhao, V. Dudek, 2007 .

Fabrication and Characterization of Enhancement-Mode High- $\kappa~{\rm LaLuO}_{3}$-AlGaN/GaN MIS-HEMTs

Shu Yang, Kevin J. Chen, Sen Huang, 2013, IEEE Transactions on Electron Devices.

Characterization of high-κ LaLuO3 thin film grown on AlGaN/GaN heterostructure by molecular beam deposition

Kevin J. Chen, Hongwei Chen, Qing-Tai Zhao, 2011 .

Vertical heterojunction Ge0.92Sn0.08/Ge gate-all-around nanowire pMOSFETs with NiGeSn contact

S. Trellenkamp, J. Hartmann, J. Knoch, 2020, Solid-State Electronics.

Distributions of implanted Fe ions in quartz crystal and silicon

Qing-Tai Zhao, Ke-ming Wang, B. Shi, 1990 .

Self-Assembled Patterning of Ultrathin Silicides by Local Oxidation

S. Mantl, Qing-Tai Zhao, B. Kabius, 1999 .

Schottky-barrier height tuning of NiGe/n-Ge contacts using As and P segregation

S. Mantl, Qing-Tai Zhao, D. Buca, 2008 .

Fabrication of nanometer Schottky-tunneling MOSFETs by a novel silicide nanopatterning method

Siegfried Mantl, Qing-Tai Zhao, L. Kappius, 1999, Advanced Lithography.

Nanometer patterning of epitaxial CoSi2/Si(100) for ultrashort channel Schottky barrier metal–oxide–semiconductor field effect transistors

S. Mantl, Qing-Tai Zhao, F. Klinkhammer, 1999 .

Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors

Joachim Knoch, Qing-Tai Zhao, C. Sandow, 2009 .

Demonstration of higher electron mobility in Si nanowire MOSFETs by increasing the strain beyond 1.3

S. Trellenkamp, K. Bourdelle, S. Mantl, 2015 .

Artificial Synapses Based on Ferroelectric Schottky Barrier Field-Effect Transistors for Neuromorphic Applications.

D. Grützmacher, Qing-Tai Zhao, A. Tiedemann, 2021, ACS Applied Materials and Interfaces.

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

S. Mantl, A. Ionescu, Qing-Tai Zhao, 2017, Scientific Reports.

Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study

Adrian M. Ionescu, Christian C. Enz, Farzan Jazaeri, 2017, IEEE Electron Device Letters.

Steep slope negative capacitance FDSOI MOSFETs with ferroelectric HfYOx

S. Mantl, Qing-Tai Zhao, T. C. U. Tromm, 2018, 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).

Ion-induced crystallization and amorphization at crystal/amorphous interfaces of silicon

Qing-Tai Zhao, N. Itoh, N. Matsunami, 1995 .

Impact of Al addition on the formation of Ni germanosilicide layers under different temperature annealing

Qing-Tai Zhao, Xing Wei, Miao Zhang, 2017 .

Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation

Joachim Knoch, Dan Buca, Qing-Tai Zhao, 2010 .

Tuning of NiSi/Si Schottky barrier heights by sulfur segregation during Ni silicidation

Qing-Tai Zhao, S. Mantl, S. Mantl, 2005 .

Ultrathin epitaxial Ni-silicide contacts on (100) Si and SiGe: Structural and electrical investigations

J. Hartmann, S. Mantl, L. Knoll, 2013 .

Epitaxial growth of Ni"Al…Si0.7Ge0.3 on Si0.7Ge0.3/Si"100… by Al interlayer mediated epitaxy

B. Holländer, J. Hartmann, S. Mantl, 2011 .

Epitaxial growth of NiSi_2 induced by sulfur segregationat the NiSi_2/Si(100) interface

C. Jia, S. Mantl, Qing-Tai Zhao, 2009 .

NiSi2/Si interface chemistry and epitaxial growth mode

C. Jia, S. Mantl, Qing-Tai Zhao, 2009 .

Segregation of ion implanted sulfur in Si(100) after annealing and nickel silicidation

S. Mantl, Qing-Tai Zhao, U. Breuer, 2007 .

Homogeneous NiSi1-xGex layer formation on strained SiGe with ultrathin Ni layers

B. Holländer, S. Mantl, G. Mussler, 2015 .

Ultrathin homogeneous Ni(Al) germanosilicide layer formation on strained SiGe with Al/Ni multi-layers

B. Holländer, S. Mantl, G. Mussler, 2015 .

Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1−xGex layers

B. Holländer, S. Mantl, G. Mussler, 2013 .

Formation of NiSiGe on compressivly strained SiGe thin layers

Yi Wang, S. Mantl, G. Mussler, 2012, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology.

Improved NiSi0.8Ge0.2/Si0.8Ge0.2 Contacts by C+ Pre-Implantation

B. Holländer, J. Hartmann, S. Mantl, 2011 .

Formation of ternary Ni-silicide on relaxed and strained SiGe layers

R. Loo, M. Caymax, S. Mantl, 2004 .

Epitaxial GeSn/Ge Vertical Nanowires for p-Type Field-Effect Transistors with Enhanced Performance

J. Hartmann, J. Knoch, D. Grützmacher, 2020, ACS Applied Nano Materials.

Steep Switching Si Nanowire p-FETs With Dopant Segregated Silicide Source/Drain at Cryogenic Temperature

J. Knoch, D. Grützmacher, Qing-Tai Zhao, 2022, IEEE Electron Device Letters.

Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOI

Joachim Knoch, Qing-Tai Zhao, C. Sandow, 2010 .

Equivalent Trap Energy Level Extraction for SiGe Using Gate-Induced-Drain-Leakage Current Analysis

Qing-Tai Zhao, Yi Zhao, Wangran Wu, 2014 .

Analysis of GeSn-SiGeSn hetero-tunnel FETs

S. Mantl, A. Schenk, Qing-Tai Zhao, 2014, 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Investigation of band-to-band tunneling parameters in sige by using MOSFET GIDL current analysis

Qing-Tai Zhao, Wenjie Yu, Xi Wang, 2014, 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

2-D Physics-Based Compact DC Modeling of Double-Gate Tunnel-FETs

Benjamín Iñíguez, Fabian Horst, Atieh Farokhnejad, 2019, IEEE Transactions on Electron Devices.

Characteristics of Recessed-Gate TFETs With Line Tunneling

Jyi-Tsong Lin, Chih-Ting Yeh, Qing-Tai Zhao, 2018, IEEE Transactions on Electron Devices.

Ion-sensitive field-effect transistor with sSi/Si0.5Ge0.5/sSOI quantum-well for high voltage sensitivity

Qing-Tai Zhao, Z. Di, Wenjie Yu, 2016 .

Improved LDMOS performance with buried multi-finger gates

S. Trellenkamp, S. Mantl, Qing-Tai Zhao, 2014 .

Effects of MeV Si ion irradiation on the properties of shallow P + N junctions

Qing-Tai Zhao, Zhong-Lie Wang, Meiya Li, 1998 .

Investigation of Coulomb scattering on sSi/Si0.5Ge0.5/sSOI quantum-well p-MOSFETs*

Qing-Tai Zhao, Z. Di, Wenjie Yu, 2016 .

Lattice disorder in silicon induced by 2.0 MeV Cu+ irradiation

Qing-Tai Zhao, Tian‐Bing Xu, Ke-ming Wang, 1992 .

Experimental I – V and C – V Analysis of Schottky-Barrier Metal-Oxide-Semiconductor Field Effect Transistors with Epitaxial NiSi 2 Contacts and Dopant Segregation

Qing-Tai Zhao, Wenjie Yu, Xinke Liu, 2017 .

Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts

J. Hartmann, S. Mantl, G. Mussler, 2017 .

Effects of ion beam defect engineering on carrier concentration profiles in 50 keV P+‐implanted Si(100)

Qing-Tai Zhao, Tian‐Bing Xu, J. Zhou, 1993 .

Reduction of secondary defects in MeV ion-implanted silicon by means of ion beam defect engineering

J. R. Liefting, Qing-Tai Zhao, R. Schreutelkamp, 1992 .

Reduction of secondary defects in 50 keV P+-implanted Si(100) by MeV Si ion irradiation

Qing-Tai Zhao, Zhong-Lie Wang, 1996 .

Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells

Luca Selmi, Pierpaolo Palestri, Felice Crupi, 2015, IEEE Journal of the Electron Devices Society.

Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM

Pierpaolo Palestri, Sebastiano Strangio, Siegfried Mantl, 2017, 2017 47th European Solid-State Device Research Conference (ESSDERC).

Invited) Si Nanowire Tunnel FETs for Energy Efficient Nanoelectronics

S. Trellenkamp, S. Mantl, L. Knoll, 2015 .

Strained silicon based complementary tunnel-FETs: Steep slope switches for energy efficient electronics

S. Trellenkamp, K. Bourdelle, S. Mantl, 2014 .