S. Richter

发表

Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors

S. Trellenkamp, L. Selmi, K. Bourdelle, 2013, IEEE Electron Device Letters.

Strained silicon nanowire array MOSFETs with high-k/metal gate stack

S. Trellenkamp, K. Bourdelle, S. Mantl, 2012, 2012 13th International Conference on Ultimate Integration on Silicon (ULIS).

Strained Si and SiGe Nanowire Tunnel FETs for Logic and Analog Applications

S. Trellenkamp, K. Bourdelle, J. Hartmann, 2015, IEEE Journal of the Electron Devices Society.

Demonstration of improved transient response of inverters with steep slope strained Si NW TFETs by reduction of TAT with pulsed I-V and NW scaling

S. Trellenkamp, L. Selmi, K. Bourdelle, 2013, 2013 IEEE International Electron Devices Meeting.

Experimental demonstration of improved analog device performance of nanowire-TFETs

L. Selmi, S. Mantl, L. Knoll, 2015 .

Improved Tunnel-FET inverter performance with SiGe/Si heterostructure nanowire TFETs by reduction of ambipolarity

S. Trellenkamp, K. Bourdelle, J. Hartmann, 2015 .

Tunnel-FET inverters for ultra-low power logic with supply voltage down to VDD = 0.2 V

S. Trellenkamp, K. Bourdelle, S. Mantl, 2014, 2014 15th International Conference on Ultimate Integration on Silicon (ULIS).

Strained Silicon and Silicon-GermaniumNanowire Tunnel FETs and Inverters

S. Richter, 2014 .

Experimental demonstration of planar SiGe on Si TFETs with counter doped pocket

S. Trellenkamp, S. Wirths, S. Richter, 2015, EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon.

Si Nanowire tunnel FETs with epitaxial NiSi2 source/drain and dopant segregation

S. Trellenkamp, K. Bourdelle, S. Mantl, 2012, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology.

Si/SiGe hetero-structure tunneling field effect transistors with in-situ doped SiGe source

J. Hartmann, S. Mantl, L. Knoll, 2012, 2012 13th International Conference on Ultimate Integration on Silicon (ULIS).

Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors

J. Hartmann, S. Mantl, S. Richter, 2011, Ulis 2011 Ultimate Integration on Silicon.

Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells

Luca Selmi, Pierpaolo Palestri, Felice Crupi, 2015, IEEE Journal of the Electron Devices Society.

Invited) Si Nanowire Tunnel FETs for Energy Efficient Nanoelectronics

S. Trellenkamp, S. Mantl, L. Knoll, 2015 .

$\Omega$-Gated Silicon and Strained Silicon Nanowire Array Tunneling FETs

K. K. Bourdelle, C. Sandow, S. Mantl, 2012, IEEE Electron Device Letters.

Strained silicon based complementary tunnel-FETs: Steep slope switches for energy efficient electronics

S. Trellenkamp, K. Bourdelle, S. Mantl, 2014 .

SiGe on SOI nanowire array TFETs with homo- and heterostructure tunnel junctions

S. Trellenkamp, J. Hartmann, S. Mantl, 2013, 2013 14th International Conference on Ultimate Integration on Silicon (ULIS).

Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source

K. Bourdelle, J. Hartmann, S. Mantl, 2012, 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).