F. Mayer

Impact of SOI, Si1-xGexOI and GeOI substrates on CMOS compatible Tunnel FET performance

F. Andrieu, S. Deleonibus, B. Previtali, 2008, 2008 IEEE International Electron Devices Meeting.

Co-integration of 2 mV/dec Subthreshold Slope Impact Ionization MOS (I-MOS) with CMOS

S. Deleonibus, C. Tabone, F. Mayer, 2006, 2006 European Solid-State Device Research Conference.

Exhaustive experimental study of tunnel field effect transistors (TFETs): From materials to architecture

C. Le Royer, F. Mayer, C. Le Royer, 2009, 2009 10th International Conference on Ultimate Integration of Silicon.