J. Damlencourt

发表

Impact of SOI, Si1-xGexOI and GeOI substrates on CMOS compatible Tunnel FET performance

F. Andrieu, S. Deleonibus, B. Previtali, 2008, 2008 IEEE International Electron Devices Meeting.

Localized ultra-thin GeOI: An innovative approach to germanium channel MOSFETs on bulk Si substrates

G. Ghibaudo, T. Skotnicki, S. Monfray, 2008, 2008 IEEE International Electron Devices Meeting.

Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond

A. Toffoli, J. Cluzel, O. Faynot, 2010, 2010 Symposium on VLSI Technology.

42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide.

P. Crozat, J. Damlencourt, L. Vivien, 2009, Optics express.

Optical modulation by carrier depletion in a silicon PIN diode.

Xavier Le Roux, Delphine Marris-Morini, Eric Cassan, 2006, Optics express.

Germanium photodetector integrated in a Silicon-On-Insulator microwaveguide

X. Le Roux, D. Marris-Morini, P. Crozat, 2007, 2007 4th IEEE International Conference on Group IV Photonics.

Fabrication and mobility characteristics of SiGe surface channel pMOSFETs with a HfO/sub 2//TiN gate stack

J. Hartmann, O. Weber, F. Andrieu, 2006, IEEE Transactions on Electron Devices.

Engineered substrates for future More Moore and More than Moore integrated devices

O. Faynot, O. Weber, F. Andrieu, 2010, 2010 International Electron Devices Meeting.

Enhanced photoluminescence of heavily n-doped germanium

O. Kermarrec, D. Bensahel, J. Damlencourt, 2009 .

40 Gb/s surface-illuminated Ge-on-Si photodetectors

P. Crozat, J. Damlencourt, L. Vivien, 2009 .

High-$\kappa$ and Metal-Gate pMOSFETs on GeOI Obtained by Ge Enrichment: Analysis of ON and OFF Performances

R. Truche, Y. Campidelli, D. Bensahel, 2008, IEEE Electron Device Letters.

Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55μm operation

Paul Crozat, Eric Cassan, Laurent Vivien, 2005 .

GeOI pMOSFETs Scaled Down to 30-nm Gate Length With Record Off-State Current

O. Faynot, M. Vinet, C. Tabone, 2010, IEEE Electron Device Letters.

High quality Germanium On Insulator wafers with excellent hole mobility

Yves Morand, Sorin Cristoloveanu, Laurent Clavelier, 2007 .

Germanium on insulator and new 3D architectures opportunities for integration

J. Hartmann, P. Batude, M. Vinet, 2010 .

Electrical Transport at Room and Low Temperature in 3D Vertically Stacked SiGe and SiGeC Nanowires

E. Saracco, S. Cristoloveanu, J. Damlencourt, 2012 .

Characterization of photocatalytic paints: a relationship between the photocatalytic properties – release of nanoparticles and volatile organic compounds

J. Damlencourt, A. Benayad, L. Porcar, 2017 .

20nm gate length trigate pFETs on strained SGOI for high performance CMOS

X. Garros, O. Faynot, P. Batude, 2010, 2010 Symposium on VLSI Technology.

High-Performance Tunnel FETs on Advanced FDSOI Platform

J. Hartmann, M. Cassé, C. Tabone, 2014 .

Improved 1/f noise characterization of strained SiGe on insulator MOSFETs fabricated on wafers obtained by the Ge enrichment technique

J. Damlencourt, F. Martinez, M. Valenza, 2012 .

1/f noise in strained SiGe on Insulator MOSFETs

C. Le Royer, J. Damlencourt, F. Martinez, 2011, 2011 21st International Conference on Noise and Fluctuations.

Two-dimensional photonic crystals with germanium on insulator obtained by a condensation method

O. Kermarrec, D. Bensahel, J. Damlencourt, 2008 .

High hole mobility GeOI pMOSFETs with high-k / metal gate on Ge condensation wafers

S. Deleonibus, S. Cristoloveanu, Y. Morand, 2007, 2007 IEEE International SOI Conference.

Influence of paints formulations on nanoparticles release during their life cycle

J. Damlencourt, L. Golanski, B. Fiorentino, 2015, Journal of Nanoparticle Research.

42 GHz waveguide germanium-on-silicon vertical PIN photodetector

D. Marris-Morini, P. Crozat, L. Vivien, 2008, 2008 5th IEEE International Conference on Group IV Photonics.

Evaluation Of Ni(Si1-xGex) And Pt(Si1-xGex) Contact Resistance For FD-SOI PMOS Metallic Source And Drain

O. Cueto, F. Allain, M. Vinet, 2013 .

Low Temperature Epitaxy of Si and SiGe Using Disilane Based Chemistry for Electronic Purposes

J. Damlencourt, 2010 .

Physico-chemical state of the silicon atoms in the HfO2/SiO2/Si system

P. Jonnard, J. Damlencourt, I. Jarrige, 2004 .

Mushroom-Free Selective Epitaxial Growth of Si, SiGe and SiGe:B Raised Sources and Drains on FD-SOI MOSFETs

D. Dutartre, J. Hartmann, N. Loubet, 2012, 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).

Photoelectron spectroscopy study of the effect of substrate doping on an HfO2/SiO2/n-Si gate stack

J. Damlencourt, F. Maccherozzi, O. Renault, 2007 .

Surface preparation and post thermal treatment effects on interface properties of thin Al 2 O 3 films deposited by ALD

J. Damlencourt, F. Ducroquet, F. Martin, 2004 .

High mobility CMOS: First demonstration of planar GeOI p-FETs with SOI n-FETs

H. Grampeix, J. Hartmann, P. Batude, 2011 .

Ge Enrichment Technique on SiGe/SOI Mesa Islands: a Localized GeOI Structures Fabrication Method

J. Damlencourt, Y. Morand, D. Rouchon, 2008, ECS Transactions.

Optimisation and application of an analytical approach for the characterisation of TiO2 nanoparticles in food additives and pharmaceuticals by single particle inductively coupled plasma-mass spectrometry.

J. Damlencourt, D. Truffier-Boutry, P. Jitaru, 2020, Talanta.

Characterization of TiO2 Nanoparticles in Food Additives by Asymmetric-Flow Field-Flow Fractionation Coupled to Inductively Coupled Plasma-Mass Spectrometry—a Pilot Study

J. Damlencourt, S. Motellier, D. Truffier-Boutry, 2019, Food Analytical Methods.

Method of preparing a germanium layer from a substrate silicon-germanium-on-insulator

J. Damlencourt, B. Vincent, Y. Morand, 2007 .

METHOD FOR PRODUCING AREAS BASED Si1-y Ge y Ge DIFFERENT LEVELS ON THE SAME SUBSTRATE GERMANIUM CONDENSATION

J. Damlencourt, Y. Morand, L. Clavelier, 2006 .

Ge-on-Si photodetectors for optical communications

P. Crozat, J. Damlencourt, L. Vivien, 2009, 2009 35th European Conference on Optical Communication.

Tensile-strain and n-type doping of germanium-on-insulator : Towards a Ge laser

I. Sagnes, O. Kermarrec, D. Bensahel, 2009, 2009 6th IEEE International Conference on Group IV Photonics.

A benchmarking of silane, disilane and dichlorosilane for the low temperature growth of group IV layers

J. Hartmann, J. Damlencourt, T. Billon, 2012 .

Growth of Si nanocrystals on alumina and integration in memory devices

Thierry Baron, Frédéric Mazen, François Martin, 2003 .

Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics

S. Deleonibus, J. Damlencourt, J. Buckley, 2005 .

HfO2/SiO2 interface chemistry studied by synchrotron radiation x-ray photoelectron spectroscopy

Olivier Renault, P. Besson, François Martin, 2002 .

Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2O

Olivier Renault, François Martin, L. G. Gosset, 2002 .

Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(0 0 1) for microelectronics and optoelectronics purposes

Y. Bogumilowicz, G. Rolland, J. Hartmann, 2005 .

Electrical and physico-chemical characterization of HfO2/SiO2 gate oxide stacks prepared by atomic layer deposition

C. Leroux, X. Garros, J. Damlencourt, 2003 .

Surface treatment for the atomic layer deposition of HfO2 on silicon

J. Damlencourt, F. Martin, M. Semeria, 2005 .

Characterization of a HfO2/SiO2/Si system by X‐ray reflection and X‐ray emission spectroscopies

P. Jonnard, J. Damlencourt, J. Andre, 2006 .

Accurate depth profiling of dry oxidized SiGeC thin films by extended Full Spectrum ToF-SIMS

J. Hartmann, E. Saracco, J. Damlencourt, 2011 .

Source and Drain Contact Module for FDSOI MOSFETs : Silicidation and Strain Engineering

David Cooper, Yves Morand, Jean-Michel Hartmann, 2013 .

Thermal stability of the HfO2∕SiO2 interface for sub-0.1μm complementary metal-oxide-semiconductor gate oxide stacks: A valence band and quantitative core-level study by soft x-ray photoelectron spectroscopy

J. Damlencourt, F. Martin, O. Renault, 2004 .

Strained tunnel FETs with record ION: first demonstration of ETSOI TFETs with SiGe channel and RSD

O. Faynot, F. Andrieu, O. Weber, 2012, 2012 Symposium on VLSI Technology (VLSIT).

Paramorphic Growth: A New Approach in Mismatched Heteroepitaxy to Prepare Fully Relaxed Materials

M. Garrigues, J. Leclercq, J. Damlencourt, 1999 .

High quality fully relaxed In/sub 0.65/Ga/sub 0.35/As layers grown on InP using seed membranes

J. Damlencourt, P. Regreny, G. Hollinger, 2000, Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107).

High-quality fully relaxed In0.65Ga0.35As layers grown on InP using the paramorphic approach

J. Leclercq, J. Damlencourt, P. Regreny, 1999 .

Stacking fault generation during relaxation of silicon germanium on insulator layers obtained by the Ge condensation technique

J. Damlencourt, B. Vincent, V. Delaye, 2007 .

The Ge condensation technique: A solution for planar SOI/GeOI co-integration for advanced CMOS technologies?

Yves Morand, Yves Campidelli, Sorin Cristoloveanu, 2008 .

realization of structures Method GeOI localized obtained by enrichment gremanium

J. Damlencourt, B. Vincent, 2008 .

Investigation of SiO2/HfO2 gate stacks for application to non-volatile memory devices

Simon Deleonibus, Gerard Ghibaudo, Giuseppe Nicotra, 2005 .

Low-temperature characterization and modeling of advanced GeOI pMOSFETs: Mobility mechanisms and origin of the parasitic conduction

Emmanuel Augendre, Sorin Cristoloveanu, C. Le Royer, 2010 .

Metal-semiconductor-metal Ge photodetectors integrated in silicon waveguides

Paul Crozat, Delphine Marris-Morini, Eric Cassan, 2008 .

Silicon-Germanium multi-quantum well photodetectors in the near infrared.

C. Burrus, K. Saraswat, J. Chen, 2012, Optics express.

High Contrast 40gbit/s Optical Modulation in Silicon References and Links

T. J. Sleboda, W. Zortman, D. Trotter, 2022 .

A comparative 1/f noise study of GeOI wafers obtained by the Ge enrichment technique and the Smart Cut technology

E. Augendre, J. Damlencourt, F. Martinez, 2011 .

Review of Some Critical Aspects of Ge and GeOI Substrates

Yves Morand, Simon Deleonibus, Laurent Clavelier, 2006 .

Metal gate and high-k integration for advanced CMOS devices

Thomas Skotnicki, Sorin Cristoloveanu, Simon Deleonibus, 2003, 2003 8th International Symposium Plasma- and Process-Induced Damage..

75 nm damascene metal gate and high-k integration for advanced CMOS devices

X. Garros, S. Deleonibus, C. Leroux, 2002, Digest. International Electron Devices Meeting,.