B. Lu

发表

Extraction of Dynamic On-Resistance in GaN Transistors: Under Soft- and Hard-Switching Conditions

B. Lu, T. Palacios, D. Risbud, 2011, 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology

B. Lu, T. Palacios, 2010, IEEE Electron Device Letters.

A Fully Analytical Current Model for Tunnel Field-Effect Transistors Considering the Effects of Source Depletion and Channel Charges

B. Lu, Yuming Zhang, Hongliang Lu, 2018, IEEE Transactions on Electron Devices.

Logic gates realized by nonvolatile GeTe/Sb2Te3 super lattice phase-change memory with a magnetic field input

X. Miao, B. Lu, Xiaomin Cheng, 2016 .

Efficient thermal analysis method for large scale compound semiconductor integrated circuits based on heterojunction bipolar transistor

B. Lu, Yuming Zhang, Hongliang Lv, 2018, Chinese Physics B.

Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source

B. Lu, Yuming Zhang, Hongliang Lu, 2020 .

A Charge-Based Capacitance Model for Double-Gate Tunnel FETs With Closed-Form Solution

B. Lu, Yuming Zhang, Hongliang Lu, 2018, IEEE Transactions on Electron Devices.

Simulation and Fabrication of GaN-Based Vertical and Lateral Normally-off Power Transistors by

B. Lu, T. Palacios, L. Kolodziejski, 2013 .

Low leakage normally-off tri-gate GaN MISFET

B. Lu, T. Palacios, E. Matioli, 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor Citation

B. Lu, O. Saadat, Lu, 2010 .

On-Wafer Seamless Integration of GaN and Si (100) Electronics

B. Lu, T. Palacios, J. Chung, 2009, 2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium.

Advanced power electronic devices based on Gallium Nitride (GaN)

F. Gao, L. Xia, B. Lu, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

AlGaN/GaN-based power semiconductor switches

Bin Lu, B. Lu, 2013 .

A Technology Overview of the PowerChip Development Program

Charles R. Sullivan, Jun Chen, Jeffrey H. Lang, 2013, IEEE Transactions on Power Electronics.

(Invited) Wafer Bonding Technology in Nitride Semiconductors for Applications in Energy and Communications

B. Lu, T. Palacios, K. Ryu, 2010 .

Multi-state tunnel field effect transistor based on face tunneling with gate-source overlap

B. Lu, Hongliang Lv, Yuming Zhang, 2023, Solid-State Electronics.

Characteristics of InAs/GaSb Line-Tunneling FETs With Buried Drain Technique

B. Lu, Yuanhao Miao, Zhijun Lv, 2021, IEEE Transactions on Electron Devices.

A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

B. Lu, Hongliang Lv, Yimen Zhang, 2021, IEEE Transactions on Electron Devices.

A Fully Analytical Current Model for Gate–Source Overlap Tunneling FETs as the Ternary Devices

B. Lu, Yimen Zhang, Hongliang Lu, 2022, IEEE Transactions on Electron Devices.

Tri-Gate Normally-Off GaN Power MISFET

B. Lu, T. Palacios, E. Matioli, 2012, IEEE Electron Device Letters.

Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors

Feng Gao, James S. Speck, Carl V. Thompson, 2011 .

Impact of Moisture and Fluorocarbon Passivation on the Current Collapse of AlGaN/GaN HEMTs

Feng Gao, U. K. Mishra, Di Chen, 2012, IEEE Electron Device Letters.

Comparison of HfAlO, HfO2/Al2O3, and HfO2 on n-type GaAs using atomic layer deposition

B. Lu, Hongliang Lv, Yimen Zhang, 2016 .

An Etch-Stop Barrier Structure for GaN High-Electron-Mobility Transistors

B. Lu, T. Palacios, Min-Chul Sun, 2013, IEEE Electron Device Letters.

First-Principles-Based Quantum Transport Simulations of High-Performance and Low-Power MOSFETs Based on Monolayer Ga2O3.

B. Lu, Linpeng Dong, A. Tian, 2022, ACS applied materials & interfaces.

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor

B. Lu, T. Palacios, O. Saadat, 2010, IEEE Electron Device Letters.

Comparative Breakdown Study of Mesa- and Ion-Implantation-Isolated AlGaN/GaN High-Electron-Mobility Transistors on Si Substrate

Daniel Piedra, Hyung-Seok Lee, Tomas Palacios, 2012 .

Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors

B. Lu, T. Palacios, E. Piner, 2010, IEEE Electron Device Letters.

Ultralow Leakage Current AlGaN/GaN Schottky Diodes With 3-D Anode Structure

B. Lu, T. Palacios, E. Matioli, 2013, IEEE Transactions on Electron Devices.

A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter

Bin Lu, Yuming Zhang, Shizheng Yang, 2020, IEEE Access.

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

B. Lu, Hongliang Lu, Yimen Zhang, 2019, Nanomaterials.

Transport mechanisms of leakage current in Al 2 O 3 /InAlAs MOS capacitors

C. Jin, B. Lu, Hongliang Lu, 2016 .

Impact of GaN channel scaling in InAlN/GaN HEMTs

Dong Seup Lee, P. Fay, B. Lu, 2011, 2011 International Electron Devices Meeting.

GaN-Based Nanowire Transistors

B. Lu, T. Palacios, E. Matioli, 2017 .

GaN power electronics

Daniel Piedra, Bin Lu, Tomas Palacios, 2010, The Eighth International Conference on Advanced Semiconductor Devices and Microsystems.

Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate

Tomas Palacios, Edwin L. Piner, B. Lu, 2010, 68th Device Research Conference.