H. Sohn

发表

Highly Reliable and Scalable Tungsten Polymetal Gate Process for Memory Devices Using Low-Temperature Plasma Selective Gate Reoxidation

Heung-Jae Cho, Sung-Wook Park, N. Kwak, 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

The electronic structure of C60/ZnPc interface for organic photovoltaic device with blended layer architecture

S. W. Cho, Sang Han Park, H. Sohn, 2010 .

Effect of In incorporated into SbTe on phase change characteristics resulting from changes in electronic structure

H. Sohn, M. Cho, D. Ko, 2010 .

Ti-doped alumina based reliable resistive switching in sub-μA regime

M. Yang, H. Sohn, G. Kim, 2020 .

Impact of gate sidewall spacer structures on DRAM cell transistors under Fowler-Nordheim and gate-induced drain leakage stress conditions

Heung-Jae Cho, K. Lim, Yong Soo Kim, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

Flowable oxide CVD Process for Shallow Trench Isolation in Silicon Semiconductor

Sung-Woong Chung, H. Sohn, Sang-Don Lee, 2004 .

Effect of aliovalent impurities on the resistance switching characteristics of sputtered hafnium oxide films

H. Sohn, Youngjae Kim, Kyumin Lee, 2015 .

Highly stable solution-processed ZnO thin film transistors prepared via a simple Al evaporation process

Tae Yoon Kim, H. Sohn, Jin-Pyo Hong, 2014 .

Anisotropic mobility of small molecule-polymer blend channel in organic transistor: Characterization of channel materials and orientation

Ji Hoon Park, H. Sohn, S. Im, 2012 .

Diffusion Barriers Between Al and Cu for the Cu Interconnect of Memory Devices

Ki-Bum Kim, H. Sohn, Soo‐Hyun Kim, 2008 .

A Comparative Study of the Atomic-Layer-Deposited Tungsten Thin Films as Nucleation Layers for W-Plug Deposition

N. Kwak, H. Sohn, Jin-Woong Kim, 2006 .

Characterizations of Pulsed Chemical Vapor Deposited-Tungsten Thin Films for Ultrahigh Aspect Ratio W-Plug Process

H. Sohn, Jin-Woong Kim, Seung-chul Ha, 2005 .

Effects of postnitridation annealing on band gap and band offsets of nitrided Hf-silicate films

H. Sohn, K. Chung, M. Cho, 2008 .

Improvement of the Diffusion Barrier Performance of Ru by Incorporating a WN x Thin Film for Direct-Plateable Cu Interconnects

C. Jeon, H. Sohn, Soo‐Hyun Kim, 2009 .

Adsorptive desulfurization and denitrogenation of refinery fuels using mesoporous silica adsorbents.

H. Sohn, Chang-Ha Lee, J. Moon, 2008, ChemSusChem.

Low Temperature Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and O2

Jae Hyun Kim, Ki-Bum Kim, H. Sohn, 2009 .

Reset First Resistive Switching in Ni1−xO Thin Films as Charge Transfer Insulator Deposited by Reactive RF Magnetron Sputtering

H. Sohn, Dae-woo Kim, Tae-ho Kim, 2022, Nanomaterials.

Strain behaviors of Si1-xGex grown on oxidized and etched Si1-xGex

H. Sohn, B. Min, M. Cho, 2008 .

Ultralow dielectric cross-linked silica aerogel nanocomposite films for interconnect technology

H. Sohn, Hyung‐Ho Park, S. Yoo, 2022, Applied Materials Today.

Role of an Interfacial Layer in Ta2O5‐Based Resistive Switching Devices for Improved Endurance and Reliable Multibit Operation

M. Yang, H. Sohn, G. Kim, 2019, physica status solidi (RRL) – Rapid Research Letters.

Reproducible resistance switching of defect-engineered NiOx with metallic Nb impurity

Jung Ho Yoo, Dae Hong Ko, Hyunchul Sohn, 2011 .

Ovonic threshold switching in polycrystalline zinc telluride thin films deposited by RF sputtering

H. Sohn, Youngjae Kim, Dayoon Lee, 2019, Nanotechnology.

Highly reliable threshold switching behavior of amorphous Ga2Te3 films deposited by RF sputtering

H. Sohn, Dayoon Lee, Tae-ho Kim, 2019, Applied Physics Express.

Effect of interfacial SiO2−y layer and defect in HfO2−x film on flat-band voltage of HfO2−x/SiO2−y stacks for backside-illuminated CMOS image sensors

H. Sohn, Juyoung Jeong, Heedo Na, 2018 .

New Insights into The Transport and Field-Enhancement Effects in Sol-Gel Derived Colossal Magnetoresistive Thin Films

H. Sohn, K. Krishnan, C. Nelson, 1997 .

Effect of fluorine incorporation on silicon dioxide prepared by high density plasma chemical vapor deposition with SiH4∕O2∕NF3 chemistry

Sung-Wook Park, H. Sohn, Jin-Woong Kim, 2004 .

Characteristics of ALD Tungsten Nitride Using B2H6, WF6, and NH3 and Application to Contact Barrier Layer for DRAM

N. Kwak, H. Sohn, Soo‐Hyun Kim, 2007 .

Atomic Layer Deposition of Low-Resistivity and High-Density Tungsten Nitride Thin Films Using B2H6, WF6, and NH3

N. Kwak, H. Sohn, Soo‐Hyun Kim, 2006 .

The Thermal Stability of Heavily Carbon-Doped GaAs Grown by Metalorganic Molecular Beam Epitaxy

S. Nozaki, H. Sohn, M. Konagai, 1992 .

Electron microscopy characterization of GaN films grown by molecular-beam epitaxy on sapphire and SiC

N. Newman, H. Sohn, Z. Liliental-Weber, 1995 .

Characterization of Electrical Properties of Low Temperature GaAs

H. Sohn, Shyh Wang, J. Gamelin, 1991 .

(Bi,La)4Ti3O12 (BLT) thin films grown from nanocrystalline perovskite nuclei for ferroelectric memory devices

J. Roh, S. Yeom, H. Sohn, 2004 .

Nucleation and Defect Structures of GaAs Films Grown on Reactive Ion Etched Si Substrates

H. Sohn, Shyh Wang, J. Tu, 1990 .

A New Approach to Grow Strain-Free GaAs on Si

H. Sohn, Shyh Wang, J. Tu, 1990 .

Growth of Strain-Free GaAs on Si/Sapphire

J. S. Smith, H. Sohn, J. Tu, 1993 .

Relaxation of misfit strain in silicon-germanium (Si1−xGex) films during dry oxidation

H. Sohn, M. Cho, D. Ko, 2010 .

Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film

H. Sohn, B. Min, K. Chung, 2010 .

Defects in GaAs bulk crystals and multi-layers caused by In diffusion

H. Sohn, Z. Liliental-Weber, E. Weber, 1993 .

SUPERCONDUCTIVITY IN INDIUM DIFFUSED GaAs

H. Sohn, E. Weber, P. Werner, 1992 .

The effect of aluminum doping on crystallinity, non-lattice oxygen, and resistance switching of Al-doped HfO2 films deposited by reactive sputtering

H. Sohn, Kyumin Lee, Heedo Na, 2014, Journal of the Korean Physical Society.

Effect of W doping on bipolar resistive switching behavior of TiN/W:NbOx/Pt device

Sunghoon Park, H. Sohn, Kyumin Lee, 2012, 2012 IEEE International Interconnect Technology Conference.

Effect of Zr Addition on Threshold Switching Characteristics of Amorphous Ga2Te3 Thin Films

H. Sohn, Dayoon Lee, Jaeyeon Kim, 2020, physica status solidi (a).

EVIDENCE FOR O2P HOLE-DRIVEN CONDUCTIVITY IN LA1-XSRXMNO3 (0 X 0.7) AND LA0.7SR0.3MNOZ THIN FILMS

H. Sohn, K. Krishnan, H. Ju, 1997 .

A study of surface-coated SiC whiskers on carbon fiber substrates and their properties for diesel particulate filter applications

H. Sohn, D. Choi, Jun Gyu Kim, 2011 .

Role of grain boundaries in double exchange manganite oxides La1-xAxMnO3 (A = Ba, Ca)

H. Sohn, H. Ju, 1997 .

Magnetic inhomogeneity and colossal magnetoresistance in manganese oxides

H. Sohn, H. Ju, 1997 .

Effect of Selective Oxidation Conditions on Defect Generation in Gate Oxide

Heung-Jae Cho, K. Lim, Yong Soo Kim, 2004 .

Characteristics of the nanoscale titanium film deposited by plasma enhanced chemical vapor deposition and comparison of the film properties with the film by physical vapor deposition

N. Kwak, H. Sohn, Jin-Woong Kim, 2006 .

Boron pile-up at the interface between plasma enhanced chemical vapor deposited TiSi2 film and BF2-doped Si

Sung-Woong Chung, H. Sohn, Yoon-Jik Lee, 2003 .

Epitaxial growth of CoSi2 in a decanano contact opening on a (100) silicon substrate

H. Sohn, Jin-Woong Kim, Soo‐Hyun Kim, 2005 .

Thermal stability of Ni–Pt–Ta alloy silicides on epi-Si1−xCx

H. Sohn, M. Cho, D. Ko, 2008 .

Interfacial reaction induced phase separation in LaxHfyO films

H. Sohn, M. Cho, H. J. Cho, 2011 .

Effect of Pt top electrode deposition on the valence state and resistance switching behavior of NbO2-x

H. Sohn, Jaeyeon Kim, Jimin Lee, 2020, Journal of Materials Science: Materials in Electronics.

Chapter 9 Structural Defects in Epitaxial III/V Layers

H. Sohn, Z. Liliental-Weber, J. Washburn, 1993 .

ISOTHERMAL M2C CARBIDE GROWTH IN ULTRAHIGH STRENGTH HIGH Co-Ni STEELS

Hyuck-Mo Lee, H. Sohn, C. Yoo, 1997 .

Effect of oxygen diffusion into TiN on resistance switching characteristics of ZrO2 films with annealing temperatures

H. Sohn, Kyumin Lee, Heedo Na, 2011, 2011 IEEE International Interconnect Technology Conference.

Effects of High-Temperature Metal-Organic Chemical Vapor Deposition of Pb(Zr,Ti)O3 Thin Films on Structural Stabilities of Hybrid Pt/IrO2/Ir Stack and Single-Layer Ir Bottom Electrodes

J. Roh, S. Yeom, H. Sohn, 2004 .

Pulsed CVD of Tungsten Thin Film as a Nucleation Layer for Tungsten Plug-Fill

H. Sohn, Jin-Woong Kim, Soo‐Hyun Kim, 2004 .

Effect of crystallinity on the resistive switching behavior of HfAlOx films

Hyoungsub Kim, H. Sohn, Youngjae Kim, 2014 .

Effect of Process Parameters on the Angular Distribution of Sputtered Cu Flux in Long-Throw Sputtering System

H. Sohn, Jun Woo Park, H. Shin, 2019, Korean Journal of Metals and Materials.

Effect of thermal annealing sequence on the crystal phase of HfO2 and charge trap property of Al2O3/HfO2/SiO2 stacks

H. Sohn, Juyoung Jeong, Heedo Na, 2017 .

A novel method for forming gate spacer and its effects on the W/WN/sub x//poly-Si gate stack

Heung-Jae Cho, K. Lim, Yong Soo Kim, 2004, Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850).

Crystallinity of silicon films grown on carbon fibers by very high frequency plasma enhanced chemical vapor deposition

H. Sohn, D. Ko, Kyumin Lee, 2015 .

Changes in thermal conductivity and bandgap of SiC single crystals in accordance with thermal stress

H. Sohn, D. Choi, Jun Gyu Kim, 2012 .

Positive effects of a Schottky-type diode on unidirectional resistive switching devices

M. Yang, H. Sohn, G. Kim, 2019 .

RESET-first unipolar resistance switching behavior in annealed Nb2O5 films

H. Sohn, R. Sinclair, D. Ko, 2014 .

RESET-first bipolar resistive switching due to redox reaction in ALD HfO2 films

H. Sohn, D. Ko, Youngjae Kim, 2013 .

Effect of chemical bonding states in TaOx base layers on rectifying bipolar resistive switching characteristics

H. Sohn, D. Ko, Youngjae Kim, 2013 .

Negative Differential Resistance Characteristics in Forming‐Free NbOx with Crystalline NbO2 Phase

H. Sohn, Jaeyeon Kim, Jimin Lee, 2021, physica status solidi (RRL) – Rapid Research Letters.

Phase change behavior in oxygen-incorporated Ge2Sb2Te5 films

H. Sohn, M. Cho, D. Ko, 2009 .

Effect of Deposition Temperature and Niobium Doping on Resistive Switching Properties of the Polycrystalline NiO x Films

H. Sohn, Kyumin Lee, Jonggi Kim, 2009 .

Development of New TiN/ZrO2/Al2O3/ZrO2/TiN Capacitors Extendable to 45nm Generation DRAMs Replacing HfO2 Based Dielectrics

Noh-Jung Kwak, Han-Sang Song, Ki-Seon Park, 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

Effects of Ag doping on the crystallization properties of Sb-rich GeSb thin films

J. Roh, H. Sohn, N. Kim, 2011 .

Crystallographic Orientation Dependent Ferroelectric Characteristics of (Bi3.3,La0.8)Ti3O12 (BLT) Capacitors

J. Roh, S. Yeom, H. Sohn, 2005 .

GA VACANCIES IN LOW-TEMPERATURE-GROWN GAAS IDENTIFIED BY SLOW POSITRONS

Eicke R. Weber, S. Eichler, Hyunchul Sohn, 1997 .

Threshold Switching of Ag-Ga2Te3 Selector with High Endurance for Applications to Cross-Point Arrays

H. Sohn, Jaeyeon Kim, Jimin Lee, 2021, Nanoscale Research Letters.

Effect of composition in Si1−xGex seed layer on the solid phase crystallization of ultrathin amorphous silicon layer

H. Sohn, S. Baek, Yongwoo Jang, 2017 .

A bilayer diffusion barrier of ALD-Ru/ALD-TaCN for direct plating of Cu

Hyun Tae Kim, H. Sohn, Soo‐Hyun Kim, 2008 .

High current fast switching n-ZnO/p-Si diode

H. Sohn, Kwang-H Lee, S. Im, 2010 .

Effect of SiO2 tunnel layer processes on the characteristics of MONOS charge trap devices with poly-Si channels

H. Sohn, M. Cho, Jinho Oh, 2013 .

Performance improvement of metal-Al2O3-HfO2-oxide-silicon memory devices with band-engineered Hf-aluminate/SiO2 tunnel barriers

H. Sohn, Jinho Oh, Kyumin Lee, 2013 .

Effects of phase of underlying W film on chemical vapor deposited-W film growth and applications to contact-plug and bit line processes for memory devices

Tae-Sik Yoon, Noh-Jung Kwak, Hyunchul Sohn, 2007 .

High-mobility property of crystallized In-Te chalcogenide materials

H. Sohn, M. Cho, Seungjong Park, 2012, Electronic Materials Letters.

Change in the interfacial reaction of Hf-silicate film as a function of thickness and stoichiometry.

H. Sohn, K. Chung, C. Yim, 2008, The Journal of chemical physics.

Analogue Artificial Synaptic Performance of Self‐Rectifying Resistive Switching Device

M. Yang, H. Sohn, Jin Joo Ryu, 2023, Advanced Electronic Materials.

Effect of Nitrogen Doping on Threshold Voltage in Amorphous Ga2Te3 for Application of Selector Devices

H. Sohn, Dayoon Lee, Jaeyeon Kim, 2020, physica status solidi (a).

Novel shallow trench isolation process using flowable oxide CVD for sub-100 nm DRAM

Sung-Woong Chung, H. Sohn, Sungki Park, 2002, Digest. International Electron Devices Meeting,.

Crystallization Behaviors of Laser Induced Ge2Sb2Te5 in Different Amorphous States

H. Sohn, M. Cho, D. Ko, 2010 .

Highly Scalable Saddle-Fin (S-Fin) Transistor for Sub-50nm DRAM Technology

Kwang-Ok Kim, Seung-Chan Moon, Jin-Soo Kim, 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

Effect of Doped Nitrogen on the Crystallization Behaviors of Ge2Sb2Te5

H. Sohn, D. Ko, Hyun-Jin Chang, 2010 .

Investigation of phase transition of Ge2Sb2Te5 and N-incorporated Ge2Sb2Te5 films using x-ray absorption spectroscopy

Min Gyu Kim, Y. K. Kim, H. Sohn, 2008 .

Locally formed conductive filaments in an amorphous Ga2Te3 ovonic threshold switching device

H. Sohn, Wansun Kim, Jusung Kim, 2023, AIP Advances.