D. Ioannou

发表

22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL

S. Narasimha, K. Onishi, J. Johnson, 2012, 2012 International Electron Devices Meeting.

A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

S. Narasimha, M. Hargrove, R. Pal, 2011, 2011 International Electron Devices Meeting.

High performance 32nm SOI CMOS with high-k/metal gate and 0.149µm2 SRAM and ultra low-k back end with eleven levels of copper

M. Belyansky, L. Black, J. Holt, 2006, 2009 Symposium on VLSI Technology.

Bias temperature instability in High-κ/metal gate transistors - Gate stack scaling trends

E. Cartier, V. Narayanan, J. Stathis, 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

A Thin-Film SOI 180nm CMOS RF Switch Technology

Alvin J. Joseph, James S. Dunn, Dimitris P. Ioannou, 2009 .

Influence of charge trapping on failure detection and its distributions for nFET high-κ stacks

E. Wu, D. Ioannou, C. LaRow, 2011, 2011 International Electron Devices Meeting.

Effect of hot carrier stress on device junctions measured by electron holography and scanning capacitance microscopy

R. Krishnasamy, J. Bruley, D. Ioannou, 2018, Applied Physics Letters.

Positive Bias Temperature Instability Effects in nMOSFETs With $\hbox{HfO}_{2}/\hbox{TiN}$ Gate Stacks

S. Mittl, D. Ioannou, S. Mittl, 2009, IEEE Transactions on Device and Materials Reliability.

Effect of plasma N2 and thermal NH3 nitridation in HfO2 for ultrathin equivalent oxide thickness

J. Shepard, V. Narayanan, S. Krishnan, 2013 .

Hot carrier effects on the RF performance degradation of nanoscale LNA SOI nFETs

Dimitris P. Ioannou, Y. Tan, R. Logan, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

HKMG CMOS technology qualification: The PBTI reliability challenge

Dimitris P. Ioannou, D. Ioannou, 2014, Microelectron. Reliab..

Positive Bias Temperature Instability Effects in nMOSFETs With HfO 2 /TiN Gate Stacks

Dimitris P. Ioannou, D. Ioannou, S. Mittl, 2009 .