Y. Morita

Local $V_{\rm th}$ Variability and Scalability in Silicon-on-Thin-BOX (SOTB) CMOS With Small Random-Dopant Fluctuation

N. Sugii, R. Tsuchiya, T. Ishigaki, 2010, IEEE Transactions on Electron Devices.

Silicon on thin BOX (SOTB) CMOS for ultralow standby power with forward-biasing performance booster

T. Iwamatsu, T. Hiramoto, R. Tsuchiya, 2008, ESSDERC 2008 - 38th European Solid-State Device Research Conference.

Effects of Device Structure and Back Biasing on HCI and NBTI in Silicon-on-Thin-BOX (SOTB) CMOSFET

N. Sugii, R. Tsuchiya, T. Ishigaki, 2011, IEEE Transactions on Electron Devices.

Wide-Range Threshold Voltage Controllable Silicon on Thin Buried Oxide Integrated with Bulk Complementary Metal Oxide Semiconductor Featuring Fully Silicided NiSi Gate Electrode

Nobuyuki Sugii, Toshiro Hiramoto, Toshiaki Iwamatsu, 2008 .

Low voltage (Vdd∼0.6 V) SRAM operation achieved by reduced threshold voltage variability in SOTB (silicon on thin BOX)

R. Tsuchiya, T. Ishigaki, N. Sugii, 2006, 2009 Symposium on VLSI Technology.

HCI and NBTI including the effect of back-biasing in thin-BOX FD-SOI CMOSFETs

N. Sugii, R. Tsuchiya, T. Ishigaki, 2010, 2010 IEEE International Reliability Physics Symposium.

The fabrication and characterization of large scale integrated field emitter arrays for high current electron sources

Y. Takegawa, Y. Morita, T. Ide, 1995, Proceedings of International Electron Devices Meeting.

Ultralow-power LSI Technology with Silicon on Thin Buried Oxide (SOTB) CMOSFET

Nobuyuki Sugii, Ryuta Tsuchiya, Takashi Ishigaki, 2010 .

Comprehensive study on vth variability in silicon on Thin BOX (SOTB) CMOS with small random-dopant fluctuation: Finding a way to further reduce variation

R. Tsuchiya, T. Ishigaki, N. Sugii, 2008, 2008 IEEE International Electron Devices Meeting.