D. Lichtenwalner

发表

Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV

S. Ryu, J. Richmond, J. Palmour, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Flexible thin film temperature and strain sensor array utilizing a novel sensing concept

A. Kingon, D. Lichtenwalner, A. E. Hydrick, 2007 .

900V silicon carbide MOSFETs for breakthrough power supply design

A. Barkley, J. Casady, S. Ryu, 2015, 2015 IEEE Energy Conversion Congress and Exposition (ECCE).

New Generation 10kV SiC Power MOSFET and Diodes for Industrial Applications

J. Casady, B. Hull, J. Richmond, 2015 .

Contact degradation in hot/cold operation of direct contact micro-switches

A. Kingon, A. Morris, J. Krim, 2010 .

Comparison of Au and Au–Ni Alloys as Contact Materials for MEMS Switches

A. Kingon, A. Morris, J. Krim, 2009, Journal of Microelectromechanical Systems.

Lanthanide-Based High-k Gate Dielectric Materials

D. Lichtenwalner, 2013 .

Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates

V. Misra, D. Lichtenwalner, R. Suri, 2010 .

Overview of Materials Processing and Properties of Lanthanum-Based High-k Dielectrics

Daniel J. Lichtenwalner, Jesse S. Jur, Angus I. Kingon, 2007 .

Effect of GaAs Surface Treatments on Lanthanum Silicate High-K Dielectric Gate Stack Properties

V. Misra, D. Lichtenwalner, R. Suri, 2008 .

Physical Vapor Deposition of Multicomponent Oxide Thin Films: Techniques, Basic Deposition Processes and Film Processing-Microstructure-Property Relationships

A. Kingon, D. Lichtenwalner, A. Krauss, 1993 .

Gate Stack Reliability of High-Mobility 4 H SiC Lateral MOSFETs with Deposited Al 2 O 3 Gate Dielectric

S. Dhar, A. Agarwal, S. Ryu, 2009 .

High-mobility enhancement-mode 4H SiC lateral nMOSFETs with atomic layer deposited Al2O3 gate dielectric

S. Dhar, A. Agarwal, S. Ryu, 2009, 2009 International Semiconductor Device Research Symposium.

Impact of AlTaO Dielectric Capping on Device Performance and Reliability for Advanced Metal Gate/High-$k$ PMOS Application

V. Misra, Bongmook Lee, D. Lichtenwalner, 2011, IEEE Transactions on Electron Devices.

Processing Impact on Electrical Properties of Lanthanum Silicate Thin Films

A. Kingon, J. Jur, D. Lichtenwalner, 2006 .

Lead zirconate titanate ferroelectric capacitors produced on sapphire and gallium arsenide substrates

A. Kingon, D. Lichtenwalner, O. Auciello, 1995 .

Reliability assessment of a large population of 3.3 kV, 45 A 4H-SIC MOSFETs

B. Hull, J. Palmour, E. van Brunt, 2017, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).

Gate Bias Effects on SiC MOSFET Terrestrial-Neutron Single-Event Burnout

S. Ryu, B. Hull, J. Palmour, 2022, Materials Science Forum.

Resolution of the transfer direction of field-evaporated gold atoms for nanofabrication and microelectromechanical system applications

A. Kingon, J. Krim, D. Lichtenwalner, 2011 .

Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs

S. Ryu, B. Hull, J. Palmour, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS).

Gate leakage effects of annealing Lanthanum Oxide on Gallium Nitride

D. Lichtenwalner, D. Barlage, V. Wheeler, 2009, 2009 International Semiconductor Device Research Symposium.

High temperature stability of Hf-based gate dielectric stacks with rare-earth oxide layers for threshold voltage control

Dmitri O. Klenov, A. Kingon, J. Maria, 2008 .

Interface and Electrical Properties of Atomic-layer-deposited HfAlO Gate Dielectric for N-channel GaAs MOSFETs

V. Misra, D. Lichtenwalner, R. Suri, 2009 .

Impact of elemental arsenic on electrical characteristics of metal-oxide-semiconductor capacitors on GaAs using atomic-layer deposited HfO2 gate dielectric

V. Misra, D. Lichtenwalner, R. Suri, 2008 .

Epitaxial Growth of High-κ Dielectrics for GaN MOSFETs

J. Jur, D. Lichtenwalner, D. Barlage, 2008 .

Epitaxial Rare Earth Oxide Growth on GaN for Enhancement-mode MOSFETs

J. Jur, D. Lichtenwalner, D. Barlage, 2008 .

GROWTH AND CHARACTERIZATION OF CUBIC BORON NITRIDE THIN FILMS

D. Lichtenwalner, R. Davis, D. Kester, 1994 .

Ultra high voltage MOS controlled 4H-SiC power switching devices

C. W. Tipton, J. Casady, S. Ryu, 2015 .

Effects of process parameters on the ablated flux characteristics during pulsed-laser ablation of lead zirconate titanate (PZT&)

A. Kingon, D. Lichtenwalner, O. Auciello, 1993 .

Structure and chemistry of passivated SiC/SiO2 interfaces

B. Hull, J. Palmour, D. Lichtenwalner, 2016 .

Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices

B. Hull, J. Palmour, E. van Brunt, 2018, Materials Science Forum.

High performance, large-area, 1600 V / 150 A, 4H-SiC DMOSFET for robust high-power and high-temperature applications

A. Agarwal, S. Ryu, J. Richmond, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

A Review of Orientation-Microstructure-Property Relationships for PZT / Metal or Metal-Oxide Layered Heterostructures

A. Kingon, D. Lichtenwalner, O. Auciello, 1994 .

Epitaxial KNbO3 thin films on KTaO3, MgAl2O4, and MgO substrates

A. Kingon, D. Lichtenwalner, O. Auciello, 1994 .

Pulsed laser ablation-deposition of La_0.5Sr_0.5CoO_3 for use as electrodes in nonvolatile ferroelectric memories

Daniel J. Lichtenwalner, Angus I. Kingon, O. Auciello, 1996 .

Investigation of the Origin of $V_{T}/V_{\rm FB}$ Modulation by $\hbox{La}_{2}\hbox{O}_{3}$ Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High- $k$ Layer, and Interface Properties

V. Misra, Bongmook Lee, D. Lichtenwalner, 2011, IEEE Transactions on Electron Devices.

Plasma-Activated Ion Beam Reactive Sputtering of NbN Thin Films *

D. Lichtenwalner, D. Rudman, A. Anderson, 1988 .

Synthesis and characterization of epitaxial YBa2Cu3O7−δ/KNbO3 thin‐film heterostructures

A. Kingon, D. Lichtenwalner, R. R. Woolcott, 1992 .

Scanning Tunneling Microscopy and Spectroscopy of Y-Ba-Cu-O Thin Films Produced by Ion Beam Sputter-Deposition

A. Kingon, D. Lichtenwalner, L. M. Chen, 1992 .

In situ deposition of superconducting YBa2Cu3O7−x and DyBa2Cu3O7−x thin films by organometallic molecular‐beam epitaxy

A. Kingon, D. Lichtenwalner, K. Hsieh, 1991 .

Uniform deposition of YBa2Cu3O7−δ films over large areas using ion‐beam sputtering

A. Kingon, D. Lichtenwalner, O. Auciello, 1991 .

Process control for the low temperature deposition of niobium-nitride thin films

W. T. Brogan, D. Lichtenwalner, A. Anderson, 1989 .

Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H–SiC

Veena Misra, Daniel J. Lichtenwalner, Casey Kirkpatrick, 2010 .

Polycrystalline La0.5Sr0.5CoO3/PbZr0.53Ti0.47O3/ La0.5Sr0.5CoO3 ferroelectric capacitors on platinized silicon with no polarization fatigue

Orlando Auciello, Daniel J. Lichtenwalner, Angus I. Kingon, 1994 .

Effect of electrodes on the ferroelectric properties of pulsed-laser ablation-deposited PbZrXTi1-xO3 thin film capacitors

A. Kingon, D. Lichtenwalner, O. Auciello, 1994 .

Epitaxial growth of lanthanide oxides La2O3 and Sc2O3 on GaN

J. Maria, J. Jur, D. Lichtenwalner, 2011 .

High-Temperature Stability of Lanthanum Silicate Gate Dielectric MIS Devices with Ta and TaN Electrodes

A. Kingon, V. Misra, J. Jur, 2006 .

Investigation of the ablated flux characteristics during pulsed laser ablation deposition of multicomponent oxides

Orlando Auciello, Daniel J. Lichtenwalner, Angus I. Kingon, 1993 .

Light emission from thermally oxidized silicon nanoparticles

John M. Zavada, Daniel J. Lichtenwalner, R. M. Kolbas, 1994 .

Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout

Scott Allen, Akin Akturk, John W. Palmour, 2018, Materials Science Forum.

Predicting Cosmic Ray-Induced Failures in Silicon Carbide Power Devices

D. Grider, N. Goldsman, R. Wilkins, 2019, IEEE Transactions on Nuclear Science.

Terrestrial Neutron-Induced Failures in Silicon Carbide Power MOSFETs and Diodes

B. Hull, N. Goldsman, D. Grider, 2018, IEEE Transactions on Nuclear Science.

Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

A. L. Sternberg, A. F. Witulski, R. D. Schrimpf, 2018, IEEE Transactions on Nuclear Science.

Accelerated Testing of SiC Power Devices under High-Field Operating Conditions

S. Ryu, B. Hull, J. Richmond, 2020 .

A review of composition-structure-property relationships for PZT-based heterostructure capacitors

D. Lichtenwalner, O. Auciello, H. Alshareef, 1995 .

Origin of multiplexing capabilities of multifrequency magnetic ratchets.

D. Lichtenwalner, B. Yellen, Mukarram A Tahir, 2012, Physical review. E, Statistical, nonlinear, and soft matter physics.

Ion-Beam Reactive Sputter Deposition of MgO Thin Films on Silicon and Sapphire Substrates

A. Kingon, D. Lichtenwalner, O. Auciello, 1992 .

Microstructural Characterization of Epitaxial Bottom Electrodes, Buffered Layers, and Ferroelectric thin Films

A. Kingon, D. Lichtenwalner, O. Auciello, 1991 .

The ion-beam reactive sputtering process for deposition of niobium nitride thin films

D. Lichtenwalner, 1990 .

High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric

Anant K. Agarwal, Veena Misra, Sei-Hyung Ryu, 2009 .

Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw Dislocations

J. McPherson, E. Brunt, D. Lichtenwalner, 2023, 2023 IEEE International Reliability Physics Symposium (IRPS).

High temperature stability of lanthanum silicate dielectric on Si (001)

Daniel J. Lichtenwalner, Jesse S. Jur, Angus I. Kingon, 2007 .

Outlook for Dielectric/SiC Interfaces for Future Generation MOSFETs

S. Ryu, B. Hull, J. Palmour, 2023, Materials Science Forum.

Investigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETs

A. Agarwal, V. Misra, D. Lichtenwalner, 2013 .

SiC power device reliability

Gangyao Wang, Sei-Hyung Ryu, John W. Palmour, 2016, 2016 IEEE International Integrated Reliability Workshop (IIRW).

High-Mobility SiC MOSFETs with Alkaline Earth Interface Passivation

Scott Allen, John W. Palmour, Daniel J. Lichtenwalner, 2016 .

High-Mobility SiC MOSFETs with Chemically Modified Interfaces

Scott Allen, Lin Cheng, Anant K. Agarwal, 2015 .

High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers

S. Dhar, A. Agarwal, J. Palmour, 2014 .

Band-Engineered Low PMOS VT with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme

Hsing-Huang Tseng, Byoung Hun Lee, R. Jammy, 2007, 2007 IEEE Symposium on VLSI Technology.

Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric

V. Misra, Bongmook Lee, D. Lichtenwalner, 2008 .

Effect of noble gases on the properties of ion beam sputtered niobium films

D. Lichtenwalner, D. Rudman, A. Anderson, 1989 .

Growth of Epitaxial KNbO 3 Thin Films

A. Kingon, P. Morris, D. Lichtenwalner, 1994 .

Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction

A. Kingon, J. Jur, S. Stemmer, 2005 .

Aggressively Scaled High-k Gate Dielectric with Excellent Performance and High Temperature Stability for 32nm and Beyond

D. Gilmer, G. Bersuker, P. Kirsch, 2007, 2007 IEEE International Electron Devices Meeting.

Comparison of channel mobility and oxide properties of MOSFET devices on Si-face (0001) and A-face (11-20) 4H-SiC

J. Palmour, D. Lichtenwalner, C. Scozzie, 2014 .

Analysis of Interface States in LaSixOy Metal–Insulator–Semiconductor Structures

A. Kingon, J. Jur, D. Lichtenwalner, 2007 .

Reliability studies of SiC vertical power MOSFETs

Scott Allen, Akin Akturk, John W. Palmour, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Gate Oxide Reliability of SiC MOSFETs and Capacitors Fabricated on 150mm Wafers

B. Hull, J. Palmour, E. van Brunt, 2019, Materials Science Forum.

The effects of radiation on the terrestrial operation of SiC MOSFETs

Neil Goldsman, Richard Wilkins, Akin Akturk, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETs

Robert A. Johnson, peixiong zhao, R. Reed, 2020 .

High Temperature and High Humidity Reliability Evaluation of Large-Area 1200V and 1700V SiC Diodes

B. Hull, J. Palmour, E. Brunt, 2023, 2023 IEEE International Reliability Physics Symposium (IRPS).

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

Husam N. Alshareef, Muhammad Mustafa Hussain, Gennadi Bersuker, 2008 .

Band Edge n-MOSFETs with High-k/Metal Gate Stacks Scaled to EOT=0.9nm with Excellent Carrier Mobility and High Temperature Stability

G. Bersuker, P. Kirsch, A. Kingon, 2006, 2006 International Electron Devices Meeting.

Thermally Stable N-Metal Gate MOSFETs Using La-Incorporated HfSiO Dielectric

R. Jammy, B.H. Lee, P. Majhi, 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

Work function engineering using lanthanum oxide interfacial layers

Husam N. Alshareef, Byoung Hun Lee, Raj Jammy, 2006 .

Blocking Performance Improvements for 4H-SiC P-GTO Thyristors with Carrier Lifetime Enhancement Processes

J. Casady, S. Ryu, B. Hull, 2018, Materials Science Forum.

Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor

J. Casady, S. Ryu, B. Hull, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Temperature dependence of avalanche breakdown in 4H-SiC devices

B. Hull, E. van Brunt, D. Lichtenwalner, 2023, Journal of Applied Physics.

15 kV n-GTOs in 4H-SiC

J. Casady, S. Ryu, B. Hull, 2019, Materials Science Forum.

Electrically detected magnetic resonance study of barium and nitric oxide treatments of 4H-SiC metal-oxide-semiconductor field-effect transistors

J. P. Ashton, D. Lichtenwalner, A. Lelis, 2019, Journal of Applied Physics.

Second harmonic generation in potassium niobate thin films

V. E. Wood, A. Kingon, D. Lichtenwalner, 1995 .

Study of the surface morphology and growth mode of insitu ion‐beam sputter‐deposited YBa2Cu3O7−δ thin films

A. Kingon, D. Lichtenwalner, O. Auciello, 1992 .

Performance and Reliability of SiC Power MOSFETs

Sei-Hyung Ryu, John W. Palmour, Daniel J. Lichtenwalner, 2016 .