A. Burk

发表

Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV

S. Ryu, J. Richmond, J. Palmour, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Recent progress in SiC DMOSFETs and JBS diodes at Cree

Sei-Hyung Ryu, Qingchun Zhang, B. Hull, 2008, 2008 34th Annual Conference of IEEE Industrial Electronics.

New generation 6.5 kV SiC power MOSFET

Scott Allen, Edward Van Brunt, Brett Hull, 2017, 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

22 kV, 1 cm2, 4H-SiC n-IGBTs with improved conductivity modulation

S. Ryu, J. Richmond, J. Palmour, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

9 kV, 1 cm×1 cm SiC super gto technology development for pulse power

J. Richmond, R. Callanan, J. Palmour, 2009, 2009 IEEE Pulsed Power Conference.

Ultra high voltage (>12 kV), high performance 4H-SiC IGBTs

A. Agarwal, S. Ryu, A. Hefner, 2012, International Symposium on Power Semiconductor Devices and IC's.

Prospects of bipolar power devices in silicon carbide

S. Mazumder, R. Callanan, Qingchun Zhang, 2008, 2008 34th Annual Conference of IEEE Industrial Electronics.

Reliability and stability of SiC power mosfets and next-generation SiC MOSFETs

J. Casady, S. Ryu, B. Hull, 2014, 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications.

High performance, ultra high voltage 4H-SiC IGBTs

A. Agarwal, S. Ryu, A. Hefner, 2012, 2012 IEEE Energy Conversion Congress and Exposition (ECCE).

Development of 15 kV 4H-SiC IGBTs

Lin Cheng, Anant K. Agarwal, John W. Palmour, 2012 .

10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems

David Grider, Lin Cheng, John W. Palmour, 2014, 2014 IEEE Energy Conversion Congress and Exposition (ECCE).

SiC electronics

S. Sriram, A.W. Morse, P.M. Esker, 1996, International Electron Devices Meeting. Technical Digest.

SiC Epitaxial Layer Growth in a Novel Multi-Wafer VPE Reactor

M. O'loughlin, A. Burk, S. Mani, 1997 .

A critical look at the performance advantages and limitations of 4H-SiC power UMOSFET structures

A. Agarwal, M. White, A. Burk, 1996, 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.

Large diameter 6H-SiC for microwave device applications

R. C. Clarke, W. J. Choyke, A. Burk, 1994 .

15 kV IGBTs in 4H-SiC

A. Agarwal, S. Ryu, J. Richmond, 2013 .

Industrial Perspective of SiC Epitaxy

A. Burk, M. O'Loughlin, Denis Tsvetkov, 2021, Wide Bandgap Semiconductors for Power Electronics.

Development of Multiwafer Warm‐Wall Planetary VPE Reactors for SiC Device Production

A. Burk, 2006 .

SiC epitaxial layer growth in a novel multi-wafer vapor-phase epitaxial (VPE) reactor

M. O'loughlin, A. Burk, H. Nordby, 1999 .

Reliability assessment of a large population of 3.3 kV, 45 A 4H-SIC MOSFETs

B. Hull, J. Palmour, E. van Brunt, 2017, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).

Photoluminescent properties of n‐GaAs electrodes: Simultaneous determination of depletion widths and surface hole‐capture velocities in photoelectrochemical cells

W. S. Hobson, A. Burk, A. Ellis, 1986 .

Reduction of unintentional aluminum spikes at SiC vapor phase epitaxial layer/substrate interfaces

A. Burk, L. Rowland, 1996 .

High power silicon carbide IMPATT diode development

G. Bilbro, R. Trew, A. Burk, 1993 .

High power operation of 4H-SiC MESFETs at 10 GHz

A. Burk, L. Rowland, H. M. Hobgood, 1997, 1997 55th Annual Device Research Conference Digest.

Performance and Reliability of AlGaN / GaN HEMT on 100mm SiC Substrate With Improved Epitaxial Growth Uniformity

J. Palmour, A. Burk, S. Sheppard, 2012 .

Basal Plane Dislocations Created in 4H-SiC Epitaxy by Implantation and Activation Anneal

B. Hull, A. Burk, R. Stahlbush, 2015 .

Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices

B. Hull, J. Palmour, E. van Brunt, 2018, Materials Science Forum.

SiC super GTO thyristor technology development: Present status and future perspective

Heather O'Brien, Aderinto Ogunniyi, C. Capell, 2011, 2011 IEEE Pulsed Power Conference.

Advanced silicon carbide gate turn-off thyristor for energy conversion and power grid applications

H. O'Brien, C. Scozzie, C. Capell, 2012, 2012 IEEE Energy Conversion Congress and Exposition (ECCE).

Improvement of Minority Carrier Lifetime in Thick 4H-SiC Epi-layers by Multiple Thermal Oxidations and Anneals

A. Agarwal, J. Palmour, M. O'loughlin, 2013 .

4H-SiC Bipolar Junction Transistors with a Current Gain of 108

A. Agarwal, R. Callanan, J. Palmour, 2008 .

Bulk Growth of Large Area SiC Crystals

J. Sumakeris, M. Paisley, A. Powell, 2016 .

Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices

J. Palmour, M. O'loughlin, A. Burk, 2016 .

SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor

J. Palmour, M. O'loughlin, A. Burk, 2012 .

Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings

Alex Q. Huang, David E. Grider, Lin Cheng, 2014 .

15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors

Lin Cheng, Anant K. Agarwal, John W. Palmour, 2013 .

16 kV, 1 cm2, 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications

A. Agarwal, J. Richmond, J. Palmour, 2013 .

Advances in SiC materials and devices : an industrial point of view

S. Sriram, Anant K. Agarwal, R. R. Siergiej, 1999 .

Wavelength control of iron/nickel composition in laser induced chemical vapor deposited films

A. Burk, J. Coey, J. V. Armstrong, 1987 .

Homoepitaxial VPE growth of SiC active layers

A. Burk, L. Rowland, A. A. Burk, 1997 .

Development of 1200 V, 3.7 mΩ-cm2 4H-SiC DMOSFETs for Advanced Power Applications

Lin Cheng, Anant K. Agarwal, Aivars J. Lelis, 2012 .

Large Diameter 4H-SiC Substrates for Commercial Power Applications

J. Sumakeris, A. Powell, A. Burk, 2004 .

Extended defects that affect carrier lifetime in high blocking voltage SiC epilayers

M. O'loughlin, A. Burk, R. Stahlbush, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

The role of excess silicon and in situ etching on 4HSiC and 6HSiC epitaxial layer morphology

A. Burk, L. Rowland, 1996 .

Physical phenomena affecting performance and reliability of 4H-SiC bipolar junction transistors

Anant Agarwal, Robert M. Kennedy, Tangali S. Sudarshan, 2009, Microelectron. Reliab..

Photoluminescent and Electroluminescent Properties of Cd0.95Mn0.05Se Electrodes

A. Burk, A. Ellis, A. Wold, 1984, International Conference on Luminescence - 1984.

20 kV, 2 cm2, 4H-SiC gate turn-off thyristors for advanced pulsed power applications

Lin Cheng, Anant K. Agarwal, Edward Van Brunt, 2013, 2013 Abstracts IEEE International Conference on Plasma Science (ICOPS).

SiC and GaN wide bandgap semiconductor materials and devices

S. Sriram, Anant K. Agarwal, R. C. Clarke, 1999 .

A Comparison of the Microwave Photoconductivity Decay and Open-Circuit Voltage Decay Lifetime Measurement Techniques for Lifetime-Enhanced 4H-SiC Epilayers

A. Agarwal, J. Palmour, M. O'loughlin, 2014, Journal of Electronic Materials.

Status of SiC power devices at Northrop Grumman

A. Agarwal, J. Casady, A. Burk, 1999 .

Application of an Electrochemical Arsine Generator on High Throughput MOVPE Reactor

A. Burk, 1992, Sixth International Conference Metalorganic Vapor Phase Epitaxy.

High power 4H-SiC static induction transistors

P. A. Orphanos, R. R. Siergiej, C. D. Brandt, 1995, Proceedings of International Electron Devices Meeting.

4H-SiC MESFET's with 42 GHz f/sub max/

S. Sriram, P. A. Orphanos, T.J. Smith, 1996, IEEE Electron Device Letters.

Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspective

Adrian Powell, C. H. Carter, J. Sumakeris, 2006 .

Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC

A. Burk, L. Rowland, C. Brandt, 1997 .

SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices

A. Agarwal, B. Hull, J. Sumakeris, 2008 .

Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6×150 mm Warm-Wall Planetary Reactor

A. Powell, M. O'loughlin, A. Burk, 2014 .

SiC Warm-Wall Planetary VPE Growth on Multiple 100-mm Diameter Wafers

M. Paisley, A. Powell, M. O'loughlin, 2006 .

Large Area SiC Epitaxial Layer Growth in a Warm-Wall Planetary VPE Reactor

M. Paisley, A. Powell, M. O'loughlin, 2005 .

Multi-Wafer VPE Growth of Highly Uniform SiC Epitaxial Layers

M. O'loughlin, A. Burk, H. Nordby, 1999 .

Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers

M. O'loughlin, A. Burk, R. Stahlbush, 2012 .

Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes

A. Agarwal, J. Palmour, M. O'loughlin, 2010 .

The Impact of Pregrowth Conditions and Substrate Polytype on SiC Epitaxial Layer Morphology

A. Burk, L. Rowland, R. Hopkins, 1996 .

4H–SiC BJTs with current gain of 110

Anant K. Agarwal, Charles Scozzie, Qingchun Zhang, 2008 .

1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70

Anant K. Agarwal, Robert Callanan, Charles Scozzie, 2008 .

Next-Generation Planar SiC MOSFETs from 900 V to 15 kV

S. Ryu, B. Hull, J. Richmond, 2015 .

Critical Materials, Device Design, Performance and Reliability Issues in 4H-SiC Power Umosfet Structures

A. Agarwal, M. White, A. Burk, 1996 .

Blocking Performance Improvements for 4H-SiC P-GTO Thyristors with Carrier Lifetime Enhancement Processes

J. Casady, S. Ryu, B. Hull, 2018, Materials Science Forum.

Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor

J. Casady, S. Ryu, B. Hull, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

12 kV, 1 cm2 SiC GTO Thyristors with Negative Bevel Termination

Lin Cheng, Anant K. Agarwal, Michael E. Levinshtein, 2012 .

20 kV 4H-SiC N-IGBTs

Subhashish Bhattacharya, Arun Kadavelugu, John W. Palmour, 2014 .

High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs

A. Agarwal, S. Ryu, J. Richmond, 2012 .

15 kV n-GTOs in 4H-SiC

J. Casady, S. Ryu, B. Hull, 2019, Materials Science Forum.

RF performance of SiC MESFET's on high resistivity substrates

S. Sriram, P. A. Orphanos, T.J. Smith, 1994, IEEE Electron Device Letters.

Advances in silicon carbide (SiC) device processing and substrate fabrication for high power microwave and high temperature electronics

A. Burk, R. Siergiej, R. Hopkins, 1993, 15th Annual GaAs IC Symposium.