C. Scozzie

发表

Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV

S. Ryu, J. Richmond, J. Palmour, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Investigation of the Suitability of 1200-V Normally-Off Recessed-Implanted-Gate SiC VJFETs for Efficient Power-Switching Applications

T. McNutt, R. Howell, C. Scozzie, 2009, IEEE Electron Device Letters.

Physics-based numerical modeling and characterization of 6H-silicon-carbide metal–oxide–semiconductor field-effect transistors

N. Goldsman, C. Scozzie, A. Lelis, 2002 .

22 kV SiC Emitter turn-off (ETO) thyristor and its dynamic performance including SOA

A. Huang, J. Palmour, C. Scozzie, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

22 kV, 1 cm2, 4H-SiC n-IGBTs with improved conductivity modulation

S. Ryu, J. Richmond, J. Palmour, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of VF, Current Saturation Capability and Fast Switching Speed

A. Agarwal, J. Richmond, J. Palmour, 2010 .

15-kV single-bias all-optical ETO thyristor

A. Agarwal, S. Mazumder, L. Cheng, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Safe Operating Area and Long-Term Reliability of 9-kV Silicon Carbide PNPN Super Gate Turn-Off Thyristors

Stephen B. Bayne, Lin Cheng, Kevin Lawson, 2014, IEEE Electron Device Letters.

DV/DT immunity and recovery time capability of 1.0 cm2 silicon carbide SGTO

A. Agarwal, C. Scozzie, V. Temple, 2012, 2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC).

Development and pulse evaluation of silicon carbide SGTO modules

A. Agarwal, Qingchun Zhang, C. Scozzie, 2010, 2010 IEEE International Power Modulator and High Voltage Conference.

Wide-pulse evaluation of 0.5 cm2 silicon carbide SGTO

A. Agarwal, C. Scozzie, V. Temple, 2009, 2009 IEEE Pulsed Power Conference.

10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems

David Grider, Lin Cheng, John W. Palmour, 2014, 2014 IEEE Energy Conversion Congress and Exposition (ECCE).

1000-V, 30-A 4H-SiC BJTs with high current gain

S. Bayne, C. Scozzie, S. Balachandran, 2005, IEEE Electron Device Letters.

Recent progress in SiC bipolar junction transistors

S. Bayne, C. Scozzie, Sei-Hyung Ryu, 2004, 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs.

A 9-kV Normally-on Vertical-Channel SiC JFET for Unipolar Operation

C. Scozzie, V. Veliadis, H. Hearne, 2010, IEEE Electron Device Letters.

Novel packaging and high-current pulse-switching of 1.0 cm2 SiC SGTOs

A. Agarwal, C. Scozzie, V. Temple, 2012, 2012 Lester Eastman Conference on High Performance Devices (LEC).

Performance Comparison of 1.5kV 4H-SiC Buried Channel and Lateral Channel JBS Rectifiers

A. Agarwal, T. Chow, C. Scozzie, 2006 .

1.5kV Novel 4H-SiC Lateral Channel (LC) JBS Rectifiers with Low Leakage Current and Capacitance

A. Agarwal, T. Chow, C. Scozzie, 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..

Evaluation of SiC JFET Performance During Repetitive Pulsed Switching Into an Unclamped Inductive Load

P. Borodulin, C. Scozzie, V. Veliadis, 2014, IEEE Transactions on Plasma Science.

Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs

A. Agarwal, S. Ryu, S. Krishnaswami, 2006 .

4kV 4H-SiC Epitaxial Emitter Bipolar Junction Transistors

A. Agarwal, T. Chow, C. Scozzie, 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..

High Temperature Unclamped Inductive Switching Mode Evaluation of SiC JFET

C. Scozzie, V. Veliadis, S. B. Bayne, 2013, IEEE Electron Device Letters.

Charge Pumping Measurements on SiC MOSFETs

C. Scozzie, J. McGarrity, 1997 .

4 kV 4H-SiC epitaxial emitter bipolar junction transistors

A. Agarwal, T. Chow, C. Scozzie, 2005, IEEE Electron Device Letters.

Large Area Silicon Carbide Vertical Junction Field Effect Transistors for High Temperature Power Conditioning Applications

T. McNutt, C. Scozzie, V. Veliadis, 2007, 2007 IEEE Vehicle Power and Propulsion Conference.

Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300°C NO Anneal

J. Scofield, S. Krishnaswami, B. Hull, 2006 .

High temperature silicon carbide FETs for radiation environments

C. Scozzie, J. McGarrity, J. Blackburn, 1995, 1995 IEEE Nuclear Science Symposium and Medical Imaging Conference Record.

600-V / 2-A Symmetrical Bi-Directional Power Flow Using Vertical-Channel JFETs Connected in Common Source Configuration

Robert S. Howell, Damian Urciuoli, Harold Hearne, 2010 .

Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to over 2 Million 600-V Hard Switch Stressing Events

P. Borodulin, C. Scozzie, V. Veliadis, 2013 .

Reliable Operation of 1200-V SiC Vertical Junction-Field-Effect-Transistor Subjected to 16,000-Pulse Hard Switching Stressing

C. Scozzie, V. Veliadis, H. Ha, 2012 .

600-V Symmetrical Bi-Directional Power Switching Using SiC Vertical-Channel JFETs with Reliable Edge Termination

C. Scozzie, V. Veliadis, H. Hearne, 2011 .

VJFET Based All-SiC Normally-Off Cascode Switch for High Temperature Power Handling Applications

T. McNutt, C. Scozzie, V. Veliadis, 2009 .

Ultra high voltage MOS controlled 4H-SiC power switching devices

C. W. Tipton, J. Casady, S. Ryu, 2015 .

Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors

R. Howell, C. Scozzie, V. Veliadis, 2012 .

Analysis of SiC BJT RBSOA

Bin Chen, A. Agarwal, A. Huang, 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.

High performance, large-area, 1600 V / 150 A, 4H-SiC DMOSFET for robust high-power and high-temperature applications

A. Agarwal, S. Ryu, J. Richmond, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Evaluation of high-voltage, high-power 4H-SiC insulated-gate bipolar transistors

C. Scozzie, S. Bayne, H. O’Brien, 2014, 2014 IEEE International Power Modulator and High Voltage Conference (IPMHVC).

High Temperature Characterization of 4H-SiC Bipolar Junction Transistors

A. Agarwal, S. Ryu, S. Krishnaswami, 2006 .

Emitter Size Effect in 4H-SiC BJT

A. Agarwal, A. Huang, S. Krishnaswami, 2006, 2006 CES/IEEE 5th International Power Electronics and Motion Control Conference.

1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs

A. Agarwal, T. Chow, S. Ryu, 2005 .

Turn-on capability of 22 kV SiC Emitter Turn-off (ETO) Thyristor

A. Huang, J. Palmour, C. Scozzie, 2015, 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

SiC super GTO thyristor technology development: Present status and future perspective

Heather O'Brien, Aderinto Ogunniyi, C. Capell, 2011, 2011 IEEE Pulsed Power Conference.

Advanced silicon carbide gate turn-off thyristor for energy conversion and power grid applications

H. O'Brien, C. Scozzie, C. Capell, 2012, 2012 IEEE Energy Conversion Congress and Exposition (ECCE).

Development of SiC multi-chip module for pulse switching at 10 kV, 100 kA

C. Scozzie, V. Temple, H. O’Brien, 2015, 2015 IEEE Pulsed Power Conference (PPC).

27 kV, 20 A 4H-SiC n-IGBTs

Lin Cheng, C. W. Tipton, John W. Palmour, 2015 .

Solid-state Marx generator with 24 KV 4H-SIC IGBTs

E. van Brunt, C. Scozzie, H. O’Brien, 2015, IEEE International Pulsed Power Conference.

Reliability of High Voltage 4H-SiC MOSFET Devices

A. Agarwal, J. Scofield, S. Ryu, 2006 .

4H-SiC Bipolar Junction Transistors with a Current Gain of 108

A. Agarwal, R. Callanan, J. Palmour, 2008 .

Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings

Alex Q. Huang, David E. Grider, Lin Cheng, 2014 .

15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors

Lin Cheng, Anant K. Agarwal, John W. Palmour, 2013 .

16 kV, 1 cm2, 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications

A. Agarwal, J. Richmond, J. Palmour, 2013 .

Advances in pulsed-laser-deposited AIN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications

V. N. Kulkarni, R. Vispute, C. Scozzie, 2006 .

Effect of Bipolar Gate-to-Drain Current on the Electrical Properties of Vertical Junction Field Effect Transistors

T. McNutt, C. Scozzie, V. Veliadis, 2009 .

Pulsed power capacitor development and outlook

J. Macdonald, T. Jow, F. Macdougall, 2015, 2015 IEEE Pulsed Power Conference (PPC).

High energy density capacitors for pulsed power applications

Xiao Hui Yang, Nathan Keller, Janet Ho, 2009, 2009 IEEE Pulsed Power Conference.

Development of 1200 V, 3.7 mΩ-cm2 4H-SiC DMOSFETs for Advanced Power Applications

Lin Cheng, Anant K. Agarwal, Aivars J. Lelis, 2012 .

A 2055-V (at 0.7 $\hbox{mA/cm}^{2}$) 24-A (at 706 $\hbox{W/cm}^{2}$) Normally On 4H-SiC JFET With 6.8- $\hbox{mm}^{2}$ Active Area and Blocking-Voltage Capability Reaching the Material Limit

C. Scozzie, H. Hearne, V. Veliadis, 2008, IEEE Electron Device Letters.

20 kV, 2 cm2, 4H-SiC gate turn-off thyristors for advanced pulsed power applications

Lin Cheng, Anant K. Agarwal, Edward Van Brunt, 2013, 2013 Abstracts IEEE International Conference on Plasma Science (ICOPS).

Silicon carbide FETs for high temperature nuclear environments

Charles Scozzie, C. Scozzie, J. McGarrity, 1996 .

Analysis of neutron damage in high-temperature silicon carbide JFETs

C. W. Tipton, Charles Scozzie, C. Scozzie, 1994 .

Analysis of carrier lifetime effects on HV SIC PiN diodes at elevated pulsed switching conditions

C. Scozzie, S. Bayne, Lin Cheng, 2015, 2015 IEEE Pulsed Power Conference (PPC).

Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs

Anant K. Agarwal, Aivars J. Lelis, John W. Palmour, 2010 .

Degradation and Full Recovery in High-Voltage Implanted-Gate SiC JFETs Subjected to Bipolar Current Stress

C. Scozzie, H. Hearne, V. Veliadis, 2012, IEEE Electron Device Letters.

Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes

A. Agarwal, J. Palmour, M. O'loughlin, 2010 .

The benefits and current progress of SiC SGTOs for pulse power applications

A. Agarwal, R. Callanan, C. Scozzie, 2009, 2009 International Semiconductor Device Research Symposium.

Comparison of channel mobility and oxide properties of MOSFET devices on Si-face (0001) and A-face (11-20) 4H-SiC

J. Palmour, D. Lichtenwalner, C. Scozzie, 2014 .

A 1680-V (at 1 {mA/cm}(2) ) 54-A (at 780 {W/cm}(2) ) Normally ON 4H-SiC JFET With 0.143- {cm}(2) Active Area

H. Hearne, Victor Veliadis, T. McNutt, 2008 .

High-Mobility Stable 1200-V, 150-A 4H-SiC DMOSFET Long-Term Reliability Analysis Under High Current Density Transient Conditions

Stephen B. Bayne, Lin Cheng, Argenis Bilbao, 2015, IEEE Transactions on Power Electronics.

4H–SiC BJTs with current gain of 110

Anant K. Agarwal, Charles Scozzie, Qingchun Zhang, 2008 .

1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70

Anant K. Agarwal, Robert Callanan, Charles Scozzie, 2008 .

12 kV, 1 cm2 SiC GTO Thyristors with Negative Bevel Termination

Lin Cheng, Anant K. Agarwal, Michael E. Levinshtein, 2012 .

Large chip area SiC PiN diodes demonstrated for thyristor protection in a pulsed system

C. Scozzie, S. Bayne, Lin Cheng, 2014, 2014 IEEE International Power Modulator and High Voltage Conference (IPMHVC).

High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications

B. Hull, J. Richmond, M. Das, 2006 .

3.7 mΩ-cm2, 1500 V 4H-SiC DMOSFETs for advanced high power, high frequency applications

Lin Cheng, Sei-Hyung Ryu, John Palmour, 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs

A. Agarwal, S. Ryu, J. Richmond, 2012 .

Evaluation of Advanced Si and SiC Switching Components for Army Pulsed Power Applications

C. Scozzie, S. Bayne, H. O’Brien, 2007, IEEE Transactions on Magnetics.

Evaluation of high-voltage, high-power 4H-SiC insulated-gate bipolar transistors

C. Scozzie, S. Bayne, H. O’Brien, 2014, 2014 IEEE International Power Modulator and High Voltage Conference (IPMHVC).

9 kV, 1 cm2 SiC Gate Turn-Off Thyristors

Anant K. Agarwal, John W. Palmour, Robert Callanan, 2010 .