D. Peters

发表

Strategic Considerations for Unipolar SiC Switch Options: JFET vs. MOSFET

D. Peters, P. Friedrichs, R. Elpelt, 2007, 2007 IEEE Industry Applications Annual Meeting.

SiC power devices with low on-resistance for fast switching applications

P. Friedrichs, D. Stephani, H. Mitlehner, 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).

Reliability of SiC Power Devices Against Cosmic Radiation-Induced Failure

M. Treu, D. Peters, G. Soelkner, 2007 .

Integrated optical devices with silicon oxynitride prepared by plasma-enhanced chemical vapor deposition (PECVD) on Si and GaAs substrates

D. Peters, Joerg H. Mueller, 1991, Other Conferences.

Planar aluminum-implanted 1400 V 4H silicon carbide p-n diodes with low on resistance

Peter Friedrichs, P. Friedrichs, D. Peters, 1997 .

Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications

P. Friedrichs, D. Stephani, R. Rupp, 1997 .

Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype

P. Friedrichs, D. Stephani, P. Friedrichs, 1999, IEEE Electron Device Letters.

An 1800 V triple implanted vertical 6H-SiC MOSFET

Peter Friedrichs, D. Stephani, H. Mitlehner, 1999 .

Detailed investigation of n-channel enhancement 6H-SiC MOSFETs

Peter Friedrichs, P. Friedrichs, D. Peters, 1999 .

SiC JFET: Currently the Best Solution for an Unipolar SiC High Power Switch

Peter Friedrichs, Roland Rupp, P. Friedrichs, 2008 .

Charge Pumping Measurements on Differently Passivated Lateral 4H-SiC MOSFETs

Peter Friedrichs, Lothar Frey, Gregor Pobegen, 2015, IEEE Transactions on Electron Devices.

Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO2 interface

G. Pobegen, D. Peters, T. Aichinger, 2017, 1709.08664.

Thermoelectric properties of amorphous antimony

J. N. Fox, D. Peters, J. Trefny, 1984 .

The New CoolSiC™ Trench MOSFET Technology for Low Gate Oxide Stress and High Performance

W. Bergner, R. Siemieniec, D. Peters, 2017 .

Characterization of fast 4.5 kV SiC p-n diodes

P. Friedrichs, D. Stephani, H. Mitlehner, 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).

Silicon coatings on copper by chemical vapor deposition in fluidized bed reactors

D. Peters, B. Wood, A. Sanjurjo, 1991 .

Growth and electrical properties of epitaxial CuInS2 thin films on GaAs substrates

D. Peters, A. Tempel, G. Kühn, 1979 .

Electrical Properties of CuGaTe2 Epitaxial Layers

D. Peters, G. Kühn, H. Neumann, 1979, April 16.

A nitrogen-related deep level defect in ion implanted 4H-SiC pn junctions—A spin dependent recombination study

D. Peters, T. Aichinger, B. Tuttle, 2012 .

Investigation of threshold voltage stability of SiC MOSFETs

Katja Puschkarsky, Hans Reisinger, Thomas Basler, 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Enhanced channel mobility of 4H–SiC metal–oxide–semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation

Peter Friedrichs, Sima Dimitrijev, Dietrich Stephani, 2002 .

A SiC Trench MOSFET concept offering improved channel mobility and high reliability

Ralf Siemieniec, Thomas Basler, Thomas Aichinger, 2017, 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe).

6.5 kV SiC PiN Diodes with Improved Forward Characteristics

W. Bartsch, R. Sommer, D. Peters, 2010 .

1700 V SiC Schottky Diodes Scaled to 25 A

D. Stephani, C. Hecht, K. Dohnke, 2001 .

Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N2O or NO

Peter Friedrichs, Tsunenobu Kimoto, Heiner Ryssel, 2009 .

MOS Interface Characteristics of In Situ Ge-Doped 4H-SiC Homoepitaxial Layers

G. Ferro, P. Friedrichs, D. Peters, 2015 .

Interface Defects and Negative Bias Temperature Instabilities in 4H-SiC PMOSFETs – A Combined DCIV/SDR Study

Patrick M. Lenahan, Thomas Aichinger, D. Peters, 2013 .

Performance and ruggedness of 1200V SiC — Trench — MOSFET

Ralf Siemieniec, Thomas Basler, Thomas Aichinger, 2017, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).

Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal–Oxide–Semiconductor Devices

P. Friedrichs, T. Kimoto, D. Peters, 2011 .

Large Area, Avalanche-Stable 4H-SiC PiN Diodes with VBR > 4.5 kV

P. Friedrichs, D. Stephani, K. Dohnke, 2005 .

Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices

P. Friedrichs, T. Kimoto, D. Peters, 2010 .

A Surge Current Stable and Avalanche Rugged SiC Merged pn Schottky Diode Blocking 600V Especially Suited for PFC Applications

Roland Rupp, T. Reimann, M. Treu, 2006 .

SXRT Investigations on Electrically Stressed 4H-SiC PiN Diodes for 6.5 kV

P. Friedrichs, C. Hecht, D. Peters, 2013 .

Characterization of Packaged 6.5 kV SiC PiN-Diodes up to 300 °C

K. Dohnke, D. Peters, R. Schörner, 2012 .

An Experimental Study of High Voltage SiC PiN Diode Modules Designed for 6.5 KV / 1 KA

T. Duetemeyer, R. Sommer, D. Peters, 2011 .

4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications

P. Friedrichs, D. Stephani, D. Peters, 2003 .

Influence of the Oxidation Temperature and Atmosphere on the Reliability of Thick Gate Oxides on the 4H-SiC C(000-1) Face

P. Friedrichs, H. Ryssel, D. Peters, 2008 .

Rugged Power MOSFETs in 6H-SiC with Blocking Capability up to 1800V

Peter Friedrichs, Heinz Mitlehner, Dietrich Stephani, 2000 .

SiC Power MOSFETs – Status, Trends and Challenges

P. Friedrichs, D. Stephani, D. Peters, 2006 .

Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides

Peter Friedrichs, Tsunenobu Kimoto, Heiner Ryssel, 2010 .

Switching behaviour of fast high voltage SiC pn-diodes

P. Friedrichs, D. Stephani, H. Mitlehner, 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

Switching performance of a 1200 V SiC-Trench-MOSFET in a low-power module

Daniel Domes, Daniel Heer, D. Peters, 2016 .

1200V SiC Trench-MOSFET Optimized for High Reliability and High Performance

R. Esteve, T. Aichinger, W. Bergner, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Comparison of 4H-SiC pn, Pinch and Schottky Diodes for the 3 kV Range

Peter Friedrichs, Dietrich Stephani, P. Friedrichs, 2002 .