G. Dolny

发表

Silicon carbide: barriers to manufacturable devices

J. Shovlin, R. Woodin, T. Witt, 2005, IEEE/SEMI Conference and Workshop on Advanced Semiconductor Manufacturing 2005..

The effect of temperature on lateral DMOS transistors in a power IC technology

G. Dolny, G. E. Nostrand, K. E. Hill, 1992 .

The influence of body effect and threshold voltage reduction on trench MOSFET body diode characteristics

G. Dolny, S. Sapp, A. Elbanhaway, 2004, 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs.

Growth and reliability of thick gate oxide in U-trench for power MOSFETs

S. A. Suliman, O. Awadelkarim, C.-T. Wu, 2002, Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.

Characterization and modeling of the temperature dependence of lateral DMOS transistors for high-temperature applications of power ICs

G. Dolny, G. E. Nostrand, K. E. Hill, 1990, International Technical Digest on Electron Devices.

High-voltage semiconductor devices: status and trends

G. Dolny, G.M. Dolny, 2005, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005..

Schottky Source LDMOS - Electrical SOA Improvement through BJT Suppression

G. Dolny, W. Richards, R. Granzner, 2020, 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

The effects of channel boron-doping on the performance and hot electron reliability of N-channel trench UMOSFETs

S. A. Suliman, O. Awadelkarim, G. Dolny, 2001 .

Gate-Oxide grown on the sidewalls and base of a U-shaped Si trench: effects of the Oxide and Oxide/Si interface condition on the properties of vertical MOS devices

S. A. Suliman, O. Awadelkarim, G. Dolny, 2004 .

Electrical properties of the gate oxide and its interface with Si in U-shaped trench MOS capacitors: The impact of polycrystalline Si doping and oxide composition

S. A. Suliman, O. Awadelkarim, C.-T. Wu, 2003 .

Fowler-Nordheim and hot carrier reliabilities of U-shaped trench-gated transistors studied by three terminal charge pumping

Osama O. Awadelkarim, Lucas Jay Passmore, Gary M. Dolny, 2006 .

Modified three terminal charge pumping technique applied to vertical transistor structures

Osama O. Awadelkarim, Lucas Jay Passmore, Gary M. Dolny, 2005 .

Electron and hole trapping in the bulk and interface with Si of a thermal oxide grown on the sidewalls and base of a U-shaped silicon trench

O. Awadelkarim, G. Dolny, J. Hao, 2002 .

The dependence of UMOSFET characteristics and reliability on geometry and processing

O. Awadelkarim, G. Dolny, J. Hao, 2001 .

A SPICE II subcircuit representation for power MOSFETs using empirical methods

C. F. Wheatley, H. R. Ronan, G. M. Dolny, 1985 .

Application Note 7534 A New PSPICE Electro-Thermal Subcircuit For Power MOSFETs

Alain Laprade, Scott Pearson, Stan Benczkowski, 2003 .

Application Note 7533 A Revised MOSFET Model With Dynamic Temperature Compensation

Alain Laprade, Scott Pearson, Stan Benczkowski, 2003 .

Static and dynamic characterization of large-area high-current-density SiC Schottky diodes

M. Zafrani, M. Melloch, J. Cooper, 1998, 56th Annual Device Research Conference Digest (Cat. No.98TH8373).

Development of 640 x 480 LWIR focal plane arrays

John R. Tower, Frank V. Shallcross, Dietrich Meyerhofer, 1992, Defense, Security, and Sensing.

Laser Doppler Study of the Onset of Turbulent Convection at Low Prandtl Number

H. Swinney, J. Gollub, G. Dolny, 1977 .

Effect of nitridation on the reliability of thick gate oxides

J. Linn, C.-T. Wu, G. Dolny, 2003, Microelectron. Reliab..

Increase of SiC Substrate Resistance Induced by Annealing

Janna R. B. Casady, J. Casady, J. Shovlin, 2010 .

The influence of body effect on the short-circuit ruggedness of emitter ballasted IGBTs

G. Dolny, P. Shenoy, A. Bhalla, 2001, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).

JFET Depletion in SuperJunction Devices

D. Disney, G. Dolny, G. Dolny, 2008, 2008 20th International Symposium on Power Semiconductor Devices and IC's.

Enhanced CMOS for analog-digital power IC applications

O.H. Schade, G.M. Dolny, B. Goldsmith, 1986, IEEE Transactions on Electron Devices.

The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs

Levent Trabzon, Osama O. Awadelkarim, Jerzy Ruzyllo, 2001, 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).