S. Ha

发表

Nucleation sites of recombination-enhanced stacking fault formation in silicon carbide p-i-n diodes

S. Ha, M. Skowronski, H. Lendenmann, 2004 .

Degradation of hexagonal silicon-carbide-based bipolar devices

Marek Skowronski, S. Ha, M. Skowronski, 2006 .

A Simple Mapping Method for Elementary Screw Dislocations in Homoepitaxial SiC Layers

S. Ha, M. Skowronski, M. Dudley, 2002 .

Origin of domain structure in hexagonal silicon carbide boules grown by the physical vapor transport method

M. Graef, S. Ha, M. Skowronski, 2000 .

Identification of prismatic slip bands in 4H SiC boules grown by physical vapor transport

M. Graef, S. Ha, M. Skowronski, 2000 .

Cross-sectional structure of carrot defects in 4H–SiC epilayers

J. Sumakeris, M. O'loughlin, S. Ha, 2004 .

Driving force of stacking-fault formation in SiC p-i-n diodes.

M. Das, J. Sumakeris, M. Paisley, 2004, Physical review letters.

Core structure and properties of partial dislocations in silicon carbide p-i-n diodes

S. Ha, M. Skowronski, H. Lendenmann, 2003 .

Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices

John W. Palmour, H. Lendenmann, Marek Skowronski, 2006 .

Dislocation conversion in 4H silicon carbide epitaxy

Marek Skowronski, S. Ha, M. Skowronski, 2002 .

Integrated process modeling and experimental validation of silicon carbide sublimation growth

S. Ha, M. Skowronski, Hui Zhang, 2003 .

Morphology of basal plane dislocations in 4H-SiC homoepitaxial layers grown by chemical vapor deposition

J. Sumakeris, M. Paisley, M. O'loughlin, 2007 .

Dislocation nucleation in 4H silicon carbide epitaxy

Marek Skowronski, S. Ha, M. Skowronski, 2004 .

Structure of Carrot Defects in 4H-SiC Epilayers

S. Ryu, J. Sumakeris, M. Paisley, 2006 .

Assessment of Polishing-Related Surface Damage in Silicon Carbide

S. Ha, M. Skowronski, M. Dudley, 2002 .

Basal plane slip and formation of mixed-tilt boundaries in sublimation-grown hexagonal polytype silicon carbide single crystals

Michael Dudley, Marek Skowronski, S. Ha, 2002 .

Plastic Deformation and Residual Stresses in SiC Boules Grown by PVT

V. D. Heydemann, Marek Skowronski, S. Ha, 2000 .

Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices

M. Das, J. Palmour, J. Sumakeris, 2005 .

Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices

John W. Palmour, Marek Skowronski, Mrinal K. Das, 2004 .

Stacking fault formation in SiC p-i-n diodes of (11-20) orientation

M. Das, J. Sumakeris, M. Paisley, 2004 .