X. Jordà

发表

An IGBT gate driver integrated circuit with full-bridge output stage and short circuit protections

M. Vellvehi, A. Perez, X. Jorda, 2003, 2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No.03TH8676).

Electron irradiation effects on static <100> and <111> power MOS-gated devices

P. Godignon, X. Jordà, J. Millán, 2000, 2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486).

Physical modelling of large area 4H-SiC PiN diodes

P. Godignon, E. Santi, J. Hudgins, 2009, 2009 IEEE Energy Conversion Congress and Exposition.

Dynamic latch-up in advanced LIGBT structures at high operating temperatures

P. Godignon, X. Jordà, M. Vellvehí, 2000 .

Hot spot analysis in integrated circuit substrates by laser mirage effect

X. Jordà, M. Vellvehí, X. Perpiñà, 2011 .

Short-circuit capability in p-GaNHEMTs and GaNMISHEMTs

X. Jordà, M. Vellvehí, M. Tack, 2017, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).

P-GaN HEMTs Drain and Gate Current Analysis Under Short-Circuit

X. Jordà, M. Vellvehí, M. Tack, 2017, IEEE Electron Device Letters.

Thermal Analysis of LED Lamps for Optimal Driver Integration

X. Jordà, M. Vellvehí, X. Perpiñà, 2015, IEEE Transactions on Power Electronics.

Innovative packaging solution for power and thermal management of wide-bandgap semiconductor devices in space applications

X. Jordà, M. Vellvehí, J. Bárcena, 2006 .

Power Losses and Current Distribution Studies by Infrared Thermal Imaging in Soft- and Hard-Switched IGBTs Under Resonant Load

X. Jordà, M. Vellvehí, X. Perpiñà, 2020, IEEE Transactions on Power Electronics.

Layout Role in Failure Physics of IGBTs Under Overloading Clamped Inductive Turnoff

I. Cortes, X. Perpina, X. Jorda, 2013, IEEE Transactions on Electron Devices.

A Highly Effective Edge Termination Design for SiC Planar High Power Devices

P. Godignon, N. Mestres, X. Jordà, 2004 .

Silver nano-particles sintering process for the die-attach of power devices for high temperature applications

X. Jorda, Miquel Vellvehí, Xavier Perpiñà, 2012 .

Silver nanoparticles sintering process for the die-attach of power devices for high temperature applications

M. Vellvehi, X. Perpiñà, X. Jordà, 2012 .

Internal infrared laser deflection system: a tool for power device characterization

M. Vellvehi, Xavier Jordà, Phillippe Godignon, 2004 .

Lock-in Infrared Thermography: A tool to locate and analyse failures in power devices

X. Jordà, M. Vellvehí, J. Millán, 2017, Spanish Conference on Electron Devices.

Study of heat sources interacting in integrated circuits by laser mirage effect

X. Jordà, M. Vellvehí, X. Perpiñà, 2014 .

Location of hot spots in integrated circuits by monitoring the substrate thermal-phase lag with the mirage effect.

N. Mestres, X. Jordà, M. Vellvehí, 2010, Optics letters.

Free Carrier Absorption investigations on ion irradiated fast recovery diodes

J. Vobecký, X. Jordà, M. Vellvehí, 2010, 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD).

FAST TRACK COMMUNICATION: Laser beam deflection-based perimeter scanning of integrated circuits for local overheating location

N. Mestres, X. Jordà, M. Vellvehí, 2009 .

Hot-Spot Detection in Integrated Circuits by Substrate Heat-Flux Sensing

N. Mestres, X. Jordà, M. Vellvehí, 2008, IEEE Electron Device Letters.

Development of an analog processing circuit for IR-radiation power and noncontact position measurements

N. Mestres, X. Jordà, M. Vellvehí, 2005 .

In-situ measurements of material thermal parameters for accurate LED lamp thermal modelling

X. Jordà, M. Vellvehí, X. Perpiñà, 2013, 19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).

Electro-Optical Method for Surface Recombination Evaluation in Silicon Carbide Bipolar Junction Transistors

X. Jordà, V. Banu, J. Montserrat, 2019 .

Surface Recombination Evaluation in Bipolar Junction Transistors by Combined Electro-Optical Method

X. Jordà, V. Banu, J. Montserrat, 2018, 2018 International Semiconductor Conference (CAS).

High Temperature Compensated Voltage Reference Integrated Circuits on 4H-SiC Material

M. Alexandru, X. Jordà, J. Millán, 2015 .

High Temperature Electrical Characterization of 4H-SiC MESFET Basic Logic Gates

M. Alexandru, M. Florentin, X. Jordà, 2014 .

Origin of large negative electrocaloric effect in antiferroelectric PbZrO3

X. Jordà, M. Vellvehí, E. Defay, 2020, 2009.02184.

Comparative evaluation of high current SiC Schottky diodes and Si PN junction diodes

P. Godignon, A. Perez, X. Jordà, 2005, Conference on Electron Devices, 2005 Spanish.

Temperature Impact on High-Current 1.2kV SiC Schottky Rectifiers

P. Godignon, X. Jordà, J. Millán, 2005 .

IR Lock-In Thermography Analysis to Evidence Dynamic Mis-Behavior of SiC Device Prototypes

P. Godignon, X. Jordà, D. Tournier, 2015 .

Carbon–Silica Composites to Produce Highly Robust Thin‐Film Electrochemical Microdevices

X. Jordà, A. Roig, A. Goñi, 2017 .

Small signal thermal analysis of local multibarrier behaviour in SiC Schottky diodes

X. Jordà, M. Vellvehí, M. Berthou, 2014 .

Structural analysis of SiC Schottky diodes failure mechanism under current overload

X. Jordà, M. Vellvehí, M. Berthou, 2014 .

Thermo-Mechanical Constraints for Packaging of Diamond Components

X. Jordà, M. Vellvehí, X. Perpiñà, 2022, 2022 IEEE International Workshop on Integrated Power Packaging (IWIPP).

Characterization of MOSFET Temperature Sensors for On-chip Dynamic Thermal Measurements

X. Jordà, M. Vellvehí, J. Leon, 2015 .

Dopant Incomplete Ionization Role in SiC Schottky Diode Edge Termination under Current Over-Stress

X. Jordà, M. Vellvehí, X. Perpiñà, 2022, 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe).

Analysis of Natural Convection Cooling Solutions for GaN HEMT Transistors

X. Jordà, M. Vellvehí, X. Perpiñà, 2018, 2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe).

Low loss, large area 4.5 kV 4H-SiC PIN diodes with reduced forward voltage drift

P. Godignon, J. Bergman, X. Jordà, 2009 .

Failure analysis in power devices using lock-in infrared thermography

X. Jordà, M. Vellvehí, X. Perpiñà, 2018, 2018 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).

Direct Visualization of Anti‐Ferroelectric Switching Dynamics via Electrocaloric Imaging

X. Jordà, M. Vellvehí, E. Defay, 2021, Advanced Electronic Materials.

Power module electronics in HEV/EV applications: New trends in wide-bandgap semiconductor technologies and design aspects

Jon Andreu, Edorta Ibarra, J. Rebollo, 2019, Renewable and Sustainable Energy Reviews.

Temperature effects on the ruggedness of SiC Schottky diodes under surge current

Philippe Godignon, Xavier Jordà, X. Perpiñà, 2014, Microelectron. Reliab..

Simulation-Based Analysis of Thermo-Mechanical Constraints in Packages for Diamond Power Devices

P. Godignon, X. Jordà, M. Vellvehí, 2020, 2020 21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).

3C-SiC films on insulated substrates for high-temperature electrostatic-based resonators

M. Placidi, N. Mestres, G. Abadal, 2010 .

Thermomechanical Assessment of Die-Attach Materials for Wide Bandgap Semiconductor Devices and Harsh Environment Applications

Philippe Godignon, Miquel Vellvehi, Josep Montserrat, 2014, IEEE Transactions on Power Electronics.

High temperature behaviour of 3.5 kV 4H-SiC JBS diodes

X. Jorda, M. Vellvehi, P. Godignon, 2007, Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.

DC temperature measurements for power gain monitoring in RF power amplifiers

Diego Mateo, Josep Altet, Xavier Jordà, 2012, 2012 IEEE International Test Conference.

Efficiency determination of RF linear power amplifiers by steady-state temperature monitoring using built-in sensors

José Luis González, Miquel Vellvehi, Diego Mateo, 2013 .

Wireless pad-free integrated circuit debugging by powering modulation and lock-in infrared sensing

X. Jordà, M. Vellvehí, A. Baldi, 2013 .

Irradiance-based emissivity correction in infrared thermography for electronic applications.

X. Jordà, M. Vellvehí, X. Perpiñà, 2011, The Review of scientific instruments.

A heterodyne method for the thermal observation of the electrical behavior of high-frequency integrated circuits

E. Aldrete-Vidrio, Miquel Vellvehi, Diego Mateo, 2008 .

Transmission Fabry–Pérot interference thermometry for thermal characterization of microelectronic devices

M. Vellvehi, J. Millan, Xavier Jordà, 2006 .

Analysis of Excess Carrier Concentration Control in Fast-Recovery High Power Bipolar Diodes at Low Current Densities

N. Mestres, J. Vobecký, X. Jordà, 2010 .

Reliability and Robustness Tests for Next-Generation High-Voltage SiC MOSFETs

Maria R. Rogina, A. Mihaila, X. Jordà, 2021, IEEE Journal of Emerging and Selected Topics in Power Electronics.

Electrical parameter variation of PT-IGBT by backside proton irradiation

X. Jorda, M. Vellvehi, P. Godignon, 2003, 2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No.03TH8676).

Analysis of SiC Schottky diodes after thermal vacuum test by means of lock-in infrared thermography

P. Godignon, X. Jordà, M. Vellvehí, 2020, 2020 21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).

GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling

J. Millan, Amador Pérez-Tomás, Xavier Jordà, 2009 .

Single-MOSFET DC thermal sensor for RF-amplifier central frequency extraction

Ferran Reverter, Javier León, Miquel Vellvehi, 2017 .

MOSFET dynamic thermal sensor for IC testing applications

Ferran Reverter, Javier León, Miquel Vellvehi, 2016 .

Spatially and frequency-resolved monitoring of intradie capacitive coupling by heterodyne excitation infrared lock-in thermography

X. Jordà, M. Vellvehí, J. Leon, 2013 .

Thermal phase lag heterodyne infrared imaging for current tracking in radio frequency integrated circuits

Ferran Reverter, Javier León, Miquel Vellvehi, 2017 .

Temperature sensors and measurements to test analogue circuits: questions and answers

F. Reverter, X. Perpina, M. Vellvehi, 2016, 2016 IEEE 21st International Mixed-Signal Testing Workshop (IMSTW).

Local non invasive study of SiC diodes with abnormal electrical behavior

X. Jordà, M. Vellvehí, J. Leon, 2015 .

Study of surface weak spots on SiC Schottky Diodes under specific operating regimes by Infrared Lock-in sensing

Philippe Godignon, Xavier Jordà, X. Perpiñà, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Physically based analysis of electrical frequency response of passive microelectronic circuits by heterodyne lock-in thermal means

X. Jordà, M. Vellvehí, J. Leon, 2013 .

Low-cost and versatile thermal test chip for power assemblies assessment and thermometric calibration purposes

M. Vellvehi, J. Millan, David Flores, 2011 .

Output Power and Gain Monitoring in RF CMOS Class A Power Amplifiers by Thermal Imaging

Ferran Reverter, Enrique Barajas, Josep Altet, 2019, IEEE Transactions on Instrumentation and Measurement.

Heterodyne lock-in thermal coupling measurements in integrated circuits: Applications to test and characterization.

X. Jordà, S. Dilhaire, W. Claeys, 2009, Review of Scientific Instruments.

High-power test device for package thermal assessment and validation of thermal measurement techniques

Miquel Vellvehi, Josep Altet, Xavier Jorda, 2010, 2010 16th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).

Steady-state sinusoidal thermal characterization at chip level by internal infrared-laser deflection

Miquel Vellvehi, Josep Altet, Xavier Jordà, 2008 .

Validation of Dynamic Thermal Simulations of Power Assemblies Using a Thermal Test Chip

P. Godignon, X. Jordà, M. Vellvehí, 2007, 2007 International Conference on Thermal, Mechanical and Multi-Physics Simulation Experiments in Microelectronics and Micro-Systems. EuroSime 2007.

Short-Circuit Study in Medium-Voltage GaN Cascodes, p-GaN HEMTs, and GaN MISHEMTs

Filip Bauwens, Marnix Tack, Xavier Jordà, 2017, IEEE Transactions on Industrial Electronics.

High-Frequency Ultrasonic Atomization With Pulsed Excitation

X. Jordà, F. Barreras, A. Lozano, 2003 .

High-Frequency Ultrasonic Atomization With Pulsed

X. Jordà, A. Lozano, H. Amaveda, 2003 .

Schottky versus bipolar 3.3 kV SiC diodes

J. Millan, Amador Pérez-Tomás, Xavier Jordà, 2008 .

Silicon carbide controlled current limiter, current limitation strategies, foreseen applications and benefits

X. Jorda, J. Millan, D. Tournier, 2004, The 4th International Power Electronics and Motion Control Conference, 2004. IPEMC 2004..

Thermal cycling analysis of high temperature die-attach materials

Xavier Jordà, L. A. Navarro, X. Perpiñà, 2012, Microelectron. Reliab..

SiC Schottky Diode surge current analysis and application design using behavioral SPICE models

P. Godignon, M. Alexandru, X. Jordà, 2012, CAS 2012 (International Semiconductor Conference).

SiC Integrated Circuit Control Electronics for High-Temperature Operation

Philippe Godignon, Dominique Tournier, Miquel Vellvehi, 2015, IEEE Transactions on Industrial Electronics.

SiC Schottky Diodes for Harsh Environment Space Applications

Philippe Godignon, Xavier Jordà, X. Perpiñà, 2011, IEEE Transactions on Industrial Electronics.

3.3 kV-10A 4H-SiC PiN Diodes

X. Jordà, J. Millán, P. Brosselard, 2008 .

SiC power DIMOS with double implanted Al/B P-well

P. Godignon, X. Jordà, M. Vellvehí, 2001 .

Electrical performance at high temperature and surge current of 1.2 kV power rectifiers: Comparison between Si PiN, 4H-SiC Schottky and JBS diodes

P. Godignon, X. Jordà, J. Millán, 2008, 2008 International Semiconductor Conference.

Bipolar Conduction Impact on Electrical Characteristics and Reliability of 1.2- and 3.5-kV 4H-SiC JBS Diodes

Philippe Godignon, Miquel Vellvehi, Viorel Banu, 2008, IEEE Transactions on Electron Devices.

Carrier Concentration Analysis in 1.2 kV SiC Schottky Diodes Under Current Crowding

X. Jordà, M. Vellvehí, X. Perpiñà, 2022, IEEE Electron Device Letters.

Temperature Dependence of 4H-SiC JBS and Schottky Diodes after High Temperature Treatment of Contact Metal

P. Godignon, N. Mestres, X. Jordà, 2005 .

Long-Term Reliability of Railway Power Inverters Cooled by Heat-Pipe-Based Systems

Michel Mermet-Guyennet, J. Rebollo, Xavier Jordà, 2011, IEEE Transactions on Industrial Electronics.

Analysis of Clamped Inductive Turnoff Failure in Railway Traction IGBT Power Modules Under Overload Conditions

J. Rebollo, Jean-François Serviere, Xavier Jordà, 2011, IEEE Transactions on Industrial Electronics.

Hot spot detection in integrated circuits laterally accessing to their substrate using a laser beam

X. Perpina, X. Jorda, M. Vellvehi, 2010, 2010 16th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).

An effective thermal conductivity measurement system

M. Vellvehi, J. Coleto, Jose Rebollo, 2004 .

Reliability and Lifetime Prediction for IGBT Modules in Railway Traction Chains

X. Jorda, M. Vellvehi, Michel Mermet-Guyennet, 2012 .

A New Vertical JFET Power Device for Harsh Radiation Environments

Miquel Vellvehi, P. Fernandez-Martinez, David Flores, 2017 .

A system to measure reverse recovery time and stored charge at ultrafast power diodes

P. Godignon, X. Jordà, J. Millán, 2001, 2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No.01TH8547).

Novel structures of 3.3kV 4H-SiC BJTs to reduce the Stacking Faults expansion

P. Godignon, E. Bano, X. Jordà, 2009, 2009 21st International Symposium on Power Semiconductor Devices & IC's.

The effect of the temperature on the Bipolar Degradation of 3.3 kV 4H-SiC PiN diodes

P. Godignon, J. Bergman, X. Jordà, 2008, 2008 20th International Symposium on Power Semiconductor Devices and IC's.

Study of AlN/SiO/sub 2/ as dielectric layer for SiC MOS structures

X. Jorda, S. Hidalgo, O. Biserica, 2000, 2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486).

Semiconductor power losses estimation method for matrix converter applications

Xavier Jorda, Xavier Perpinya, Jose-Luis Galvez, 2009, 2009 13th European Conference on Power Electronics and Applications.

Direct measurement of self-heating effects at the drift region of 600V PT-IGBTs

P. Godignon, N. Mestres, J. Vobecký, 2004, 2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716).

Solid-State Relay Solutions for Induction Cooking Applications Based on Advanced Power Semiconductor Devices

Sergio Llorente, Miquel Vellvehi, Xavier Jordà, 2019, IEEE Transactions on Industrial Electronics.