M. Vellvehí

X. Jordà, M. Vellvehí, X. Perpiñà, 2018, 2018 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).

Analysis of 1.2 kV JBS rectifiers fabricated in 4H-SiC

P. Godignon, N. Mestres, M. Vellvehí, 2006 .

Comparison between mesa isolation and p+ implantation isolation for 4H-SiC MESFET transistors

P. Godignon, M. Alexandru, M. Vellvehí, 2011, CAS 2011 Proceedings (2011 International Semiconductor Conference).

Novel techniques for reducing self-heating effects in silicon-on-insulator power devices

M. Vellvehí, J. Millán, D. Flores, 2001, 2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No.01TH8547).

Direct Visualization of Anti‐Ferroelectric Switching Dynamics via Electrocaloric Imaging

X. Jordà, M. Vellvehí, E. Defay, 2021, Advanced Electronic Materials.

Channeling implantations of Al+ into 6H silicon carbide

P. Godignon, A. Hallén, M. Vellvehí, 1999 .

Temperature effects on the ruggedness of SiC Schottky diodes under surge current

Philippe Godignon, Xavier Jordà, X. Perpiñà, 2014, Microelectron. Reliab..

Simulation-Based Analysis of Thermo-Mechanical Constraints in Packages for Diamond Power Devices

P. Godignon, X. Jordà, M. Vellvehí, 2020, 2020 21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).

Thermomechanical Assessment of Die-Attach Materials for Wide Bandgap Semiconductor Devices and Harsh Environment Applications

Philippe Godignon, Miquel Vellvehi, Josep Montserrat, 2014, IEEE Transactions on Power Electronics.

High temperature behaviour of 3.5 kV 4H-SiC JBS diodes

X. Jorda, M. Vellvehi, P. Godignon, 2007, Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.

DC temperature measurements for power gain monitoring in RF power amplifiers

Diego Mateo, Josep Altet, Xavier Jordà, 2012, 2012 IEEE International Test Conference.

Efficiency determination of RF linear power amplifiers by steady-state temperature monitoring using built-in sensors

José Luis González, Miquel Vellvehi, Diego Mateo, 2013 .

Wireless pad-free integrated circuit debugging by powering modulation and lock-in infrared sensing

X. Jordà, M. Vellvehí, A. Baldi, 2013 .

Irradiance-based emissivity correction in infrared thermography for electronic applications.

X. Jordà, M. Vellvehí, X. Perpiñà, 2011, The Review of scientific instruments.

A heterodyne method for the thermal observation of the electrical behavior of high-frequency integrated circuits

E. Aldrete-Vidrio, Miquel Vellvehi, Diego Mateo, 2008 .

Transmission Fabry–Pérot interference thermometry for thermal characterization of microelectronic devices

M. Vellvehi, J. Millan, Xavier Jordà, 2006 .

Analysis of Excess Carrier Concentration Control in Fast-Recovery High Power Bipolar Diodes at Low Current Densities

N. Mestres, J. Vobecký, X. Jordà, 2010 .

Electrical parameter variation of PT-IGBT by backside proton irradiation

X. Jorda, M. Vellvehi, P. Godignon, 2003, 2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No.03TH8676).

Analysis of SiC Schottky diodes after thermal vacuum test by means of lock-in infrared thermography

P. Godignon, X. Jordà, M. Vellvehí, 2020, 2020 21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).

Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta2Si/4H-SiC High-k MOSFETs Measured in Strong Inversion

N. Mestres, M. Vellvehí, J. Millán, 2006 .

Single-MOSFET DC thermal sensor for RF-amplifier central frequency extraction

Ferran Reverter, Javier León, Miquel Vellvehi, 2017 .

MOSFET dynamic thermal sensor for IC testing applications

Ferran Reverter, Javier León, Miquel Vellvehi, 2016 .

Spatially and frequency-resolved monitoring of intradie capacitive coupling by heterodyne excitation infrared lock-in thermography

X. Jordà, M. Vellvehí, J. Leon, 2013 .

Thermal phase lag heterodyne infrared imaging for current tracking in radio frequency integrated circuits

Ferran Reverter, Javier León, Miquel Vellvehi, 2017 .

Temperature sensors and measurements to test analogue circuits: questions and answers

F. Reverter, X. Perpina, M. Vellvehi, 2016, 2016 IEEE 21st International Mixed-Signal Testing Workshop (IMSTW).

Local non invasive study of SiC diodes with abnormal electrical behavior

X. Jordà, M. Vellvehí, J. Leon, 2015 .

Study of surface weak spots on SiC Schottky Diodes under specific operating regimes by Infrared Lock-in sensing

Philippe Godignon, Xavier Jordà, X. Perpiñà, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Physically based analysis of electrical frequency response of passive microelectronic circuits by heterodyne lock-in thermal means

X. Jordà, M. Vellvehí, J. Leon, 2013 .

Low-cost and versatile thermal test chip for power assemblies assessment and thermometric calibration purposes

M. Vellvehi, J. Millan, David Flores, 2011 .

Output Power and Gain Monitoring in RF CMOS Class A Power Amplifiers by Thermal Imaging

Ferran Reverter, Enrique Barajas, Josep Altet, 2019, IEEE Transactions on Instrumentation and Measurement.

High-power test device for package thermal assessment and validation of thermal measurement techniques

Miquel Vellvehi, Josep Altet, Xavier Jorda, 2010, 2010 16th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).

Steady-state sinusoidal thermal characterization at chip level by internal infrared-laser deflection

Miquel Vellvehi, Josep Altet, Xavier Jordà, 2008 .

Validation of Dynamic Thermal Simulations of Power Assemblies Using a Thermal Test Chip

P. Godignon, X. Jordà, M. Vellvehí, 2007, 2007 International Conference on Thermal, Mechanical and Multi-Physics Simulation Experiments in Microelectronics and Micro-Systems. EuroSime 2007.

Short-Circuit Study in Medium-Voltage GaN Cascodes, p-GaN HEMTs, and GaN MISHEMTs

Filip Bauwens, Marnix Tack, Xavier Jordà, 2017, IEEE Transactions on Industrial Electronics.

Thermal cycling analysis of high temperature die-attach materials

Xavier Jordà, L. A. Navarro, X. Perpiñà, 2012, Microelectron. Reliab..

SiC Integrated Circuit Control Electronics for High-Temperature Operation

Philippe Godignon, Dominique Tournier, Miquel Vellvehi, 2015, IEEE Transactions on Industrial Electronics.

SiC Schottky Diodes for Harsh Environment Space Applications

Philippe Godignon, Xavier Jordà, X. Perpiñà, 2011, IEEE Transactions on Industrial Electronics.

SiC power DIMOS with double implanted Al/B P-well

P. Godignon, X. Jordà, M. Vellvehí, 2001 .

Bipolar Conduction Impact on Electrical Characteristics and Reliability of 1.2- and 3.5-kV 4H-SiC JBS Diodes

Philippe Godignon, Miquel Vellvehi, Viorel Banu, 2008, IEEE Transactions on Electron Devices.

Carrier Concentration Analysis in 1.2 kV SiC Schottky Diodes Under Current Crowding

X. Jordà, M. Vellvehí, X. Perpiñà, 2022, IEEE Electron Device Letters.

Temperature Dependence of 4H-SiC JBS and Schottky Diodes after High Temperature Treatment of Contact Metal

P. Godignon, N. Mestres, X. Jordà, 2005 .

Long-Term Reliability of Railway Power Inverters Cooled by Heat-Pipe-Based Systems

Michel Mermet-Guyennet, J. Rebollo, Xavier Jordà, 2011, IEEE Transactions on Industrial Electronics.

Hot spot detection in integrated circuits laterally accessing to their substrate using a laser beam

X. Perpina, X. Jorda, M. Vellvehi, 2010, 2010 16th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).

An effective thermal conductivity measurement system

M. Vellvehi, J. Coleto, Jose Rebollo, 2004 .

Reliability and Lifetime Prediction for IGBT Modules in Railway Traction Chains

X. Jorda, M. Vellvehi, Michel Mermet-Guyennet, 2012 .

A New Vertical JFET Power Device for Harsh Radiation Environments

Miquel Vellvehi, P. Fernandez-Martinez, David Flores, 2017 .

Study of novel techniques for reducing self-heating effects in SOI power LDMOS

M. Vellvehi, Jaume Roig, Jose Rebollo, 2002 .

Reduction of self-heating effect on SOIM devices

J. Rebollo, Miquel Vellvehí, José Millán, 2002, Microelectron. Reliab..

The effect of the temperature on the Bipolar Degradation of 3.3 kV 4H-SiC PiN diodes

P. Godignon, J. Bergman, X. Jordà, 2008, 2008 20th International Symposium on Power Semiconductor Devices and IC's.

Solid-State Relay Solutions for Induction Cooking Applications Based on Advanced Power Semiconductor Devices

Sergio Llorente, Miquel Vellvehi, Xavier Jordà, 2019, IEEE Transactions on Industrial Electronics.

Design of logic gates for high temperature and harsh radiation environment made of 4H-SiC MESFET

M. Vellvehi, P. Godignon, J. Millan, 2010, CAS 2010 Proceedings (International Semiconductor Conference).