K. Im

发表

Electron beam lithography patterning of sub-10 nm line using hydrogen silsesquioxane for nanoscale device applications

W. Cho, Seongjae Lee, Jong-Heon Yang, 2005 .

Flexible transparent heaters with heating films made of indium tin oxide nanoparticles.

K. Im, Jonghyun Kim, Sangsig Kim, 2013, Journal of nanoscience and nanotechnology.

49.3: Oxide TFT Scan Driver with Dynamic Threshold Voltage Control

J. Jeong, K. Im, Sang Soo Kim, 2011 .

Ultrashallow Junction Formation Using Novel Plasma Doping Technology beyond 50 nm MOS Devices

H. Hwang, W. Cho, Seongjae Lee, 2005 .

Memory characteristics of MIS capacitors with parylene gate material

K. Im, Sangsig Kim, Kyoungah Cho, 2006, 2006 IEEE Nanotechnology Materials and Devices Conference.

Excellent electrical characteristics of lanthanide (Pr, Nd, Sm, Gd, and Dy) oxide and lanthanide-doped oxide for MOS gate dielectric applications

H. Hwang, K. Im, S. Jeon, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Electrical characteristics of an ultrathin (1.6 nm) TaOxNy gate dielectric

H. Hwang, K. Im, Hyung-Suk Jung, 2000 .

Recessed source-drain (S/D) SOI MOSFETs with low S/D extension (SDE) external resistance

W. Cho, I. Baek, C. Ahn, 2004, 2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573).

Electrical characteristics of gold nanoparticle-embedded MIS capacitors with parylene gate dielectric

K. Im, Sangsig Kim, Kyoungah Cho, 2008 .

Fabrication of 50-nm gate SOI n-MOSFETs using novel plasma-doping technique

Won-Ju Cho, Jong-Heon Yang, Kiju Im, 2004 .

Electrical Characteristics of TaO x N y /ZrSi x O y Stack Gate Dielectric for MOS Device Applications

H. Hwang, K. Im, Hyung-Suk Jung, 2001 .

Elevated temperature plasma doping technology for sub-50 nm SOI n-MOSFETs

W. Cho, Seongjae Lee, Jong-Heon Yang, 2004, The Fourth International Workshop on Junction Technology, 2004. IWJT '04..

Fabrication of 50 nm Trigate Silicon On Insulator Metal–Oxide–Silicon Field-Effect Transistor without Source/Drain Activation Annealing

H. Hwang, W. Cho, Seongjae Lee, 2004 .

Fabrication of n-type Schottky barrier thin-film transistor with channel length and width of 0.1 μm and erbium silicide source/drain

M. Jang, Seongjae Lee, Jong-Heon Yang, 2009 .

Conduction band offset-dependent induced threshold voltage shifts in a-InGaZnO TFTs under positive bias illumination stress

K. Im, P. Choi, Hyojung Kim, 2021 .

The Effects of Valence Band Offset on Threshold Voltage Shift in a-InGaZnO TFTs Under Negative Bias Illumination Stress

Jongwoo Park, K. Im, P. Choi, 2020, IEEE Electron Device Letters.

Transparent heaters based on solution-processed indium tin oxide nanoparticles

Jonghyun Kim, Sangsig Kim, Kyoungah Cho, 2010 .

Electrical and reliability characteristics of an ultrathin TaO x N y gate dielectric prepared by ND 3 annealing of Ta 2 O 5

H. Hwang, K. Im, Dooyoung Yang, 2000 .

A Study of Parasitic Series Resistance Components in In–Ga–Zn–Oxide (a-IGZO) Thin-Film Transistors

Kiju Im, Sang Soo Kim, K. Im, 2011, IEEE Electron Device Letters.

Plasma doping technology for fabrication of nanoscale metal-oxide-semiconductor devices

W. Cho, Seongjae Lee, Jong-Heon Yang, 2004 .

P‐3: Effects of Negative Bias Illumination Stress on IGZO Device and Luminance Behaviors in OLED Display Panel Operated by AC Conditions

Jongwoo Park, K. Im, Hyojung Kim, 2020 .