J. Coburn

发表

The etching of silicon with XeF2 vapor

H. F. Winters, J. Coburn, 1979 .

Ion- and electron-assisted gas-surface chemistry—An important effect in plasma etching

H. F. Winters, J. Coburn, 1979 .

Effect of ion bombardment on the plasma‐assisted etching and deposition of plasma perfluoropolymer thin films

J. Coburn, E. Occhiello, F. Fracassi, 1987 .

Plasma etching A ’’pseudo‐black‐box’’ approach

H. F. Winters, J. Coburn, E. Kay, 1977 .

Surface-science aspects of plasma-assisted etching

J. Coburn, 1994 .

Conductance considerations in the reactive ion etching of high aspect ratio features

H. F. Winters, J. Coburn, Harold F. Winters, 1989 .

Influence of the altered layer on depth profiling measurements

H. F. Winters, J. Coburn, 1976 .

The influence of ion sputtering on the elemental analysis of solid surfaces

J. Coburn, 1979 .

Plasma potentials of 13.56-MHz rf argon glow discharges in a planar system

J. Coburn, D. Horne, E. Kay, 1985 .

Sputter Deposition of EuO Thin Films

J. Coburn, Kenneth K. C. Lee, 1971 .

PLASMA DIAGNOSTICS OF AN rf-SPUTTERING GLOW DISCHARGE.

J. Coburn, E. Kay, 1971 .

A Study of the Neutral Species rf Sputtered from Oxide Targets

J. Coburn, E. Kay, E. Taglauer, 1974 .

Mass spectrometric studies of positive ions in r.f. glow discharges

J. Coburn, 1989 .

On the effect of low-energy ion bombardment on polystyrene and polymethylmethacrylate etch rates in rf plasmas

J. Coburn, E. Occhiello, F. Garbassi, 1989 .

Mass Spectrometric Studies of Ions Produced in Halofluorocarbon Plasma Etching of Silicon and Silicon Dioxide

J. Coburn, E. Occhiello, F. Garbassi, 1988 .

Plasma-assisted etching of tungsten films: A quartz-crystal microbalance study

J. Coburn, F. Fracassi, 1988 .

Quartz crystal microbalance simulation of the directionality of Si etching in CF4 glow discharges

J. Coburn, R. W. Sadowski, Natasha C.Us, 1986 .

Quartz Crystal Microbalance Studies of the Plasma-Assisted Etching of Polyimide and Tungsten Thin Films

J. Coburn, F. Fracassi, 1986 .

Dependence of F atom density on pressure and flow rate in CF4 glow discharges as determined by emission spectroscopy

J. Coburn, M. Chen, 1981 .

Plasma‐assisted etching mechanisms: The implications of reaction probability and halogen coverage

H. F. Winters, J. Coburn, 1985 .

Recombination coefficients of O and N radicals on stainless steel

J. Coburn, D. Graves, Harmeet Singh, 2000 .

Abstract: Mechanisms in plasma etching

H. F. Winters, J. Coburn, 1978 .

Fundamental beam studies of deuterium and fluorine radical reaction kinetics on surfaces

J. Coburn, D. Graves, F. Greer, 2003 .

Heteronuclear and homonuclear surface abstraction reactions of Cl, Br, and F

J. Coburn, D. Graves, G. Kota, 1999 .

Heterogeneous recombination of atomic bromine and fluorine

J. Coburn, D. Graves, G. Kota, 1999 .

An XPS and Auger investigation of CF+3 ion bombardment of silicon

H. F. Winters, J. Coburn, T. Chuang, 1979 .

Vacuum beam studies of fluorocarbon radicals and argon ions on Si and SiO2 surfacesa)

J. Coburn, D. Graves, Yoshie Kimura, 2004 .

Plasma chemistry of fluorocarbons as related to plasma etching and plasma polymerization

J. Coburn, E. Kay, A. Dilks, 1980 .

Reactive Gas Glow Discharges

J. Coburn, 1991 .

Measurements of neutral and ion composition, neutral temperature, and electron energy distribution function in a CF4 inductively coupled plasma

J. Coburn, D. Graves, Harmeet Singh, 2001 .

Plasma potentials in supported discharges and their influence on the purity of sputter‐deposited films

P. Ziemann, J. Coburn, E. Kay, 1983 .

Techniques for elemental composition profiling in thin films

J. Coburn, E. Kay, 1973 .

Etching Reactions at Solid Surfaces

H. F. Winters, J. Coburn, 1984 .

Plasma Sources in Analytical Mass Spectrometry

J. Coburn, W. Harrison, 1981 .

The recombination of chlorine atoms at surfaces

David B. Graves, Gowri P. Kota, J. Coburn, 1998 .

Etching of ruthenium coatings in O2- and Cl2-containing plasmas

J. Coburn, D. Graves, C. Hsu, 2006 .

Optical emission spectroscopy of reactive plasmas: A method for correlating emission intensities to reactive particle density

J. Coburn, J. W. Coburn, M. Chen, 1980 .

The dissociative electronic desorption of carbon monoxide from tungsten

J. Coburn, 1968 .

Sputtering in the surface analysis of solids: A discussion of some problems

J. Coburn, 1976 .

A New Technique for the Elemental Analysis of Thin Surface Layers of Solids

J. Coburn, E. Kay, 1971 .

Plasma etching—A discussion of mechanisms

H. F. Winters, J. Coburn, Harold F. Winters, 1979 .

Ion‐surface interactions in plasma etching

H. F. Winters, J. Coburn, T. Chuang, 1977 .

Pressure Considerations Associated with Ion Sampling from Glow Discharges

J. Coburn, E. Kay, 1971 .

Plasma–surface interactions

Jane P. Chang, J. Coburn, 2003 .

Positive‐ion bombardment of substrates in rf diode glow discharge sputtering

J. Coburn, E. Kay, 1972 .

Appearance potential mass spectrometry: Discrimination of dissociative ionization products

J. Coburn, D. Graves, Harmeet Singh, 2000 .

Argon and oxygen ion chemistry effects in photoresist etching

J. Coburn, D. Graves, F. Greer, 2002 .

F2 adsorption on Si observed with SIMS and QCM

J. Coburn, E. Kay, E. Knabbe, 1982 .

Ion‐assisted etching of Si with Cl2: The effect of flux ratio

J. Coburn, 1994 .

C4F8 dissociation in an inductively coupled plasma

J. Coburn, D. Graves, M. Radtke, 2003 .

Surface Science Aspects of Etching Reactions

H. F. Winters, J. Coburn, Harold F. Winters, 1992 .

Mass spectrometric detection of reactive neutral species: Beam-to-background ratio

J. Coburn, D. Graves, Harmeet Singh, 1999 .

Plasma-assisted etching

J. Coburn, J. W. Coburn, 1982 .

A System for Determining the Mass and Energy of Particles Incident on a Substrate in a Planar Diode Sputtering System

J. Coburn, 1970 .

Glow‐discharge mass spectrometry—Technique for determining elemental composition profiles in solids

J. Coburn, E. Kay, E. Taglauer, 1974 .

Diagnostics of an r.f. sputtering glow discharge - correlation between atomic absorption and mass spectrometry

J. Coburn, E. Kay, E. Eckstein, 1975 .

Some chemical aspects of the fluorocarbon plasma etching of silicon and its compounds

J. Coburn, E. Kay, 1979 .

In situ Auger electron spectroscopy of Si and SiO2 surfaces plasma etched in CF4‐H2 glow discharges

J. Coburn, 1979 .

H atom reactions with GaAs 〈001〉

J. Coburn, M. Chuang, 1990 .

Surface processing with partially ionized plasmas

J. Coburn, J. W. Coburn, 1991 .

Electron‐beam effects in depth profiling measurements with Auger electron spectroscopy

H. F. Winters, J. Coburn, J. Ahn, 1975 .

Elemental Composition Profiling in Thin Films by Glowdischarge Mass Spectrometry: Depth Resolution

J. Coburn, E. Kay, E. Eckstein, 1975 .

Surface processes in plasma-assisted etching environments

H. F. Winters, J. Coburn, T. Chuang, 1983 .

Ion‐induced volatilization (IIV): A method for quantitative measurement of the amounts of perfluoropolyether lubricant on a particulate disk surface and in the media porosity

H. F. Winters, J. Coburn, Harold F. Winters, 1986 .

Ion-enhanced gas-surface chemistry: The influence of the mass of the incident ion

J. Coburn, E. Kay, U. Gerlach-Meyer, 1981 .

Frequency dependence of ion bombardment of grounded surfaces in rf argon glow discharges in a planar system

J. Coburn, D. Horne, J. W. Coburn, 1985 .

The role of energetic ion bombardment in silicon-fluorine chemistry

H. F. Winters, J. Coburn, J. W. Coburn, 1987 .

Plasma-Assisted Etching in Microfabrication

H. F. Winters, J. Coburn, Harold F. Winters, 1983 .

The Role of Ions in Reactive Ion Etching with Low Density Plasmas

J. Coburn, 1997 .

Ion-beam-assisted etching of Si with fluorine at low temperatures

J. Coburn, C. Mullins, 1994 .

Mechanisms in Plasma-assisted Etching

J. Coburn, 1988 .

Plasma etching - a discussion of mechanisms

H. F. Winters, J. Coburn, 1981 .

Summary Abstract: Diagnostics in plasma processing

J. Coburn, J. W. Coburn, 1986 .

Role of ions in reactive ion etching

J. Coburn, 1994 .

Atomic and Molecular Beam Studies of Etching and Related Surface Chemistries

J. Coburn, 1992 .

1 – Quartz Crystal Microbalances for Studies of Plasma-Surface Interactions

J. Coburn, 1989 .

Molecular‐beam study of gas‐surface chemistry in the ion‐assisted etching of silicon with atomic and molecular hydrogen and chlorine

J. Coburn, M. Chuang, 1990 .

Fundamental beam studies of radical enhanced atomic layer deposition of TiN

J. Coburn, D. Graves, F. Greer, 2003 .

Some Fundamental Aspects of Plasma-Assisted Etching

J. Coburn, 2000 .

Summary Abstract: Plasma potentials of 13.56 MHz rf argon glow discharges in a planar system

J. Coburn, D. Horne, E. Kay, 1985 .

Vacuum beam studies of photoresist etching kinetics

J. Coburn, D. Graves, F. Greer, 2000 .

The formation of complexes of the type X2+⋅R in rf rare gas glow discharges

J. Coburn, E. Kay, 1976 .

A mass spectrometric study of neutral−sputtered species in an rf glow discharge sputtering system

W. Eckstein, J. Coburn, E. Kay, 1975 .

Role of oxygen in ion-enhanced etching of poly-Si and WSix with chlorine

J. Coburn, D. Graves, G. Kota, 1998 .

Deuterium and fluorine radical reaction kinetics on photoresist

J. Coburn, D. Graves, F. Greer, 2002 .

Fluorine atom subsurface diffusion and reaction in photoresist

D. Fraser, David B. Graves, Frank Greer, 2003 .