J. Perrin

发表

Numerical modeling of the optical properties of hydrogenated amorphous‐silicon‐based p‐i‐n solar cells deposited on rough transparent conducting oxide substrates

F. Leblanc, J. Perrin, J. Schmitt, 1994 .

Retarding‐field analyzer for measurements of ion energy distributions and secondary electron emission coefficients in low‐pressure radio frequency discharges

J. Perrin, C. Böhm, 1993 .

Growth of nodular defects during film deposition

J. Perrin, J. Schmitt, A. Rhallabi, 1995 .

Optical and compositional study of silicon oxide thin films deposited in a dual-mode (microwave/radiofrequency) plasma-enhanced chemical vapor deposition reactor

J. Perrin, D. Ballutaud, R. Etemadi, 1998 .

High resolution absorption and emission spectroscopy of a silane plasma in the 1800–2300 cm−1 range

J. Perrin, J. Schmitt, J. Knights, 1982 .

Surface reaction and recombination of the SiH3 radical on hydrogenated amorphous silicon

J. Perrin, Ton Broekhuizen, 1987 .

Emission cross sections from fragments produced by electron impact on silane

J. Perrin, S. Schmitt, 1982 .

Thermal accommodation of a gas on a surface and heat transfer in CVD and PECVD experiments

J. Perrin, O. Leroy, M. Péalat, 1997 .

Mass Spectrometry of Reactive Plasmas

J. Perrin, 1997 .

Electronic Properties and Device Applications of Hot-Wire CVD Polycrystalline Silicon Films

R. Brenot, J. Perrin, J. Kleider, 1997 .

Photoconductive polycrystalline silicon films on glass obtained by hot-wire CVD

J. Perrin, J. Bourée, J. Guillet, 1996 .

Electrostatic probe measurement of the negative ion fraction in an SF6 helicon discharge

R. Boswell, J. Perrin, P. Chabert, 1999 .

Modelling of the power dissipation and rovibrational heating and cooling in SiH4-H2 RF glow discharges

J. Perrin, 1993 .

Modelling of silicon nitride deposition by 254 nm Hg-photosensitization and 185 nm photolysis of SiH4/NH3 gas mixture

J. Perrin, B. Allain, J. Guizot, 1989 .

Sticking and recombination of the SiH3 radical on hydrogenated amorphous silicon: The catalytic effect of diborane

J. Perrin, Y. Takeda, A. Matsuda, 1989 .

Temperature dependence of the sticking and loss probabilities of silyl radicals on hydrogenated amorphous silicon

J. Perrin, A. Matsuda, Y. Takeuchi, 1990 .

Cross-linking and average coordination in plasma-polymerized hydro- and fluorocarbons

J. Perrin, R. Dandoloff, 1986 .

Alloying effects on the electronic structure of a-Si1−xNx:H films prepared by a mercury-photosensitized decomposition method

J. Perrin, A. Gheorghiu, C. Sénémaud, 1989 .

Fast Deposition of Polycrystalline Silicon Films by Hot-Wire CVD

J. Perrin, A. Middya, A. Lloret, 1995 .

Scanning x‐ray radiography: First tests in an electron spectrometer

J. Perrin, J. Cazaux, D. Mouze, 1982 .

Simultaneous bulk and surface microanalyis by electron spectroscopy

J. Perrin, J. Cazaux, D. Mouze, 1981 .

Optical properties and hydrogen concentration in amorphous silicon

J. Perrin, I. Solomon, E. Ligeon, 1979 .

Hydrogen incorporation in dual-mode PECVD amorphous silicon oxide thin films

J. Perrin, C. Clerc, B. Drévillon, 1996 .

Plasma and surface reactions during a-Si:H film growth

J. Perrin, 1991 .

Effect of Ion Bombardment on the Growth and Properties of Hydrogenated Amorphous Silicon-Germanium Alloys

J. Perrin, Y. Takeda, A. Matsuda, 1989 .

a-Si:H Deposition from SiH4 and Si2H6 rf-Discharges: Pressure and Temperature Dependence of Film Growth in Relation to α-γ Discharge Transition

J. Perrin, P. Cabarrocas, J. Friedt, 1988 .

Growth of hydrogenated amorphous silicon due to controlled ion bombardment from a pure silane plasma

J. Perrin, B. Drévillon, J. Schmitt, 1983 .

High-speed homoepitaxy of SiC from methyltrichlorosilane by chemical vapor deposition

J. Perrin, P. Klein, J. Chaudhuri, 2005 .

Mass spectrometric study of NF3 plasma etching of silicon

J. Meot, J. Perrin, J. Schmitt, 1990 .

Electronic Excitations (3 to 35 eV Range) in Some Layered III–VI Compounds: GaS, GaSe, and InSe

J. Perrin, P. Soukiassian, J. Cazaux, 1974 .

Dissociative excitation of SiH4, SiD4, Si2H6 and GeH4 by 0–100 eV electron impact

J. Perrin, J. Aarts, 1983 .

Possible routes for cluster growth and particle formation in RF silane discharges

J. Perrin, R. Etemadi, A. Lloret, 1994 .

SiO2 deposition by direct photolysis at 185 nm of N2O and SiH4

J. Perrin, M. Petitjean, N. Proust, 1990 .

Mass spectrometry detection of radicals in SiH4-CH4-H2 glow discharge plasmas

J. Perrin, J. Jolly, J. Guillon, 1995 .

Spatially resolved optical emission and electrical properties of SiH4 RF discharges at 13.56 MHz in a symmetric parallel-plate configuration

J. Perrin, C. Bohm, 1991 .

Improvement of the SiO2 deposition by 185 nm photolysis of N2O and SiH4 by addition of neopentane

J. Perrin, M. Petitjean, N. Proust, 1992 .

DEPOSITION CONDITIONS RELATED TO THE CHEMICAL AND OPTICAL PROPERTIES OF HYDROGENATED AMORPHOUS SILICON THIN FILMS

J. Perrin, B. Drévillon, M. Toulemonde, 1983 .

Optical absorption, light trapping and power dissipation in a-Si:H solar cells analyzed by photothermal deflection spectroscopy

F. Leblanc, J. Perrin, Elizabeth. Cornil, 1991 .

Cross-Sections, Rate Constants and Transport Coefficients in Silane Plasma Chemistry

O. Leroy, J. Perrin, M. Bordage, 1996 .

Translational energy distribution of excited hydrogen atoms produced by 0–100 eV electron impact dissociation of SiH4 and GeH4

J. Perrin, J. Schmitt, 1984 .

Dissociation cross sections of silane and disilane by electron impact

J. Perrin, B. Drévillon, J. Schmitt, 1982 .

Production mechanism and reactivity of the SiH radical in a silane plasma

J. Perrin, J. Schmitt, M. Krishnan, 1984 .

DEPOSITION OF AMORPHOUS SILICON

J. Perrin, 1997 .

4 – Reactor Design for a-Si: H Deposition

J. Perrin, Jérôme Perrin, 1995 .

Positive and negative ions in silane and disilane multipole discharges

J. Perrin, J. Schmitt, G. Rosny, 1984 .

Surface reaction probabilities and kinetics of H, SiH3, Si2H5, CH3, and C2H5 during deposition of a-Si:H and a-C:H from H2, SiH4, and CH4 discharges

Jean Guillon, Masaharu Shiratani, J. Perrin, 1998 .

Surface Reaction Kinetics of CH 3 in CH 4 RF Discharge Studied by Time-Resolved Threshold Ionization Mass Spectrometry

J. Perrin, M. Shiratani, J. Jolly, 1997 .

Self-consistent modelling of a microwave discharge in neon and argon at atmospheric pressure

J. Perrin, S. Shabunya, J. Rostaing, 2007 .

Spatiotemporal analysis of the double layer formation in hydrogen radio frequency discharges

J. Perrin, P. Belenguer, J. Jolly, 1995 .

Ion‐induced secondary electron emission in SiH4 glow discharge, and temperature dependence of hydrogenated amorphous silicon deposition rate

J. Perrin, P. Cabarrocas, C. Böhm, 1993 .

Phenomenology of a dual-mode microwave/RF discharge used for the deposition of silicon oxide thin layers

J. Perrin, R. Etemadi, C. Godet, 1997 .

Reactive ion etching of silicon carbide in SF6 gas: Detection of CF, CF2, and SiF2 etch products

J. Perrin, J. Booth, P. Chabert, 2001 .

Silane dissociation mechanisms and thin film formation in a low pressure multipole dc discharge

J. Perrin, B. Drévillon, J. Schmitt, 1980 .

Dual-plasma reactor for low temperature deposition of wide band-gap silicon alloys

J. Perrin, B. Drévillon, R. Etemadi, 1997 .

Modeling and diagnostics of silicon nitride deposition from 254‐nm Hg photosensitization of SiH4‐NH3 mixtures: Luminescence of HgNH3 excimer and laser‐induced fluorescence of NH2(Ã 2A1)

T. Fuyuki, J. Perrin, B. Allain, 1990 .

Quenching of excited mercury atoms (6 3P1 and 6 3P0) in collisions with SiH4, SiD4, Si2H6 and GeH4

J. Perrin, B. Allain, 1988 .

Ion drag and plasma-induced thermophoresis on particles in radiofrequency glow discharges

J. Perrin, P. Belenguer, P. Molinàs-Mata, 1994 .

Surface recombination probabilities of H on stainless steel, a-Si:H and oxidized silicon determined by threshold ionization mass spectrometry in H2 RF discharges

J. Perrin, J. Jolly, J. Guillon, 1996 .

Mass Spectrometry Detection of SiHm and CHm Radicals from SiH4–CH4–H2 RF Discharges under High Temperature Deposition Conditions of Silicon Carbide

J. Perrin, P. Kae-Nune, Jean Guillon Jean Guillon, 1994 .

In situ infrared ellipsometry study of the hydrogen incorporation in p-doped amorphous silicon and p-i interfaces

J. Perrin, B. Drévillon, R. Ossikovski, 1993 .

Kinetics of deposition and electrical properties of silicon nitride films obtained by 185 nm photolysis of SiH4-NH3 mixtures

J. Perrin, P. Alnot, F. Wyczisk, 1991 .

Two-dimensional modelling of - radio-frequency discharges for a-Si:H deposition

J. Perrin, L. Alves, J. Jolly, 1998 .

Surface reactions of radicals during deposition of amorphous semiconductors by photochemical decomposition of molecular hydrides

J. Perrin, B. Allain, 1987 .

Deposition of amorphous silicon alloys

J. Perrin, 1990 .

The physics of plasma-enhanced chemical vapour deposition for large-area coating: industrial application to flat panel displays and solar cells

J. Perrin, J. Schmitt, A. Howling, 2000 .

Numerical Model to Predict Unsteady Cavitating Flow Behavior in Inducer Blade Cascades

Jean-Luc Reboud, Olivier Coutier-Delghosa, Olivier Coutier-Delghosa, 2002, 2001.10345.

Optical Constants and Electronic Structure of Crystalline and Amorphous As2S3 in the 3 to 35 eV Range

J. Perrin, P. Soukiassian, J. Cazaux, 1974, April 1.

High rate etching of 4H-SiC using a SF6/O2 helicon plasma

Roderick Boswell, Pascal Chabert, R. Boswell, 2000 .

Application of pyrosol deposition process for large-area deposition of fluorine-doped tin dioxide thin films

F. Leblanc, J. Perrin, J. Dutta, 1994 .

Pyrosol deposition of fluorine-doped tin dioxide thin films

J. Perrin, T. Emeraud, J. Laurent, 1995 .

Thermal oxidation of polycrystalline and single crystalline aluminum nitride wafers

J. Perrin, D. Blom, S. Speakman, 2005 .

Emission spectroscopy of SiH in a silane glow-discharge

J. Perrin, E. Delafosse, J Perrin, 1980 .

Modelling of Hg( 3 P 1 ) Photosensitization of SiH 4 and Surface Reactions of the SiH 3 Radical

J. Perrin, Ton Biroekhuizen, 1986 .

The grain size in microcrystalline silicon: correlation between atomic force microscopy, UV reflectometry, ellipsometry, and X-ray diffractometry

J. Perrin, J. Bourée, J. Dixmier, 1996 .

Conductivity and temperature dependence of the optical gap in hydrogenated amorphous silicon

J. Perrin, I. Solomon, 1980 .

Optimization of the InP/SiO2 interface treatment by (NH4)2Sx for the InP MISFET fabrication technology

J. Perrin, M. Petitjean, N. Proust, 1992 .

Silicon oxide deposited by direct photolysis of N2O and SiH4 at 185 nm on sulfur-treated InP: application to InP MISFETs

J. Perrin, M. Petitjean, N. Proust, 1993 .

InP/insulator interface properties: a comparison between UVCVD, DECR PECVD and 13.56 MHz PECVD

J. Perrin, B. Agius, M. Petitjean, 1991, [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials.

Silicon nitride deposited by direct photolysis of NH/sub 3/ and SiH/sub 4/ at 185 nm and its application to InP MISFETs

J. Perrin, M. Petitjean, N. Proust, 1991, [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials.

UV-CVD deposited SiNH films on InP: Optimization of the physico-chemical and interface properties

J. Perrin, M. Petitjean, N. Proust, 1992 .

Simulation of Perfluoromethane Decomposition in an Atmospheric-Pressure Microwave Discharge

J. Perrin, J. Rostaing, S. Zhdanok, 2005 .

Interband Transitions in Some Layered Chalcogenide Semiconductors

J. Perrin, P. Soukiassian, J. Cazaux, 1974 .