Binqiang Shi

A low-power 72.8-GHz static frequency divider in AlInAs/InGaAs HBT technology

Y. K. Boegeman, Marko Sokolich, Charles H. Fields, 2001 .

InP-HBT optoelectronic integrated circuits for photonic analog-to-digital conversion

R. H. Walden, Charles H. Fields, Binqiang Shi, 2001 .

A low power 72.8 GHz static frequency divider implemented in AlInAs/InGaAs HBT IC technology

A. R. Kramer, Charles H. Fields, Binqiang Shi, 2000, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd Annual Technical Digest 2000. (Cat. No.00CH37084).

200 GHz InP DHBT technology using selectively implanted buried sub-collector (SIBS) for broadband amplifiers

Marko Sokolich, Binqiang Shi, Rajesh D. Rajavel, 2007 .

Effects of device design on InP-based HBT thermal resistance

Binqiang Shi, M. Madhav, Rajesh D. Rajavel, 2001 .