H. Fukutome
发表
H. Fukutome,
K. Cheon,
J. P. Kim,
2012,
2012 International Electron Devices Meeting.
T. Sugii,
T. Aoyama,
H. Morioka,
2006,
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..
S. Satoh,
H. Minakata,
Y. Momiyama,
2009,
2009 IEEE International Electron Devices Meeting (IEDM).
T. Itakura,
T. Aoyama,
Y. Momiyama,
2005,
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
Hidenobu Fukutome,
H. Fukutome,
2010
.
H. Fukutome,
H. Arimoto,
S. Hasegawa,
2004
.
H. Ohta,
M. Hori,
H. Fukutome,
2002,
Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT..
T. Aoyama,
H. Fukutome,
H. Arimoto,
2001,
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
T. Aoyama,
H. Fukutome,
H. Arimoto,
1999,
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference.
T. Aoyama,
H. Fukutome,
H. Arimoto,
1999
.
T. Aoyama,
H. Fukutome,
H. Arimoto,
1998
.
H. Fukutome,
K. Maehashi,
S. Hasegawa,
1998
.
H. Fukutome,
H. Arimoto,
S. Hasegawa,
2001,
Device Research Conference. Conference Digest (Cat. No.01TH8561).
Y. Momiyama,
T. Aoyama,
Y. Tagawa,
2006,
IEEE Transactions on Electron Devices.
Y. Momiyama,
T. Aoyama,
Y. Tagawa,
2004,
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
Direct measurement of effects of shallow-trench isolation on carrier profiles in sub-50 nm N-MOSFETs
T. Aoyama,
Y. Nara,
Y. Tagawa,
2005,
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..
H. Fukutome,
H. Arimoto,
S. Hasegawa,
2002
.
Fluorine implantation impact in extension region on the electrical performance of sub-50nm P-MOSFETs
H. Nakao,
Y. Momiyama,
T. Aoyama,
2003,
IEEE International Electron Devices Meeting 2003.
Y. Momiyama,
H. Fukutome,
2009,
2009 International Workshop on Junction Technology.
S. Satoh,
T. Sugii,
H. Ohta,
2007,
2007 IEEE International Electron Devices Meeting.
Y. S. Nam,
J. H. Lee,
K. H. Lee,
2016,
2016 IEEE Symposium on VLSI Technology.